Infineon BC846T Npn silicon af transistor Datasheet

BC846T...BC850T
NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain
3
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types:
BC856T, BC857T,
2
BC858T, BC859T, BC860T
1
Type
Marking
Pin Configuration
BC846AT
1As
1=B
2=E
3=C
SC75
BC846BT
1Bs
1=B
2=E
3=C
SC75
BC847AT
1Es
1=B
2=E
3=C
SC75
BC847BT
1Fs
1=B
2=E
3=C
SC75
BC847CT
1Gs
1=B
2=E
3=C
SC75
BC848AT
1Js
1=B
2=E
3=C
SC75
BC848BT
1Ks
1=B
2=E
3=C
SC75
BC848CT
1Ls
1=B
2=E
3=C
SC75
BC849BT
2Bs
1=B
2=E
3=C
SC75
BC849CT
2cs
1=B
2=E
3=C
SC75
BC850BT
2Fs
1=B
2=E
3=C
SC75
BC850CT
2Gs
1=B
2=E
3=C
SC75
1
VPS05996
Package
Aug-01-2002
BC846T...BC850T
Maximum Ratings
Symbol
Parameter
BC846T
BC847T BC848T
Unit
BC850T BC849T
Collector-emitter voltage
VCEO
65
45
30
V
Collector-base voltage
VCBO
80
50
30
Collector-emitter voltage
VCES
80
50
30
Emitter-base voltage
VEBO
6
6
5
DC collector current
IC
100
mA
Peak collector current
ICM
200
mA
Peak base current
IBM
200
Peak emitter current
IEM
200
Total power dissipation, TS = 109 °C
Ptot
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-65 ... 150
RthJS
165
Thermal Resistance
Junction - soldering point1)
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
V
V(BR)CEO
IC = 10 mA, IB = 0
BC846T
65
-
-
IC = 10 mA, IB = 0
BC847T/BC850T
45
-
-
IC = 10 mA, IB = 0
BC848T/BC849T
30
-
-
V(BR)CBO
Collector-base breakdown voltage
IC = 10 µA, IE = 0
BC846T
80
-
-
IC = 10 µA, IE = 0
BC847T/850T
50
-
-
IC = 10 µA, IE = 0
BC848T/849T
30
-
-
1For calculation of R
thJA please refer to Application Note Thermal Resistance
2
Aug-01-2002
BC846T...BC850T
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
V
V(BR)CES
IC = 10 µA, VBE = 0
BC846T
65
-
-
IC = 10 µA, VBE = 0
BC847T/850T
50
-
-
IC = 10 µA, VBE = 0
BC848T/849T
30
-
-
Emitter-base breakdown voltage
V(BR)EBO
IE = 1 µA, IC = 0
BC846T
6
-
-
IE = 1 µA, IC = 0
BC847T/BC850T
6
-
-
IE = 1 µA, IC = 0
BC848T/BC849T
5
-
-
ICBO
-
-
15
nA
ICBO
-
-
5
µA
Collector cutoff current
VCB = 30 V, IE = 0
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain 1)
-
hFE
IC = 10 µA, VCE = 5 V
hFE-group A
-
140
-
IC = 10 µA, VCE = 5 V
hFE-group B
-
250
-
IC = 10 µA, VCE = 5 V
hFE-group C
-
480
-
hFE
DC current gain 1)
IC = 2 mA, VCE = 5 V
hFE-group A
110
180
220
IC = 2 mA, VCE = 5 V
hFE-group B
200
290
450
IC = 2 mA, VCE = 5 V
hFE-group C
420
520
800
Collector-emitter saturation voltage1)
mV
VCEsat
IC = 10 mA, IB = 0.5 mA
-
90
250
IC = 100 mA, IB = 5 mA
-
200
600
IC = 10 mA, IB = 0.5 mA
-
700
-
IC = 100 mA, IB = 5 mA
-
900
-
IC = 2 mA, VCE = 5 V
580
660
700
IC = 10 mA, VCE = 5 V
-
-
770
VBEsat
Base-emitter saturation voltage 1)
Base-emitter voltage 1)
VBE(ON)
1) Pulse test: t ≤=300µs, D = 2%
3
Aug-01-2002
BC846T...BC850T
Electrical Characteristicsat TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
fT
-
250
-
MHz
Ccb
-
3
-
pF
Ceb
-
8
-
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance
k
h11e
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE-group A
-
2.7
-
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE-group B
-
4.7
-
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE-group C
-
8.7
-
Open-circuit reverse voltage transf.ratio
10-4
h12e
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE-group A
-
1.5
-
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE-group B
-
2
-
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE-group C
-
3
-
Short-circuit forward current transf.ratio
-
h21e
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE-group A
-
200
-
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE-group B
-
330
-
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE-group C
-
600
-
Open-circuit output admittance
S
h22e
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE-group A
-
18
-
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE-group B
-
30
-
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE-group C
-
60
-
4
Aug-01-2002
BC846T...BC850T
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC Characteristics
Noise figure
F
IC = 200 µA, VCE = 5 V, RS = 2 k,
f = 1 kHz, f = 200 Hz
BC849T
IC = 200 µA, VCE = 5 V, RS = 2 k,
f = 1 kHz, f = 200 Hz
-
1.2
4
-
1
4
-
-
BC850T
Equivalent noise voltage
Vn
IC = 200 µA, VCE = 5 V, RS = 2 k,
f = 10 ... 50 Hz
dB
0.135 µV
BC850T
5
Aug-01-2002
BC846T...BC850T
Collector-base capacitance CCB = f (VCBO
Emitter-base capacitance CEB = f (VEBO)
Total power dissipation Ptot = f (TS )
300
C CB0
( C EB0 )
mW
12
pF
BC 846...850
EHP00361
P tot
10
200
8
150
6
100
4
50
2
0
0
20
40
60
80
120 °C
100
0
10 -1
150
C EB
C CB
5
10 0
V
TS
VCB0
Permissible Pulse Load
Transition frequency fT = f (IC)
Ptotmax / PtotDC = f (tp)
VCE = 5V
10 3
10 1
(VEB0 )
EHP00363
10 3
Ptotmax / PtotDC
MHz
fT
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
10 0 -6
10
10
-5
10
-4
10
-3
5
10 2
5
10
-2
s
10
10 1
10 -1
0
5 10 0
5
10 1
mA
10 2
ΙC
tp
6
Aug-01-2002
BC846T...BC850T
Collector cutoff current ICBO = f (TA )
Collector-emitter saturation voltage
VCB = 30V
IC = f (VCEsat), h FE = 20
EHP00381
10 4
nA
EHP00367
10 2
Ι CB0
ΙC
mA
10 3
100 C
25 C
-50 C
5
10
10 1
max
2
5
5
typ
10 1
5
10
10
0
5
0
5
10 -1
0
50
100
C
10 -1
150
0
0.1
0.2
0.4
0.3
TA
DC current gain hFE = f (IC )
Base-emitter saturation voltage
VCE = 5V
IC = f (VBEsat), hFE = 20
EHP00365
10 3
h FE 5
EHP00364
10 2
100 C
Ι C mA
100 C
25 C
-50 C
25 C
10 2
-50 C
10 1
5
5
10 1
10 0
5
5
10 0
10 -2
5
V 0.5
VCEsat
10 -1
5
10 0
5
10 1
mA
10 -1
10 2
ΙC
0
0.2
0.4
0.6
0.8
V
1.2
V BEsat
7
Aug-01-2002
BC846T...BC850T
h parameter he = f (IC) normalized
h parameter he = f (VCE) normalized
VCE = 5V
IC = 2mA
EHP00368
10 2
he
EHP00369
2.0
5
he
h 11e
5
1.5
VCE = 5 V
10 1
Ι C = 2 mA
h 21 e
h 12e
h 11 e
h 12 e
1.0
h 22 e
10 0 h
21e
0.5
5
h 22e
10 -1
0
10 -1
5
10 0
mA
10 1
0
10
20
V
ΙC
VCE
Noise figure F = f (VCE )
Noise figure F = f (f)
IC = 0.2mA, RS = 2k, f = 1kHz
20
F
BC 846...850
IC = 0.2mA, VCE = 5V, R S = 2k
EHP00370
20
BC 846...850
EHP00371
dB
dB
F
15
15
10
10
5
5
0
10 -1
30
5
10 0
10 1
V
0
10 -2
10 2
VCE
10 -1
10 0
10 1
kHz 10 2
f
8
Aug-01-2002
BC846T...BC850T
Noise figure F = f (IC )
Noise figure F = f (IC)
VCE = 5V, f = 120Hz
VCE = 5V, f = 1kHz
20
BC 846...850
EHP00372
20
BC 846...850
EHP00373
dB
dB
F
F
15
15
RS = 1 MΩ
100 k Ω
10 k Ω
RS = 1 MΩ
100 k Ω 10 k Ω
10
10
500 Ω
1 kΩ
5
5
500 Ω
1 kΩ
0
10 -3
10 -2
10 -1
10 0
0
10 -3
mA 10 1
10 -2
10 -1
10 0
mA 10 1
ΙC
ΙC
Noise figure F = f (IC )
VCE = 5V, f = 10kHz
20
BC 846...850
EHP00374
dB
F
15
R S = 1 MΩ
100 kΩ
10
10 k Ω
500 Ω
5
1 kΩ
0
10 -3
10 -2
10 -1
10 0
mA 10 1
ΙC
9
Aug-01-2002
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