AOSMD AO8822 20v common-drain dual n-channel mosfet Datasheet

AO8822
20V Common-Drain Dual N-Channel MOSFET
General Description
Product Summary
The AO8822 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V while retaining a 12V VGS(MAX)
rating. This device is suitable for use as a uni-directional
or bi-directional load switch, facilitated by its commondrain configuration.
VDS
20V
7A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 18mΩ
RDS(ON) (at VGS = 4.5V)
< 22mΩ
RDS(ON) (at VGS = 3.6V)
< 23mΩ
RDS(ON) (at VGS = 2.5V)
< 27mΩ
ESD Protected
Top View
TSSOP8
Bottom View
D1/D2
S1
1
2
3
4
S1
G1
8
7
6
5
D1/D2
S2
S2
G2
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Pulsed Drain Current C
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 6 : March 2011
Steady-State
Steady-State
±12
V
A
1.5
W
1
TJ, TSTG
Symbol
t ≤ 10s
Units
V
30
PD
TA=70°C
Maximum
20
6
IDM
TA=25°C
S
7
ID
TA=70°C
B
G
S
Pin 1
Continuous Drain
Current
D
D
RθJA
RθJL
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-55 to 150
Typ
63
101
64
°C
Max
83
130
83
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO8822
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±10V
BVGSO
Gate-Source Breakdown Voltage
VDS=0V, IG=±250µA
±12
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
VGS=10V, ID=7A
13
TJ=55°C
V
0.8
15
18
22
27
15
17
22
mΩ
16
18
23
mΩ
VGS=2.5V, ID=5.5A
18
21
27
mΩ
28
31
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
520
VGS=0V, VDS=10V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
mΩ
VGS=3.6V, ID=6A
VGS=1.8V, ID=2A
Output Capacitance
V
VGS=4.5V, ID=6.6A
VDS=5V, ID=7A
Reverse Transfer Capacitance
1
A
Forward Transconductance
Crss
µA
10
gFS
Coss
µA
5
TJ=125°C
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
20
VDS=20V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=10V, VDS=10V, ID=7A
650
mΩ
S
1
V
2
A
780
pF
140
pF
60
pF
12
15
18
nC
5
6.7
8
nC
VGS=10V, VDS=10V, RL=1.5Ω,
RGEN=3Ω
3.6
nC
3
nC
0.25
us
0.45
us
11
us
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=7A, dI/dt=500A/µs
8
10
12
Qrr
Body Diode Reverse Recovery Charge IF=7A, dI/dt=500A/µs
8
11
13.5
4
us
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 6 : March 2010
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Page 2 of 5
AO8822
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
20
10V
VDS=5V
3V
15
ID(A)
30
ID (A)
4V
VGS=2V
20
10
125°C
5
10
25°C
0
0
0
1
2
3
4
0
5
0.5
40
1.5
2
2.5
3
1.6
Normalized On-Resistance
VGS=1.8V
35
RDS(ON) (mΩ )
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
30
VGS=4.5V
25
VGS=2.5V
VGS=3.6V
20
15
VGS=3.6V
ID=6A
VGS=4.5V
ID=6.6A
1.4
17
VGS=2.5V
ID=5.5A
1.2
VGS=1.8V
5
ID=2A
VGS=10V
ID=7A
1
2
10
VGS=10V
0.8
10
0
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
60
1.0E+01
ID=7A
1.0E+00
50
40
125°C
40
IS (A)
RDS(ON) (mΩ )
1.0E-01
30
125°C
1.0E-02
25°C
1.0E-03
20
1.0E-04
25°C
1.0E-05
10
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 6 : March 2010
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AO8822
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
10
VDS=10V
ID=7A
800
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
600
400
Coss
2
200
0
0
0
4
8
12
Qg (nC)
Figure 7: Gate-Charge Characteristics
Crss
0
16
4
8
12
16
VDS (Volts)
Figure 8: Capacitance Characteristics
20
40
100.0
TA=25°C
10µs
RDS(ON)
limited
30
100µs
1ms
1.0
10ms
TJ(Max)=150°C
TA=25°C
0.1
Power (W)
ID (Amps)
10.0
20
10
10s
DC
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=83°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 6 : March 2010
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Page 4 of 5
AO8822
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D iode R ecovery T est C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
V ds -
Isd
V gs
Ig
Rev 6 : March 2010
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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Page 5 of 5
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