AVAGO ATF-34143 Low noise pseudomorphic hemt in a surface mount plastic package low noise figure Datasheet

ATF-35143
Low Noise Pseudomorphic HEMT
in a Surface Mount Plastic Package
Data Sheet
Description
Features
Avago’s ATF-35143 is a high dynamic range, low noise,
PHEMT housed in a 4-lead SC-70 (SOT-343) surface
mount plastic package.




Based on its featured performance, ATF-35143 is suitable
for applications in cellular and PCS base stations, LEO
systems, MMDS, and other systems requiring super low
noise figure with good intercept in the 450 MHz to 10
GHz frequency range.
Other PHEMT devices in this family are the ATF-34143
and the ATF-33143. The typical specifications for these
devices at 2 GHz are shown in the table below:
Surface Mount Package
SOT-343
Lead-free Option Available
Low Noise Figure
Excellent Uniformity in Product Specifications
Low Cost Surface Mount Small Plastic Package
SOT-343 (4 lead SC-70)
 Tape-and-Reel Packaging Option Available
Specifications
1.9 GHz; 2 V, 15 mA (Typ.)
 0.4 dB Noise Figure
 18 dB Associated Gain
 11 dBm Output Power at 1 dB Gain Compression
 21 dBm Output 3rd Order Intercept
Applications
 Low Noise Amplifier for Cellular/PCS Handsets
 LNA for WLAN, WLL/RLL, LEO, and MMDS Applications
 General Purpose Discrete PHEMT for Other Ultra Low
Noise Applications
DRAIN
SOURCE
5Px
Pin Connections and Package Marking
SOURCE
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
GATE
Note: Top View. Package marking provides
orientation and identification.
“5P” = Device code
“x” = Date code character. A new character
is assigned for each month, year.
Part No.
Gate Width
Bias Point
NF (dB)
Ga (dB)
OIP3 (dBm)
ATF-33143
1600 μ
4 V, 80 mA
0.5
15.0
33.5
ATF-34143
800 μ
4 V, 60 mA
0.5
17.5
31.5
ATF-35143
400 μ
2 V, 15 mA
0.4
18.0
21.0
ATF-35143 Absolute Maximum Ratings[1]
Symbol
Parameter
Drain - Source Voltage [2]
VDS
Source Voltage [2]
Units
Absolute
Maximum
V
5.5
VGS
Gate -
V
-5
VGD
Gate Drain Voltage [2]
V
-5
IDS
Current[2]
mA
Idss[3]
mW
300
Drain
Pdiss
Total Power
Dissipation[4]
RF Input Power
Pin max
Channel Temperature
TCH
dBm
14
°C
160
TSTG
Storage Temperature
°C
-65 to 160
jc
Thermal Resistance [5]
°C/W
150
Notes:
1. Operation of this device above any
one of these parameters may cause
permanent damage.
2. Assumes DC quiesent conditions.
3. VGS = 0 V
4. Source lead temperature is 25°C.
Derate 3.2 mW/°C for TL > 67°C.
5. Thermal resistance measured using
QFI Measurement method.
Product Consistency Distribution Charts [7, 8]
120
120
+0.6 V
100
100
80
IDS (mA)
Cpk = 1.73
Std = 0.35
80
0V
-3 Std
60
+3 Std
60
40
40
–0.6 V
20
20
0
0
2
4
VDS (V)
6
0
19
8
20
21
22
23
24
OIP3 (dBm)
Figure 1. Typical Pulsed I-V Curves[6].
(VGS = -0.2 V per step)
Figure 2. OIP3 @ 2 GHz, 2 V, 15 mA.
LSL=19.0, Nominal=20.9, USL=23.0
200
Cpk = 3.7
Std = 0.03
160
Cpk = 2.75
Std = 0.17
160
120
120
-3 Std
+3 Std
-3 Std
+3 Std
80
80
40
40
0
0.2
0.3
0.4
0.5
NF (dB)
Figure 3. NF @ 2 GHz, 2 V, 15 mA.
LSL=0.2, Nominal=0.37, USL=0.7
0.6
0.7
0
16
17
18
19
20
GAIN (dB)
Figure 4. Gain @ 2 GHz, 2 V, 15 mA.
LSL=16.5, Nominal=18.0, USL=19.5
Notes:
6. Under large signal conditions, VGS may swing positive and the drain current may exceed Idss. These conditions are acceptable as long as the
maximum Pdiss and Pin max ratings are not exceeded.
7. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits.
8. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match
based on production test requirements. Circuit losses have been de-embedded from actual measurements.
2
ATF-35143 Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameters and Test Conditions
Idss
[1]
VP [1]
Id
gm[1]
Saturated Drain Current
VDS = 1.5 V, IDS = 10% of Idss
Quiescent Bias Current
VGS = 0.45 V, VDS = 2 V
Transconductance
Gate to Drain Leakage Current
Igss
Gate Leakage Current
Ga
VDS = 1.5 V, VGS = 0 V
Pinchoff Voltage
IGDO
NF
Units
Noise Figure[3]
Associated Gain[3]
OIP3
Output 3rd Order
Intercept Point [4, 5]
P1dB
1 dB Compressed
Intercept Point [4]
VDS = 1.5 V, gm = Idss /VP
Min.
50 Ohm
Transmission
Line Including
Gate Bias T
(0.5 dB loss)
40
65
80
V
-0.65
-0.5
-0.35
mA
—
15
—
mmho
90
120
—
—
10
150
0.7
0.9
VGD = 5 V
μA
VGD = VGS = -4 V
μA
f = 2 GHz
VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA
dB
0.4
0.5
f = 900 MHz
VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA
dB
0.3
0.4
f = 2 GHz
VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA
dB
f = 900 MHz
VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA
dB
f = 2 GHz
VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA
dBm
f = 900 MHz
VDS = 2 V, IDS = 15 mA
VDS = 2 V, IDS = 5 mA
dBm
19
14
f = 2 GHz
VDS = 2 V, IDSQ = 15 mA
VDS = 2 V, IDSQ = 5 mA
dBm
10
8
f = 900 MHz
VDS = 2 V, IDSQ = 15 mA
VDS = 2 V, IDSQ = 5 mA
dBm
9
9
Input
Matching Circuit
Γ_mag = 0.66
Γ_ang = 5°
(0.4 dB loss)
DUT
50 Ohm
Transmission
Line Including
Drain Bias T
(0.5 dB loss)
250
16.5
14
18
16
20
18
19
Output
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements.
This circuit represents a trade-off between an optimal noise match and a realizable match based on production test requirements.
Circuit losses have been de-embedded from actual measurements.
3
Max.
mA
Notes:
1. Guaranteed at wafer probe level
2. Typical value determined from a sample size of 450 parts from 9 wafers.
3. 2V 5 mA min/max data guaranteed via the 2V 15 mA production test.
4. Measurements obtained using production test board described in Figure 5.
5. Pout = -10 dBm per tone
Input
Typ.[2]
21
14
19.5
18
ATF-35143 Typical Performance Curves
30
30
OIP3
25
OIP3, P1dB (dBm)
20
15
P1dB
10
20
P1dB
15
2V
3V
4V
10
2V
3V
4V
5
OIP3
5
0
0
10
20
30
40
50
0
60
10
20
20
2.5
50
60
24
2.5
2V
3V
4V
22
18
1.5
20
1.5
17
1
18
1
Ga (dB)
2
Ga
NF (dB)
Ga (dB)
2V
3V
4V
Ga
NF
15
0
10
20
30
2
NF
16
40
50
0.5
16
0
14
60
0.5
0
0
10
20
IDSQ (mA)
30
40
50
60
IDSQ (mA)
Figure 8. NF and Ga vs. Bias at 2 GHz.[1]
Figure 9. NF and Ga vs. Bias at 900 MHz.[1]
25
20
20
15
15
P1dB (dBm)
P1dB (dBm)
40
Figure 7. OIP3 and P1dB vs. Bias at 900 MHz.[1,2]
Figure 6. OIP3 and P1dB vs. Bias at 2 GHz.[1,2]
19
30
IDSQ (mA)
IDSQ (mA)
NF (dB)
OIP3, P1dB (dBm)
25
10
10
5
5
2V
3V
4V
0
2V
3V
4V
0
-5
-5
0
20
40
IDS (mA)
Figure 10. P1dB vs. Bias (Active Bias)
Tuned for NF @ 2V, 15 mA at 2 GHz.[1]
60
80
0
20
40
60
80
IDS (mA)
Figure 11. P1dB vs. Bias (Active Bias)
Tuned for NF @ 2V, 15 mA at 900 MHz.[1]
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 2 V 15 mA
bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on production test
board requirements. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain
current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power
output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant
current source as is typically done with active biasing. As an example, at a VDS = 4 V and IDSQ = 5 mA, Id increases to 30 mA as a P1dB of +15 dBm is
approached.
4
ATF-35143 Typical Performance Curves, continued
25
1.50
5 mA
15 mA
30 mA
1.25
20
Fmin (dB)
Fmin (dB)
1.00
0.75
15
0.50
10
5 mA
15 mA
30 mA
0.25
5
0
2
4
6
8
0
10
20
0.8
0.6
18
25C
-40C
85C
0.4
0
12
4
6
15
25C
-40C
85C
5
0
8
2
15
1.5
10
1
P1dB
OIP3
Gain
NF
40
60
IDS (mA)
Figure 16. OIP3, P1dB, NF and Gain vs. Bias[1]
(Active Bias, 2V, 3.9 GHz).
0.5
0
80
OIP3, P1dB (dBm), Gain (dB)
20
NF (dB)
OIP3, P1dB (dBm), Gain (dB)
2.5
20
4
6
8
Figure 15. OIP3 and P1dB vs. Frequency and
Temperature[1,2], VDS=2V, IDS=15 mA.
25
0
2
FREQUENCY (GHz)
Figure 14. Fmin and Ga vs. Frequency and
Temperature, VDS=2V, IDS=15 mA.
0
10
20
FREQUENCY (GHz)
5
8
10
0.2
14
2
6
25
OIP3, P1dB (dBm)
1.0
NF (dB)
Ga (dB)
22
0
4
Figure 13. Associated Gain vs.
Frequency and Current at 2V.
Figure 12. Fmin vs. Frequency and Current at 2V.
16
2
FREQUENCY (GHz)
FREQUENCY (GHz)
25
3
20
2.5
15
2
10
1.5
NF (dB)
0
1
5
P1dB
OIP3
Gain
NF
0
-5
0
20
40
60
0.5
0
80
IDS (mA)
Figure 17. OIP3, P1dB, NF and Gain vs. Bias[1]
(Active Bias, 2V, 5.8 GHz).
Notes:
1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 2 V 15mA bias. This circuit represents a trade-off between
optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have been deembedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the
drain current may increase or decrease depending on frequency and dc bias point. At lower values of Idsq the device is running closer to class B as
power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a
constant current source as is typically done with active biasing. As an example, at a VDS = 4V and IDSQ = 5 mA, Id increases to 30 mA as a P1dB of +15
dBm is approached.
5
ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 5 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
0.99
0.98
0.97
0.94
0.91
0.90
0.85
0.81
0.72
0.66
0.62
0.60
0.60
0.62
0.66
0.70
0.72
0.74
0.76
0.82
0.82
0.84
0.86
-16.90
-26.37
-34.76
-50.59
-58.26
-65.74
-80.62
-95.48
-125.99
-156.09
174.97
145.61
118.39
93.15
71.31
50.91
31.04
11.26
-3.08
-14.26
-26.64
-38.94
-54.78
13.34
13.29
13.16
12.83
12.66
12.44
12.04
11.61
10.71
9.79
8.93
8.06
7.20
6.26
5.43
4.58
3.64
2.56
1.45
0.43
-0.72
-1.83
-3.02
4.64
4.62
4.55
4.38
4.30
4.19
4.00
3.81
3.43
3.09
2.80
2.53
2.29
2.06
1.87
1.69
1.52
1.34
1.18
1.05
0.92
0.81
0.71
166.04
157.78
150.72
137.02
130.38
123.90
111.27
99.08
75.75
53.63
32.77
12.43
-7.12
-26.14
-44.14
-62.85
-81.42
-99.46
-115.94
-132.24
-149.24
-164.44
179.28
-31.70
-28.18
-25.85
-22.73
-21.62
-20.72
-19.33
-18.27
-17.08
-16.48
-16.14
-16.08
-16.31
-16.59
-16.89
-17.14
-17.52
-18.13
-18.79
-19.25
-19.58
-19.74
-20.18
0.026
0.039
0.051
0.073
0.083
0.092
0.108
0.122
0.140
0.150
0.156
0.157
0.153
0.148
0.143
0.139
0.133
0.124
0.115
0.109
0.105
0.103
0.098
77.91
71.12
65.76
54.85
49.69
44.45
34.61
25.21
6.95
-9.83
-25.73
-41.00
-54.14
-67.05
-78.09
-88.99
-100.38
-111.06
-119.00
-127.12
-135.42
-143.49
-152.36
0.73
0.72
0.71
0.68
0.67
0.65
0.62
0.59
0.52
0.45
0.38
0.31
0.25
0.20
0.16
0.14
0.17
0.22
0.28
0.34
0.42
0.49
0.56
-12.47
-17.53
-23.33
-34.88
-40.49
-46.03
-56.68
-66.71
-85.11
-102.71
-120.16
-138.01
-157.10
-178.27
157.62
121.82
82.33
53.17
27.32
6.01
-10.69
-22.32
-35.90
22.52
20.83
19.50
17.78
17.13
16.58
15.69
14.94
13.89
13.13
12.53
12.07
11.75
11.19
9.63
8.81
7.87
6.79
5.86
5.89
4.84
4.62
4.04
ATF-35143 Typical Noise Parameters
VDS = 2 V, IDS = 5 mA
Fmin
dB
Mag.
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.10
0.12
0.14
0.20
0.23
0.27
0.33
0.39
0.52
0.64
0.77
0.89
1.02
1.14
1.27
0.91
0.87
0.86
0.81
0.78
0.76
0.71
0.66
0.58
0.52
0.47
0.43
0.41
0.40
0.41
Ang.
Rn/50
-
Ga
dB
6.4
15.0
17.2
28.0
33.4
38.8
50.0
61.9
87.2
114.4
143.2
173.5
-155.2
-122.9
-90.1
0.22
0.22
0.22
0.22
0.21
0.21
0.19
0.17
0.13
0.09
0.06
0.05
0.07
0.13
0.24
19.3
17.9
17.5
16.3
15.8
15.4
14.7
14.0
12.7
11.5
10.4
9.5
8.7
8.0
7.5
MSG/MAG and S21 (dB)
25
opt
Freq.
GHz
20
MSG
15
10
S21
MAG
5
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 18. MSG/MAG and |S21|2 vs. Frequency at 2 V, 5 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
6
ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 10 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
0.99
0.97
0.95
0.91
0.89
0.86
0.81
0.76
0.66
0.61
0.58
0.57
0.58
0.61
0.65
0.69
0.72
0.74
0.77
0.82
0.82
0.84
0.86
-18.75
-29.11
-38.28
-55.52
-63.78
-71.82
-87.59
-103.22
-134.81
-165.34
165.88
137.00
110.78
86.75
66.25
46.88
27.76
8.62
-5.28
-16.03
-28.32
-40.43
-56.14
15.89
15.79
15.61
15.17
14.92
14.65
14.11
13.54
12.40
11.29
10.27
9.27
8.33
7.32
6.44
5.54
4.56
3.45
2.33
1.29
0.19
-0.87
-1.99
6.23
6.16
6.03
5.73
5.57
5.40
5.08
4.76
4.17
3.67
3.26
2.91
2.61
2.32
2.10
1.89
1.69
1.49
1.31
1.16
1.02
0.91
0.80
164.76
155.98
148.42
133.92
127.01
120.27
107.36
95.04
71.95
50.43
30.28
10.68
-8.09
-26.38
-43.90
-61.97
-79.90
-97.18
-112.92
-128.66
-144.87
-159.49
-175.19
-32.40
-28.87
-26.56
-23.61
-22.62
-21.72
-20.35
-19.41
-18.27
-17.65
-17.33
-17.14
-17.14
-17.20
-17.20
-17.27
-17.39
-17.79
-18.20
-18.56
-18.79
-18.79
-19.33
0.024
0.036
0.047
0.066
0.074
0.082
0.096
0.107
0.122
0.131
0.136
0.139
0.139
0.138
0.138
0.137
0.135
0.129
0.123
0.118
0.115
0.115
0.108
77.63
70.58
64.88
54.16
49.11
44.08
34.60
25.71
9.04
-5.97
-20.15
-33.84
-45.60
-57.65
-68.22
-79.30
-90.87
-102.19
-110.80
-120.09
-129.92
-139.60
-149.17
0.63
0.61
0.60
0.57
0.56
0.54
0.51
0.47
0.41
0.34
0.27
0.21
0.17
0.13
0.11
0.14
0.19
0.26
0.33
0.39
0.45
0.51
0.57
-14.09
-19.69
-26.10
-38.73
-44.79
-50.70
-61.95
-72.47
-91.47
-110.05
-129.24
-150.49
-174.77
154.01
118.18
78.36
49.57
29.95
9.45
-7.98
-22.30
-32.23
-44.43
24.14
22.30
21.08
19.39
18.75
18.19
17.23
16.48
15.34
14.47
13.80
13.21
12.73
10.69
9.85
9.16
8.34
7.35
6.51
6.51
5.48
5.24
4.72
ATF-35143 Typical Noise Parameters
VDS = 2 V, IDS = 10 mA
30
Fmin
dB
Mag.
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.10
0.11
0.12
0.17
0.20
0.23
0.29
0.34
0.46
0.58
0.69
0.81
0.92
1.04
1.16
0.88
0.84
0.83
0.77
0.74
0.71
0.66
0.60
0.52
0.45
0.40
0.37
0.35
0.35
0.37
Ang.
Rn/50
-
Ga
dB
5.0
14.0
16.0
26.0
31.9
37.3
48.6
60.6
86.8
115.3
145.8
177.7
-149.3
-115.6
-81.8
0.15
0.15
0.15
0.15
0.15
0.14
0.14
0.12
0.12
0.08
0.05
0.05
0.07
0.12
0.22
20.5
19.0
18.6
17.5
16.9
16.4
15.7
15.0
13.6
12.4
11.3
10.3
9.5
8.8
8.3
25
MSG/MAG and S21 (dB)
opt
Freq.
GHz
20
MSG
15
10
MAG
S21
5
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 19. MSG/MAG and |S21|2 vs. Frequency at 2 V, 10 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at sixteen different impedances using an ATN NP5 test system. From these measurements a true
Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
7
ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 15 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
0.99
0.97
0.95
0.90
0.87
0.84
0.79
0.73
0.64
0.59
0.56
0.56
0.57
0.60
0.64
0.68
0.72
0.74
0.77
0.82
0.82
0.84
0.86
-19.75
-30.58
-40.15
-58.08
-66.65
-74.93
-91.13
-107.08
-139.07
-169.70
161.74
133.19
107.56
84.16
64.19
45.46
26.66
7.70
-5.93
-16.54
-28.76
-40.79
-56.40
17.02
16.90
16.69
16.18
15.90
15.59
14.97
14.34
13.09
11.90
10.81
9.77
8.78
7.75
6.86
5.93
4.93
3.80
2.68
1.63
0.54
-0.49
-1.60
7.10
7.00
6.83
6.44
6.23
6.02
5.61
5.21
4.51
3.93
3.47
3.08
2.75
2.44
2.20
1.98
1.76
1.55
1.36
1.21
1.06
0.95
0.83
164.04
154.98
147.18
132.28
125.22
118.41
105.38
93.08
70.17
49.03
29.27
10.04
-8.35
-26.29
-43.56
-61.33
-78.94
-95.93
-111.53
-126.76
-142.70
-157.02
-172.47
-32.77
-29.37
-27.13
-24.15
-23.10
-22.27
-20.92
-20.00
-18.94
-18.27
-17.79
-17.59
-17.46
-17.39
-17.33
-17.27
-17.27
-17.59
-17.92
-18.20
-18.49
-18.49
-18.94
0.023
0.034
0.044
0.062
0.070
0.077
0.090
0.100
0.113
0.122
0.129
0.132
0.134
0.135
0.136
0.137
0.137
0.132
0.127
0.123
0.119
0.119
0.113
77.60
70.54
64.80
54.23
49.25
44.36
35.36
26.85
11.15
-2.96
-16.43
-29.47
-40.80
-52.63
-63.33
-74.77
-86.46
-98.11
-107.51
-117.16
-127.03
-137.06
-147.50
0.57
0.55
0.54
0.51
0.49
0.48
0.44
0.41
0.35
0.29
0.23
0.17
0.14
0.11
0.12
0.16
0.22
0.29
0.36
0.41
0.47
0.53
0.58
-14.99
-20.86
-27.61
-40.74
-46.95
-53.06
-64.59
-75.32
-94.59
-113.89
-134.46
-158.65
172.14
134.01
95.85
63.20
40.01
23.11
3.55
-12.09
-26.21
-35.57
-47.29
24.89
23.05
21.91
20.17
19.53
18.93
17.95
17.17
16.01
15.09
14.30
13.68
12.29
10.74
9.99
9.34
8.57
7.62
6.79
6.76
5.81
5.55
5.06
ATF-35143 Typical Noise Parameters
VDS = 2 V, IDS = 15 mA
30
Fmin
dB
Mag.
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.10
0.13
0.14
0.19
0.22
0.23
0.29
0.34
0.45
0.56
0.67
0.79
0.90
1.01
1.12
0.88
0.83
0.82
0.76
0.72
0.70
0.64
0.58
0.49
0.42
0.37
0.34
0.33
0.34
0.36
Ang.
Rn/50
-
Ga
dB
4.5
13.1
15.3
26.1
32.6
36.9
48.5
60.9
87.9
117.4
149.0
-178.1
-144.3
-110.2
-76.3
0.19
0.17
0.16
0.15
0.15
0.14
0.12
0.07
0.13
0.07
0.05
0.05
0.07
0.13
0.23
20.9
19.4
19.2
17.9
17.3
17.0
16.2
15.4
14.1
12.8
11.7
10.8
9.9
9.2
8.6
25
MSG/MAG and S21 (dB)
opt
Freq.
GHz
20
MSG
15
10
MAG
S21
5
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 20. MSG/MAG and |S21|2 vs. Frequency at 2 V, 15 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
8
ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 30 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
0.99
0.96
0.94
0.88
0.85
0.82
0.76
0.70
0.61
0.56
0.55
0.55
0.56
0.60
0.64
0.68
0.72
0.74
0.77
0.82
0.83
0.85
0.87
-20.95
-32.34
-42.36
-61.09
-69.98
-78.53
-95.14
-111.48
-143.89
-174.55
157.19
129.18
104.19
81.48
62.07
43.83
25.46
6.81
-6.74
-17.21
-29.31
-41.30
-56.87
18.17
18.02
17.77
17.18
16.85
16.50
15.81
15.11
13.73
12.46
11.31
10.22
9.20
8.15
7.24
6.29
5.27
4.14
3.01
1.94
0.87
-0.15
-1.24
8.10
7.96
7.73
7.22
6.96
6.69
6.17
5.69
4.86
4.20
3.68
3.24
2.88
2.56
2.30
2.06
1.84
1.61
1.41
1.25
1.11
0.98
0.87
163.18
153.79
145.67
130.36
123.20
116.28
103.17
90.88
68.24
47.48
28.10
9.28
-8.75
-26.37
-43.37
-60.90
-78.22
-94.88
-110.07
-125.15
-140.80
-154.83
-170.03
-33.56
-30.17
-27.96
-25.04
-24.01
-23.22
-21.94
-21.01
-19.83
-19.02
-18.49
-18.13
-17.79
-17.59
-17.33
-17.20
-17.14
-17.33
-17.65
-17.86
-18.06
-18.13
-18.56
0.021
0.031
0.040
0.056
0.063
0.069
0.080
0.089
0.102
0.112
0.119
0.124
0.129
0.132
0.136
0.138
0.139
0.136
0.131
0.128
0.125
0.124
0.118
77.39
70.55
65.08
54.79
50.12
45.58
37.15
29.29
14.76
1.63
-10.98
-23.67
-34.72
-46.33
-57.43
-68.78
-81.32
-93.11
-103.06
-112.88
-123.55
-134.43
-144.88
0.49
0.47
0.46
0.43
0.41
0.39
0.36
0.34
0.28
0.23
0.17
0.13
0.11
0.11
0.13
0.18
0.24
0.31
0.38
0.43
0.49
0.54
0.60
-15.99
-22.00
-29.03
-42.64
-48.96
-55.19
-66.91
-77.74
-97.29
-117.24
-139.78
-169.09
155.22
112.23
77.30
51.74
32.67
17.81
0.45
-15.44
-29.37
-38.55
-49.70
25.87
24.10
22.86
21.11
20.42
19.86
18.87
18.06
16.78
15.74
14.90
14.17
11.98
10.82
10.15
9.51
8.77
7.87
7.08
7.06
6.13
5.89
5.39
ATF-35143 Typical Noise Parameters
VDS = 2 V, IDS = 30 mA
30
Fmin
dB
Mag.
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.11
0.15
0.16
0.22
0.25
0.27
0.33
0.39
0.52
0.64
0.77
0.90
1.02
1.15
1.28
0.87
0.81
0.80
0.73
0.69
0.66
0.60
0.54
0.45
0.39
0.34
0.33
0.33
0.36
0.40
Ang.
Rn/50
-
Ga
dB
2.7
12.1
14.5
26.3
33.4
38.1
50.6
64.2
94.0
126.5
160.6
-164.7
-130.3
-97.5
-67.0
0.18
0.17
0.16
0.15
0.15
0.14
0.13
0.12
0.10
0.07
0.05
0.06
0.10
0.18
0.30
21.6
20.2
19.9
18.7
18.0
17.7
17.0
16.2
14.8
13.5
12.4
11.4
10.5
9.7
9.1
25
MSG/MAG and S21 (dB)
opt
Freq.
GHz
20
MSG
15
10
MAG
S21
5
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 21. MSG/MAG and |S21|2 vs. Frequency at 2 V, 30 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
9
ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 10 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
0.99
0.97
0.95
0.91
0.88
0.86
0.81
0.75
0.66
0.60
0.58
0.56
0.57
0.60
0.64
0.68
0.71
0.74
0.77
0.82
0.82
0.84
0.86
-18.76
-29.12
-38.28
-55.52
-63.78
-71.79
-87.55
-103.15
-134.65
-165.16
166.12
137.25
111.11
87.10
66.58
47.31
28.18
9.02
-4.82
-15.65
-28.00
-40.11
-55.87
16.07
15.97
15.79
15.34
15.09
14.82
14.27
13.71
12.56
11.45
10.43
9.44
8.51
7.51
6.64
5.76
4.81
3.71
2.61
1.60
0.51
-0.55
-1.68
6.36
6.29
6.16
5.85
5.68
5.51
5.17
4.85
4.25
3.74
3.32
2.97
2.66
2.38
2.15
1.94
1.74
1.53
1.35
1.20
1.06
0.94
0.82
164.73
155.93
148.37
133.87
126.95
120.22
107.29
95.00
71.95
50.50
30.44
10.91
-7.80
-26.05
-43.52
-61.59
-79.58
-96.96
-112.95
-128.77
-145.23
-160.01
-176.05
-32.77
-29.37
-27.13
-24.01
-22.97
-22.05
-20.82
-19.83
-18.71
-18.13
-17.79
-17.65
-17.59
-17.65
-17.65
-17.65
-17.72
-17.99
-18.34
-18.56
-18.71
-18.71
-19.25
0.023
0.034
0.044
0.063
0.071
0.079
0.091
0.102
0.116
0.124
0.129
0.131
0.132
0.131
0.131
0.131
0.130
0.126
0.121
0.118
0.116
0.116
0.109
76.79
70.22
64.53
54.04
49.13
44.06
34.85
25.98
9.56
-5.10
-19.00
-32.32
-43.61
-55.14
-65.42
-76.27
-87.47
-98.60
-107.41
-116.63
-126.02
-136.14
-146.13
0.65
0.63
0.62
0.59
0.57
0.56
0.52
0.49
0.42
0.35
0.29
0.23
0.18
0.13
0.10
0.11
0.16
0.23
0.29
0.35
0.42
0.49
0.55
-13.67
-19.08
-25.28
-37.48
-43.28
-49.01
-59.84
-69.88
-87.88
-105.14
-122.61
-141.22
-162.07
172.01
139.11
93.44
57.88
35.32
13.11
-4.62
-19.61
-29.62
-41.92
24.42
22.70
21.46
19.68
19.00
18.43
17.55
16.77
15.63
14.79
14.11
13.55
12.81
10.75
9.98
9.32
8.54
7.59
6.76
6.79
5.79
5.54
5.05
ATF-35143 Typical Noise Parameters
VDS = 3 V, IDS = 10 mA
30
Fmin
dB
Mag.
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.12
0.16
0.17
0.22
0.26
0.28
0.33
0.39
0.49
0.60
0.71
0.81
0.92
1.03
1.13
0.87
0.82
0.81
0.75
0.71
0.68
0.62
0.57
0.49
0.43
0.38
0.36
0.34
0.34
0.35
Ang.
Rn/50
-
Ga
dB
4.7
13.2
15.3
25.9
32.3
36.5
47.7
59.6
85.4
113.6
143.7
175.6
-151.3
-117.3
-82.7
0.21
0.19
0.19
0.17
0.16
0.16
0.14
0.13
0.10
0.08
0.05
0.05
0.07
0.12
0.21
20.0
19.0
18.8
17.8
17.2
16.7
15.9
15.1
13.7
12.5
11.4
10.4
9.6
8.9
8.4
25
MSG/MAG and S21 (dB)
opt
Freq.
GHz
20
MSG
15
10
MAG
S21
5
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 22. MSG/MAG and |S21|2 vs. Frequency at 3 V, 10 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
10
ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 15 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
0.99
0.96
0.94
0.90
0.87
0.84
0.78
0.73
0.63
0.58
0.56
0.55
0.56
0.60
0.64
0.68
0.71
0.74
0.77
0.82
0.82
0.85
0.86
-19.76
-30.58
-40.14
-58.04
-66.61
-74.88
-91.02
-106.95
-138.86
-169.42
162.05
133.54
107.88
84.56
64.57
45.84
27.11
8.18
-5.58
-16.18
-28.41
-40.49
-56.20
17.20
17.08
16.86
16.35
16.06
15.75
15.13
14.50
13.24
12.05
10.97
9.93
8.96
7.95
7.06
6.16
5.19
4.09
2.98
1.96
0.88
-0.15
-1.25
7.24
7.14
6.97
6.57
6.35
6.13
5.71
5.31
4.59
4.00
3.53
3.14
2.81
2.50
2.26
2.03
1.82
1.60
1.41
1.25
1.11
0.98
0.87
164.03
154.94
147.12
132.22
125.16
118.36
105.32
93.02
70.17
49.09
29.39
10.23
-8.11
-26.04
-43.28
-61.06
-78.75
-95.88
-111.57
-127.09
-143.31
-157.87
-173.65
-33.15
-29.90
-27.54
-24.58
-23.48
-22.62
-21.41
-20.45
-19.41
-18.79
-18.34
-18.06
-17.92
-17.86
-17.72
-17.59
-17.59
-17.79
-18.06
-18.27
-18.42
-18.49
-18.86
0.022
0.032
0.042
0.059
0.067
0.074
0.085
0.102
0.107
0.115
0.121
0.125
0.127
0.128
0.130
0.132
0.132
0.129
0.125
0.122
0.120
0.119
0.114
76.95
69.88
64.59
54.00
49.23
44.39
35.29
27.00
11.47
-2.18
-15.36
-27.97
-38.89
-50.41
-60.57
-71.45
-83.32
-94.36
-103.78
-113.43
-123.35
-134.06
-144.46
0.60
0.58
0.57
0.54
0.52
0.50
0.47
0.44
0.37
0.31
0.24
0.19
0.14
0.11
0.09
0.12
0.18
0.25
0.31
0.37
0.44
0.50
0.56
-14.39
-20.00
-26.48
-39.05
-45.00
-50.83
-61.71
-71.87
-89.81
-107.23
-125.21
-145.42
-168.81
158.79
118.59
75.36
46.94
27.91
7.94
-8.87
-23.42
-32.96
-44.64
25.17
23.47
22.20
20.47
19.78
19.19
18.27
17.47
16.32
15.42
14.66
14.00
12.23
10.87
10.16
9.55
8.80
7.86
7.09
7.04
6.09
5.87
5.41
ATF-35143 Typical Noise Parameters
VDS = 3 V, IDS = 15 mA
30
Fmin
dB
Mag.
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.11
0.15
0.16
0.21
0.24
0.26
0.31
0.37
0.47
0.58
0.68
0.79
0.89
1.00
1.10
0.86
0.81
0.80
0.73
0.69
0.66
0.60
0.55
0.46
0.40
0.36
0.33
0.32
0.32
0.33
Ang.
Rn/50
-
Ga
dB
3.5
12.1
14.3
25.1
31.6
35.9
47.2
59.4
86.0
115.4
146.8
179.8
-146.1
-111.5
-76.8
0.17
0.16
0.16
0.15
0.14
0.20
0.17
0.15
0.11
0.07
0.05
0.05
0.07
0.13
0.22
21.2
19.9
19.6
18.2
17.6
17.2
16.3
15.6
14.2
12.9
11.8
10.8
10.0
9.3
8.8
25
MSG/MAG and S21 (dB)
opt
Freq.
GHz
20
MSG
15
10
MAG
S21
5
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 23. MSG/MAG and |S21|2 vs. Frequency at 3 V, 15 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
11
ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 30 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
0.99
0.96
0.93
0.88
0.85
0.82
0.76
0.70
0.61
0.56
0.54
0.54
0.55
0.59
0.63
0.67
0.71
0.74
0.77
0.82
0.82
0.85
0.87
-21.01
-32.39
-42.42
-61.18
-70.01
-78.57
-95.09
-111.30
-143.48
-174.00
157.98
130.06
105.20
82.53
63.18
44.96
26.64
7.94
-5.53
-16.02
-28.09
-40.02
-55.63
18.45
18.29
18.03
17.42
17.09
16.74
16.03
15.32
13.93
12.65
11.50
10.42
9.42
8.39
7.49
6.56
5.58
4.46
3.36
2.33
1.25
0.23
-0.85
8.36
8.21
7.97
7.43
7.15
6.87
6.33
5.83
4.97
4.29
3.76
3.32
2.96
2.63
2.37
2.13
1.90
1.67
1.47
1.31
1.16
1.03
0.91
163.08
153.62
145.49
130.11
122.91
116.00
102.87
90.60
68.04
47.37
28.09
9.32
-8.66
-26.26
-43.25
-60.82
-78.23
-95.07
-110.42
-125.79
-141.72
-156.00
-171.48
-33.98
-30.46
-28.40
-25.35
-24.44
-23.61
-22.38
-21.41
-20.26
-19.58
-19.02
-18.64
-18.34
-18.06
-17.79
-17.52
-17.46
-17.65
-17.86
-17.99
-18.06
-18.06
-18.49
0.020
0.030
0.038
0.054
0.060
0.066
0.076
0.085
0.097
0.105
0.112
0.117
0.121
0.125
0.129
0.133
0.134
0.131
0.128
0.126
0.125
0.125
0.119
76.89
69.94
64.80
54.32
49.77
45.15
36.87
29.08
14.96
2.38
-10.00
-22.21
-32.79
-44.11
-54.57
-66.16
-78.18
-89.74
-99.72
-109.60
-120.39
-131.03
-141.69
0.53
0.51
0.50
0.47
0.45
0.43
0.40
0.37
0.31
0.25
0.19
0.14
0.11
0.09
0.09
0.14
0.20
0.27
0.34
0.39
0.46
0.51
0.57
-15.23
-21.01
-27.72
-40.61
-46.56
-52.43
-63.37
-73.44
-91.21
-108.94
-128.04
-151.53
179.40
138.30
95.15
62.17
39.86
23.41
5.08
-11.42
-25.74
-35.29
-46.81
26.21
24.36
23.22
21.39
20.72
20.17
19.21
18.36
17.10
16.11
15.26
13.78
12.10
11.00
10.36
9.76
9.05
8.14
7.40
7.41
6.44
6.19
5.71
ATF-35143 Typical Noise Parameters
VDS = 3 V, IDS = 30 mA
30
Fmin
dB
Mag.
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.11
0.16
0.17
0.23
0.27
0.28
0.35
0.41
0.53
0.66
0.79
0.91
1.04
1.17
1.29
0.87
0.81
0.79
0.72
0.68
0.65
0.59
0.53
0.43
0.37
0.33
0.31
0.31
0.33
0.38
Ang.
Rn/50
-
Ga
dB
3.5
12.5
14.7
25.9
32.6
37.1
49.3
62.5
91.6
123.4
157.1
-168.3
-133.7
-100.0
-68.1
0.18
0.17
0.17
0.16
0.15
0.15
0.14
0.12
0.09
0.07
0.05
0.06
0.10
0.17
0.28
21.6
20.5
20.2
18.9
18.3
17.9
17.0
16.3
14.9
13.6
12.4
11.4
10.6
9.9
9.3
25
MSG/MAG and S21 (dB)
opt
Freq.
GHz
20
MSG
15
MAG
10
S21
5
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 24. MSG/MAG and |S21|2 vs. Frequency at 3 V, 30 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
12
ATF-35143 Typical Scattering Parameters, VDS = 4 V, IDS = 30 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
0.99
0.96
0.94
0.88
0.85
0.82
0.76
0.71
0.62
0.57
0.55
0.55
0.57
0.60
0.64
0.68
0.72
0.74
0.77
0.82
0.82
0.85
0.86
-21.11
-32.57
-42.70
-61.55
-70.46
-79.07
-95.78
-112.14
-144.46
-174.93
157.13
129.56
104.96
82.47
63.23
45.01
26.69
8.00
-5.46
-16.18
-28.39
-40.51
-56.36
18.54
18.38
18.13
17.53
17.20
16.84
16.14
15.43
14.04
12.76
11.61
10.54
9.55
8.53
7.64
6.74
5.79
4.71
3.64
2.65
1.62
0.64
-0.44
8.45
8.30
8.07
7.53
7.24
6.95
6.41
5.91
5.03
4.34
3.81
3.37
3.00
2.67
2.41
2.17
1.95
1.72
1.52
1.36
1.21
1.08
0.95
163.20
153.72
145.56
130.19
123.00
116.04
102.91
90.63
68.03
47.35
28.07
9.35
-8.62
-26.19
-43.13
-60.63
-78.09
-95.00
-110.50
-126.04
-142.14
-156.61
-172.55
-33.98
-30.75
-28.64
-25.68
-24.58
-23.88
-22.62
-21.72
-20.72
-20.00
-19.49
-19.25
-18.94
-18.79
-18.49
-18.27
-18.13
-18.27
-18.42
-18.49
-18.49
-18.49
-18.86
0.020
0.029
0.037
0.052
0.059
0.064
0.074
0.082
0.092
0.100
0.106
0.109
0.113
0.115
0.119
0.122
0.124
0.122
0.120
0.119
0.119
0.119
0.114
77.63
70.15
64.68
53.94
49.29
44.64
36.30
28.32
13.98
1.12
-11.07
-23.07
-33.33
-44.34
-54.44
-65.68
-77.35
-88.59
-98.13
-108.03
-118.41
-129.54
-140.19
0.56
0.54
0.53
0.50
0.48
0.46
0.43
0.40
0.34
0.28
0.22
0.17
0.13
0.09
0.07
0.09
0.15
0.22
0.28
0.34
0.40
0.46
0.52
-14.66
-20.35
-26.91
-39.45
-45.29
-50.94
-61.54
-71.17
-87.95
-104.23
-120.69
-139.29
-160.54
169.67
128.74
78.47
47.96
28.53
8.38
-8.46
-22.93
-32.29
-43.97
26.26
24.55
23.38
21.61
20.90
20.36
19.38
18.58
17.38
16.38
15.55
14.19
12.47
11.33
10.70
10.10
9.40
8.47
7.69
7.76
6.75
6.53
6.00
ATF-35143 Typical Noise Parameters
VDS = 4 V, IDS = 30 mA
30
Fmin
dB
Mag.
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.10
0.14
0.16
0.21
0.25
0.28
0.33
0.38
0.49
0.62
0.74
0.87
0.99
1.11
1.24
0.90
0.85
0.83
0.77
0.73
0.70
0.64
0.58
0.48
0.40
0.35
0.32
0.31
0.34
0.39
Ang.
Rn/50
-
Ga
dB
3.5
12.5
14.7
25.9
32.6
37.1
49.1
62.0
90.3
121.2
154.0
-172.2
-138.0
-104.2
-71.6
0.22
0.21
0.20
0.18
0.17
0.17
0.15
0.14
0.10
0.07
0.05
0.06
0.09
0.15
0.26
20.7
19.7
19.5
18.4
17.8
17.5
16.7
16.0
14.7
13.5
12.5
11.5
10.7
10.0
9.5
25
MSG/MAG and S21 (dB)
opt
Freq.
GHz
MSG
20
15
MAG
10
S21
5
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 25. MSG/MAG and |S21|2 vs. Frequency at 4 V, 30 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
13
ATF-35143 Typical Scattering Parameters, VDS = 4 V, IDS = 60 mA
Freq.
GHz
Mag.
S11
Ang.
dB
S21
Mag.
Ang.
dB
S12
Mag.
Ang.
Mag.
S22
Ang.
MSG/MAG
dB
0.50
0.75
1.00
1.50
1.75
2.00
2.50
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
0.99
0.96
0.94
0.88
0.85
0.82
0.76
0.70
0.61
0.57
0.55
0.55
0.57
0.60
0.64
0.69
0.72
0.75
0.78
0.83
0.84
0.87
0.88
-21.27
-32.77
-42.95
-61.92
-70.88
-79.55
-96.36
-112.86
-145.47
-176.15
155.85
128.25
103.61
81.11
62.01
43.90
25.78
7.31
-6.12
-16.62
-28.78
-40.91
-56.66
18.15
17.99
17.74
17.13
16.79
16.45
15.74
15.03
13.64
12.35
11.21
10.14
9.16
8.14
7.25
6.37
5.43
4.37
3.30
2.29
1.25
0.21
-0.92
8.09
7.94
7.71
7.19
6.91
6.64
6.12
5.64
4.81
4.15
3.64
3.21
2.87
2.55
2.30
2.08
1.87
1.65
1.46
1.30
1.16
1.03
0.90
163.09
153.59
145.40
129.98
122.76
115.80
102.60
90.26
67.52
46.76
27.45
8.68
-9.34
-27.02
-44.01
-61.57
-79.17
-96.36
-112.19
-127.94
-144.27
-159.19
-175.28
-34.89
-31.70
-29.37
-26.56
-25.51
-24.73
-23.48
-22.62
-21.51
-20.82
-20.26
-19.83
-19.41
-19.09
-18.71
-18.27
-17.92
-17.92
-17.92
-17.86
-17.79
-17.79
-17.99
0.018
0.026
0.034
0.047
0.053
0.058
0.067
0.074
0.084
0.091
0.097
0.102
0.107
0.111
0.116
0.122
0.127
0.127
0.127
0.128
0.129
0.129
0.126
77.28
70.40
65.05
55.14
50.40
46.34
38.10
30.61
17.18
5.47
-5.83
-17.10
-26.34
-36.93
-46.43
-57.09
-68.92
-80.43
-90.26
-100.79
-112.14
-123.71
-134.88
0.54
0.53
0.51
0.48
0.47
0.45
0.42
0.39
0.34
0.29
0.24
0.19
0.15
0.11
0.07
0.06
0.10
0.18
0.25
0.31
0.39
0.46
0.52
-13.50
-18.54
-24.50
-35.90
-41.17
-46.33
-55.86
-64.53
-79.32
-93.48
-107.07
-121.43
-137.04
-156.16
178.65
113.63
60.75
35.69
13.24
-4.12
-19.12
-28.89
-40.92
26.52
24.83
23.55
21.84
21.15
20.59
19.61
18.82
17.58
16.59
15.74
13.17
11.94
10.99
10.38
9.88
9.26
8.35
7.57
7.78
6.73
6.65
6.06
ATF-35143 Typical Noise Parameters
VDS = 4 V, IDS = 60 mA
30
Fmin
dB
Mag.
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.22
0.30
0.32
0.42
0.48
0.52
0.63
0.73
0.94
1.15
1.35
1.56
1.77
1.98
2.18
0.84
0.78
0.77
0.70
0.65
0.63
0.56
0.51
0.44
0.40
0.39
0.40
0.43
0.47
0.53
Ang.
Rn/50
-
Ga
dB
4.4
15.6
18.4
32.4
40.8
46.4
61.0
76.6
109.9
144.8
-179.8
-145.5
-113.7
-85.6
-62.6
0.29
0.29
0.28
0.26
0.25
0.24
0.21
0.19
0.13
0.09
0.08
0.13
0.26
0.48
0.79
22.5
21.3
21.0
19.8
19.2
18.8
17.8
17.0
15.5
14.1
12.9
11.9
11.0
10.3
9.8
25
MSG/MAG and S21 (dB)
opt
Freq.
GHz
MSG
20
15
MAG
10
S21
5
0
-5
0
5
10
15
20
FREQUENCY (GHz)
Figure 26. MSG/MAG and |S21|2 vs. Frequency at 4 V, 60 mA.
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is
calculated. Refer to the noise parameter application section for more information.
3. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end
of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes
connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch
diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
14
Noise Parameter Applications Information
Fmin values at 2 GHz and higher are based on
measurements while the Fmins below 2 GHz have been
extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different
impedances using an ATN NP5 test system. From these
measurements, a true Fmin is calculated. Fmin represents
the true minimum noise figure of the device when the
device is presented with an impedance matching network
that transforms the source impedance, typically 50Ω, to
an impedance represented by the reflection coefficient
o. The designer must design a matching network that
will present o to the device with minimal associated
circuit losses. The noise figure of the completed amplifier
is equal to the noise figure of the device plus the losses
of the matching network preceding the device. The
noise figure of the device is equal to Fmin only when the
device is presented with o. If the reflection coefficient
of the matching network is other than o, then the noise
figure of the device will be greater than Fmin based on the
following equation.
NF = Fmin + 4 Rn
Zo
|s – o | 2
(|1 + o| 2)(1 - s| 2)
Where Rn /Zo is the normalized noise resistance, o is
15
the optimum reflection coefficient required to produce
Fmin and s is the reflection coefficient of the source
impedance actually presented to the device. The losses
of the matching networks are non-zero and they will
also add to the noise figure of the device creating a
higher amplifier noise figure. The losses of the matching
networks are related to the Q of the components and
associated printed circuit board loss. o is typically fairly
low at higher frequencies and increases as frequency is
lowered. Larger gate width devices will typically have a
lower o as compared to narrower gate width devices.
Typically for FETs, the higher o usually infers that an
impedance much higher than 50Ω is required for the
device to produce Fmin. At VHF frequencies and even
lower L Band frequencies, the required impedance can
be in the vicinity of several thousand ohms. Matching to
such a high impedance requires very hi-Q components
in order to minimize circuit losses. As an example at
900 MHz, when airwwound coils (Q > 100) are used for
matching networks, the loss can still be up to 0.25 dB
which will add directly to the noise figure of the device.
Using muiltilayer molded inductors with Qs in the 30 to
50 range results in additional loss over the airwound coil.
Losses as high as 0.5 dB or greater add to the typical 0.15
dB Fmin of the device creating an amplifier noise figure
of nearly 0.65 dB. A discussion concerning calculated
and measured circuit losses and their effect on amplifier
noise figure is covered in Avago Application 1085.
ATF-35143 SC-70 4 Lead, High Frequency Model
Optimized for 0.1 – 6.0 GHz
R
EQUATION La=0.1 nH
EQUATION Lb=0.1 nH
EQUATION Lc=0.8 nH
EQUATION Ld=0.6 nH
EQUATION Rb=0.1 OH
EQUATION Ca=0.15 pF
EQUATION Cb=0.15 pF
L
R=0.1 OH
LOSSYL
L=Lb
R=Rb
SOURCE
L=Lb
R=Rb
L=Lc
C
L
LOSSYL
LOSSYL
GATE_IN
L=Lb
R=Rb
D
L=La *.5
C=Cb
C
C=Ca
G
L
SOURCE
L=La
S
L
LOSSYL
LOSSYL
DRAIN_OUT
L=Lb
R=Rb
L=Lb
R=Rb
L=Ld
This model can be used as a design tool. It has been tested
on MDS for various specifications. However, for more precise
and accurate design, please refer to the measured data in
this data sheet. For future improvements Avago reserves
the right to change these models without prior notice.
ATF-35143 Die Model
MESFET MODEL *
* STATZMODEL
= FET
IDS model
NFET=yes
PFET=
IDSMOD=3
VTO=–0.95
BETA= Beta
LAMBDA=0.09
ALPHA=4.0
B=0.8
TNOM=27
IDSTC=
VBI=.7
Gate model
Parasitics
DELTA=.2
GSCAP=3
CGS=cgs pF
GDCAP=3
GCD=Cgd pF
Breakdown
RG=1
RD=Rd
RS=Rs
LG=Lg nH
LD=Ld nH
LS=Ls nH
CDS=Cds pF
CRF=.1
RC=Rc
GSFWD=1
GSREV=0
GDFWD=1
GDREV=0
VJR=1
IS=1 nA
IR=1 nA
IMAX=.1
XTI=
N=
EG=
Noise
FNC=01e+6
R=.17
P=.65
C=.2
Mo de l scal fa c t or s ( W = FET widt h in m ic r ons )
XX
D
EQUATION Cds = 0. 01 * W / 200
EQUATION Beta= 0. 06 * W / 200
EQUATION Rd= 200/ W
NFETMESFET
G
XX
EQUATION Rs=. 5 * 200/ W
EQUATION Cgs = 0. 2 * W / 200
EQUATION Cgd= 0. 04 * W / 200
EQUATION Lg = 0. 03 * 200/ W
16
S
XX
EQUATION L d=0. 03 * 200/ W
EQUATION Ls= 0. 01 * 200/ W
EQUATION Rc=500 * 200/ W
MODEL=FET
W=400 μm
S
Part Number Ordering Information
Part Number
No. of
Devices
Container
ATF-35143-TR1G
3000
7” Reel
ATF-35143-TR2G
10000
13” Reel
ATF-35143-BLKG
100
antistatic bag
Package Dimensions
SC-70 4L/SOT-343
Recommended PCB Pad Layout for
Avago’s SC70 4L/SOT-343 Products
1.30 (.051)
BSC
1.30
0.051
1.00
0.039
HE
E
2.00
0.079
0.60
0.024
1.15 (.045) BSC
0.9
0.035
b1
1.15
0.045
D
Dimensions in
A2
A
A1
b
L
C
DIMENSIONS (mm)
SYMBOL
E
D
HE
A
A2
A1
b
b1
c
L
17
MIN.
1.15
1.85
1.80
0.80
0.80
0.00
0.15
0.55
0.10
0.10
MAX.
1.35
2.25
2.40
1.10
1.00
0.10
0.40
0.70
0.20
0.46
NOTES:
1. All dimensions are in mm.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. All specifications comply to EIAJ SC70.
5. Die is facing up for mold and facing down for trim/form,
ie: reverse trim/form.
6. Package surface to be mirror finish.
mm
inches
Device Orientation
REEL
TOP VIEW
END VIEW
4 mm
CARRIER
TAPE
8 mm
5PX
5PX
5PX
5PX
USER
FEED
DIRECTION
COVER TAPE
Tape Dimensions and Product Orientation For Outline 4T
P
P2
D
P0
E
F
W
C
D1
t1 (CARRIER TAPE THICKNESS)
Tt (COVER TAPE THICKNESS)
K0
10° MAX.
A0
DESCRIPTION
10° MAX.
B0
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P
D1
2.40 ± 0.10
2.40 ± 0.10
1.20 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.094 ± 0.004
0.094 ± 0.004
0.047 ± 0.004
0.157 ± 0.004
0.039 + 0.010
PERFORATION
DIAMETER
PITCH
POSITION
D
P0
E
1.55 ± 0.10
4.00 ± 0.10
1.75 ± 0.10
0.061 + 0.002
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE
WIDTH
THICKNESS
W
t1
8.00 + 0.30 - 0.10
0.254 ± 0.02
0.315 + 0.012
0.0100 ± 0.0008
COVER TAPE
WIDTH
TAPE THICKNESS
C
Tt
5.40 ± 0.10
0.062 ± 0.001
0.205 + 0.004
0.0025 ± 0.0004
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P2
2.00 ± 0.05
0.079 ± 0.002
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. Obsoletes 5989-3748EN
AV02-1416EN - June 8, 2012
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