SCH2310 Ordering number : ENA1235 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SCH2310 General-Purpose Switching Device Applications Features • • 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings Unit VDSS VGSS --60 ±10 V V ID --100 mA mA Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --400 Allowable Power Dissipation PD When mounted on ceramic substrate (900mm 2✕0.8mm) 1unit 0.65 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS Conditions ID=--1mA, VGS=0V Ratings min typ Unit max --60 V VDS=--60V, VGS=0V --1 μA ±10 μA IGSS VGS(off) VGS=±8V, VDS=0V VDS=--10V, ID=--100μA --0.4 Forward Transfer Admittance ⏐yfs⏐ RDS(on)1 VDS=--10V, ID=--50mA 130 ID=--50mA, VGS=--4V 6.5 8.5 Ω Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 ID=--30mA, VGS=--2.5V 7.4 11 Ω ID=--10mA, VGS=--1.5V 10 20 Ω Cutoff Voltage Marking : MK --1.4 220 V mS Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 61108PE TI IM TC-00001410 No. A1235-1/4 SCH2310 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time td(off) tf Fall Time min typ Unit max VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz 15 pF 3.5 pF 1.0 pF See specified Test Circuit. 75 ns See specified Test Circuit. 116 ns See specified Test Circuit. 665 ns See specified Test Circuit. 270 ns 0.58 nC 0.14 nC Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--30V, VGS=--4V, ID=--100mA VDS=--30V, VGS=--4V, ID=--100mA VDS=--30V, VGS=--4V, ID=--100mA Diode Forward Voltage VSD IS=--100mA, VGS=0V Package Dimensions Ratings Conditions 0.03 --0.91 nC --1.5 V Electrical Connection unit : mm (typ) 7028-006 6 5 4 1 2 3 1.6 0.2 1.5 1 2 3 0.5 0.25 0.56 0.05 1.6 0.05 0.2 6 5 4 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 Top view 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : SCH6 Switching Time Test Circuit VDD= --30V VIN 0V --4V ID= --50mA RL=600Ω VOUT VIN D PW=10μs D.C.≤1% G P.G Rg SCH2310 50Ω S Rg=5kΩ No. A1235-2/4 SCH2310 ID -- VDS .5 --2 --50 --40 --30 --100 --50 --20 --10 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 20 --30mA 15 --50mA 10 ID= --10mA 0 --2 --4 --6 --8 10 5 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C ⏐yfs⏐ -- ID 160 IT11255 IS -- VSD --100 7 5 VDS= --10V 140 VGS=0V 3 2 C 5° = Ta 100 --2 7 °C 75 25 °C 5 3 2 2 --10 7 5 3 2 --1.0 7 5 25°C 3 --25°C 5 --2.5 IT11253 0mA = --1 I D , .5V = --1 A VGS --30m , I D= V 5 . = --2 VGS 0mA = --5 V, I D 0 . 4 =V GS IT11254 Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- mS 7 --2.0 15 0 --60 --10 Gate-to-Source Voltage, VGS -- V --1.5 RDS(on) -- Ta 20 25 0 --1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C 5 --0.5 IT11252 RDS(on) -- VGS 30 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 0 --1.0 Ta=7 5°C 0 3 2 10 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 Drain Current, ID -- mA 3 5 5 tf 3 2 tr 100 7 3 5 7 --0.01 --1.0 --1.2 IT11257 f=1MHz 2 Ciss 10 7 5 Coss 3 2 Crss 1.0 7 td(on) 2 --0.8 Ciss, Coss, Crss -- VDS 3 Ciss, Coss, Crss -- pF td(off) 7 --0.6 Diode Forward Voltage, VSD -- V VDD= --30V VGS= --4V 1000 --0.4 IT11256 2 5 --0.001 --0.1 --0.2 SW Time -- ID 3 Switching Time, SW Time -- ns --25 °C V --1.5 V GS= Ta= 75° 25°C C --60 Drain Current, ID -- mA 5V --4 . --70 --8 .0V --4 .0 V Drain Current, ID -- mA --80 VDS= --10V V V --6 . --90 ID -- VGS --150 --3 .0 0V --100 5 2 Drain Current, ID -- A 3 5 7 --0.1 IT11258 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT11259 No. A1235-3/4 SCH2310 7 5 VDS= --30V ID= --100mA --3.5 2 --3.0 --2.5 --2.0 --1.5 --1.0 --0.1 7 5 0.1 0.2 0.3 0.4 0.5 Total Gate Charge, Qg -- nC 0.6 IT11260 PD -- Ta 0.7 DC ID= --100mA op er 10 ati on 0m s (T a= 25 2 °C ) Operation in this area is limited by RDS(on). 7 5 2 0 PW≤10μs 1m 10 s m s 3 3 --0.5 0 Allowable Power Dissipation, PD -- W IDP= --400mA 3 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V ASO VGS -- Qg --4.0 Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) 1unit --0.001 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 --100 IT13773 When mounted on ceramic substrate (900mm2✕0.8mm) 1unit 0.65 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13774 Note on usage : Since the SCH2310 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2008. Specifications and information herein are subject to change without notice. PS No. A1235-4/4