BFS17L BFS17H SOT23 NPN SILICON PLANAR RF TRANSISTORS ISSUE 4 – MARCH 2001 PARTMARKING DETAILS — E C BFS17L - E1L BFS17H - E1H B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 25 V Collector-Emitter Voltage V CEO 15 V Emitter-Base Voltage V EBO 2.5 V mA Peak Pulse Current I CM 50 Continuous Collector Current IC 25 mA Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage Temperature Range T j:T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL Collector Cut-Off Current I CBO Static Forward Current Transfer Ratio h FE MIN. TYP. MAX. UNIT CONDITIONS. 10 10 nA µA V CB=10V, I E=0 V CB=10V, I E=0, T amb = 100°C BFS17L 25 100 I C=2.0mA, V CE=1.0V BFS17H 70 200 I C=2.0mA, V CE=1.0V 20 Transition Frequency fT I C=25mA, V CE=1.0V 125 1.0 GHz I C=2.0mA, V CE=5.0V f=500MHz I C=25mA, V CE=5.0V f=500MHz 1.3 GHz 0.85 pF IC=2.0mA, VCE=5V, f=1MHz Feedback Capacitance -C re Output Capacitance C obo 1.5 pF VCB=10V, f=1MHz Input Capacitance C ibo 2.0 pF VEB=0.5V, f=1MHz Noise Figure N 4.5 dB I C=2.0mA, V CE=5.0V R S=50 Ω , f=500MHz Intermodulation Distortion d im -45 dB I C=10mA, V CE=6.0V R L =37.5 Ω ,T amb=25°C Vo=100mV at fp=183MHz Vo=100mV at fq=200MHz measured at f(2q-p) =217MHz Spice parameter data is available upon request for this device TBA BFS17L BFS17H TYPICAL CHARACTERISTICS 80 hFE - Normalised Gain f T - (GHz) 3 f=400MHz 2 VCE=10V VCE=5V 1 0 0.1 1 100 10 1000 IC - Collector Current (mA) CRE - (pF) 20 1µ 10µ 100µ hFE v IC f=1MHz 1.5 1.0 0.5 0 10 40 20 VCE - (V) CRE v VCE 1m IC - Collector Current (A) fT v IC 2.0 VCE=10V 60 30 10m 100m