Panasonic CNB2003 Reflective photosensor Datasheet

Reflective Photosensors (Photo Reflectors)
CNB2003
Reflective photosensor
Unit: mm
3.4
1.8
3
Input (Light
Symbol
Rating
VR
6
V
IF
50
mA
PD
75
mW
Output (Photo Collector-emitter voltage
transistor)
(Base open)
VCEO
35
V
Emitter-collector voltage
(Base open)
VECO
6
V
IC
30
mA
PC
75
mW
Operating ambient temperature
T opr
−25 to +85
°C
Storage temperature
Tstg
−40 to +100
°C
Collector power dissipation
Temperature
*2
0.7 max.
0.85
Unit
Reverse voltage
Collector current
4
0.5
1.5
emitting diode) Forward current
Power dissipation *1
1.7
2
0.7
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Chip
center
0.35
6.1±0.3
• Reflow-compatible reflective photosensor
• Ultraminiature, thin type: 2.7 mm × 3.4 mm (height: 1.5 mm)
2.7
C0.5
■ Features
0.7 max.
1
0.15
1.7
Non-contact point SW, object sensing
1: Anode
2: Cathode
3: Emitter
4: Collector
PRSMW104-003 Package
(Note) Tolerance unless otherwise specified is ±0.2
Color of rank
Note) *1: Input power derating ratio is
1.0 mW/°C at Ta ≥ 25°C.
*2: Output power derating ratio is
1.0 mW/°C at Ta ≥ 25°C.
■ Electrical-Optical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
1.2
Unit
Forward voltage
VF
IF = 20 mA
1.4
V
characteristics Reverse current
IR
VR = 3 V
10
µA
VCE = 10 V
1.0
µA
Input
Output
Collector-emitter cutoff current
characteristics (Base open)
Transfer
ICEO
IC
VCC = 2 V, IF = 4 mA, RL = 100 Ω, d = 1 mm
15.00
mA
ID
VCC = 2 V, IF = 4 mA, RL = 100 Ω
5.0
µA
Collector-emitter saturation voltage VCE(sat)
IF = 4 mA, IC = 0.5 mA
1.2
Rise time *2
tr
VCC = 2 V, IC = 10 mA
120
Fall time *2
tf
RL = 100 Ω
115
Collector current *1
characteristics Dark current
0.52
V
µs
Note) 1. Input and output are handled electrically.
2. This product is not designed to withstand radiation
*3: Rank classification
3. *1: Output current measurement
*2: Switching time
method
measurement circuit
Rank
Q
Glass plate
tr: Rise time
Evaporated Al
tf: Fall time
d = 1 mm
Sig. in
Glass plate
Evaporated Al
d = 1 mm
IF
RL
IC
VCC
Publication date: April 2004
Sig. in
50 Ω
IC (mA)
Color
Sig. out
RL
Sig.
out
VCC
tr
tf
R
S
0.52 to 1.94 1.45 to 5.40 4.00 to 15.00
Orange
White
Light blue
90%
10%
SHG00057BED
1
CNB2003
IF  V F
IC
30
20
Collector current IC (mA)
40
60
40
20
10
1
10 −1
0
20
40
60
80
0
100
0.4
0.8
1.2
1.6
1
Forward voltage VF (V)
VF  Ta
IC  VCE
102
1.4
1.0
1 mA
0.8
0.6
∆IC  Ta
IF = 10 mA
Collector current IC (mA)
10 mA
10
4 mA
2 mA
1
1 mA
10 −1
0.4
VCC = 2 V
IF = 4 mA
RL = 100 Ω
140
120
100
80
60
40
20
0.2
0
40
10 −2
10 −1
80
Ambient temperature Ta (°C)
1
tr , tf  IC
Rise time tr , fall time tf (µs)
102
10
1
10 −1
40
80
Ambient temperature Ta (°C)
120
80
100
RL = 1 kΩ
103
500 Ω
100 Ω
102
10
40
∆IC  d
104
VCE = 10 V
0
0
Ambient temperature Ta (°C)
Collector-emitter voltage VCE (V)
ICEO  Ta
103
0
−40
102
10
Relative collector current ∆IC (%)
0
−40
10 −2
−40
103
160
Ta = 25°C
IF = 50 mA
1.2
102
10
Forward current IF (mA)
Relative collector current ∆IC (%)
0
1.6
Collector-emitter cutoff current (Base open) ICEO (µA)
102
10
Ambient temperature Ta (°C)
2
VCC = 5 V
Ta = 25°C
RL = 100 Ω
d = 1 mm
Ta = 25°C
IF
50
0
−25
Forward voltage VF (V)
IC  I F
103
80
Forward current IF (mA)
Forward current IF , collector current IC (mA)
IF , IC  Ta
60
VCC = 2 V
Ta = 25°C
: tr
: tf
1
10 −2
10 −1
1
Collector current IC (mA)
SHG00057BED
10
VCC = 2 V
IF = 4 mA
80
d
60
40
20
0
0
2
4
6
Distance d (mm)
8
10
Caution for Safety
■ This product contains Gallium Arsenide (GaAs).
DANGER
GaAs powder and vapor are hazardous to human health if inhaled or
ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the product. Follow related laws and ordinances for disposal.
The product should be excluded form general industrial waste or
household garbage.
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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