INCHANGE Semiconductor Product Specification isc Silicon NPN Power Transistor BU608D DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed: tf= 0.5μs(Max) ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 6A APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEV Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current 4 A PC Collector Power Dissipation @ TC=25℃ 90 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU608D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A 1.5 V hFE DC Current Gain IC= 2A; VCE= 5V; ICEV Collector Cutoff Current VCE= 400V; VBE= -1.5V 15 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 400 mA Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V, ftest= 1MHz C-E Diode Forward Voltage IF= 5A 1.5 V Fall Time IC= 6A; IB1= -IB2= 1.2A, VCC= 40V 0.5 μs fT VECF tf isc Website：www.iscsemi.cn CONDITIONS MIN TYP. 200 UNIT V B B 2 MAX 15 10 MHz