ATF-35143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Features Avago’s ATF-35143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. Based on its featured performance, ATF-35143 is suitable for applications in cellular and PCS base stations, LEO systems, MMDS, and other systems requiring super low noise figure with good intercept in the 450 MHz to 10 GHz frequency range. Other PHEMT devices in this family are the ATF-34143 and the ATF-33143. The typical specifications for these devices at 2 GHz are shown in the table below: Surface Mount Package SOT-343 Lead-free Option Available Low Noise Figure Excellent Uniformity in Product Specifications Low Cost Surface Mount Small Plastic Package SOT-343 (4 lead SC-70) Tape-and-Reel Packaging Option Available Specifications 1.9 GHz; 2 V, 15 mA (Typ.) 0.4 dB Noise Figure 18 dB Associated Gain 11 dBm Output Power at 1 dB Gain Compression 21 dBm Output 3rd Order Intercept Applications Low Noise Amplifier for Cellular/PCS Handsets LNA for WLAN, WLL/RLL, LEO, and MMDS Applications General Purpose Discrete PHEMT for Other Ultra Low Noise Applications DRAIN SOURCE 5Px Pin Connections and Package Marking SOURCE Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 0) Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control. GATE Note: Top View. Package marking provides orientation and identification. “5P” = Device code “x” = Date code character. A new character is assigned for each month, year. Part No. Gate Width Bias Point NF (dB) Ga (dB) OIP3 (dBm) ATF-33143 1600 μ 4 V, 80 mA 0.5 15.0 33.5 ATF-34143 800 μ 4 V, 60 mA 0.5 17.5 31.5 ATF-35143 400 μ 2 V, 15 mA 0.4 18.0 21.0 ATF-35143 Absolute Maximum Ratings[1] Symbol Parameter Drain - Source Voltage [2] VDS Source Voltage [2] Units Absolute Maximum V 5.5 VGS Gate - V -5 VGD Gate Drain Voltage [2] V -5 IDS Current[2] mA Idss[3] mW 300 Drain Pdiss Total Power Dissipation[4] RF Input Power Pin max Channel Temperature TCH dBm 14 °C 160 TSTG Storage Temperature °C -65 to 160 jc Thermal Resistance [5] °C/W 150 Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Assumes DC quiesent conditions. 3. VGS = 0 V 4. Source lead temperature is 25°C. Derate 3.2 mW/°C for TL > 67°C. 5. Thermal resistance measured using QFI Measurement method. Product Consistency Distribution Charts [7, 8] 120 120 +0.6 V 100 100 80 IDS (mA) Cpk = 1.73 Std = 0.35 80 0V -3 Std 60 +3 Std 60 40 40 –0.6 V 20 20 0 0 2 4 VDS (V) 6 0 19 8 20 21 22 23 24 OIP3 (dBm) Figure 1. Typical Pulsed I-V Curves[6]. (VGS = -0.2 V per step) Figure 2. OIP3 @ 2 GHz, 2 V, 15 mA. LSL=19.0, Nominal=20.9, USL=23.0 200 Cpk = 3.7 Std = 0.03 160 Cpk = 2.75 Std = 0.17 160 120 120 -3 Std +3 Std -3 Std +3 Std 80 80 40 40 0 0.2 0.3 0.4 0.5 NF (dB) Figure 3. NF @ 2 GHz, 2 V, 15 mA. LSL=0.2, Nominal=0.37, USL=0.7 0.6 0.7 0 16 17 18 19 20 GAIN (dB) Figure 4. Gain @ 2 GHz, 2 V, 15 mA. LSL=16.5, Nominal=18.0, USL=19.5 Notes: 6. Under large signal conditions, VGS may swing positive and the drain current may exceed Idss. These conditions are acceptable as long as the maximum Pdiss and Pin max ratings are not exceeded. 7. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values anywhere within the upper and lower spec limits. 8. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on production test requirements. Circuit losses have been de-embedded from actual measurements. 2 ATF-35143 Electrical Specifications TA = 25°C, RF parameters measured in a test circuit for a typical device Symbol Parameters and Test Conditions Idss [1] VP [1] Id gm[1] Saturated Drain Current VDS = 1.5 V, IDS = 10% of Idss Quiescent Bias Current VGS = 0.45 V, VDS = 2 V Transconductance Gate to Drain Leakage Current Igss Gate Leakage Current Ga VDS = 1.5 V, VGS = 0 V Pinchoff Voltage IGDO NF Units Noise Figure[3] Associated Gain[3] OIP3 Output 3rd Order Intercept Point [4, 5] P1dB 1 dB Compressed Intercept Point [4] VDS = 1.5 V, gm = Idss /VP Min. 50 Ohm Transmission Line Including Gate Bias T (0.5 dB loss) 40 65 80 V -0.65 -0.5 -0.35 mA — 15 — mmho 90 120 — — 10 150 0.7 0.9 VGD = 5 V μA VGD = VGS = -4 V μA f = 2 GHz VDS = 2 V, IDS = 15 mA VDS = 2 V, IDS = 5 mA dB 0.4 0.5 f = 900 MHz VDS = 2 V, IDS = 15 mA VDS = 2 V, IDS = 5 mA dB 0.3 0.4 f = 2 GHz VDS = 2 V, IDS = 15 mA VDS = 2 V, IDS = 5 mA dB f = 900 MHz VDS = 2 V, IDS = 15 mA VDS = 2 V, IDS = 5 mA dB f = 2 GHz VDS = 2 V, IDS = 15 mA VDS = 2 V, IDS = 5 mA dBm f = 900 MHz VDS = 2 V, IDS = 15 mA VDS = 2 V, IDS = 5 mA dBm 19 14 f = 2 GHz VDS = 2 V, IDSQ = 15 mA VDS = 2 V, IDSQ = 5 mA dBm 10 8 f = 900 MHz VDS = 2 V, IDSQ = 15 mA VDS = 2 V, IDSQ = 5 mA dBm 9 9 Input Matching Circuit Γ_mag = 0.66 Γ_ang = 5° (0.4 dB loss) DUT 50 Ohm Transmission Line Including Drain Bias T (0.5 dB loss) 250 16.5 14 18 16 20 18 19 Output Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit represents a trade-off between an optimal noise match and a realizable match based on production test requirements. Circuit losses have been de-embedded from actual measurements. 3 Max. mA Notes: 1. Guaranteed at wafer probe level 2. Typical value determined from a sample size of 450 parts from 9 wafers. 3. 2V 5 mA min/max data guaranteed via the 2V 15 mA production test. 4. Measurements obtained using production test board described in Figure 5. 5. Pout = -10 dBm per tone Input Typ.[2] 21 14 19.5 18 ATF-35143 Typical Performance Curves 30 30 OIP3 25 OIP3, P1dB (dBm) 20 15 P1dB 10 20 P1dB 15 2V 3V 4V 10 2V 3V 4V 5 OIP3 5 0 0 10 20 30 40 50 0 60 10 20 20 2.5 50 60 24 2.5 2V 3V 4V 22 18 1.5 20 1.5 17 1 18 1 Ga (dB) 2 Ga NF (dB) Ga (dB) 2V 3V 4V Ga NF 15 0 10 20 30 2 NF 16 40 50 0.5 16 0 14 60 0.5 0 0 10 20 IDSQ (mA) 30 40 50 60 IDSQ (mA) Figure 8. NF and Ga vs. Bias at 2 GHz.[1] Figure 9. NF and Ga vs. Bias at 900 MHz.[1] 25 20 20 15 15 P1dB (dBm) P1dB (dBm) 40 Figure 7. OIP3 and P1dB vs. Bias at 900 MHz.[1,2] Figure 6. OIP3 and P1dB vs. Bias at 2 GHz.[1,2] 19 30 IDSQ (mA) IDSQ (mA) NF (dB) OIP3, P1dB (dBm) 25 10 10 5 5 2V 3V 4V 0 2V 3V 4V 0 -5 -5 0 20 40 IDS (mA) Figure 10. P1dB vs. Bias (Active Bias) Tuned for NF @ 2V, 15 mA at 2 GHz.[1] 60 80 0 20 40 60 80 IDS (mA) Figure 11. P1dB vs. Bias (Active Bias) Tuned for NF @ 2V, 15 mA at 900 MHz.[1] Notes: 1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 2 V 15 mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on production test board requirements. Circuit losses have been de-embedded from actual measurements. 2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 4 V and IDSQ = 5 mA, Id increases to 30 mA as a P1dB of +15 dBm is approached. 4 ATF-35143 Typical Performance Curves, continued 25 1.50 5 mA 15 mA 30 mA 1.25 20 Fmin (dB) Fmin (dB) 1.00 0.75 15 0.50 10 5 mA 15 mA 30 mA 0.25 5 0 2 4 6 8 0 10 20 0.8 0.6 18 25C -40C 85C 0.4 0 12 4 6 15 25C -40C 85C 5 0 8 2 15 1.5 10 1 P1dB OIP3 Gain NF 40 60 IDS (mA) Figure 16. OIP3, P1dB, NF and Gain vs. Bias[1] (Active Bias, 2V, 3.9 GHz). 0.5 0 80 OIP3, P1dB (dBm), Gain (dB) 20 NF (dB) OIP3, P1dB (dBm), Gain (dB) 2.5 20 4 6 8 Figure 15. OIP3 and P1dB vs. Frequency and Temperature[1,2], VDS=2V, IDS=15 mA. 25 0 2 FREQUENCY (GHz) Figure 14. Fmin and Ga vs. Frequency and Temperature, VDS=2V, IDS=15 mA. 0 10 20 FREQUENCY (GHz) 5 8 10 0.2 14 2 6 25 OIP3, P1dB (dBm) 1.0 NF (dB) Ga (dB) 22 0 4 Figure 13. Associated Gain vs. Frequency and Current at 2V. Figure 12. Fmin vs. Frequency and Current at 2V. 16 2 FREQUENCY (GHz) FREQUENCY (GHz) 25 3 20 2.5 15 2 10 1.5 NF (dB) 0 1 5 P1dB OIP3 Gain NF 0 -5 0 20 40 60 0.5 0 80 IDS (mA) Figure 17. OIP3, P1dB, NF and Gain vs. Bias[1] (Active Bias, 2V, 5.8 GHz). Notes: 1. Measurements made on a fixed tuned test fixture that was tuned for noise figure at 2 V 15mA bias. This circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on production test requirements. Circuit losses have been deembedded from actual measurements. 2. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of Idsq the device is running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a VDS = 4V and IDSQ = 5 mA, Id increases to 30 mA as a P1dB of +15 dBm is approached. 5 ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 5 mA Freq. GHz Mag. S11 Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. S22 Ang. MSG/MAG dB 0.50 0.75 1.00 1.50 1.75 2.00 2.50 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 0.99 0.98 0.97 0.94 0.91 0.90 0.85 0.81 0.72 0.66 0.62 0.60 0.60 0.62 0.66 0.70 0.72 0.74 0.76 0.82 0.82 0.84 0.86 -16.90 -26.37 -34.76 -50.59 -58.26 -65.74 -80.62 -95.48 -125.99 -156.09 174.97 145.61 118.39 93.15 71.31 50.91 31.04 11.26 -3.08 -14.26 -26.64 -38.94 -54.78 13.34 13.29 13.16 12.83 12.66 12.44 12.04 11.61 10.71 9.79 8.93 8.06 7.20 6.26 5.43 4.58 3.64 2.56 1.45 0.43 -0.72 -1.83 -3.02 4.64 4.62 4.55 4.38 4.30 4.19 4.00 3.81 3.43 3.09 2.80 2.53 2.29 2.06 1.87 1.69 1.52 1.34 1.18 1.05 0.92 0.81 0.71 166.04 157.78 150.72 137.02 130.38 123.90 111.27 99.08 75.75 53.63 32.77 12.43 -7.12 -26.14 -44.14 -62.85 -81.42 -99.46 -115.94 -132.24 -149.24 -164.44 179.28 -31.70 -28.18 -25.85 -22.73 -21.62 -20.72 -19.33 -18.27 -17.08 -16.48 -16.14 -16.08 -16.31 -16.59 -16.89 -17.14 -17.52 -18.13 -18.79 -19.25 -19.58 -19.74 -20.18 0.026 0.039 0.051 0.073 0.083 0.092 0.108 0.122 0.140 0.150 0.156 0.157 0.153 0.148 0.143 0.139 0.133 0.124 0.115 0.109 0.105 0.103 0.098 77.91 71.12 65.76 54.85 49.69 44.45 34.61 25.21 6.95 -9.83 -25.73 -41.00 -54.14 -67.05 -78.09 -88.99 -100.38 -111.06 -119.00 -127.12 -135.42 -143.49 -152.36 0.73 0.72 0.71 0.68 0.67 0.65 0.62 0.59 0.52 0.45 0.38 0.31 0.25 0.20 0.16 0.14 0.17 0.22 0.28 0.34 0.42 0.49 0.56 -12.47 -17.53 -23.33 -34.88 -40.49 -46.03 -56.68 -66.71 -85.11 -102.71 -120.16 -138.01 -157.10 -178.27 157.62 121.82 82.33 53.17 27.32 6.01 -10.69 -22.32 -35.90 22.52 20.83 19.50 17.78 17.13 16.58 15.69 14.94 13.89 13.13 12.53 12.07 11.75 11.19 9.63 8.81 7.87 6.79 5.86 5.89 4.84 4.62 4.04 ATF-35143 Typical Noise Parameters VDS = 2 V, IDS = 5 mA Fmin dB Mag. 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.10 0.12 0.14 0.20 0.23 0.27 0.33 0.39 0.52 0.64 0.77 0.89 1.02 1.14 1.27 0.91 0.87 0.86 0.81 0.78 0.76 0.71 0.66 0.58 0.52 0.47 0.43 0.41 0.40 0.41 Ang. Rn/50 - Ga dB 6.4 15.0 17.2 28.0 33.4 38.8 50.0 61.9 87.2 114.4 143.2 173.5 -155.2 -122.9 -90.1 0.22 0.22 0.22 0.22 0.21 0.21 0.19 0.17 0.13 0.09 0.06 0.05 0.07 0.13 0.24 19.3 17.9 17.5 16.3 15.8 15.4 14.7 14.0 12.7 11.5 10.4 9.5 8.7 8.0 7.5 MSG/MAG and S21 (dB) 25 opt Freq. GHz 20 MSG 15 10 S21 MAG 5 0 -5 0 5 10 15 20 FREQUENCY (GHz) Figure 18. MSG/MAG and |S21|2 vs. Frequency at 2 V, 5 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 6 ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 10 mA Freq. GHz Mag. S11 Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. S22 Ang. MSG/MAG dB 0.50 0.75 1.00 1.50 1.75 2.00 2.50 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 0.99 0.97 0.95 0.91 0.89 0.86 0.81 0.76 0.66 0.61 0.58 0.57 0.58 0.61 0.65 0.69 0.72 0.74 0.77 0.82 0.82 0.84 0.86 -18.75 -29.11 -38.28 -55.52 -63.78 -71.82 -87.59 -103.22 -134.81 -165.34 165.88 137.00 110.78 86.75 66.25 46.88 27.76 8.62 -5.28 -16.03 -28.32 -40.43 -56.14 15.89 15.79 15.61 15.17 14.92 14.65 14.11 13.54 12.40 11.29 10.27 9.27 8.33 7.32 6.44 5.54 4.56 3.45 2.33 1.29 0.19 -0.87 -1.99 6.23 6.16 6.03 5.73 5.57 5.40 5.08 4.76 4.17 3.67 3.26 2.91 2.61 2.32 2.10 1.89 1.69 1.49 1.31 1.16 1.02 0.91 0.80 164.76 155.98 148.42 133.92 127.01 120.27 107.36 95.04 71.95 50.43 30.28 10.68 -8.09 -26.38 -43.90 -61.97 -79.90 -97.18 -112.92 -128.66 -144.87 -159.49 -175.19 -32.40 -28.87 -26.56 -23.61 -22.62 -21.72 -20.35 -19.41 -18.27 -17.65 -17.33 -17.14 -17.14 -17.20 -17.20 -17.27 -17.39 -17.79 -18.20 -18.56 -18.79 -18.79 -19.33 0.024 0.036 0.047 0.066 0.074 0.082 0.096 0.107 0.122 0.131 0.136 0.139 0.139 0.138 0.138 0.137 0.135 0.129 0.123 0.118 0.115 0.115 0.108 77.63 70.58 64.88 54.16 49.11 44.08 34.60 25.71 9.04 -5.97 -20.15 -33.84 -45.60 -57.65 -68.22 -79.30 -90.87 -102.19 -110.80 -120.09 -129.92 -139.60 -149.17 0.63 0.61 0.60 0.57 0.56 0.54 0.51 0.47 0.41 0.34 0.27 0.21 0.17 0.13 0.11 0.14 0.19 0.26 0.33 0.39 0.45 0.51 0.57 -14.09 -19.69 -26.10 -38.73 -44.79 -50.70 -61.95 -72.47 -91.47 -110.05 -129.24 -150.49 -174.77 154.01 118.18 78.36 49.57 29.95 9.45 -7.98 -22.30 -32.23 -44.43 24.14 22.30 21.08 19.39 18.75 18.19 17.23 16.48 15.34 14.47 13.80 13.21 12.73 10.69 9.85 9.16 8.34 7.35 6.51 6.51 5.48 5.24 4.72 ATF-35143 Typical Noise Parameters VDS = 2 V, IDS = 10 mA 30 Fmin dB Mag. 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.10 0.11 0.12 0.17 0.20 0.23 0.29 0.34 0.46 0.58 0.69 0.81 0.92 1.04 1.16 0.88 0.84 0.83 0.77 0.74 0.71 0.66 0.60 0.52 0.45 0.40 0.37 0.35 0.35 0.37 Ang. Rn/50 - Ga dB 5.0 14.0 16.0 26.0 31.9 37.3 48.6 60.6 86.8 115.3 145.8 177.7 -149.3 -115.6 -81.8 0.15 0.15 0.15 0.15 0.15 0.14 0.14 0.12 0.12 0.08 0.05 0.05 0.07 0.12 0.22 20.5 19.0 18.6 17.5 16.9 16.4 15.7 15.0 13.6 12.4 11.3 10.3 9.5 8.8 8.3 25 MSG/MAG and S21 (dB) opt Freq. GHz 20 MSG 15 10 MAG S21 5 0 -5 0 5 10 15 20 FREQUENCY (GHz) Figure 19. MSG/MAG and |S21|2 vs. Frequency at 2 V, 10 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at sixteen different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 7 ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 15 mA Freq. GHz Mag. S11 Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. S22 Ang. MSG/MAG dB 0.50 0.75 1.00 1.50 1.75 2.00 2.50 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 0.99 0.97 0.95 0.90 0.87 0.84 0.79 0.73 0.64 0.59 0.56 0.56 0.57 0.60 0.64 0.68 0.72 0.74 0.77 0.82 0.82 0.84 0.86 -19.75 -30.58 -40.15 -58.08 -66.65 -74.93 -91.13 -107.08 -139.07 -169.70 161.74 133.19 107.56 84.16 64.19 45.46 26.66 7.70 -5.93 -16.54 -28.76 -40.79 -56.40 17.02 16.90 16.69 16.18 15.90 15.59 14.97 14.34 13.09 11.90 10.81 9.77 8.78 7.75 6.86 5.93 4.93 3.80 2.68 1.63 0.54 -0.49 -1.60 7.10 7.00 6.83 6.44 6.23 6.02 5.61 5.21 4.51 3.93 3.47 3.08 2.75 2.44 2.20 1.98 1.76 1.55 1.36 1.21 1.06 0.95 0.83 164.04 154.98 147.18 132.28 125.22 118.41 105.38 93.08 70.17 49.03 29.27 10.04 -8.35 -26.29 -43.56 -61.33 -78.94 -95.93 -111.53 -126.76 -142.70 -157.02 -172.47 -32.77 -29.37 -27.13 -24.15 -23.10 -22.27 -20.92 -20.00 -18.94 -18.27 -17.79 -17.59 -17.46 -17.39 -17.33 -17.27 -17.27 -17.59 -17.92 -18.20 -18.49 -18.49 -18.94 0.023 0.034 0.044 0.062 0.070 0.077 0.090 0.100 0.113 0.122 0.129 0.132 0.134 0.135 0.136 0.137 0.137 0.132 0.127 0.123 0.119 0.119 0.113 77.60 70.54 64.80 54.23 49.25 44.36 35.36 26.85 11.15 -2.96 -16.43 -29.47 -40.80 -52.63 -63.33 -74.77 -86.46 -98.11 -107.51 -117.16 -127.03 -137.06 -147.50 0.57 0.55 0.54 0.51 0.49 0.48 0.44 0.41 0.35 0.29 0.23 0.17 0.14 0.11 0.12 0.16 0.22 0.29 0.36 0.41 0.47 0.53 0.58 -14.99 -20.86 -27.61 -40.74 -46.95 -53.06 -64.59 -75.32 -94.59 -113.89 -134.46 -158.65 172.14 134.01 95.85 63.20 40.01 23.11 3.55 -12.09 -26.21 -35.57 -47.29 24.89 23.05 21.91 20.17 19.53 18.93 17.95 17.17 16.01 15.09 14.30 13.68 12.29 10.74 9.99 9.34 8.57 7.62 6.79 6.76 5.81 5.55 5.06 ATF-35143 Typical Noise Parameters VDS = 2 V, IDS = 15 mA 30 Fmin dB Mag. 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.10 0.13 0.14 0.19 0.22 0.23 0.29 0.34 0.45 0.56 0.67 0.79 0.90 1.01 1.12 0.88 0.83 0.82 0.76 0.72 0.70 0.64 0.58 0.49 0.42 0.37 0.34 0.33 0.34 0.36 Ang. Rn/50 - Ga dB 4.5 13.1 15.3 26.1 32.6 36.9 48.5 60.9 87.9 117.4 149.0 -178.1 -144.3 -110.2 -76.3 0.19 0.17 0.16 0.15 0.15 0.14 0.12 0.07 0.13 0.07 0.05 0.05 0.07 0.13 0.23 20.9 19.4 19.2 17.9 17.3 17.0 16.2 15.4 14.1 12.8 11.7 10.8 9.9 9.2 8.6 25 MSG/MAG and S21 (dB) opt Freq. GHz 20 MSG 15 10 MAG S21 5 0 -5 0 5 10 15 20 FREQUENCY (GHz) Figure 20. MSG/MAG and |S21|2 vs. Frequency at 2 V, 15 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 8 ATF-35143 Typical Scattering Parameters, VDS = 2 V, IDS = 30 mA Freq. GHz Mag. S11 Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. S22 Ang. MSG/MAG dB 0.50 0.75 1.00 1.50 1.75 2.00 2.50 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 0.99 0.96 0.94 0.88 0.85 0.82 0.76 0.70 0.61 0.56 0.55 0.55 0.56 0.60 0.64 0.68 0.72 0.74 0.77 0.82 0.83 0.85 0.87 -20.95 -32.34 -42.36 -61.09 -69.98 -78.53 -95.14 -111.48 -143.89 -174.55 157.19 129.18 104.19 81.48 62.07 43.83 25.46 6.81 -6.74 -17.21 -29.31 -41.30 -56.87 18.17 18.02 17.77 17.18 16.85 16.50 15.81 15.11 13.73 12.46 11.31 10.22 9.20 8.15 7.24 6.29 5.27 4.14 3.01 1.94 0.87 -0.15 -1.24 8.10 7.96 7.73 7.22 6.96 6.69 6.17 5.69 4.86 4.20 3.68 3.24 2.88 2.56 2.30 2.06 1.84 1.61 1.41 1.25 1.11 0.98 0.87 163.18 153.79 145.67 130.36 123.20 116.28 103.17 90.88 68.24 47.48 28.10 9.28 -8.75 -26.37 -43.37 -60.90 -78.22 -94.88 -110.07 -125.15 -140.80 -154.83 -170.03 -33.56 -30.17 -27.96 -25.04 -24.01 -23.22 -21.94 -21.01 -19.83 -19.02 -18.49 -18.13 -17.79 -17.59 -17.33 -17.20 -17.14 -17.33 -17.65 -17.86 -18.06 -18.13 -18.56 0.021 0.031 0.040 0.056 0.063 0.069 0.080 0.089 0.102 0.112 0.119 0.124 0.129 0.132 0.136 0.138 0.139 0.136 0.131 0.128 0.125 0.124 0.118 77.39 70.55 65.08 54.79 50.12 45.58 37.15 29.29 14.76 1.63 -10.98 -23.67 -34.72 -46.33 -57.43 -68.78 -81.32 -93.11 -103.06 -112.88 -123.55 -134.43 -144.88 0.49 0.47 0.46 0.43 0.41 0.39 0.36 0.34 0.28 0.23 0.17 0.13 0.11 0.11 0.13 0.18 0.24 0.31 0.38 0.43 0.49 0.54 0.60 -15.99 -22.00 -29.03 -42.64 -48.96 -55.19 -66.91 -77.74 -97.29 -117.24 -139.78 -169.09 155.22 112.23 77.30 51.74 32.67 17.81 0.45 -15.44 -29.37 -38.55 -49.70 25.87 24.10 22.86 21.11 20.42 19.86 18.87 18.06 16.78 15.74 14.90 14.17 11.98 10.82 10.15 9.51 8.77 7.87 7.08 7.06 6.13 5.89 5.39 ATF-35143 Typical Noise Parameters VDS = 2 V, IDS = 30 mA 30 Fmin dB Mag. 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.11 0.15 0.16 0.22 0.25 0.27 0.33 0.39 0.52 0.64 0.77 0.90 1.02 1.15 1.28 0.87 0.81 0.80 0.73 0.69 0.66 0.60 0.54 0.45 0.39 0.34 0.33 0.33 0.36 0.40 Ang. Rn/50 - Ga dB 2.7 12.1 14.5 26.3 33.4 38.1 50.6 64.2 94.0 126.5 160.6 -164.7 -130.3 -97.5 -67.0 0.18 0.17 0.16 0.15 0.15 0.14 0.13 0.12 0.10 0.07 0.05 0.06 0.10 0.18 0.30 21.6 20.2 19.9 18.7 18.0 17.7 17.0 16.2 14.8 13.5 12.4 11.4 10.5 9.7 9.1 25 MSG/MAG and S21 (dB) opt Freq. GHz 20 MSG 15 10 MAG S21 5 0 -5 0 5 10 15 20 FREQUENCY (GHz) Figure 21. MSG/MAG and |S21|2 vs. Frequency at 2 V, 30 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATF NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 9 ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 10 mA Freq. GHz Mag. S11 Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. S22 Ang. MSG/MAG dB 0.50 0.75 1.00 1.50 1.75 2.00 2.50 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 0.99 0.97 0.95 0.91 0.88 0.86 0.81 0.75 0.66 0.60 0.58 0.56 0.57 0.60 0.64 0.68 0.71 0.74 0.77 0.82 0.82 0.84 0.86 -18.76 -29.12 -38.28 -55.52 -63.78 -71.79 -87.55 -103.15 -134.65 -165.16 166.12 137.25 111.11 87.10 66.58 47.31 28.18 9.02 -4.82 -15.65 -28.00 -40.11 -55.87 16.07 15.97 15.79 15.34 15.09 14.82 14.27 13.71 12.56 11.45 10.43 9.44 8.51 7.51 6.64 5.76 4.81 3.71 2.61 1.60 0.51 -0.55 -1.68 6.36 6.29 6.16 5.85 5.68 5.51 5.17 4.85 4.25 3.74 3.32 2.97 2.66 2.38 2.15 1.94 1.74 1.53 1.35 1.20 1.06 0.94 0.82 164.73 155.93 148.37 133.87 126.95 120.22 107.29 95.00 71.95 50.50 30.44 10.91 -7.80 -26.05 -43.52 -61.59 -79.58 -96.96 -112.95 -128.77 -145.23 -160.01 -176.05 -32.77 -29.37 -27.13 -24.01 -22.97 -22.05 -20.82 -19.83 -18.71 -18.13 -17.79 -17.65 -17.59 -17.65 -17.65 -17.65 -17.72 -17.99 -18.34 -18.56 -18.71 -18.71 -19.25 0.023 0.034 0.044 0.063 0.071 0.079 0.091 0.102 0.116 0.124 0.129 0.131 0.132 0.131 0.131 0.131 0.130 0.126 0.121 0.118 0.116 0.116 0.109 76.79 70.22 64.53 54.04 49.13 44.06 34.85 25.98 9.56 -5.10 -19.00 -32.32 -43.61 -55.14 -65.42 -76.27 -87.47 -98.60 -107.41 -116.63 -126.02 -136.14 -146.13 0.65 0.63 0.62 0.59 0.57 0.56 0.52 0.49 0.42 0.35 0.29 0.23 0.18 0.13 0.10 0.11 0.16 0.23 0.29 0.35 0.42 0.49 0.55 -13.67 -19.08 -25.28 -37.48 -43.28 -49.01 -59.84 -69.88 -87.88 -105.14 -122.61 -141.22 -162.07 172.01 139.11 93.44 57.88 35.32 13.11 -4.62 -19.61 -29.62 -41.92 24.42 22.70 21.46 19.68 19.00 18.43 17.55 16.77 15.63 14.79 14.11 13.55 12.81 10.75 9.98 9.32 8.54 7.59 6.76 6.79 5.79 5.54 5.05 ATF-35143 Typical Noise Parameters VDS = 3 V, IDS = 10 mA 30 Fmin dB Mag. 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.12 0.16 0.17 0.22 0.26 0.28 0.33 0.39 0.49 0.60 0.71 0.81 0.92 1.03 1.13 0.87 0.82 0.81 0.75 0.71 0.68 0.62 0.57 0.49 0.43 0.38 0.36 0.34 0.34 0.35 Ang. Rn/50 - Ga dB 4.7 13.2 15.3 25.9 32.3 36.5 47.7 59.6 85.4 113.6 143.7 175.6 -151.3 -117.3 -82.7 0.21 0.19 0.19 0.17 0.16 0.16 0.14 0.13 0.10 0.08 0.05 0.05 0.07 0.12 0.21 20.0 19.0 18.8 17.8 17.2 16.7 15.9 15.1 13.7 12.5 11.4 10.4 9.6 8.9 8.4 25 MSG/MAG and S21 (dB) opt Freq. GHz 20 MSG 15 10 MAG S21 5 0 -5 0 5 10 15 20 FREQUENCY (GHz) Figure 22. MSG/MAG and |S21|2 vs. Frequency at 3 V, 10 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 10 ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 15 mA Freq. GHz Mag. S11 Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. S22 Ang. MSG/MAG dB 0.50 0.75 1.00 1.50 1.75 2.00 2.50 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 0.99 0.96 0.94 0.90 0.87 0.84 0.78 0.73 0.63 0.58 0.56 0.55 0.56 0.60 0.64 0.68 0.71 0.74 0.77 0.82 0.82 0.85 0.86 -19.76 -30.58 -40.14 -58.04 -66.61 -74.88 -91.02 -106.95 -138.86 -169.42 162.05 133.54 107.88 84.56 64.57 45.84 27.11 8.18 -5.58 -16.18 -28.41 -40.49 -56.20 17.20 17.08 16.86 16.35 16.06 15.75 15.13 14.50 13.24 12.05 10.97 9.93 8.96 7.95 7.06 6.16 5.19 4.09 2.98 1.96 0.88 -0.15 -1.25 7.24 7.14 6.97 6.57 6.35 6.13 5.71 5.31 4.59 4.00 3.53 3.14 2.81 2.50 2.26 2.03 1.82 1.60 1.41 1.25 1.11 0.98 0.87 164.03 154.94 147.12 132.22 125.16 118.36 105.32 93.02 70.17 49.09 29.39 10.23 -8.11 -26.04 -43.28 -61.06 -78.75 -95.88 -111.57 -127.09 -143.31 -157.87 -173.65 -33.15 -29.90 -27.54 -24.58 -23.48 -22.62 -21.41 -20.45 -19.41 -18.79 -18.34 -18.06 -17.92 -17.86 -17.72 -17.59 -17.59 -17.79 -18.06 -18.27 -18.42 -18.49 -18.86 0.022 0.032 0.042 0.059 0.067 0.074 0.085 0.102 0.107 0.115 0.121 0.125 0.127 0.128 0.130 0.132 0.132 0.129 0.125 0.122 0.120 0.119 0.114 76.95 69.88 64.59 54.00 49.23 44.39 35.29 27.00 11.47 -2.18 -15.36 -27.97 -38.89 -50.41 -60.57 -71.45 -83.32 -94.36 -103.78 -113.43 -123.35 -134.06 -144.46 0.60 0.58 0.57 0.54 0.52 0.50 0.47 0.44 0.37 0.31 0.24 0.19 0.14 0.11 0.09 0.12 0.18 0.25 0.31 0.37 0.44 0.50 0.56 -14.39 -20.00 -26.48 -39.05 -45.00 -50.83 -61.71 -71.87 -89.81 -107.23 -125.21 -145.42 -168.81 158.79 118.59 75.36 46.94 27.91 7.94 -8.87 -23.42 -32.96 -44.64 25.17 23.47 22.20 20.47 19.78 19.19 18.27 17.47 16.32 15.42 14.66 14.00 12.23 10.87 10.16 9.55 8.80 7.86 7.09 7.04 6.09 5.87 5.41 ATF-35143 Typical Noise Parameters VDS = 3 V, IDS = 15 mA 30 Fmin dB Mag. 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.11 0.15 0.16 0.21 0.24 0.26 0.31 0.37 0.47 0.58 0.68 0.79 0.89 1.00 1.10 0.86 0.81 0.80 0.73 0.69 0.66 0.60 0.55 0.46 0.40 0.36 0.33 0.32 0.32 0.33 Ang. Rn/50 - Ga dB 3.5 12.1 14.3 25.1 31.6 35.9 47.2 59.4 86.0 115.4 146.8 179.8 -146.1 -111.5 -76.8 0.17 0.16 0.16 0.15 0.14 0.20 0.17 0.15 0.11 0.07 0.05 0.05 0.07 0.13 0.22 21.2 19.9 19.6 18.2 17.6 17.2 16.3 15.6 14.2 12.9 11.8 10.8 10.0 9.3 8.8 25 MSG/MAG and S21 (dB) opt Freq. GHz 20 MSG 15 10 MAG S21 5 0 -5 0 5 10 15 20 FREQUENCY (GHz) Figure 23. MSG/MAG and |S21|2 vs. Frequency at 3 V, 15 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 11 ATF-35143 Typical Scattering Parameters, VDS = 3 V, IDS = 30 mA Freq. GHz Mag. S11 Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. S22 Ang. MSG/MAG dB 0.50 0.75 1.00 1.50 1.75 2.00 2.50 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 0.99 0.96 0.93 0.88 0.85 0.82 0.76 0.70 0.61 0.56 0.54 0.54 0.55 0.59 0.63 0.67 0.71 0.74 0.77 0.82 0.82 0.85 0.87 -21.01 -32.39 -42.42 -61.18 -70.01 -78.57 -95.09 -111.30 -143.48 -174.00 157.98 130.06 105.20 82.53 63.18 44.96 26.64 7.94 -5.53 -16.02 -28.09 -40.02 -55.63 18.45 18.29 18.03 17.42 17.09 16.74 16.03 15.32 13.93 12.65 11.50 10.42 9.42 8.39 7.49 6.56 5.58 4.46 3.36 2.33 1.25 0.23 -0.85 8.36 8.21 7.97 7.43 7.15 6.87 6.33 5.83 4.97 4.29 3.76 3.32 2.96 2.63 2.37 2.13 1.90 1.67 1.47 1.31 1.16 1.03 0.91 163.08 153.62 145.49 130.11 122.91 116.00 102.87 90.60 68.04 47.37 28.09 9.32 -8.66 -26.26 -43.25 -60.82 -78.23 -95.07 -110.42 -125.79 -141.72 -156.00 -171.48 -33.98 -30.46 -28.40 -25.35 -24.44 -23.61 -22.38 -21.41 -20.26 -19.58 -19.02 -18.64 -18.34 -18.06 -17.79 -17.52 -17.46 -17.65 -17.86 -17.99 -18.06 -18.06 -18.49 0.020 0.030 0.038 0.054 0.060 0.066 0.076 0.085 0.097 0.105 0.112 0.117 0.121 0.125 0.129 0.133 0.134 0.131 0.128 0.126 0.125 0.125 0.119 76.89 69.94 64.80 54.32 49.77 45.15 36.87 29.08 14.96 2.38 -10.00 -22.21 -32.79 -44.11 -54.57 -66.16 -78.18 -89.74 -99.72 -109.60 -120.39 -131.03 -141.69 0.53 0.51 0.50 0.47 0.45 0.43 0.40 0.37 0.31 0.25 0.19 0.14 0.11 0.09 0.09 0.14 0.20 0.27 0.34 0.39 0.46 0.51 0.57 -15.23 -21.01 -27.72 -40.61 -46.56 -52.43 -63.37 -73.44 -91.21 -108.94 -128.04 -151.53 179.40 138.30 95.15 62.17 39.86 23.41 5.08 -11.42 -25.74 -35.29 -46.81 26.21 24.36 23.22 21.39 20.72 20.17 19.21 18.36 17.10 16.11 15.26 13.78 12.10 11.00 10.36 9.76 9.05 8.14 7.40 7.41 6.44 6.19 5.71 ATF-35143 Typical Noise Parameters VDS = 3 V, IDS = 30 mA 30 Fmin dB Mag. 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.11 0.16 0.17 0.23 0.27 0.28 0.35 0.41 0.53 0.66 0.79 0.91 1.04 1.17 1.29 0.87 0.81 0.79 0.72 0.68 0.65 0.59 0.53 0.43 0.37 0.33 0.31 0.31 0.33 0.38 Ang. Rn/50 - Ga dB 3.5 12.5 14.7 25.9 32.6 37.1 49.3 62.5 91.6 123.4 157.1 -168.3 -133.7 -100.0 -68.1 0.18 0.17 0.17 0.16 0.15 0.15 0.14 0.12 0.09 0.07 0.05 0.06 0.10 0.17 0.28 21.6 20.5 20.2 18.9 18.3 17.9 17.0 16.3 14.9 13.6 12.4 11.4 10.6 9.9 9.3 25 MSG/MAG and S21 (dB) opt Freq. GHz 20 MSG 15 MAG 10 S21 5 0 -5 0 5 10 15 20 FREQUENCY (GHz) Figure 24. MSG/MAG and |S21|2 vs. Frequency at 3 V, 30 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 12 ATF-35143 Typical Scattering Parameters, VDS = 4 V, IDS = 30 mA Freq. GHz Mag. S11 Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. S22 Ang. MSG/MAG dB 0.50 0.75 1.00 1.50 1.75 2.00 2.50 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 0.99 0.96 0.94 0.88 0.85 0.82 0.76 0.71 0.62 0.57 0.55 0.55 0.57 0.60 0.64 0.68 0.72 0.74 0.77 0.82 0.82 0.85 0.86 -21.11 -32.57 -42.70 -61.55 -70.46 -79.07 -95.78 -112.14 -144.46 -174.93 157.13 129.56 104.96 82.47 63.23 45.01 26.69 8.00 -5.46 -16.18 -28.39 -40.51 -56.36 18.54 18.38 18.13 17.53 17.20 16.84 16.14 15.43 14.04 12.76 11.61 10.54 9.55 8.53 7.64 6.74 5.79 4.71 3.64 2.65 1.62 0.64 -0.44 8.45 8.30 8.07 7.53 7.24 6.95 6.41 5.91 5.03 4.34 3.81 3.37 3.00 2.67 2.41 2.17 1.95 1.72 1.52 1.36 1.21 1.08 0.95 163.20 153.72 145.56 130.19 123.00 116.04 102.91 90.63 68.03 47.35 28.07 9.35 -8.62 -26.19 -43.13 -60.63 -78.09 -95.00 -110.50 -126.04 -142.14 -156.61 -172.55 -33.98 -30.75 -28.64 -25.68 -24.58 -23.88 -22.62 -21.72 -20.72 -20.00 -19.49 -19.25 -18.94 -18.79 -18.49 -18.27 -18.13 -18.27 -18.42 -18.49 -18.49 -18.49 -18.86 0.020 0.029 0.037 0.052 0.059 0.064 0.074 0.082 0.092 0.100 0.106 0.109 0.113 0.115 0.119 0.122 0.124 0.122 0.120 0.119 0.119 0.119 0.114 77.63 70.15 64.68 53.94 49.29 44.64 36.30 28.32 13.98 1.12 -11.07 -23.07 -33.33 -44.34 -54.44 -65.68 -77.35 -88.59 -98.13 -108.03 -118.41 -129.54 -140.19 0.56 0.54 0.53 0.50 0.48 0.46 0.43 0.40 0.34 0.28 0.22 0.17 0.13 0.09 0.07 0.09 0.15 0.22 0.28 0.34 0.40 0.46 0.52 -14.66 -20.35 -26.91 -39.45 -45.29 -50.94 -61.54 -71.17 -87.95 -104.23 -120.69 -139.29 -160.54 169.67 128.74 78.47 47.96 28.53 8.38 -8.46 -22.93 -32.29 -43.97 26.26 24.55 23.38 21.61 20.90 20.36 19.38 18.58 17.38 16.38 15.55 14.19 12.47 11.33 10.70 10.10 9.40 8.47 7.69 7.76 6.75 6.53 6.00 ATF-35143 Typical Noise Parameters VDS = 4 V, IDS = 30 mA 30 Fmin dB Mag. 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.10 0.14 0.16 0.21 0.25 0.28 0.33 0.38 0.49 0.62 0.74 0.87 0.99 1.11 1.24 0.90 0.85 0.83 0.77 0.73 0.70 0.64 0.58 0.48 0.40 0.35 0.32 0.31 0.34 0.39 Ang. Rn/50 - Ga dB 3.5 12.5 14.7 25.9 32.6 37.1 49.1 62.0 90.3 121.2 154.0 -172.2 -138.0 -104.2 -71.6 0.22 0.21 0.20 0.18 0.17 0.17 0.15 0.14 0.10 0.07 0.05 0.06 0.09 0.15 0.26 20.7 19.7 19.5 18.4 17.8 17.5 16.7 16.0 14.7 13.5 12.5 11.5 10.7 10.0 9.5 25 MSG/MAG and S21 (dB) opt Freq. GHz MSG 20 15 MAG 10 S21 5 0 -5 0 5 10 15 20 FREQUENCY (GHz) Figure 25. MSG/MAG and |S21|2 vs. Frequency at 4 V, 30 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 13 ATF-35143 Typical Scattering Parameters, VDS = 4 V, IDS = 60 mA Freq. GHz Mag. S11 Ang. dB S21 Mag. Ang. dB S12 Mag. Ang. Mag. S22 Ang. MSG/MAG dB 0.50 0.75 1.00 1.50 1.75 2.00 2.50 3.00 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 0.99 0.96 0.94 0.88 0.85 0.82 0.76 0.70 0.61 0.57 0.55 0.55 0.57 0.60 0.64 0.69 0.72 0.75 0.78 0.83 0.84 0.87 0.88 -21.27 -32.77 -42.95 -61.92 -70.88 -79.55 -96.36 -112.86 -145.47 -176.15 155.85 128.25 103.61 81.11 62.01 43.90 25.78 7.31 -6.12 -16.62 -28.78 -40.91 -56.66 18.15 17.99 17.74 17.13 16.79 16.45 15.74 15.03 13.64 12.35 11.21 10.14 9.16 8.14 7.25 6.37 5.43 4.37 3.30 2.29 1.25 0.21 -0.92 8.09 7.94 7.71 7.19 6.91 6.64 6.12 5.64 4.81 4.15 3.64 3.21 2.87 2.55 2.30 2.08 1.87 1.65 1.46 1.30 1.16 1.03 0.90 163.09 153.59 145.40 129.98 122.76 115.80 102.60 90.26 67.52 46.76 27.45 8.68 -9.34 -27.02 -44.01 -61.57 -79.17 -96.36 -112.19 -127.94 -144.27 -159.19 -175.28 -34.89 -31.70 -29.37 -26.56 -25.51 -24.73 -23.48 -22.62 -21.51 -20.82 -20.26 -19.83 -19.41 -19.09 -18.71 -18.27 -17.92 -17.92 -17.92 -17.86 -17.79 -17.79 -17.99 0.018 0.026 0.034 0.047 0.053 0.058 0.067 0.074 0.084 0.091 0.097 0.102 0.107 0.111 0.116 0.122 0.127 0.127 0.127 0.128 0.129 0.129 0.126 77.28 70.40 65.05 55.14 50.40 46.34 38.10 30.61 17.18 5.47 -5.83 -17.10 -26.34 -36.93 -46.43 -57.09 -68.92 -80.43 -90.26 -100.79 -112.14 -123.71 -134.88 0.54 0.53 0.51 0.48 0.47 0.45 0.42 0.39 0.34 0.29 0.24 0.19 0.15 0.11 0.07 0.06 0.10 0.18 0.25 0.31 0.39 0.46 0.52 -13.50 -18.54 -24.50 -35.90 -41.17 -46.33 -55.86 -64.53 -79.32 -93.48 -107.07 -121.43 -137.04 -156.16 178.65 113.63 60.75 35.69 13.24 -4.12 -19.12 -28.89 -40.92 26.52 24.83 23.55 21.84 21.15 20.59 19.61 18.82 17.58 16.59 15.74 13.17 11.94 10.99 10.38 9.88 9.26 8.35 7.57 7.78 6.73 6.65 6.06 ATF-35143 Typical Noise Parameters VDS = 4 V, IDS = 60 mA 30 Fmin dB Mag. 0.5 0.9 1.0 1.5 1.8 2.0 2.5 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0.22 0.30 0.32 0.42 0.48 0.52 0.63 0.73 0.94 1.15 1.35 1.56 1.77 1.98 2.18 0.84 0.78 0.77 0.70 0.65 0.63 0.56 0.51 0.44 0.40 0.39 0.40 0.43 0.47 0.53 Ang. Rn/50 - Ga dB 4.4 15.6 18.4 32.4 40.8 46.4 61.0 76.6 109.9 144.8 -179.8 -145.5 -113.7 -85.6 -62.6 0.29 0.29 0.28 0.26 0.25 0.24 0.21 0.19 0.13 0.09 0.08 0.13 0.26 0.48 0.79 22.5 21.3 21.0 19.8 19.2 18.8 17.8 17.0 15.5 14.1 12.9 11.9 11.0 10.3 9.8 25 MSG/MAG and S21 (dB) opt Freq. GHz MSG 20 15 MAG 10 S21 5 0 -5 0 5 10 15 20 FREQUENCY (GHz) Figure 26. MSG/MAG and |S21|2 vs. Frequency at 4 V, 60 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. Refer to the noise parameter application section for more information. 3. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point. 14 Noise Parameter Applications Information Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements, a true Fmin is calculated. Fmin represents the true minimum noise figure of the device when the device is presented with an impedance matching network that transforms the source impedance, typically 50Ω, to an impedance represented by the reflection coefficient o. The designer must design a matching network that will present o to the device with minimal associated circuit losses. The noise figure of the completed amplifier is equal to the noise figure of the device plus the losses of the matching network preceding the device. The noise figure of the device is equal to Fmin only when the device is presented with o. If the reflection coefficient of the matching network is other than o, then the noise figure of the device will be greater than Fmin based on the following equation. NF = Fmin + 4 Rn Zo |s – o | 2 (|1 + o| 2)(1 - s| 2) Where Rn /Zo is the normalized noise resistance, o is 15 the optimum reflection coefficient required to produce Fmin and s is the reflection coefficient of the source impedance actually presented to the device. The losses of the matching networks are non-zero and they will also add to the noise figure of the device creating a higher amplifier noise figure. The losses of the matching networks are related to the Q of the components and associated printed circuit board loss. o is typically fairly low at higher frequencies and increases as frequency is lowered. Larger gate width devices will typically have a lower o as compared to narrower gate width devices. Typically for FETs, the higher o usually infers that an impedance much higher than 50Ω is required for the device to produce Fmin. At VHF frequencies and even lower L Band frequencies, the required impedance can be in the vicinity of several thousand ohms. Matching to such a high impedance requires very hi-Q components in order to minimize circuit losses. As an example at 900 MHz, when airwwound coils (Q > 100) are used for matching networks, the loss can still be up to 0.25 dB which will add directly to the noise figure of the device. Using muiltilayer molded inductors with Qs in the 30 to 50 range results in additional loss over the airwound coil. Losses as high as 0.5 dB or greater add to the typical 0.15 dB Fmin of the device creating an amplifier noise figure of nearly 0.65 dB. A discussion concerning calculated and measured circuit losses and their effect on amplifier noise figure is covered in Avago Application 1085. ATF-35143 SC-70 4 Lead, High Frequency Model Optimized for 0.1 – 6.0 GHz R EQUATION La=0.1 nH EQUATION Lb=0.1 nH EQUATION Lc=0.8 nH EQUATION Ld=0.6 nH EQUATION Rb=0.1 OH EQUATION Ca=0.15 pF EQUATION Cb=0.15 pF L R=0.1 OH LOSSYL L=Lb R=Rb SOURCE L=Lb R=Rb L=Lc C L LOSSYL LOSSYL GATE_IN L=Lb R=Rb D L=La *.5 C=Cb C C=Ca G L SOURCE L=La S L LOSSYL LOSSYL DRAIN_OUT L=Lb R=Rb L=Lb R=Rb L=Ld This model can be used as a design tool. It has been tested on MDS for various specifications. However, for more precise and accurate design, please refer to the measured data in this data sheet. For future improvements Avago reserves the right to change these models without prior notice. ATF-35143 Die Model MESFET MODEL * * STATZMODEL = FET IDS model NFET=yes PFET= IDSMOD=3 VTO=–0.95 BETA= Beta LAMBDA=0.09 ALPHA=4.0 B=0.8 TNOM=27 IDSTC= VBI=.7 Gate model Parasitics DELTA=.2 GSCAP=3 CGS=cgs pF GDCAP=3 GCD=Cgd pF Breakdown RG=1 RD=Rd RS=Rs LG=Lg nH LD=Ld nH LS=Ls nH CDS=Cds pF CRF=.1 RC=Rc GSFWD=1 GSREV=0 GDFWD=1 GDREV=0 VJR=1 IS=1 nA IR=1 nA IMAX=.1 XTI= N= EG= Noise FNC=01e+6 R=.17 P=.65 C=.2 Mo de l scal fa c t or s ( W = FET widt h in m ic r ons ) XX D EQUATION Cds = 0. 01 * W / 200 EQUATION Beta= 0. 06 * W / 200 EQUATION Rd= 200/ W NFETMESFET G XX EQUATION Rs=. 5 * 200/ W EQUATION Cgs = 0. 2 * W / 200 EQUATION Cgd= 0. 04 * W / 200 EQUATION Lg = 0. 03 * 200/ W 16 S XX EQUATION L d=0. 03 * 200/ W EQUATION Ls= 0. 01 * 200/ W EQUATION Rc=500 * 200/ W MODEL=FET W=400 μm S Part Number Ordering Information Part Number No. of Devices Container ATF-35143-TR1G 3000 7” Reel ATF-35143-TR2G 10000 13” Reel ATF-35143-BLKG 100 antistatic bag Package Dimensions SC-70 4L/SOT-343 Recommended PCB Pad Layout for Avago’s SC70 4L/SOT-343 Products 1.30 (.051) BSC 1.30 0.051 1.00 0.039 HE E 2.00 0.079 0.60 0.024 1.15 (.045) BSC 0.9 0.035 b1 1.15 0.045 D Dimensions in A2 A A1 b L C DIMENSIONS (mm) SYMBOL E D HE A A2 A1 b b1 c L 17 MIN. 1.15 1.85 1.80 0.80 0.80 0.00 0.15 0.55 0.10 0.10 MAX. 1.35 2.25 2.40 1.10 1.00 0.10 0.40 0.70 0.20 0.46 NOTES: 1. All dimensions are in mm. 2. Dimensions are inclusive of plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. All specifications comply to EIAJ SC70. 5. Die is facing up for mold and facing down for trim/form, ie: reverse trim/form. 6. Package surface to be mirror finish. mm inches Device Orientation REEL TOP VIEW END VIEW 4 mm CARRIER TAPE 8 mm 5PX 5PX 5PX 5PX USER FEED DIRECTION COVER TAPE Tape Dimensions and Product Orientation For Outline 4T P P2 D P0 E F W C D1 t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) K0 10° MAX. A0 DESCRIPTION 10° MAX. B0 SYMBOL SIZE (mm) SIZE (INCHES) CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER A0 B0 K0 P D1 2.40 ± 0.10 2.40 ± 0.10 1.20 ± 0.10 4.00 ± 0.10 1.00 + 0.25 0.094 ± 0.004 0.094 ± 0.004 0.047 ± 0.004 0.157 ± 0.004 0.039 + 0.010 PERFORATION DIAMETER PITCH POSITION D P0 E 1.55 ± 0.10 4.00 ± 0.10 1.75 ± 0.10 0.061 + 0.002 0.157 ± 0.004 0.069 ± 0.004 CARRIER TAPE WIDTH THICKNESS W t1 8.00 + 0.30 - 0.10 0.254 ± 0.02 0.315 + 0.012 0.0100 ± 0.0008 COVER TAPE WIDTH TAPE THICKNESS C Tt 5.40 ± 0.10 0.062 ± 0.001 0.205 + 0.004 0.0025 ± 0.0004 DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) F 3.50 ± 0.05 0.138 ± 0.002 CAVITY TO PERFORATION (LENGTH DIRECTION) P2 2.00 ± 0.05 0.079 ± 0.002 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. Obsoletes 5989-3748EN AV02-1416EN - June 8, 2012