ES3AF THRU ES3JF HD AF80 SMAF Plastic-Encapsulate Diodes Super Fast Recovery Rectifier Diode Features ●Io 3A SMAF ●VRRM 50V-600V ●High surge current capability ●Glass passivated chip ● Polarity: Color band denotes cathode Applications ● Rectifier Marking ● ES3AF-ES3JF : ES3A-ES3J Item Symbol Unit ES3 Test Conditions AF BF Repetitive Peak Reverse Voltage Maximum RMS Voltage CF DF EF GF HF JF VRRM V 50 100 150 200 300 400 500 600 V RMS V 35 70 105 140 210 280 350 420 IF(AV) A IFSM A TJ ℃ -55~+150 TSTG ℃ -55 ~ +150 Average Forward Current Surge(Non-repetitive)Forward Current Junction Temperature Storage Temperature 60HZ Half-sine wave, Resistance load, TL=120℃ 3.0 60Hz Half-sine wave ,1 cycle , Ta =25℃ 100 Electrical Characteristics (Ta=25℃ Unless otherwise specified） Item Unit Peak Forward Voltage VF V IF =3.0A Maximum reverse recovery time trr ns IF=0.5A,IR=1.0A,Irr=0.25A 35 Ta =25℃ 10 Ta =100℃ 100 Peak Reverse Current Thermal Resistance(Typical) IRRM1 IRRM2 μA RθJ-A Test Condition ES3 Symbol VRM=VRRM AF BF CF DF FF GF 0.95 1.25 HF JF 1.7 1) Between junction and ambient 47 Between junction and terminal 12 ℃/W RθJ-L 1) Notes: Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas High Diode Semiconductor 1 Typical Characteristics FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT IFSM(A) IO(A) FIG.1: FORWARD CURRENT DERATING CURVE 3.5 3.0 150 125 8.3ms Single Half Sine Wave 2.5 100 2.0 75 1.5 50 1.0 Resistive or Inductive Load P.C.B. Mounted on 0.2"×0.2" (5.0mm×5.0mm)Copper Pad Areas 0.5 0 0 25 25 75 50 100 125 150 TL(℃) 0 1 10 FIG.3: TYPICAL FORWARD CHARACTERISTICS FIG.4：TYPICAL REVERSE CHARACTERISTICS 100 IR(uA) IF(A) 100 Number of Cycles TJ=25℃ Pulse width=300us 1% Duty Cycle 10000 Tj=150℃ 1000 10 Tj=125℃ 100 ES3A-D 1.0 ES3F-G Tj=100℃ 10 ES3H-J 0.1 Tj=25℃ 1.0 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.8 VF(V) 20 40 60 80 100 Voltage(%) FIG.5: Diagram of circuit and Testing wave form of reverse recovery time I D trr IF VR IF RL t 0 IRR IR High Diode Semiconductor 2 SMAF .193(4.90) .173(4.40) .047(1.20) .035(0.90) .146(3.70) .130(3.30) .063(1.60) .106(2.70) .051(1.30) .094(2.40) .009(0.23) .007(0.18) .051(1.30) .039(1.00) Dimensions in inches and (millimeters) SMAF 1.9 4.65 0.55 JSHD JSHD High Diode Semiconductor 3 Reel Taping Specifications For Surface Mount Devices-SMAF High Diode Semiconductor 4