WILLAS FM120-M+ THRU BSS8LT1 FM1200-M+ 200 mAmps, 50 Volts Power MOSFET 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. high efficiency. • Low power loss,SOT–23 N–Channel 0.146(3.7) 0.130(3.3) • High current capability, low forward voltage drop. surge capability. • High Typical applications are dc–dc converters, power management in for overvoltage protection. • Guardring portable and battery–powered products such as computers, printers, high-speed switching. • Ultracards, PCMCIA cellular and cordless telephones. • Silicon epitaxial planar chip, metal silicon junction. Threshold Voltage (V GS(th): 0.5V...1.5V) • Low it ideal for low parts meet environmental standards makes of • Lead-free MIL-STD-19500 /228 voltage applications • RoHS product for packing code suffix "G" • Miniature SOT–23 Surface Mount Package saves board space 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Halogen free product for packing code suffix "H" Mechanical packagedata is available • Pb-Free 0.040(1.0) 0.024(0.6) : UL94-V0 flame retardant • Epoxy RoHS product for rated packing code suffix ”G” plastic,for SOD-123H • Case : Molded Halogen free product packing code suffix “H” , • Terminals :Plated terminals, solderable per MIL-STD-750 SOT –23 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) N - Channel 3 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MARKING DIAGRAM & PIN ASSIGNMENT Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. 1 For capacitive load, derate current by 20% RATINGS 2 Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 Maximum RMS Voltage VRMS 14 21 28 35 42 56 J1 70 Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 IO Maximum Average Forward Rectified Current 1.0 MAXIMUM RATINGS (TA = 25 o C unless otherwise noted) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Rating Typical Thermal Resistance (Note 2) Drain–to–Source Voltage Typical Junction Capacitance (Note 1) Gate–to–Source Voltage – Continuous Operating Temperature Range DrainTemperature Current Storage Range – Continuous @ TA = 25°C – Pulsed Drain Current (tp ≤ 10 µs) CHARACTERISTICS Maximum Forward Voltage at@ 1.0A Total Power Dissipation TADC = 25°C IFSM Symbol RΘJA VDSS CJ VGSTJ TSTG ID IDM SYMBOL PD VF Maximum Average at @T A=25℃ T T Operating and Reverse Storage Current Temperature J, stgIR @T A=125℃ 30 Value Unit 50 Vdc ± 20 225 mW 0.50 °C RθJA 556 °C/W 1- Measured at 1Lead MHZTemperature and applied reverse voltage of 4.0 VDC. Maximum for Soldering TL 260 °C Thermal Resistance – Junction–to–Ambient NOTES: Purposes, for 10 seconds 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 120 200 Volts 105 140 Volts 150 200 Volts Amps J1 = Device Code M = Month Code Amps ℃/W PF ORDERING INFORMATION -55 to +150 - 65 to +175 Package Device ℃ 0.70 0.85 0.5 10 ℃ Shipping 200 BSS138LT1 SOT–23 3000 Tape & Reel 800 FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH – 55 to 150 RatedRange DC Blocking Voltage 115 150 40 120 Vdc -55 to +125 mA 10 100 M SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 0.9 0.92 UNIT Volts mAmps WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU BSS8LT1 FM1200-M+ 200 mAmps, 50 Volts Power MOSFET 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) high efficiency. • Low power loss, forward voltage drop. • High current capability, lowCharacteristic • High surge capability. OFF CHARACTERISTICS • Guardring for overvoltage protection. Breakdown Voltage Ultra high-speed switching. •Drain–to–Source (VGS = 0epitaxial Vdc, ID =planar 250 µAdc) chip, metal silicon junction. • Silicon Lead-free parts Drain meet Current environmental standards of •Zero Gate Voltage 0.146(3.7) 0.130(3.3) Symbol V(BR)DSS IDSS MIL-STD-19500 /228 (VDS = 25 Vdc, VGS = 0 Vdc) packing code suffix "G" • RoHS (VDS =product 50 Vdc,for VGS = 0 Vdc) Halogen free product for packing code suffix "H" Gate–Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS Mechanical data ON CHARACTERISTICS (Note 1.) • Epoxy : UL94-V0 rated flame retardant Gate–Source Threshold Voltage SOD-123H • Case (VDS =: Molded VGS, ID =plastic, 1.0 mAdc) , •Static Terminals :Plated terminals, solderable per MIL-STD-750 Drain–to–Source On–Resistance (VGS = 2.75Method Vdc, ID <2026 200 mAdc, TA = –40°C to +85°C) (VGS = 5.0 Vdc, ID = by 200cathode mAdc) band • Polarity : Indicated 0.012(0.3) Typ. Min Typ Max Unit 50 – – Vdc – – – – 0.1 0.5 – – ±0.1 0.071(1.8) 0.056(1.4) µAdc µAdc 0.040(1.0) 0.024(0.6) VGS(th) 0.5 – 1.5 0.031(0.8) Typ. rDS(on) Transconductance Mounting Position : Any •Forward (VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz) • Weight : Approximated 0.011 gram Vdc 0.031(0.8) Typ. – 5.6 10 – (millimeters) 3.5 Dimensions– in inches and gfs Ohms 100 – – mmhos – 40 50 pF – 12 25 – 3.5 5.0 DYNAMIC CHARACTERISTICS MAXIMUM RATINGS AND CHARACTERISTICS (VDSELECTRICAL = 25 Vdc, VGS = 0, f = 1 MHz) Ciss Input Capacitance RatingsOutput at 25℃Capacitance ambient temperature unless otherwise specified. (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Coss Single phase half wave, 60Hz, resistive of inductive load. Transfer Capacitance (VDG = 25 Vdc, VGS = 0, f = 1 MHz) Crss For capacitive load, derate current by 20% SWITCHING CHARACTERISTICS (Note 2.) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH RATINGS UNIT Delay Time td(on) Marking Turn–On Code 12 13 14 15 16 – 18 – 10 20 115 ns 120 (VDD = 30 Vdc, ID = 0.2 Adc,) 20 30 40 50 60– 80 – 100 20 150 200 Maximum Recurrent PeakTime Reverse Voltage Volts VRRM Turn–Off Delay td(off) Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage 1. Pulse Test: Pulse Width ≤ 300 µs, Duty CycleVRMS ≤ 2%. Volts 2. Switching characteristics are independent of V operating junction temperature. Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 DC IO 1.0 Amps IFSM 30 Amps RΘJA 40 120 ℃/W Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) TJ Operating Temperature Range Storage Temperature Range CHARACTERISTICS PF -55 to +150 ℃ - 65 to +175 TSTG ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage -55 to +125 @T A=125℃ IR 0.50 0.70 0.85 0.5 10 0.9 0.92 Volts mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU BSS8LT1 FM1200-M+ 200 mAmps, 50 Volts Power MOSFET 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features CHARACTERISTICS dissipationELECTRICAL offers • Batch process design, excellent powerTYPICAL better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to 0.8 optimize board space. 0.9 • MIL-STD-19500 /228 0.3 RoHS product for packing code suffix "G" 0.2 Halogen free product for packing code suffix "H" VDS = 10 V 0.8 I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) VGS = 3.5 V TJ =loss, 25°C high efficiency. • Low power 0.7 • High current capability, low forward voltage drop. VGS = 3.25 V • High 0.6 surge capability. • Guardring for overvoltage protection. VGS = 3.0 V 0.5 high-speed switching. • Ultra VGS = 2.75 V epitaxial planar chip, metal silicon junction. • Silicon 0.4 • Lead-free parts meet environmental standards of VGS = 2.5 V Mechanical data 0.1 0.7 25°C -55°C 0.012(0.3) Typ. 150°C 0.6 0.071(1.8) 0.056(1.4) 0.5 0.4 0.3 0.2 0.1 • Epoxy : UL94-V0 rated flame retardant 0 2 4 5 6 7 8 9 10 1 3 SOD-123H plastic, • Case0: Molded , V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS terminals, solderable per MIL-STD-750 • Terminals :Plated 0 0.040(1.0) 0.024(0.6) 0 0.5 0.031(0.8) Typ. 1 1.5 2 2.5 3 3.5 0.031(0.8) Typ. 4 4.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Method 2026 Figure 2. Transfer Characteristics Figure 1. On–Region Characteristics • Polarity : Indicated by cathode band Position : Any • Mounting 2.2 • Weight : Approximated 0.011 gram RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 0.146(3.7) 0.130(3.3) Dimensions in inches and (millimeters) 1.25 ID = 1.0 mA 2 Marking Code RATINGS 1.2 Vgs(th) , VARIANCE (VOLTS) VGS = 10 V CHARACTERISTICS ID = 0.8 A 1.8 MAXIMUM RATINGS AND ELECTRICAL 1.125 Ratings at 25℃ ambient temperature unless otherwise specified. 1.6 Single phase half wave, 60Hz, resistive of inductive load. VGS = 4.5 V For capacitive1.4 load, derate current by 20% 1 ID = 0.5 A SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 1 Peak Reverse Voltage Maximum Recurrent 12 20 VRRM 13 30 Maximum RMS0.8 Voltage VRMS 14 21 Maximum DC Blocking Voltage VDC 20 30 0.6 -55Forward Rectified -5 Current Maximum Average 45 95 14 0.875 40 28 40 0.75 -55 145 IO TJ, JUNCTION TEMPERATURE (°C) Peak Forward Surge Current 8.3 ms single half sine-wave IFSM 15 50 Variation with TemperatureRΘJA Typical Thermal Resistance (Note 2) Operating Temperature Range Storage Temperature Range CHARACTERISTICS Maximum Forward Voltage at 1.0A DC VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Typical Junction Capacitance (Note 1) CJ 10 TJ VDS = 40 V J 56 70 105 80 100 150 -5 45 95 70 1.020 TJ, JUNCTION TEMPERATURE (°C) 30 120 Volts 140 Volts 200 Volts 145 Amps Amps ℃/W 120 -55 to +125 PF -55 to +150 ℃ - 65 to +175 0.50 0.70 ℃ 0.85 0.5 IR 10 0.9 0.92 Volts mAmps 4 ID = 200 mA 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 42 60 120 200 Figure 4. Threshold Voltage Variation with 40 Temperature VF 6 @T A=125℃ NOTES: 115 150 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 10 100 35 TSTG T = 25°C 8 18 80 50 -30 superimposed on rated load (JEDEC3. method) Figure On–Resistance 16 60 2 0 0 500 1000 1500 2000 2500 3000 QT, TOTAL GATE CHARGE (pC) Figure 5. Gate Charge 2012-06 2012-10 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU BSS8LT1 FM1200-M+ 200 mAmps, 50 Volts Power MOSFET 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features TYPICAL ELECTRICAL CHARACTERISTICS • Batch process design, excellent power dissipation offers RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) V optimize Vboard space. GS = 2.5 9 • Low power loss, high efficiency. 8 capability, low forward voltage drop. • High current capability. • High surge 7 • Guardring for overvoltage protection. 6 switching. • Ultra high-speed epitaxial planar chip, metal silicon junction. • Silicon 5 • Lead-free parts meet environmental standards of 4 MIL-STD-19500 /228 • RoHS3product for packing code suffix "G" Halogen free product for packing code suffix "H" 2 Mechanical data 150°C 25°C -55°C • Epoxy1 : UL94-V0 rated flame retardant 0.05 0.15 0 0.1 0.2 • Case : Molded plastic,I SOD-123H , DRAIN CURRENT (AMPS) D , • Terminals :Plated terminals, solderable per MIL-STD-750 0.25 RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) better reverse leakage current and thermal resistance. profile surface mounted application in order to • Low 10 6 5 RATINGS 2.5 4 Maximum Recurrent Peak Reverse Voltage VRRM 12 -55°C 20 Maximum RMS Voltage VRMS 14 1.5 0.35 0.3 VDC Maximum Average Forward Rectified IO ID,Current DRAIN CURRENT (AMPS) 0 0.1 0.05 2 1 0.15 0.2 0.25 0.420 0.45 CJ Typical Junction 1Capacitance (Note 1) 13 30 21 30 0.5 Storage Temperature Range I D , DIODE CURRENT (AMPS) 0.25 Dimensions in inches and (millimeters) VGS = 10 V 150°C 2.5 25°C 2 14 40 1.5 28 1 40 0 15 50 16 60 18 80 10 100 35 42 56 70 50 0.1 0.05 TSTG TJ = 150°C 25°C CHARACTERISTICS Volts 140 Volts 150 0.45 200 0.5 0.4 Volts Amps ℃/W 40 120 120 Amps PF -55 to +150 ℃ - 65 to +175 100 ℃ -55°C VF Maximum Average Reverse Current at @T A=25℃ 0.50 0.70 0.01 0.6 0.8 1.0 1.2 0 0.92 Volts mAmps Coss 20 2- Thermal Resistance From Junction to Ambient 0.9 Ciss10 40 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.85 0.5 60 IR @T A=125℃ 0.4 120 200 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT SYMBOL FM120-MH FM130-MH FM140-MH 80 Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage 60 0.15 0.2 800.25 0.31000.35 ID1.0 , DRAIN CURRENT (AMPS) 115 150 -55°C 105 Figure 9. On–Resistance versus Drain Current 30 -55 to +125 TJ Operating Temperature Range 0.2 0.2 ID, DRAIN CURRENT (AMPS)0.031(0.8) Typ. RΘJA Typical Thermal Resistance (Note 2) 0 0.15 0.1 0.040(1.0) 0.024(0.6) 3 Figure 8. On–Resistance versusIFSM Drain Current 0.001 0.05 0 4 superimposed on rated load (JEDEC method) NOTES: -55°C 4.5 Peak Forward Surge Current 8.3 ms single half sine-wave 0.1 25°C 3 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT 2 1 Maximum DC Blocking Voltage 0.071(1.8) 0.056(1.4) 3.5 RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃4 ambient temperature unless otherwise specified. Single phase 3.5 half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% 3 25°C Marking Code 150°C 0.012(0.3) Typ. Figure 7. On–Resistance versus Drain Current RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 4.5 MAXIMUM 0.146(3.7) 0.130(3.3) 0.031(0.8) Typ. 150°C 5 VGS = 2.75 V 7 Figure 6. On–Resistance versus Drain Current Method 2026 • Polarity : Indicated by cathode band 6 • MountingVPosition GS = 4.5 V: Any 5.5 • Weight : Approximated 0.011 gram SOD-123H 8 Crss 0 5 10 15 20 25 VSD, DIODE FORWARD VOLTAGE (VOLTS) Figure 10. Body Diode Forward Voltage 2012-06 2012-10 Figure 11. Capacitance WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU BSS8LT1 FM1200-M+ 200 mAmps, 50 Volts Power MOSFET 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H .006(0.15)MIN. optimize board space. .063(1.60) .047(1.20) • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. .122(3.10) • Guardring for overvoltage protection. .106(2.70) • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) .110(2.80) • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.012(0.3) Typ. .086(2.10) • Low profile surface mounted application in order to SOT-23 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. .008(0.20) Method 2026 .080(2.04) • Polarity : Indicated by cathode band .070(1.78) • Mounting Position : Any Dimensions in inches and (millimeters) .003(0.08) • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .004(0.10)MAX. RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Volts Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 Volts Maximum DC Blocking Voltage .020(0.50) 20 VDC 30 40 50 60 80 100 150 200 Volts IO.012(0.30) Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM Dimensions in inches and (millimeters) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range TSTG CHARACTERISTICS @T A=125℃ NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient -55 to +125 0.037 0.95 1.0 Amps 30 Amps 40 120 ℃/W PF -55 to +150 ℃ - 65 to +175 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Average Reverse Current at @T A=25℃ 2012-10 0.037 0.95 VF Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage .055(1.40) .035(0.89) Maximum Recurrent Peak Reverse Voltage 0.50 IR 0.70 0.079 2.0 0.85 0.5 10 0.9 0.92 Volts mAmps 0.035 0.9 0.031 0.8 inches mm WILLAS ELECTRONIC CORP.