Cymbet CBC3150-D9C Enerchip cc with integrated power management Datasheet

EnerChip™ CC CBC3150
EnerChip CC with Integrated Power Management
Features
•
•
•
•
•
•
•
•
•
•
•
Power Manager with Charge Control
Integrated 50µAh Thin Film Energy Storage
Built-in Energy Storage Protection
Temperature Compensated Charge Control
Adjustable Switchover Voltage
Charges Integrated EnerChip Over a Wide Supply
Range
Low Standby Power
SMT - Solder Reflow Tolerant
Thousands of Recharge Cycles
Low Self-Discharge
Eco-Friendly, RoHS Compliant
Applications
•
•
•
•
•
•
•
Standby supply for non-volatile SRAM, Real-time
clocks, controllers, supply supervisors, and other
system-critical components.
Wireless sensors and RFID tags and other
powered, low duty cycle applications.
Localized power source to keep microcontrollers
and other devices alert in standby mode.
Power bridging to provide back-up power to
system during exchange of main batteries.
Consumer appliances that have real-time
clocks; provides switchover power from main
supply to integrated backup energy storage.
Business and industrial systems such as:
network routers, point-of-sale terminals, singleboard computers, test equipment, multi-function
printers, industrial controllers, and utility meters.
Energy Harvesting by coupling the EnerChip
with energy transducers such as solar panels.
9 mm x 9 mm
DFN SMT Package
The EnerChip CC is the world’s first Intelligent Thin
Film Energy Storage Device. It is an integrated
solution that provides backup energy storage and
power management for systems requiring power
bridging and/or secondary power. The EnerChip CC is
essentially a UPS in a Chip™ drop in solution.
During normal operation, the EnerChip CC charges
itself with a controlled voltage using an internal
charge pump that operates from 2.5V to 5.5V. An
ENABLE pin allows for activation and deactivation
of the charge pump using an external control line
in order to minimize current consumption and take
advantage of the fast recharge time of the EnerChip.
When the primary power supply dips below a userdefined threshold voltage, the EnerChip CC will signal
this event and route the EnerChip voltage to VOUT.
The EnerChip CC also has energy storage protection
circuitry to enable thousands of recharge cycles.
The CBC3150 is a 20-pin, 9 mm x 9 mm Dual Flat Nolead (DFN) package, available in tubes, trays, or tapeand-reel for use with automatic insertion equipment.
Figure 1 - Typical EnerChip CC
Application Circuit
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DS-72-03 Rev F
Page 1 of 16
EnerChip CC CBC3150
Electrical Properties
EnerChip Backup Output voltage:
Energy Capacity (typical):
Recharge time to 80%:
Charge/Discharge cycles:
Physical Properties
Package size:
Operating temperature:
Storage temperature:
3.3V
50µAh
20 minutes
>5000 to 10% discharge
9 mm x 9 mm
-20°C to +70°C
-40°C to +125°C (before 1st charge)
Functional Block Diagram
The EnerChip CC internal schematic is shown in Figure 2. The input voltage from the power supply (VDD) is
applied to the charge pump, the control logic, and is compared to the user-set threshold as determined by the
voltage on VMODE. VMODE is an analog input ranging from 0V to VDD. The ENABLE pin is a digital input that turns
off the charge pump when low. VOUT is either supplied from VDD or the integrated EnerChip energy storage
device. RESET is a digital output that, when low, indicates VOUT is being sourced by the integrated EnerChip.
CFLY is the flying capacitor in the voltage doubler circuit. The value of CFLY can be changed if the output
impedance of the EnerChip CC needs to be modified. The output impedance is dictated by 1/fC, where f is the
frequency of oscillation (typically 100kHz) and C is the capacitor value (typically 0.1µF). GND is system ground.
Figure 2: EnerChip CC CBC3150 Internal Block Diagram
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DS-72-03 Rev F
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EnerChip CC CBC3150
Device Input/Ouput Descriptions
Pin Number
Label
Description
1
VBAT
Positive EnerChip Terminal - Tie to Pin 4
2
VOUT
System Voltage
3
VDD
Input Voltage
4
VCHG
EnerChip Charge Voltage - Tie to Pin 1 and/or Optional
EnerChip(s)
5
ENABLE
Charge Pump Enable
6
VMODE
Mode Select for Backup Switchover Threshold
7
GND
System Ground
8
RESET
Reset Signal (Active Low)
9
CP
Flying Capacitor Positive
10
CN
Flying Capacitor Negative
11
NC
No Connection
12
NC
No Connection
13
NC
No Connection
14
GND
System Ground
15
NC
No Connection
16
NC
No Connection
17
NC
No Connection
18
NC
No Connection
19
NC
No Connection
20
NC
No Connection
NC
NC
NC
VCHG
NC
ENABLE
NC
NC
GND
RESET
NC
CP
NC
CN
NC
Figure 3: EnerChip CC CBC3150 Package Pin-out
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DS-72-03 Rev F
Page 3 of 16
EnerChip CC CBC3150
Absolute Maximum Ratings
PARAMETER
CONDITION
MIN
TYPICAL
MAX
UNITS
VDD with respect to GND
25°C
GND - 0.3
-
6.0
V
ENABLE and VMODE Input Voltage
25°C
GND - 0.3
-
VDD+0.3
V
VBAT
25°C
3.0
-
4.15
V
VCHG (1)
25°C
3.0
-
4.15
V
VOUT
25°C
GND-0.3
-
6.0
V
RESET Output Voltage
25°C
GND - 0.3
-
VOUT+0.3
V
CP, Flying Capacitor Voltage
25°C
GND - 0.3
-
6.0
V
CN
25°C
GND - 0.3
-
VDD+0.3
V
(1)
(1)
No external connections to these pins are allowed, except parallel EnerChips.
Operating Characteristics
CONDITION
MIN
TYPICAL
MAX
UNITS
Output Voltage VOUT
PARAMETER
VDD > VTH
-
VDD
-
V
Output Voltage VOUT (backup mode)
VDD < VTH
2.2
3.3
3.6
V
EnerChip Pulse Discharge Current
Self-Discharge (5-yr. average; 25°C)
-
Variable - see App. Note 1025
Non-recoverable
-
2.5
-
% per year
Recoverable
-
1.5 (1)
-
% per year
25
+70
Operating Temperature
-
Storage Temperature
-
-40
-
Cell Resistance (25°C)
Recharge Cycles
(to 80% of rated capacity; 4.1 V charge
voltage)
25°C
40°C
Recharge Time (to 80% of rated capacity; 4.1V charge voltage; 25°C)
Capacity
-
-40
(2)
+125
°C
(3)
°C
Charge cycle 2
-
500
1250
Charge cycle 1000
-
2250
5000
10% depth-of-discharge
5000
-
-
cycles
50% depth-of discharge
1000
-
-
cycles
10% depth-of-discharge
2500
-
-
cycles
50% depth-of-discharge
500
-
-
cycles
Charge cycle 2
-
20
35
Charge cycle 1000
-
60
95
100µA discharge; 25°C
50
-
-
(1)
First month recoverable self-discharge is 4% average.
(2)
Cell resistance and charging time increase with decreasing temperature.
(3)
Storage temperature is for EnerChip CC device before 1st charge is applied.
Ω
minutes
µAh
Note: All specifications contained within this document are subject to change without notice.
©2009-2013 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-03 Rev F
Page 4 of 16
EnerChip CC CBC3150
EnerChip Charging Characteristics
The EnerChip can be recharged quickly. The following graphs illustrate the correlation between charging time
and charging current into a discharged cell, and also the cumulative charge vs. charging time. Both graphs are
typical based on constant 4.1V charging at room temperature. Charging time increases at lower temperature.
EnerChip Temperature Characteristics
EnerChip cell resistance increases (decreases) with decreasing (increasing) temperature. The following graph
represents typical cell resistance over the rated operating temperature range.
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DS-72-03 Rev F
Page 5 of 16
EnerChip CC CBC3150
POWER SUPPLY CURRENT CHARACTERISTICS
Ta = -20ºC to +70ºC
CHARACTERISTIC
SYMBOL
CONDITION
ENABLE=GND
Quiescent Current
IQ
ENABLE=VDD
MIN
MAX
UNITS
VDD=3.3V
-
3.5
µA
VDD=5.5V
-
6.0
µA
VDD=3.3V
-
35
µA
VDD=5.5V
-
38
µA
IQBATOFF
VBAT < VBATCO,
VOUT=0
-
0.5
nA
IQBATON
VBAT > VBATCO,
ENABLE=VDD, IOUT=0
-
42
nA
EnerChip Cutoff Current
INTERFACE LOGIC SIGNAL CHARACTERISTICS
VDD = 2.5V to 5.5V, Ta = -20ºC to +70ºC
CHARACTERISTIC
SYMBOL
CONDITION
MIN
MAX
UNITS
High Level Input Voltage
VIH
-
VDD - 0.5
-
Volts
Low Level Input Voltage
VIL
-
-
0.5
Volts
High Level Output Voltage
VOH
VDD>VTH (see Figures 4
and 5) IL=10µA
VDD 0.04V (1)
-
Volts
Low Level Output Voltage
VOL
IL = -100µA
-
0.3
Volts
Logic Input Leakage Current
IIN
0<VIN<VDD
-1.0
+1.0
nA
(1)
RESET tracks VDD; RESET = VDD - (IOUT x ROUT).
RESET SIGNAL AC/DC CHARACTERISTICS
VDD = 2.5V to 5.5V, Ta = -20ºC to +70ºC
CHARACTERISTIC
SYMBOL
CONDITION
MIN
MAX
UNITS
VDD Rising to RESET
Rising
tRESETH
VDD rising from 2.8V TO 3.1V
in <10µs
60
200
ms
VDD Falling to RESET
Falling
tRESETL
VDD falling from 3.1V to 2.8V
in <100ns
0.5
2
µs
Mode 1 TRIP V
VDD Rising
VRESET
VMODE = GND
2.80
3.20
V
Mode 2 TRIP V (2)
VDD Rising
VRESET
VMODE = VDD/2
2.25
2.60
V
VMODE=VDD
60
100
VMODE=GND
45
75
VMODE = VDD/2
30
50
RESET Hysteresis
Voltage (3)
(VDD to RESET)
VHYST
mV
(2)
User-selectable trip voltage can be set by placing a resistor divider from the VMODE pin to GND. Refer to Figure 8.
(3)
The hysteresis is a function of trip level in Mode 2. Refer to Figure 9.
©2009-2013 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-03 Rev F
Page 6 of 16
EnerChip CC CBC3150
CHARGE PUMP CHARACTERISTICS
VDD = 2.5V to 5.5V, Ta = -20ºC to +70ºC
CHARACTERISTIC
SYMBOL
ENABLE=VDD to Charge
Pump Active
tCPON
ENABLE Falling to
Charge Pump Inactive
tCPOFF
CONDITION
MIN
MAX
UNITS
60
80
µs
0
1
µs
-
120
KHz (1)
150
300
Ω
ENABLE to 3rd charge pump
pulse, VDD=3.3V
-
Charge Pump Frequency
fCP
Charge Pump
Resistance
RCP
Delta VBAT, for IBAT charging
current of 1µA to 100µA
CFLY=0.1µF, CBAT=1.0µF
VCHG Output Voltage
VCP
CFLY=0.1µF, CBAT=1.0µF,
IOUT=1µA, Temp=+25ºC
4.075
4.125
V
VCHG Temp. Coefficient
TCCP
IOUT=1µA, Temp=+25ºC
-2.0
-2.4
mV/ºC
ICP
IBAT=1mA
CFLY=0.1µF, CBAT=1.0µF
1.0
-
mA
ENABLE=VDD
2.5
-
V
Charge Pump Current
Drive
Charge Pump on Voltage
(1)
VENABLE
fCP = 1/tCPPER
ADDITIONAL CHARACTERISTICS
Ta = -20ºC to +70ºC
CHARACTERISTIC
VBAT Cutoff Threshold
SYMBOL
VBATCO
CONDITION
IOUT=1µA
LIMITS
UNITS
MIN
MAX
2.75
3.25
V
+1
+2
mV/ºC
Cutoff Temp. Coefficient
TCCO
VBAT Cutoff Delay Time
tCOOFF
VBAT from 40mV above to
20mV below VBATCO
IOUT=1µA
40
-
ms
VOUT Dead Time, VDD
Rising (2)
tRSBR
IOUT=1mA
VBAT=4.1V
0.2
2.0
µs
VOUT Dead Time, VDD
Falling (2)
tRSBF
VBAT=4.1V
0.2
2.0
µs
Bypass Resistance
ROUT
-
2.5
Ω
(2)
-
-
Dead time is the time period when the VOUT pin is floating. Size the holding capacitor accordingly.
Note: All specifications contained within this document are subject to change without notice
©2009-2013 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-03 Rev F
Page 7 of 16
EnerChip CC CBC3150
Important timing diagrams for the EnerChip CC relationship between EnerChip Switchover Timing and
EnerChip Disconnect from Load Timing are shown in Figure 4.
Vreset
Figure 4: EnerChip CC Switchover and Disconnect Timing Diagrams
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DS-72-03 Rev F
Page 8 of 16
EnerChip CC CBC3150
Timing diagrams for the EnerChip CC relationship between VDD to RESET and ENABLE high to charge pump
becoming active are shown in Figure 5.
Figure 5: Timing Diagrams for VDD to RESET and Enable to Charge Pump Active.
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DS-72-03 Rev F
Page 9 of 16
EnerChip CC CBC3150
EnerChip CC Detailed Description
The EnerChip CC uses a charge pump to generate the supply voltage for charging the integrated energy storage
device. An internal FET switch with low RDSON is used to route VDD to VOUT during normal operation when main
power is above the switchover threshold voltage. When VDD is below the switchover threshold voltage, the
FET switch is shut off and VOUT is supplied by the EnerChip. An interrupt signal is asserted low prior to the
switchover.
Operating Modes
The EnerChip CC can be operated from various power supplies such as a primary source or a non-rechargeable
battery. With the ENABLE pin asserted high, the charge pump is active and charges the integrated EnerChip.
The EnerChip CC will be 80% charged within 20 minutes. Due to the rapid recharge it is recommended that,
once the EnerChip CC is fully charged, the user de-assert the ENABLE pin (i.e., force low) to reduce power
consumption. A signal generated from the MCU could be used to enable and disable the EnerChip CC.
When controlling the ENABLE pin by way of an external controller - as opposed to fixing the ENABLE line to VDD
- ensure that the ENABLE pin is forced low by the controller anytime the RESET line is low, which occurs when
the switchover threshold voltage is reached and the device is placed in backup mode. Although the internal
charge pump is designed to operate below the threshold switchover level when the ENABLE line is active, it
is recommended that the ENABLE pin be forced low whenever RESET is low to ensure no parasitic loads are
placed on the EnerChip while in this mode. If ENABLE is high or floating while VDD is in an indeterminate
state, bias currents within the EnerChip CC could flow, placing a parasitic load on the EnerChip that could
dramatically reduce the effective backup operating time.
The EnerChip CC supports 2 operational modes as shown in Figures 6 and 7.
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DS-72-03 Rev F
Page 10 of 16
EnerChip CC CBC3150
Mode 1 Operation
For use in 3.3 volt systems. The VMODE pin should be tied directly to GND, as shown in Figure 6. This will set the
switchover threshold at approximately 3.0 volts.
Figure 6: CBC3150 Typical Circuit for Mode 1 Operation
Mode 2 Operation
Figure 7 shows the circuitry for user-selectable switchover threshold to a value between 2.5 and 5.0 volts. Use
Figure 8 to determine the value of R1. To determine the amount of hysteresis from the EnerChip switchover
threshold, use Figure 9.
Figure 7: CBC3150 Typical Circuit for Mode 2 Operation
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DS-72-03 Rev F
Page 11 of 16
EnerChip CC CBC3150
EnerChip charging and backup power switchover threshold for 2.5 to 5.5 volt operation is selected by changing
the value of R2 (see Figure 7). To determine the backup switchover point, set the value of R1 to 200kΩ and
choose the value of R2 according to Figure 8. For example, to set a 3.0V trip point: If R1=200 kΩ then R2 = R1
x 0.72 = 144kΩ. Figure 7 shows a Mode 2 circuit with standard value resistors of 200kΩ and 143kΩ.
Battery Switchover Threshold Voltage vs. R2/R1
Ratio
Switchover Threshold Voltage (Volts)
6
5
4
3
Trip point
2
1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
R2/R1 Ratio
Figure 8: Mode 2 Resistor Selection Graph
To determine the backup switchover hysteresis for Mode 2 operation, use Figure 9.
Hysteresis in Battery Switchover Threshold
Voltage vs. R2/R1 Ratio
0.09
0.08
Hysteresis (Volts)
0.07
0.06
0.05
Hysteresis
0.04
0.03
0.02
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1
R2/R1 Ratio
Figure 9: Mode 2 Hysteresis as a Function of R2/R1
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DS-72-03 Rev F
Page 12 of 16
EnerChip CC CBC3150
Real-Time Clock Application Circuit
The EnerChip CC as depicted in Figure 10 is a typical application circuit in a 3.3 volt system where backup and
power switchover circuitry for a real-time clock device is provided.
Figure 10: EnerChip CC Providing Real-Time Clock Backup Power
Adding Power and Energy Capacity with Parallel EnerChips
In some applications, additional energy storage capacity might be needed. The schematic in Figure 11 shows
how multiple EnerChips can be supported in parallel by a single EnerChip CC CBC3150. Note that CFLY should
be increased by 0.1µF for every additional EnerChip.
Figure 11: EnerChip CC Providing Power Management for Multiple EnerChips
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DS-72-03 Rev F
Page 13 of 16
EnerChip CC CBC3150
EnerChip CC CBC3150 PCB Layout Guidelines - Important Notice!
There are several PCB layout considerations that must be taken into account when using the CBC3150:
1. All capacitors should be placed as close as possible to the EnerChip CC. The flying capacitor connections
must be as short as possible and routed on the same layer the EnerChip CC is placed.
2. Power connections should be routed on the layer the EnerChip CC is placed.
3. A ground (GND) plane in the PCB should be used for optimal performance of the EnerChip CC.
4. Very low parasitic leakage currents from the VBAT pin to power, signal, and ground connections, can result
in unexpected drain of charge from the integrated power source. Maintain sufficient spacing of traces and
vias from the VBAT pin and any traces connected to the VBAT pin in order to eliminate parasitic leakage
currents that can arise from solder flux or contaminants on the PCB.
5. Pin 1 VBAT and Pin 4 VCHG must be tied together for proper operation.
6. There should be no traces, vias or connections under the CBC3150 exposed die pad.
7. When placing a silk screen on the PCB around the perimeter of the package, place the silk screen outside
of the package and all metal pads. Failure to observe this precaution can result in package cracking during
solder reflow due to the silk screen material interfering with the solder solidification process during cooling.
8. See Figure 12 for location and dimensions of metal pad placement on the PCB.
Important Note: Designers using EnerChips in their products should also download the EnerChip User Manual
Application Note AN-1026 found here: http://www.cymbet.com/products/datasheets-downloads.php.
Figure 12: Recommended PCB Layout for the CBC3150-D9C Package (Dimensions in mm)
Cymbet Logo
Lot Number
Part Number
Date Code
CBC3150
Labeling
Information
Placement
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DS-72-03 Rev F
Page 14 of 16
EnerChip CC CBC3150
CBC3150 9mm x 9mm DFN Package Drawing and Dimensions
Pin 1
Notes:
1.
2.
3.
4.
5.
6.
Dimensions in millimeters.
Package dimensions do not include mold flash, protrusions, burrs or metal
smearing.
Coplanarity applies to the exposed pad as well as the exposed terminals.
Maximum coplanarity shall be 0.08. Warpage shall not exceed 0.10.
Refer to JEDEC MO-229 outline.
Exposed metallized feature connected to die paddle.
There are 10 contact pads on two opposite sides and no contact pads on the
other two sides.
Handling EnerChips as MSL 3 Devices
EnerChip CBC050 devices are rated Moisture Sensitivity Level 3 and must be mounted and reflowed within 168
hours of being removed from the moisture barrier anti-static bag.
Soldering, Rework, and Electrical Test
Refer to the Cymbet User Manual AN-1026 for soldering, rework, and replacement of the EnerChip on printed
circuit boards, and for instructions on in-circuit electrical testing of the EnerChip.
©2009-2013 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-03 Rev F
Page 15 of 16
EnerChip CC CBC3150
Energy Harvesting with the EnerChip CC
The EnerChip CC can be configured to collect energy from transducers such as low power photovoltaic (PV)
cells and use that harvested energy to charge the integrated EnerChip and deliver self-sustaining power to
components such as microcontrollers, sensors, and radios in wireless systems. The schematic of Figure 13
illustrates the feedback connection made from RESET to EN to implement the energy harvesting function with
the CBC3150. In order to make most efficient use of the power available from the transducer (for example,
a PV cell), it is necessary to know the electrical characteristics including voltage and peak power point of the
transducer being used. For assistance in designing your system to effectively harvest energy from a power
transducer in a specific environment, contact Cymbet Applications Engineering.
Figure 13: Implementing Energy Harvesting with the EnerChip CC
Ordering Information
EnerChip CC Part Number
Description
Notes
CBC3150-D9C
EnerChip CC 50µAh in 20-pin D9
DFN Package
Shipped in Tube
CBC3150-D9C-TR1
CBC3150-D9C-TR5
EnerChip CC 50µAh in 20-pin D9
DFN Package
Tape-and-Reel - 1000 pcs (TR1) or
5000 pcs (TR5) per reel
CBC3150-D9C-WP
EnerChip CC 50µAh in 20-pin D9
DFN Package
Waffle Pack
U.S. Patent No. 8,044,508. Additional U.S. and Foreign Patents Pending
Disclaimer of Warranties; As Is
The information provided in this data sheet is provided “As Is” and Cymbet Corporation disclaims all representations or warranties of any
kind, express or implied, relating to this data sheet and the Cymbet EnerChip product described herein, including without limitation, the
implied warranties of merchantability, fitness for a particular purpose, non-infringement, title, or any warranties arising out of course of
dealing, course of performance, or usage of trade. Cymbet EnerChip products are not authorized for use in life critical applications. Users
shall confirm suitability of the Cymbet EnerChip product in any products or applications in which the Cymbet EnerChip product is adopted
for use and are solely responsible for all legal, regulatory, and safety-related requirements concerning their products and applications and
any use of the Cymbet EnerChip product described herein in any such product or applications.
Cymbet, the Cymbet Logo, and EnerChip are Cymbet Corporation Trademarks
©2009-2013 Cymbet Corporation • Tel: +1-763-633-1780 • www.cymbet.com
DS-72-03 Rev F
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