ZP DMN3404LQ-7 N-channel enhancement mode mosfet Datasheet

DMN3404L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V(BR)DSS
RDS(ON) max
30V
28mΩ @ VGS = 10V
42mΩ @ VGS = 4.5V
82mΩ @ VGS = 3V
ID max
TA = +25°C
5.8A
4.8A
2.0A
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it

Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
ideal for high efficiency power management applications.

Case: SOT23

Applications
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0

Battery Charging

Moisture Sensitivity: Level 1 per J-STD-020

Power Management Functions


DC-DC Converters
Terminals: Finish  Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3

Portable Power Adaptors

Terminals Connections: See Diagram Below

Weight: 0.008 grams (approximate)
Drain
D
Gate
S
G
Source
Top View
Top View
Internal Schematic
Ordering Information (Note 4 & 5)
Part Number
DMN3404L-7
DMN3404LQ-7
Notes:
Compliance
Standard
Automotive
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
34N
Date Code Key
Year
Code
Month
Code
[email protected]
2009
W
Jan
1
2010
X
Feb
2
Mar
3
YM
Marking Information
34N = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
2011
Y
Apr
4
May
5
2012
Z
Jun
6
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2013
A
Jul
7
Aug
8
2014
B
Sep
9
Oct
O
2015
C
Nov
N
Dec
D
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DMN3404L
N-CHANNEL ENHANCEMENT MODE MOSFET
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage (Note 6 & 7)
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
Continuous Drain Current (Note 7) VGS = 10V
Steady
State
Continuous Drain Current (Note 7) VGS = 4.5V
Steady
State
Continuous Drain Current (Note 7) VGS = 3V
Steady
State
Pulsed Drain Current
Symbol
VDSS
VGSS
TA = -40°C
TA = +25°C
TA = +85°C
TA = -40°C
TA = +25°C
TA = +85°C
TA = -40°C
TA = +25°C
TA = +85°C
TA = -40°C
TA = +25°C
TA = +85°C
ID
Value
30
±20
4.6
4.2
3.0
Units
V
V
A
ID
6.2
5.8
4.0
A
ID
5.2
4.8
3.2
A
ID
2.2
2.0
1.0
A
IDM
30
A
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
0.72
173
1.4
90
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @TA = +25°C
Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient @TA = +25°C
Operating and Storage Temperature Range
Notes:
3. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
4. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
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DMN3404L
N-CHANNEL ENHANCEMENT MODE MOSFET
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8 )
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
30
—
—
—
—
—
—
1.0
±100
V
μA
nA
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
Static Drain-Source On-Resistance TJ = -40°C (Note 9)
RDS(ON)
RDS(ON)
Static Drain-Source On-Resistance TJ = +85°C (Note 9)
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 3V)
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
RDS(ON)
|Yfs|
VSD
1.5
23
57
24
33
63
71
10
0.75
2.0
27
74
28
42
82
95
—
1.0
V
—
—
Static Drain-Source On-Resistance TJ = +25°C
1.0
—
—
—
—
—
—
—
—
mΩ
S
V
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 4.8A
VGS=3V, ID =2A
VGS = 10V, ID = 5.8A
VGS = 4.5V, ID = 4.8A
VGS=3V, ID =2A
VGS=3V, ID =2A
VDS = 5V, ID = 5.8A
VGS = 0V, IS = 1A
Ciss
Coss
Crss
Rg
Qg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
—
—
—
—
—
—
—
—
—
—
—
—
—
498
52
45
1.75
3.8
5.3
11.3
1.4
2.1
3.41
6.18
13.92
2.84
—
—
—
2.8
5.3
7.5
16
—
—
10
13
28
10
pF
pF
pF
Ω
nC
nC
nC
nC
nC
ns
ns
ns
ns
Notes:
mΩ
Test Condition
VDS = 15V, VGS = 0V, f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 3V, VDS = 15V, ID = 1A
VGS = 10V/4.5V, VDS = 15V,
ID = 5.8A
VDD = 15V, VGS = 10V,
RL = 2.6Ω, RG = 3Ω
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design and 25°C data. Not subject to production testing
7. Guaranteed by design. Not subject to production testing.
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