BDV65-A-B-C NNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching applications. complementary is BDV64-A- B-C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current ICM Collector Peak Current IB Base Current 26/09/2012 Value BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C COMSET SEMICONDUCTORS 60 80 100 120 60 80 100 120 5.0 Unit V V V 12 A 15 0.5 A 1/4 BDV65-A-B-C ABSOLUTE MAXIMUM RATINGS Symbol Ratings Tmb = 25° C Power Dissipation PT Tmb = 25° C Junction Temperature TJ Storage Temperature TS Value BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C Unit 125 Watts 3.5 150 °C -65 to +150 THERMAL CHARACTERISTICS Symbol Rthj-c Rthj-a Ratings Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 26/09/2012 Value BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C COMSET SEMICONDUCTORS Unit 1 °C / W 35.7 2/4 BDV65-A-B-C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICEO IEBO ICBO Ratings Collector Cutoff Current Emitter Cutoff Current Collector Cutoff Current Test Condition(s) VCE= 30 V, IB= 0 VCE= 40 V, IB= 0 VCE= 50 V, IB= 0 VCE= 60 V, IB= 0 VBE= 5 V, IC= 0 IE= 0 Tj=25°C IE= 0 Tj=150°C VCB= 60 V VCB= 80 V VCB= 100 V VCB= 120 V VCB= 30 V VCB= 40 V VCB= 50 V VCB= 60 V VCEO Collector-Emitter I = 30 mA, IB = 0 Breakdown Voltage (*) C hFE DC Current Gain (*) VCE= 4 V, IC= 5 A VCE(SAT) Collector-Emitter saturation Voltage (*) IC= 5 A, IB= 20 mA VBE Base-Emitter Voltage(*) VCE= 4 V, IC= 5 A BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C BDV65 BDV65A BDV65B BDV65C Min Typ Mx Unit - - 2 mA - - 5 mA - - 0.4 mA - - 2 60 80 100 120 - - 1000 - - - - - 2 V - - 2,5 V V (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 1.5 % 26/09/2012 COMSET SEMICONDUCTORS 3/4 BDV65-A-B-C MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package DIMENSIONS (mm) Min. A B C D E F G H J K L M N O P R S T Pin 1 : Pin 2 : Pin 3 : Package Max. 15.20 1.90 4.60 3.10 1600 2.10 5.00 3.30 9.60 2.00 0.55 1.40 5.55 0.35 5.35 20.00 19.60 0.95 20.20 1.25 2.00 3.00 4.00 4.00 1.80 5.20 4.80 Base Collector Emitter Collector Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 26/09/2012 [email protected] COMSET SEMICONDUCTORS 4/4