Powerex Power CM50TU-24H Six igbtmod 50 amperes/1200 volt Datasheet

CM50TU-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Six IGBTMOD™
U-Series Module
50 Amperes/1200 Volts
A
B
F
G
E
S 4 - Mounting
Holes
G
H
E
H
E
R
K
L
GuP
EuP
C
GuN
EuN
GvP
EvP
GwP
EwP
D
TC
Measured
Point
TC
Measured
Point
M
GwN
EwN
GvN
EvN
u
v
w
K
J
E
H
N
J
E
E
H
5 - M4 NUTS
0.110 - 0.5 Tab
P
Q
P
GuP
GvP
GwP
EuP
EvP
EwP
U
V
W
GuN
GvN
GwN
EuN
EvN
EwN
Features:
□ Low Drive Power
□ Low VCE(sat)
□ Discrete Super-Fast Recovery
(135ns) Free-Wheel Diode
□ Isolated Baseplate for Easy
Heat Sinking
N
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
Dimensions
Inches
Millimeters
A
4.02
102.0
K
0.05
1.25
B
3.15±0.01
80.0±0.25
L
0.74
18.7
M
1.55
39.3
N
0.12
91.0
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM50TU-24H is a
1200V (VCES), 50 Ampere SixIGBT IGBTMOD™ Power Module.
C
3.58
D
2.91±0.01
E
0.43
11.0
P
0.32
8.1
F
0.79
20.0
Q
1.02
26.0
G
0.39
10.0
R
0.47
11.85
Type
Current Rating
Amperes
VCES
Volts (x 50)
H
0.75
19.1
S
0.22 Dia.
5.5 Dia.
CM
50
24
J
0.79
20.0
74.0±0.25
3.05
93
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM50TU-24H
Six IGBTMOD™ U-Series Module
50 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Junction Temperature
Symbol
CM50TU-24H
Units
Tj
-40 to 150
°C
Tstg
-40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Volts
IC
50
Amperes
ICM
100*
Amperes
IE
50
Amperes
Peak Emitter Current**
IEM
100*
Amperes
Maximum Collector Dissipation (Tj < 150°C)
Pc
400
Watts
Mounting Torque, M4 Main Terminal
–
15
in-lb
Mounting Torque, M5 Mounting
–
31
in-lb
–
570
Grams
Viso
2500
Volts
Storage Temperature
Collector Current (Tc = 25°C)
Peak Collector Current (Tj ≤ 150°C)
Emitter Current**
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Voltage
Symbol
Test Conditions
Min.
Typ.
Max.
ICES
VCE = VCES, VGE = 0V
–
–
1
–
–
0.5
µA
4.5
6
7.5
Volts
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th)
IC = 5mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat)
Units
mA
IC = 50A, VGE = 15V, Tj = 25°C
–
2.9
3.7
Volts
IC = 50A, VGE = 15V, Tj = 125°C
–
2.85
–
Volts
Total Gate Charge
QG
VCC = 600V, IC = 50A, VGE = 15V
–
187
Emitter-Collector Voltage*
VEC
IE = 50A, VGE = 0V
–
–
3.2
–
nC
Min.
Typ.
Max.
Units
–
–
7.5
nf
–
–
2.6
nf
–
–
1.5
nf
Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Resistive
Turn-on Delay Time
td(on)
VCC = 600V, IC = 50A,
–
–
80
ns
Load
Rise Time
tr
VGE1 = VGE2 = 15V,
–
–
200
ns
Switch
Turn-off Delay Time
Times
Fall Time
VCE = 10V, VGE = 0V
td(off)
RG = 6.3V, Resistive
–
–
150
ns
tf
Load Switching Operation
–
–
350
ns
Diode Reverse Recovery Time
trr
IE = 50A, diE/dt = -100A/µs
–
–
300
ns
Diode Reverse Recovery Charge
Qrr
IE = 50A, diE/dt = -100A/µs
–
0.28
–
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Thermal Resistance, Junction to Case
Rth(j-c)Q
Per IGBT 1/6 Module
–
–
0.31
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)D
Per Free-Wheel Diode 1/6 Module
–
–
0.7
°C/W
Rth(c-f)
Per Module, Thermal Grease Applied
–
0.018
–
°C/W
Contact Thermal Resistance
94
Max.
Units
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM50TU-24H
Six IGBTMOD™ U-Series Module
50 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
100
80
15
12
VGE = 20V
11
60
10
40
9
20
8
80
60
40
20
0
0
0
2
4
6
8
VGE = 15V
Tj = 25°C
Tj = 125°C
4
3
2
1
0
0
10
4
8
12
16
0
20
20
40
60
80
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
103
10
Tj = 25°C
IC = 50A
4
2
102
101
IC = 20A
4
8
12
16
100
1.0
20
2.0
2.5
3.0
3.5
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
td(off)
td(on)
tr
101
VCC = 600V
VGE = ±15V
RG = 6.3 Ω
Tj = 125°C
COLLECTOR CURRENT, IC, (AMPERES)
102
REVERSE RECOVERY TIME, trr, (ns)
tf
101
10-1
Cres
trr
101
Irr
101
EMITTER CURRENT, IE, (AMPERES)
101
102
GATE CHARGE, VGE
di/dt = -100A/µsec
Tj = 25°C
101
100
100
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
102
102
10-2
10-1
4.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
103
100
100
1.5
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
102
Coes
VGE = 0V
f = 1MHz
0
0
100
100
102
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
6
CAPACITANCE, Cies, Coes, Cres, (nF)
IC = 100A
Cies
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
8
100
101
Tj = 25°C
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
5
VCE = 10V
Tj = 25°C
Tj = 125°C
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
Tj = 25oC
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
100
SWITCHING TIME, (ns)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
IC = 50A
16
VCC = 400V
VCC = 600V
12
8
4
0
0
75
150
225
300
GATE CHARGE, QG, (nC)
95
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10-3
101
100
10-2
10-1
100
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.31°C/W
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
96
101
10-4
10-3
10-3
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
Zth = Rth • (NORMALIZED VALUE)
CM50TU-24H
Six IGBTMOD™ U-Series Module
50 Amperes/1200 Volts
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10-3
101
100
10-2
10-1
100
101
Single Pulse
TC = 25°C
Per Unit Base = Rth(j-c) = 0.7°C/W
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3
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