Plastic-Encapsulate Diodes B5819W SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters + - Free wheeling, and polarity protection applications. SOD-123 MARKING: S4/SL MAXIMUM RATINGS (TA=25 unless otherwise noted) Value Units Non-Repetitive Peak reverse voltage VRM 40 V Peak Repetitive Peak reverse voltage VRRM 40 V VRWM 40 V VR 40 V 28 V IO 1 A Peak forward surge current @=8.3ms IFSM 9 A Repetitive Peak Forward Current IFRM 1.5 A Pd 500 mW Thermal Resistance Junction to Ambient RθJA 250 /W Storage temperature TSTG -65~+150 ht Working Peak Reverse Voltage DC Blocking RMS Reverse Voltage R(RMS) Average Rectified Output Current Power Dissipation ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise specified) ed t mi Li ., Co / r hk to i. uc em nd os co 3 mi 87 ak Se 78- w.m KO -3 ww MA 08 :// 40 tp Symbol Parameter Symbol Test conditions MIN V(BR) I R = 1mA 40 Reverse voltage leakage current IR VR= 40V Forward voltage VF Reverse breakdown voltage Diode capacitance CD MAX UNIT V 1 mA I F =1A 0.6 V I F =3A 0.9 V VR=4V, f=1MHz 120 pF MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/ Page:P2-P1 Plastic-Encapsulate Diodes B5819W Typical Characteristics t mi Li ., Co / r hk to i. uc em nd os co 3 mi 87 ak Se 78- w.m KO -3 ww MA 08 :// 40 tp ht ed MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/ Page:P2-P2