BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Cascadable 50 -gain block 4 Unconditionally stable Gain |S21|2 = 13 dB at 1.8 GHz IP3out = +13 dBm at 1.8 GHz 2 (VD = 3 V, ID = typ. 6.7 mA) Noise figure NF = 2.3 dB at 1.8 GHz 1 Reverse isolation > 28 dB and VPS05605 VD return loss IN / OUT > 12 dB at 1.8 GHz 4 3 OUT Circuit Diagram IN 1 2 GND EHA07385 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BGA420 BLs 1, IN Pin Configuration Package 2, GND 3, OUT 4, VD SOT343 Maximum Ratings Parameter Symbol Value Unit Device current ID 15 mA Device voltage VD 6 V Total power dissipation Ptot 90 mW RF input power PRFin 0 dBm Junction temperature Tj 150 Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 TS = 110 °C °C Thermal Resistance Junction - soldering point1) RthJS 410 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jan-29-2002 BGA420 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Symbol Parameter Values Unit min. typ. max. 5.4 6.7 8 AC characteristics VD = 3 V, Zo = 50 Device current ID Insertion power gain f = 0.1 GHz f = 1 GHz f = 1.8 GHz |S21|2 Reverse isolation f = 1.8 GHz S12 Noise figure f = 0.1 GHz f = 1 GHz f = 1.8 GHz NF Intercept point at the output f = 1 GHz 1dB compression point f = 1 GHz Return loss input f = 1.8 GHz Return loss output f = 1.8 GHz mA dB 17 15 11 25 19 17 13 28 - IP3out 10 1.9 2.2 2.3 13 2.3 2.6 2.7 - P-1dB -6 -2.5 - RLin 8 11 - RLout 12 16 - dBm dB Typical biasing configuration +VD 100 pF RF OUT 100 pF 10 nF 4 3 BGA 420 1 100 pF 2 GND RF IN EHA07386 Note: 1) Large-value capacitors should be connected from pin 4 to ground right at the device to provide a low impedance path. 2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin boards are recommended to minimize the parasitic inductance to ground. 2 Jan-29-2002 BGA420 Typical S-Parameters at TA = 25 °C f S11 GHz MAG S21 ANG VD = 3 V, Zo = 50 0.1 0.5686 -8.5 0.5 0.5066 -19.2 0.8 0.4404 -28.7 1 0.3904 -34.6 1.5 0.2841 -50.5 1.8 0.2343 -60.6 1.9 0.2136 -64.1 2 0.2062 -68.4 2.4 0.1688 -89.7 3 0.1558 -104.9 S12 S22 MAG ANG MAG ANG MAG ANG 9.314 8.393 7.352 6.69 5.244 4.567 4.355 4.165 3.417 2.861 170.6 149.4 135.2 126.8 111.1 104 102 99.7 91.7 85.3 0.0268 0.0248 0.0236 0.024 0.0314 0.0378 0.0406 0.0426 0.0549 0.0682 12.7 11.7 25.6 35.9 57.2 63.5 66.1 67.2 71.4 73.1 0.2808 0.2613 0.2361 0.2144 0.1398 0.0979 0.0838 0.0689 0.0224 0.0284 -8.6 -3.8 -6.7 -9 -15 -18.2 -21.5 -22.2 -48 -147.5 Spice-model BGA 420 +V BGA 420-chip including parasitics T1 R1 14 R2 R2 13 R1 IN OUT R3 C1 11 C P3 T1 C P1 C P4 C P2 12 GND T501 14.5k 140 R3 2.4k C1 2.3pF CP1 0.2pF CP2 0.2pF CP3 0.6pF CP4 0.1pF EHA07387 3 Jan-29-2002 BGA420 Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) : IS = 0.21024 fA BF = 83.23 - NF = 1.0405 - VAF = 39.251 V IKF = 0.16493 A ISE = 15.761 fA NE = 1.7763 - BR = 10.526 - NR = 0.96647 - VAR = 34.368 V IKR = 0.25052 A ISC = 0.037223 fA NC = 1.3152 - RB = 15 IRB = 0.21215 A RBM = 1.3491 RE = 1.9289 RC = 0.12691 CJE = 3.7265 fF VJE = 0.70367 V MJE = 0.37747 - TF = 4.5899 ps XTF = 0.3641 - VTF = 0.19762 V ITF = 1.3364 mA PTF = 0 deg CJC = 96.941 fF VJC = 0.99532 V MJC = 0.48652 - XCJC = 0.08161 - TR = 1.4935 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.99469 - TNOM 300 K - RS = 20 LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = C1 = C2 = C3 = L1 = L2 = 0.36 0.4 0.3 0.15 0.36 0.4 95 6 132 28 88 8 0.6 0.4 nH nH nH nH nH nH fF fF fF fF fF fF nH nH C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) : 2 IS = fA 1.02 N= All parameters are ready to use, no scaling is necessary Package Equivalent Circuit: L2 +V C1 C3 L1 C CB C2 14 L BO L BI IN 11 BGA 420 Chip 12 C BE 13 L CI L CO OUT C’-E’Diode C CE L EI L EO GND EHA07388 Valid up to 3GHz Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Jan-29-2002 BGA420 Insertion power gain |S21|2 = f (f) Insertion power gain |S21| 2 = f (f) VD = 3 V VD, ID = parameter TA = parameter 25 22 VD=5V, ID=12.4mA VD=4V, ID=9.4mA VD=3V, ID=6.4mA VD=2V, ID=3,4mA TA=-20°C TA=+25°C TA=+75°C 18 |S 21|2 |S 21|2 dB dB 15 16 14 12 10 10 8 6 5 4 2 0 -1 10 10 0 GHz 10 0 -1 10 1 10 0 GHz f 10 1 10 1 f Noise figure NF = f (f) Noise figure NF = f (f) VD = 3V VD,ID = parameter TA = parameter 5 3.5 dB dB 2.5 NF NF VD=5V, ID=12.4mA VD=3V, ID=6.4mA TA=+75°C TA=+25°C TA=-20°C 3 2.0 1.5 2 1.0 1 0.5 0 -1 10 10 0 GHz 10 0.0 -1 10 1 f 10 0 GHz f 5 Jan-29-2002 BGA420 Intercept point at the output Intercept point at the output IP3out = f (f) IP3out = f (f), VD = 3V VD,ID = parameter TA = parameter 20 dBm 16 12 VD=5V, ID=12.4mA VD=4V, ID=9.4mA VD=3V, ID=6.4mA VD=2V, ID=3.4mA dBm 10 IP 3out IP 3out 9 14 12 8 7 10 6 8 5 TA=-20°C TA=+25°C TA=75°C 4 6 3 4 2 2 0 -1 10 1 10 0 GHz 10 0 -1 10 1 f 10 0 GHz 10 f 6 Jan-29-2002 1