n-Channel Power MOSFET OptiMOS™ BSB056N10NN3 G Data Sheet 2.3, 2011-02-28 Final Industrial & Multimarket OptiMOS™ Power-MOSFET BSB056N10NN3 G 1 Description OptiMOS™100V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 100V the best choice forthe demanding requirements of voltage regulator solutions in Solar, Drives, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. OptiMOS™ products are available in high performance packages to tackle your most challenging applications giving full flexibility in optimizing space- efficiency and cost. Features • • • • • • • • • Optimized for high switching frequency DC/DC converter Excellent Qg x RDS(on) product (FOM) Very low on-resistance RDS(on) Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Double sided cooling Compatible with DirectFET® package MN footprint and outline1) Low parasitic inductance Low profile (<0.7 mm) Applications • • • • Synchronous rectification Primary side switches Power management for high performance computing High power density point of load converters Table 1 Key Performance Parameters Parameter Value Unit Related Links VDS 100 V IFX OptiMOS webpage RDS(on),max 5.6 mΩ IFX OptiMOS product brief ID 83 A IFX OptiMOS spice models QOSS 73 nC IFX Design tools Qg.typ 56 Type Package Marking BSB056N10NN3 G MG-WDSON-2 0110 1) DirectFET ® is a trademark of International Rectifier Corporation. BSB056N10NN3G uses DirectFET ® technology licensed from International Rectifier Corporation Final Data Sheet 1 2.3, 2011-02-28 OptiMOS™ Power-MOSFET BSB056N10NN3 G 2 Maximum ratings at Tj = 25 °C, unless otherwise specified. Table 2 Maximum ratings Parameter Symbol Continuous drain current Values ID Min. Typ. Max. - - 83 Unit Note / Test Condition A VGS=10 V, TC=25 °C 52 VGS=10 V, TC=100 °C 9 VGS=10 V, TA=25 °C, RthJA=45 K/W)1) TC=25 °C Pulsed drain current2) ID,pulse - - 332 Avalanche energy, single pulse EAS - - 450 mJ Gate source voltage VGS -20 - 20 V Power dissipation Ptot - - 78 W Tj,Tstg -40 IEC climatic category; DIN IEC 68-1 - TC=25 °C TA=25 °C, RthJA=451) K/W 2.8 Operating and storage temperature ID=30 A,RGS=25 Ω 150 °C 55/150/56 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3 Thermal characteristics Table 3 Thermal characteristics Parameter Symbol Thermal resistance, junction - case RthJC Device on PCB RthJA Values Min. Typ. Max. - - 1.6 - - Unit Note / Test Condition K/W top 1 bottom 45 6 cm2 cooling area1) 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70µ, thick) copper area for drain conneciton. PCB is vertical in still air. Final Data Sheet 2 2.3, 2011-02-28 OptiMOS™ Power-MOSFET BSB056N10NN3 G Electrical characteristics 4 Electrical characteristics Electrical characteristics, at Tj=25 °C, unless otherwise specified. Table 4 Static characteristics Parameter Symbol Drain-source breakdown voltage V(BR)DSS Values Min. Typ. Max. 100 - - Unit Note / Test Condition V VGS=0 V, ID=1 mA Gate threshold voltage VGS(th) 2 2.7 3.5 Zero gate voltage drain current IDSS - 0.1 10 - 10 100 - 10 100 nA VGS=20 V, VDS=0 V - 5 5.6 mΩ VGS=10 V, ID=30A 6.2 8.1 - Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) Gate resistance RG - 0.5 Transconductance gfs 34 69 Table 5 VDS=VGS, ID=100 µA VDS=100V, VGS=0 V, Tj=25 °C µA VDS=100 V, VGS=0 V, Tj=125 °C VGS=6 V, ID=15A Ω S |VDS|>2|ID|RDS(on)max, ID=30 A Dynamic characteristics Parameter Symbol Values Min. Typ. Max. Input capacitance Ciss - 4100 5500 Output capacitance Coss - 750 1000 Reverse transfer capacitance Crss - 27 - Turn-on delay time td(on) - 15 - Rise time tr - 9 - Turn-off delay time td(off) - 25 - Fall time tf - 8 - Final Data Sheet 3 Unit Note / Test Condition pF VGS=0 V, VDS=50 V, f=1 MHz ns VDD=50V, VGS=10 V, ID=30 A, RG= 1.6 Ω 2.3, 2011-02-28 OptiMOS™ Power-MOSFET BSB056N10NN3 G Electrical characteristics Table 6 Gate charge characteristics1) Parameter Symbol Gate to source charge Qgs Values Min. Typ. Max. - 17 - Qgd Unit Note / Test Condition nC VDD=50 V, ID=30 A, VGS=0 to 10 V 9.7 Gate to drain charge Qsw - 20 - Switching charge Qg - 56 74 Gate charge total Vplateau - 4.2 - V Output charge Qoss 73 97 nC VDD=50 V, VGS=0 V Unit Note / Test Condition A TC=25 °C 1) See figure 16 for gate charge parameter definition Table 7 Reverse diode characteristics Parameter Symbol Values Min. Typ. Max. Diode continuous forward current Is 65 Diode pulse current IS,pulse 316 Diode forward voltage VSD - 0.9 1.2 V VGS=0 V, IF=IS, Tj=25 °C Reverse recovery charge Qrr - 174 - nC Reverse recovery time trr - 64 - ns VR=50V, IF=30A, diF/dt=100 A/µs Final Data Sheet 4 2.3, 2011-02-28 OptiMOS™ Power-MOSFET BSB056N10NN3 G Electrical characteristics diagrams 5 Electrical characteristics diagrams Table 8 1 Power dissipation 2 Drain current Ptot = f(TC) ID=f(TC); parameter:VGS Table 9 3 Safe operating area TC=25 °C ID=f(VDS); Tj=25 °C; D=0; parameter: Tp Final Data Sheet 4 Max. transient thermal impedance Z(thJC)=f(tp); parameter: D=tp/T 5 2.3, 2011-02-28 OptiMOS™ Power-MOSFET BSB056N10NN3 G Electrical characteristics diagrams Table 10 5 Typ. output characteristics TC=25 °C 6 Typ. drain-source on-state resistance ID=f(VDS); Tj=25 °C; parameter: VGS RDS(on)=f(ID); Tj=25 °C; parameter: VGS Table 11 7 Typ. transfer characteristics 8 Typ. forward transconductance ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C Final Data Sheet 6 2.3, 2011-02-28 OptiMOS™ Power-MOSFET BSB056N10NN3 G Electrical characteristics diagrams Table 12 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on)=f(Tj); ID=30 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS; Table 13 11 Typ. capacitances 12 Forward characteristics of reverse diode C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD); parameter: Tj Final Data Sheet 7 2.3, 2011-02-28 OptiMOS™ Power-MOSFET BSB056N10NN3 G Electrical characteristics diagrams Table 14 13 Avalanche characteristics 14 Typ. gate charge IAS=f(tAV); RGS=25 Ω; parameter: Tj(start) VGS=f(Qgate); ID=30 A pulsed; parameter: VDD Table 15 15 Drain-source breakdown voltage 16 Gate charge waveforms VBR(DSS)=f(Tj); ID=1 mA Final Data Sheet 8 2.3, 2011-02-28 OptiMOS™ Power-MOSFET BSB056N10NN3 G Package outlines 6 Package outlines Figure 1 Outlines MG-WDSON-2, dimensions in mm/inches Final Data Sheet 9 2.3, 2011-02-28 OptiMOS™ Power-MOSFET BSB056N10NN3 G Package outlines 7 Package outlines Figure 2 Outlines MG-WDSON-2, dimensions in mm/inches Final Data Sheet 10 2.3, 2011-02-28 OptiMOS™ Power-MOSFET BSB056N10NN3 G Package outlines 8 Package outlines Final Data Sheet 11 2.3, 2011-02-28 OptiMOS™ Power-MOSFET BSB056N10NN3 G Revision History 9 Revision History Revision History: 2011-02-28, 2.3 Previous Revision: Revision Subjects (major changes since last revision) 0.1 Release of target data sheet 2.0 Release of Final data sheet 2.3 Package outlines errata corrections We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Edition 2011-02-28 Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.. Final Data Sheet 12 2.3, 2011-02-28