CM50TU-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six IGBTMOD™ U-Series Module 50 Amperes/1200 Volts A B F G E S 4 - Mounting Holes G H E H E R K L GuP EuP C GuN EuN GvP EvP GwP EwP D TC Measured Point TC Measured Point M GwN EwN GvN EvN u v w K J E H N J E E H 5 - M4 NUTS 0.110 - 0.5 Tab P Q P GuP GvP GwP EuP EvP EwP U V W GuN GvN GwN EuN EvN EwN Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (135ns) Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking N Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 4.02 102.0 K 0.05 1.25 B 3.15±0.01 80.0±0.25 L 0.74 18.7 M 1.55 39.3 N 0.12 91.0 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM50TU-24H is a 1200V (VCES), 50 Ampere SixIGBT IGBTMOD™ Power Module. C 3.58 D 2.91±0.01 E 0.43 11.0 P 0.32 8.1 F 0.79 20.0 Q 1.02 26.0 G 0.39 10.0 R 0.47 11.85 Type Current Rating Amperes VCES Volts (x 50) H 0.75 19.1 S 0.22 Dia. 5.5 Dia. CM 50 24 J 0.79 20.0 74.0±0.25 3.05 93 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TU-24H Six IGBTMOD™ U-Series Module 50 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Symbol CM50TU-24H Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 50 Amperes ICM 100* Amperes IE 50 Amperes Peak Emitter Current** IEM 100* Amperes Maximum Collector Dissipation (Tj < 150°C) Pc 400 Watts Mounting Torque, M4 Main Terminal – 15 in-lb Mounting Torque, M5 Mounting – 31 in-lb – 570 Grams Viso 2500 Volts Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Voltage Symbol Test Conditions Min. Typ. Max. ICES VCE = VCES, VGE = 0V – – 1 – – 0.5 µA 4.5 6 7.5 Volts IGES VGE = VGES, VCE = 0V Gate-Emitter Threshold Voltage VGE(th) IC = 5mA, VCE = 10V Collector-Emitter Saturation Voltage VCE(sat) Units mA IC = 50A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts IC = 50A, VGE = 15V, Tj = 125°C – 2.85 – Volts Total Gate Charge QG VCC = 600V, IC = 50A, VGE = 15V – 187 Emitter-Collector Voltage* VEC IE = 50A, VGE = 0V – – 3.2 – nC Min. Typ. Max. Units – – 7.5 nf – – 2.6 nf – – 1.5 nf Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) VCC = 600V, IC = 50A, – – 80 ns Load Rise Time tr VGE1 = VGE2 = 15V, – – 200 ns Switch Turn-off Delay Time Times Fall Time VCE = 10V, VGE = 0V td(off) RG = 6.3V, Resistive – – 150 ns tf Load Switching Operation – – 350 ns Diode Reverse Recovery Time trr IE = 50A, diE/dt = -100A/µs – – 300 ns Diode Reverse Recovery Charge Qrr IE = 50A, diE/dt = -100A/µs – 0.28 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/6 Module – – 0.31 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per Free-Wheel Diode 1/6 Module – – 0.7 °C/W Rth(c-f) Per Module, Thermal Grease Applied – 0.018 – °C/W Contact Thermal Resistance 94 Max. Units Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TU-24H Six IGBTMOD™ U-Series Module 50 Amperes/1200 Volts OUTPUT CHARACTERISTICS (TYPICAL) 100 80 15 12 VGE = 20V 11 60 10 40 9 20 8 80 60 40 20 0 0 0 2 4 6 8 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 0 10 4 8 12 16 0 20 20 40 60 80 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 10 Tj = 25°C IC = 50A 4 2 102 101 IC = 20A 4 8 12 16 100 1.0 20 2.0 2.5 3.0 3.5 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 td(off) td(on) tr 101 VCC = 600V VGE = ±15V RG = 6.3 Ω Tj = 125°C COLLECTOR CURRENT, IC, (AMPERES) 102 REVERSE RECOVERY TIME, trr, (ns) tf 101 10-1 Cres trr 101 Irr 101 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE di/dt = -100A/µsec Tj = 25°C 101 100 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 102 10-2 10-1 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 103 100 100 1.5 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 102 Coes VGE = 0V f = 1MHz 0 0 100 100 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 6 CAPACITANCE, Cies, Coes, Cres, (nF) IC = 100A Cies REVERSE RECOVERY CURRENT, Irr, (AMPERES) 8 100 101 Tj = 25°C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 100 SWITCHING TIME, (ns) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 50A 16 VCC = 400V VCC = 600V 12 8 4 0 0 75 150 225 300 GATE CHARGE, QG, (nC) 95 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 101 100 10-2 10-1 100 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.31°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 96 101 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) CM50TU-24H Six IGBTMOD™ U-Series Module 50 Amperes/1200 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.7°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3