AH8503 HIGH ACCURACY MICROPOWER LINEAR HALL EFFECT SENSOR Description Pin Assignments The AH8503 is a high accuracy, micropower linear Hall effect sensor with an 8-bit output resolution. The output voltage is ratiometric to the supply voltage and proportional to the magnetic flux density perpendicular to the part marking surface. The output null voltage is at half the supply voltage. (Top View) AH8503 is a trimmed device with typical sensitivity of 2.25mV/G and 3.8mV/G at 1.8V and 3V respectively with an accuracy of 3% at +25°C. The device has a typical input referred rms noise of 0.36G and 0.24G at 1.8V and 3.0V. Designed for battery powered consumer equipment to office equipment, home appliances and industrial applications, the AH8503 can operate over the supply range of 1.6V to 3.6V. The device has a CNTRL pin to select the operating modes and sampling rate to minimize power consumption. The device operates in default micropower mode with a sampling rate of 24Hz typical and consumes only 13µA typical at 1.8V. In turbo mode with a continuous 6.25kHz sample rate, the current consumption is 1mA typical. In external-drive mode, the CNTRL be can be used to change the sampling frequency up to 7.14KHz with current consumption of 1.16mA typical at 1.8V. To minimize PCB space the AH8503 are available in small low profile U-DFN2020-6. Features • • • • • • • • • • • • • High Accuracy Linear Hall Effect Sensor with +/-400G Sense Range and Output Voltage with 8-bit resolution Supply Voltage of 1.6V to 3.6V High Accuracy: Trimmed Sensitivity of 2.225mV/G and 3.8mV/G at 1.8V and 3V respectively with accuracy of 3% at +25°C. Low Offset Voltage Micropower (Default), Turbo and External-Drive Modes Ultra Low Average Supply Current 13µA typical in micropower mode (default) period at 1.8V 1.01mA typical in turbo mode at 1.8V 1.16mA typical in external drive mode with 7.14kHz sampling rate at 1.8V Chopper Stabilized Design with Superior Temperature Stability, Minimal Sensitivity Drift, Enhanced Immunity to Physical Stress Output Voltage Maintained at ‘Sleep’ Mode -40°C to +85°C Operating Temperature High ESD capability of 6kV Human Body Model Small Low Profile U-DFN2020-6 Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Notes: U-DFN2020-6 Applications • • • • • • • High Accuracy Level, Proximity, Position and Travel Detection Button Press Detection in Digital Still, Video Cameras and Handheld Gaming Consoles Accurate Door, Lids and Tray Position Detection Liquid Level Detection Joy Stick Control – Gaming and Industrial Applications Smart Meters Contact-Less Level, Proximity and Position Measurement in Home Appliances and Industrial Applications 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. AH8503 Document number: DS37684 Rev. 1 - 2 1 of 19 www.diodes.com February 2015 © Diodes Incorporated AH8503 Typical Applications Circuit Note: 4. CIN is for power stabilization and to strengthen the noise immunity, the recommended capacitance is 100nF typical and should be placed as close to the supply pin as possible. Pin Descriptions Package: U-DFN2020-6 Pin Number Pin Name 1 OUTPUT 2 NC 3 VDD Function Output Pin No Connection (Note 5) Power Supply Input Device Control Pin: The CNTRL pin selects the modes of operation (Micropower Mode, Turbo Mode and External-Drive Mode) and adjusts the sampling rate in External Drive Mode to minimize the power consumption. When CNTRL = GND or floating, the device operates in default Micropower Mode with 24Hz sampling rate and consumes 13µA typical at 1.8V. The CNTRL pin is internally pulled low. 4 CNTRL When CNTRL = VDD, the device is on and operates in Turbo Mode with continuous sampling rate of 6.25kHz typical consuming 1.01mA typical at 1.8V In External Drive Mode, an external PWM signal can be used to drive the CNTRL pin to adjust the sampling frequency form 24Hz typical up to 7.14kHz typical. If external PWM pulse is used, the minimum pulse width needed on the CNTRL pin to start a sample/conversion is 20µs typical. We recommended using a pulse width of 40µs minimum. The minimum sample and conversion cycle is140µs typical. Note: 5 GND 6 NC No Connection (Note 5) Pad Pad The center exposed pad – No connection internally. The exposed pad can be left open (unconnected) or tied to the GND on the PCB layout. Ground Pin 5. NC is “No Connection” pin and is not connected internally. This pin can be left open or tied to ground. AH8503 Document number: DS37684 Rev. 1 - 2 2 of 19 www.diodes.com February 2015 © Diodes Incorporated AH8503 Functional Block Diagram Absolute Maximum Ratings (Note 6) (@TA = +25°C, unless otherwise specified.) Symbol Parameter VDD and VOUT Supply Voltage and Output Voltage (Note 7) VDD_REV and VOUT_REV Reverse Supply and Output Voltage IOUT Output Current (limited by 10kOhms output resistor) B Magnetic Flux Density Withstand PD Package Power Dissipation Ts Storage Temperature Range TJ Maximum Junction Temperature ESD HBM Notes: Rating Unit 4 V -0.3 V VDD/10 mA Unlimited U-DFN2020-6 Human Body Model (HMB) ESD Capability 230 mW -65 to +150 °C 150 °C 6 kV 6. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only; functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time. 7. The absolute maximum VDD of 4V is a transient stress rating and is not meant as a functional operating condition. It is not recommended to operate the device at the absolute maximum rated conditions for any period of time. Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.) Symbol VDD TA Parameter Conditions Rating Unit Supply Voltage Operating 1.6V to 3.6V V Operating Temperature Range Operating -40 to +85 °C AH8503 Document number: DS37684 Rev. 1 - 2 3 of 19 www.diodes.com February 2015 © Diodes Incorporated AH8503 Electrical Characteristics (Notes 8 & 9) (@TA = +25°C, VDD = 1.8V, unless otherwise specified.) Symbol Parameter Conditions Min Typ Max Unit - 13 20 µA - 17 25 µA - 1.01 1.3 mA - 1.44 1.8 mA - 1.16 1.5 mA - 1.65 2.1 mA Supply Current IDD_uP_MODE IDD_TURBO_MODE Average Supply Current in Micropower Mode with Continuous Sampling Rate of 24Hz VOUTPUT = VDD/2, CNTRL = GND, VDD = 1.8V (CNTRL = GND Continuously) (Note 10) Average Supply Current in Turbo VOUTPUT = VDD/2, CNTRL = VDD, VDD = 1.8V (Note 10) VOUTPUT = VDD/2, CNTRL = GND, VDD = 3.0V Mode with Continuous Sampling Rate (Note 10) of 6.25Hz VOUTPUT = VDD/2, CNTRL = GND, VDD = 3.0V (CNTRL = VDD Continuously) (Note 10) VOUTPUT = VDD/2, CNTRL clocking at 7.14kHz VDD = 1.8V IDD_7kHz_EXTDRV Average Supply Current at 7.14kHz Sampling Rate When CNTRL is Externally Driven (Note 10) VOUTPUT = VDD/2, CNTRL clocking at 7.14kHz VDD = 3V (Note 10) Notes: 8. When power is initially turned on, the operating VDD (1.6V to 3.6V) must be applied to guaranteed the output sampling. After the supply voltage reaches minimum operating voltage, the output state is valid after after tON_INITIAL. 9. Typical data is at TA = +25°C, VDD = 1.8V unless otherwise stated. 10. The parameters are not tested in production, they are guaranteed by design, characterization and process control. AH8503 Document number: DS37684 Rev. 1 - 2 4 of 19 www.diodes.com February 2015 © Diodes Incorporated AH8503 Electrical Characteristics (continued) (@TA = +25°C, VDD = 1.8V, unless otherwise specified.) CNTRL pin timing, conversion rate and IDD supply current relationship AH8503 CNTRL Pin Driven Externally – External Drive Mode 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 ten EN TCONV Tclk OUT DATA0 DATA1 Status AWAKE(ON) SLEEP AWAKE(ON) SLEEP ICC 1.35mA 8.9µA 1.35mA 8.9µA Status: AWAKE: chip processing phase (12*Tclk) , SLEEP: chip retain data Tclk: internal clock period, typical = 10µs ten : pulse width of enable signal, minimum=2*Tclk= 20µs (typical) TCONV: One sample/conversion cycle = 14*Tclk= 140µs (typical) IDD ( @ VDD = 1.8V, 25oC): (1) If CNTRL pin clocked at maximum (~7.14 kHz): IDD = 1.35 mA*12/14+8.93µA*2/14 ≈ 1.16mA (2) If CNTRL pin clocked at 24Hz: IDD ≈ 13µA (3) If CNTRL clocking period =T, IDD = 1.35mA*120µs/T + 8.93µA*(T-120µs)/T AH8503 CNTRL = GND or Logic Low (0) Continuously – Micropower Mode 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 4095 4096 4097 4098 4099 4100 4101 4102 4103 4104 4105 4106 4107 4108 4109 4110 TS=4096*Tclk EN DATA0 OUT Status AWAKE(ON) SLEEP ICC 1.35mA 8.9uA DATA1 AWAKE(ON) SLEEP 1.35mA 8.9uA Tclk: internal clock period, typical= 10µs TS: awake cycle time = 4096*Tclk ≈ 41ms AH8503 CNTRL = VDD or Logic High Continuously – Turbo Mode 0 1 2 3 4 5 6 7 EN OUT 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 TCONV Tclk DATA0 Status AWAKE(ON) SLEEP ICC 1.35mA 8.9µA DATA1 AWAKE(ON) 1.35mA SLEEP 8.9µA Tclk: internal clock period, typical= 10µs TCONV: One sample/conversion period when ENABLE = Hugh (VDD )= 16*Tclk=160µs IDD ( @ VDD = 1.8V, 25oC): IDD = 1.35mA*120µs/160µs + 8.93µA*40µs/160µs ≈ 1.01mA (typical) AH8503 Document number: DS37684 Rev. 1 - 2 5 of 19 www.diodes.com February 2015 © Diodes Incorporated AH8503 Electrical Characteristics (cont.) (Notes 11, 12 & 13) (@TA = +25°C, VDD = 1.8V, unless otherwise specified.) Symbol tON_INITIAL Parameter Initial Power On Time Min Typ Max Unit VDD = 1.8V, TA = +25°C, CIN=0.1µF, VDD rise time =10µs (Note 14) Conditions - 1 - ms VDD = 3V, TA = +25°C, CIN=0.1µF, VDD rise time =10µs (Note 14) - 0.2 - ms - 20 - µs Minimum Pulse Width on CNTRL Pin To Start One Conversion Cycle When VDD = 1.6V to 3.6V, TA = -40°C to +85°C Driving CNTRL Pin Externally (Note 14) (See application note section) ten Minimum Period of One Sample/Conversion Cycle VDD = 1.6V to 3.6V, TA = -40°C to +85°C (Note 14) 100 140 200 µs Maximum Sampling Frequency VDD = 1.6V to 3.6V, TA = -40°C to +85°C, (Note 14) - 7.14 - kHz Sampling Frequency in Turbo Mode with CNTRL = High (VDD), f_TURBO_MODE CNTRL = VDD or Logic High VDD = 1.6V to 3.6V, TA = -40°C to +85°C (Note 14) Continuously - 6.25 - kHz CNTRL = High (VDD), VDD = 1.6V to 3.6V, TA = -40°C to +85°C (Note 14) - 24 - Hz CNTRL = High (VDD), VDD = 1.6V to 3.6V, TA = -40°C to +85°C (Note 14) - 0.16 - ms Awake or Sampling Period in CNTRL = High (VDD), Micropower Mode with CNTRL = GND or VDD = 1.6V to 3.6V, TA = -40°C to +85°C (Note 14) Logic Low Continuously - 41.6 - ms TCONV fMAX f_uP_MODE Sampling Frequency in Micropower Mode with CNTRL = GND or Logic Low Continuously Awake or Sampling Period in Turbo T_TURBO_MODE Mode with CNTRL = VDD or Logic High Continuously T_uP_MODE VCNTRL_LOW CNTRL Pin Input Low Voltage VCNTRL_HIGH CNTRL Pin Input High Voltage VDD = 1.8V (Note 13) 0.4 0.5 0.6 V VDD = 3.0V (Note 13) 0.8 0.9 1 V VDD = 1.8V (Note 13) 1.2 1.3 1.4 V VDD = 3V 2.2 2.3 2.4 V CNTRL = VDD or GND, VDD = 1.6V to 3.6V, TA = -40°C to +85°C, (Note 14) - 10 13 kΩ (Note 13) Output Characteristics ROUT DC Output Resistance Noise_RMS ADCRES DACRES VOUT_RES Input Referred Noise, RMS (Note 14) Internal ADC and DAC resolution CIN = Open, VDD = 1.8V, TA = +25°C, - 0.36 - G CIN = Open, VDD = 3.0V, TA = +25°C, - 0.24 - G (Note 14) - 8 - Bit Output Voltage Resolution VDD = 1.6V to 3.6V, TA = -40°C to +85°C - VDD/256 - mV VOUTH Max. Output Voltage VDD = 1.6V to 3.6V, TA = -40°C to +85°C - VDD*255/256 - V VOUTL Min. Output Voltage VDD = 1.6V to 3.6V, TA = -40°C to +85°C - 0 - V Notes: 11. When power is initially turned on, the operating VDD (1.6V to 3.6V) must be applied to guarantee the output sampling. The output state is valid after tON_INITIAL from the supply voltage reaching the minimum operating voltage. 12. Typical data is at TA = +25°C, VDD = 1.8V unless otherwise stated. 13. Maximum and minimum parameters values over operating temperature range are not tested in production, they are guaranteed by design, characterization and process control. 14. The parameter is not tested in production, they are guaranteed by design, characterization and process control. AH8503 Document number: DS37684 Rev. 1 - 2 6 of 19 www.diodes.com February 2015 © Diodes Incorporated AH8503 Electrical Characteristics (cont.) (Notes 11, 12 & 13) (@TA = +25°C, VDD = 1.8V, unless otherwise specified.) Symbol Magnetic Characteristics BRANGE GRES VNULL VOFFSET VSENS VSENS_ACC TC_ERRSENS Notes: Parameter Measurable Magnetic Flux Density Range Gauss Resolution Quiescent Output Voltage with Zero Gauss Quiescent Output Voltage Offset Output Voltage Sensitivity Sensitivity Accuracy Sensitivity Error over Full Temperature Lin+ Positive Linearity (span linearity) Lin- Negative Linearity (span linearity) Conditions Min Typ Max Unit VDD = 1.8V, TA = +25°C ±388 ±400 ±412 G VDD = 3V, TA = +25°C ±382 ±395 ±408 G VDD = 1.8V, TA = +25°C 3.033 3.125 3.221 G/LSB VDD = 3V, TA = +25°C 2.994 3.084 3.179 G/LSB B = 0.5G, TA = +25°C - VDD / 2 - V VDD = 1.8V, TA = +25°C 0.882 0.9 0.918 V VDD = 3V, TA = +25°C 1.47 1.5 1.53 V B = 0.5G, VDD = 1.8V, TA = +25°C -1% - 1% % of VDD B = 0.5G, VDD = 3V, TA = +25°C -1% - 1% % of VDD B = 0.5G, VDD = 1.6V to 3.6V, TA = -40°C to +85°C (Note 14) -1.5 - 1.5 % of VDD VDD = 1.8V, TA = +25°C 2.183 2.25 2.318 VDD = 3V, TA = +25°C 3.686 3.80 3.914 VDD = 1.8V, TA = +25°C -3 - 3 % VDD = 3V, TA = +25°C mV/G -3 - 3 % VDD = fixed at any one voltage between 1.6V to 3.6V, TA = -40°C to +85°C (Note 14, Note 15) -6 - 6 % VDD=fixed, TA = -40°C to +85°C (Note 14) -3 - 3 % VDD = 1.8V, TA = +25°C (Note 14) - 99.9 - % VDD = 3.0V, TA = +25°C (Note 14) - 99.7 - % VDD = 1.8V, TA = +25°C (Note 14) - 100.1 - % VDD = 3.0V, TA = +25°C (Note 14) - 100.4 - % 11. When power is initially turned on, the operating VDD (1.6V to 3.6V) must be applied to guarantee the output sampling. The output state is valid after tON_INITIAL from the supply voltage reaching the minimum operating voltage. 12. Typical data is at TA = +25°C, VDD = 1.8V unless otherwise stated. 13. Maximum and minimum parameters values over operating temperature range are not tested in production, they are guaranteed by design, characterization and process control. 14. The parameter is not tested in production, they are guaranteed by design, characterization and process control. 15. This term constitutes of output voltage sensitivity temperature coefficient error and sensitivity trim accuracy. AH8503 Document number: DS37684 Rev. 1 - 2 7 of 19 www.diodes.com February 2015 © Diodes Incorporated AH8503 Application Note CNTRL Pin - Awake and Sleep Period and Operating Mode Control CNTRL pin controls the device operating mode (Micropower, Turbo, External Drive modes) and “Awake” and “Sleep” periods during external drive mode. When the CNTRL pin is pulled low or GND continuously, the device operates in micropower mode with a sampling rate of 24Hz and consumes only 13µA typical at 1.8V. The CNTRL pin is internally pulled low and therefore the default mode is micropower mode if the CNTRL pin is left floating. When CNTRL is pulled high (CNTRL = VDD or pulled high) continuously, the device runs in Turbo Mode with a sampling rate of 6.25kHz and consumes 1.01mA typical at 1.8V. When the CNTRL pin is pulled high continuously, the conversion time TCONV is 16 clock cycles (160µs typical) and therefore the sampling rate is 6.25kHz. If the CNTRL pin is driven externally with a PWM signal (External Drive Mode), the sampling rate can be adjusted from 24Hz to 7.14kHz. A minimum pulse width on CNTRL pin to start a sample/conversion is 20µs typical; we recommend using a pulse width of 40µs minimum. In external drive mode with a PWM signal on the CNTRL pin, the conversion time (signal acquisition, conversion and output update) TCONV is 14 clock cycles (140µs typical). When the CNTRL goes high, the sample trigger delay is 1 clock pulse (10µs) where the supply current remains at 8.93µA typical at VDD = 1.8V. After the sample trigger delay, the next 12 clock pulse (120µs typical) is the ‘Awake’ period, where the typical supply current is 1.35mA at 1.8V supply. The next pulse (10µs) is used to update the output stage and during this time the supply current drops back to 8.93µA typical at 1.8V supply. Therefore, the average supply current of the device depends on the sampling frequency and at the maximum sampling rate of 7.14kHz, it is 1.16mA typical at 1.8V. The maximum sampling frequency is 7.14kHz when the CNTRL pin is externally driven with a PWM signal. For CNTRL pin clocking period of T, the average current is given by DD = DD = . × _ × . × _ × (@ 1.8V) (General equation) Quiescent Output Voltage VNULL and Offset Voltage The figure below shows the ideal transfer curve near zero magnetic field (B = 0Gauss). Zero Gauss is the transition point between VOUTPUT = VDD*127/128 and VOUTPUT = VDD/2. When B is slightly larger than zero, the output is one-half the supply voltage typically. Quiescent output voltage (VNULL) is defined as the typical output voltage when B = 0.5Gauss (slightly higher than 0G). Any difference of VNULL from VDD/2 introduces offset (VOFSET). Transfer Curve Near 0Gauss AH8503 Document number: DS37684 Rev. 1 - 2 8 of 19 www.diodes.com February 2015 © Diodes Incorporated AH8503 Application Note (continued) Sensitivity and Transfer Characteristic The device responds to the magnetic flux density perpendicular to the part marking surface. For South pole magnetic flux density increase from 0G, the output voltage will increase from VNULL and for a North magnetic pole field, the output will decrease from VNULL. The changes in the voltage level up or down are symmetrical to VNULL and are proportional to the magnetic flux density. The output voltage change is proportional to the magnitude and polarity of the magnetic field perpendicular to the part marking surface. This proportionality is defined as output voltage sensitivity and is given by: !SENS = !OUTB_MAX − !OUTB_MIN .MAX − .MIN The AH8503 has a measurable magnetic field range of +/-400G and output voltage range of 0V to (255/256)VDD. Therefore, sensitivity at 1.8V is given by: 1.8! !SENS_1.8V = = 2.256!/3 8003 The device has an internal ADC and DAC with resolution of 8-bits. Therefore the measurement resolution is 3.125G/LSB at VDD = 1.8V. In terms of voltage, the output resolution at 1.8V is 7mV/LSB typical. The device follows the 8-bit step for transfer curve superimposed on the VSENS above. This difference in theoretical linear value with 8-bit resolution steps produces a measurement (quantization) error at each step. Output Voltage VOUTPUT (V) Quantization error (also measurement error) = 0.5*step = VDD/512(output voltage) Or = Full magnetic range/512 (input magnetic field) 3.9 TA = +25 °C 3.6 3.3 3.0 2.7 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0.0 -500 -400 -300 3.6V 3.3V 3.0V 1.8V 1.6V -200 -100 0 100 200 300 400 500 Magnetic Flux Density, B (Gauss) Transfer Curve – Output Voltage vs Magnetic Flux Density AH8503 Document number: DS37684 Rev. 1 - 2 9 of 19 www.diodes.com February 2015 © Diodes Incorporated AH8503 Application Note (cont.) Span Linearity Coordinate of transition points (V0~V255 and B0~B254) can be extracted from a transfer curve. Span linearity is defined and based on these coordinate points. Span linearity is defined as linearity arising from sensitivity differences between the maximum flux density range and half of the range for positive and negative flux density. Referring to the diagram below, north field span linearity LIN- and south field span linearity LIN+ are given by: 89−= 89+= AH8503 Document number: DS37684 Rev. 1 - 2 !0 − !127/.0 − .127 !64 − !127/.64 − .127 !254 − !127/.254 − .127 !190 − !127/.190 − .127 10 of 19 www.diodes.com February 2015 © Diodes Incorporated AH8503 Typical Operating Characteristics Average Supply Current Average Supply Current IDD (µA) 24.0 22.0 20.0 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 Micropower Mode – 24Hz Sample Rate Micropower Mode, CNTRL = GND, TA = +25 °C, 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 Average Supply Current IDD (mA) 3.6V 3.3V 3.0V 2.5V 1.8V 1.6V -50 -40 -30 -20 -10 30 40 50 60 70 80 Temperature ( C) 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Turbo Mode, CNTRL = VDD 3.6V 3.3V 3.0V 2.5V 1.8V 1.6V -50 -40 -30 -20 -10 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 40 50 60 70 80 90 3.6V 3.3V 3.0V 2.5V 1.8V 1.6V -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 Temperature (oC) Average Supply Current (CNTRL = PWM) vs Supply Voltage Document number: DS37684 Rev. 1 - 2 30 Externally Driven, CNTRL = 20µs pulse 7.14kHz PWM Supply Voltage (V) AH8503 20 External Drive Mode with 7.14kHz Sampling Rate Average Supply Current IDD (mA) 2 10 Average Supply Current (CNTRL = VDD) vs Temperature Externally Driven, CNTRL = 20µs pulse 7.14kHz PWM, TA = +25 °C 1.8 0 Temperature (oC) External Drive Mode with 7.14kHz Sampling Rate 1.6 90 Turbo Mode – 6.25kHz Sample Rate Average Supply Current (CNTRL = VDD) vs Supply Voltage Average Supply Current IDD (mA) 20 Average Supply Current (CNTRL = GND) vs Temperature 1.6 1.4 10 Supply Voltage (V) Supply Voltage (V) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 Average Supply Current (CNTRL= GND) vs Supply Voltage Turbo Mode, CNTRL = VDD , TA = +25 °C 1.4 Micropower Mode, CNTRL = GND o Turbo Mode – 6.25kHz Sample Rate 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 24.0 22.0 20.0 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 3.8 Average Supply Current IDD (mA) Average Supply Current IDD_uP (µA) Micropower Mode – 24Hz Sample Rate Average Supply Current (CNTRL = PWM) vs Temperature 11 of 19 www.diodes.com February 2015 © Diodes Incorporated AH8503 Typical Operating Characteristics (continued) 5.0 CIN = 0.1µF, VDD rise time 10µs, TA = +25 °C 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 Initial Power On Time tON_INITIAL (ms) Initial Power On Time tON_INITIAL (ms) Typical Initial Power On Time 18.0 CIN = 0.1µF, VDD rise time 10µs 16.0 1.6V 14.0 12.0 10.0 8.0 6.0 1.8V 4.0 2.0 2.5V 3.0V 3.3 V 0.0 -50 -40 -30 3.6 V -20 -10 0 10 20 30 40 50 60 70 80 90 Temperature (oC) Supply Voltage (V) Initial Power On Time vs Temperature Initial Power On Time vs Supply Voltage Typical Sensitivity 5.0 5.0 Sensitivity (mV/Gauss) Sensitivity (mV/Gauss) 5.5 TA = +25 °C 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.6V 4.5 3.3V 4.0 3.0V 3.5 2.5V 3.0 2.5 1.8V 1.6V 2.0 1.5 1.0 0.5 3.8 -50 -30 -20 -10 0 10 20 30 40 Supply Voltage (V) Temperature (oC) Sensitivity vs Supply Voltage Sensitivity vs Temperature 2.40 50 60 70 80 90 50 60 70 80 90 4.00 VDD = 1.8V VDD = 3.0V 2.35 Sensitivity (mV/Gauss) Sensitivity (mV/Gauss) -40 2.30 1.8V 2.25 2.20 2.15 3.90 3.80 3.0V 3.70 3.60 3.50 2.10 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 -50 -40 -30 -20 -10 0 10 20 30 40 Temperature (oC) Temperature (oC) Sensitivity vs Temperature Sensitivity vs Temperature AH8503 Document number: DS37684 Rev. 1 - 2 12 of 19 www.diodes.com February 2015 © Diodes Incorporated AH8503 Typical Operating Characteristics (cont.) Output Voltage VOUTPUT (V) 2.0 1.8 1.8V 1.6V -400 -300 -200 -100 0 100 200 300 400 1.6 VDD = 1.6V, TA = -40 °C to +85 °C 1.4 -40C 1.2 1.0 0C 0.8 25C 0.6 85C 0.4 0.2 0 -500 500 -400 -300 -200 -100 0 100 200 300 Magnetic Flux Density, B (Gauss) Magnetic Flux Density, B (Gauss) Output Voltage vs Magnetic Flux Density Output Voltage vs Magntic Flux Density 3.5 1.6 1.4 -40C 1.2 0C 1.0 25C 0.8 0.6 85C 0.4 0.2 -400 Output Voltage VOUTPUT (V) 3.6V 3.3V 3.0V VDD = 1.8V, TA = -40 °C to +85 °C 0 -500 Output Voltage VOUTPUT (V) 1.8 = +25 °C -300 -200 -100 0 100 200 300 400 Output Voltage VOUTPUT (V) 3.9 3.6 TA 3.3 3.0 2.7 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0.0 -500 2.5 -40C 2.0 0C 1.5 25C 1.0 85C 0.5 -400 -300 -200 -100 0 100 200 300 Magnetic Flux Density, B (Gauss) Magnetic Flux Density, B (Gauss) Output Voltage vs Magntic Flux Density -40C 0C 25C 85C 100 200 300 400 500 3.9 VDD = 3.6V, TA = -40 °C to +85 °C 3.6 3.3 3.0 2.7 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0 -500 -400 -300 -200 -100 0 25C 85C 100 200 300 Output Voltage vs Magntic Flux Density Output Voltage vs Magntic Flux Density 13 of 19 www.diodes.com 500 0C Magnetic Flux Density, B (Gauss) Document number: DS37684 Rev. 1 - 2 400 -40C Magnetic Flux Density, B (Gauss) AH8503 500 VDD = 3.0V, TA = -40 °C to +85 °C Output Voltage vs Magntic Flux Density 3.6 VDD = 3.3V, TA = -40 °C to +85 °C 3.3 3.0 2.7 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0 -500 -400 -300 -200 -100 0 400 3.0 0 -500 500 Output Voltage VOUTPUT (V) Output Voltage VOUTPUT (V) Typical Transfer Curves 400 500 February 2015 © Diodes Incorporated AH8503 Typical Operating Characteristics (cont.) Typical Null Voltage: Output Voltage at B = 0+ Gauss (Note 16) 2.1 B = 0+ Gauss, TA = +25 °C B = 0+ Gauss 1.8 1.9 1.6 1.7 3.3V 1.5 3.0V Null Voltage (V) Null Voltage (V) 2.0 1.4 1.2 1.0 0.8 3.6V 1.3 2.5V 1.1 1.8V 0.9 1.6V 0.7 0.6 0.5 0.4 0.3 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 -50 -40 -30 -20 -10 10 20 30 40 50 60 70 80 90 50 60 70 80 90 Temperature (oC) Supply Voltage (V) Null Voltage vs Supply Voltage 0.920 0 Null Voltage vs Temperature 1.54 B = 0+ Gauss, VDD = 1.8V B = 0+ Gauss, VDD = 3.0V 1.53 0.915 Null Voltage (V) Null Voltage (V) 1.52 0.910 0.905 1.8V 0.900 0.895 1.51 1.50 3.0V 1.49 1.48 1.47 1.46 1.45 0.890 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 -50 -30 -20 -10 0 10 20 30 40 Temperature ( C) Temperature ( C) Null Voltage vs Temperature Null Voltage vs Temperature Note: -40 o o 16. Null voltage is the voltage with magnetic flux density B = 0G at the sensor. B = 0G is also the transistion point at VDD*127/128 for internal ADC and DAC. To avoid the transition point fluctuation during measurement of null voltage, B = 0+ Gauss (e.g. 0.5G which is smaller than 1LSB gauss step of 3.125G) is used. See definition of the null voltage in application section. AH8503 Document number: DS37684 Rev. 1 - 2 14 of 19 www.diodes.com February 2015 © Diodes Incorporated AH8503 Typical Operating Characteristics (cont.) Typical Null Voltage Offset: (Output Voltage - VDD/2) at B = 0+ Gauss (Note 16) 10.0 B = 0+ Gauss, TA = +25 °C Null Voltage Offset (mV) Null Voltage Offset (mV) 8.0 6.0 4.0 2.0 0.0 -2.0 -4.0 -6.0 -8.0 -10.0 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 -2.0 -4.0 -6.0 -8.0 -10.0 -12.0 -14.0 3.8 B = 0+ Gauss 1.6V 1.8V 2.5V 3.0V 3.3V 3.6V -50 -40 -30 -20 -10 12.0 B = 0+ Gauss, VDD = 1.8V Null Voltage Offset (mV) Null Voltagte Offset (mV) 3.0 2.0 1.8V 1.0 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 30 40 50 60 70 80 90 60 70 80 90 B = 0+ Gauss, VDD = 3.0V 10.0 8.0 6.0 4.0 2.0 0.0 -2.0 -4.0 3.0V -6.0 -8.0 -10.0 -12.0 -6.0 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 -50 -40 -30 -20 -10 0 10 20 30 40 50 o o Temperature ( C) Temperature ( C) Null Voltage Offset vs Temperature Null Voltage Offset vs Temperature Note: 20 Null Voltage Offset vs Temperature Null Voltage Offset vs Supply Voltage 5.0 4.0 10 Temperature (oC) Supply Voltage (V) 6.0 0 16. Null voltage is the voltage with magnetic flux density B = 0G at the sensor. B = 0G is also the transistion point at VDD*127/128 for internal ADC and DAC. To avoid the transition point fluctuation during measurement of null voltage, B = 0+ Gauss (e.g. 0.5G which is smaller than 1LSB gauss step of 3.125G) is used. See definition of the null voltage in application section. AH8503 Document number: DS37684 Rev. 1 - 2 15 of 19 www.diodes.com February 2015 © Diodes Incorporated AH8503 Ordering Information Part Number Package Code Packaging AH8503-FDC-7 FDC U-DFN2020-6 7” Tape and Reel Quantity Part Number Suffix 3,000/Tape & Reel -7 Marking Information (1) Package Type: U-DFN2020-6 Part Number AH8503-FDC-7 AH8503 Document number: DS37684 Rev. 1 - 2 Package U-DFN2020-6 16 of 19 www.diodes.com Identification Code KY February 2015 © Diodes Incorporated AH8503 Package Outline Dimensions (All dimensions in mm.) Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. (1) Package Type: U-DFN2020-6 A1 A A3 Seating Plane D D2 Pin #1 ID E E2 Z(4x) U-DFN2020-6 Type C Dim Min Max Typ A 0.57 0.63 0.60 A1 0.00 0.05 0.02 A3 0.15 b 0.25 0.35 0.30 D 1.95 2.075 2.00 D2 1.55 1.75 1.65 E 1.95 2.075 2.0 E2 0.86 1.06 0.96 e 0.65 L 0.25 0.35 0.30 Z 0.20 All Dimensions in mm L b e Bottom View Sensor Location (TBD) AH8503 Document number: DS37684 Rev. 1 - 2 17 of 19 www.diodes.com February 2015 © Diodes Incorporated AH8503 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. (1) Package Type: U-DFN2020-6 X2 X1 Dimensions Value (in mm) C 0.650 X 0.350 X1 1.650 X2 1.700 Y 0.525 Y1 1.010 Y2 2.400 Y Y2 Y1 X AH8503 Document number: DS37684 Rev. 1 - 2 C 18 of 19 www.diodes.com February 2015 © Diodes Incorporated AH8503 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com AH8503 Document number: DS37684 Rev. 1 - 2 19 of 19 www.diodes.com February 2015 © Diodes Incorporated