AO8822 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary The AO8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. VDS 20V 7A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 18mΩ RDS(ON) (at VGS = 4.5V) < 22mΩ RDS(ON) (at VGS = 3.6V) < 23mΩ RDS(ON) (at VGS = 2.5V) < 27mΩ ESD Protected Top View TSSOP8 Bottom View D1/D2 S1 1 2 3 4 S1 G1 8 7 6 5 D1/D2 S2 S2 G2 G Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Pulsed Drain Current C Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 6 : March 2011 Steady-State Steady-State ±12 V A 1.5 W 1 TJ, TSTG Symbol t ≤ 10s Units V 30 PD TA=70°C Maximum 20 6 IDM TA=25°C S 7 ID TA=70°C B G S Pin 1 Continuous Drain Current D D RθJA RθJL www.aosmd.com -55 to 150 Typ 63 101 64 °C Max 83 130 83 Units °C/W °C/W °C/W Page 1 of 5 AO8822 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±10V BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250µA ±12 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=10V, VDS=5V 30 VGS=10V, ID=7A 13 TJ=55°C V 0.8 15 18 22 27 15 17 22 mΩ 16 18 23 mΩ VGS=2.5V, ID=5.5A 18 21 27 mΩ 28 31 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance 520 VGS=0V, VDS=10V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime mΩ VGS=3.6V, ID=6A VGS=1.8V, ID=2A Output Capacitance V VGS=4.5V, ID=6.6A VDS=5V, ID=7A Reverse Transfer Capacitance 1 A Forward Transconductance Crss µA 10 gFS Coss µA 5 TJ=125°C Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 VDS=20V, VGS=0V IDSS RDS(ON) Typ VGS=10V, VDS=10V, ID=7A 650 mΩ S 1 V 2 A 780 pF 140 pF 60 pF 12 15 18 nC 5 6.7 8 nC VGS=10V, VDS=10V, RL=1.5Ω, RGEN=3Ω 3.6 nC 3 nC 0.25 us 0.45 us 11 us tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=7A, dI/dt=500A/µs 8 10 12 Qrr Body Diode Reverse Recovery Charge IF=7A, dI/dt=500A/µs 8 11 13.5 4 us ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 6 : March 2010 www.aosmd.com Page 2 of 5 AO8822 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 20 10V VDS=5V 3V 15 ID(A) 30 ID (A) 4V VGS=2V 20 10 125°C 5 10 25°C 0 0 0 1 2 3 4 0 5 0.5 40 1.5 2 2.5 3 1.6 Normalized On-Resistance VGS=1.8V 35 RDS(ON) (mΩ ) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 30 VGS=4.5V 25 VGS=2.5V VGS=3.6V 20 15 VGS=3.6V ID=6A VGS=4.5V ID=6.6A 1.4 17 VGS=2.5V ID=5.5A 1.2 VGS=1.8V 5 ID=2A VGS=10V ID=7A 1 2 10 VGS=10V 0.8 10 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 60 1.0E+01 ID=7A 1.0E+00 50 40 125°C 40 IS (A) RDS(ON) (mΩ ) 1.0E-01 30 125°C 1.0E-02 25°C 1.0E-03 20 1.0E-04 25°C 1.0E-05 10 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 6 : March 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO8822 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=10V ID=7A 800 Ciss Capacitance (pF) VGS (Volts) 8 6 4 600 400 Coss 2 200 0 0 0 4 8 12 Qg (nC) Figure 7: Gate-Charge Characteristics Crss 0 16 4 8 12 16 VDS (Volts) Figure 8: Capacitance Characteristics 20 40 100.0 TA=25°C 10µs RDS(ON) limited 30 100µs 1ms 1.0 10ms TJ(Max)=150°C TA=25°C 0.1 Power (W) ID (Amps) 10.0 20 10 10s DC 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 RθJA=83°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 6 : March 2010 www.aosmd.com Page 4 of 5 AO8822 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig Rev 6 : March 2010 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.aosmd.com Page 5 of 5