CTLSH1-50M832DS SURFACE MOUNT DUAL, HIGH CURRENT LOW VF SILICON SCHOTTKY RECTIFIERS TLM832DS CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLSH150M832DS Dual, Isolated, Low VF Silicon Schottky rectifiers are designed for applications where small size and operational efficiency are the prime requirements. With a maximum power dissipation of 1.65W, and a very small package footprint (approximately equal to the SOT-23), this leadless package design is capable of dissipating up to 4 times the power of similar devices in comparable sized surface mount packages. MARKING CODE: CFX FEATURES: APPLICATIONS: • DC - DC Converters • Reverse Battery Protection • Battery Powered Portable Equipment MAXIMUM RATINGS: (TA=25°C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp<1.0ms Peak Forward Surge Current, tp=8.0ms Power Dissipation (Note 1) Operating and Storage Junction Temperature Thermal Resistance (Note 1) • High Current (IF=1.0A) • Low Forward Voltage Drop (VF=0.55V MAX @ 1.0A) • High Thermal Efficiency • Small TLM 3x2mm case SYMBOL VRRM IF IFRM IFSM PD TJ, Tstg ΘJA UNITS V A A A W °C °C/W 50 1.0 3.5 10 1.65 -65 to +150 75.8 ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IR VR=5.0V 10 IR VR=8.0V 20 IR VR=15V 50 IR UNITS μA μA μA BVR VR=50V VR=50V, TA=100°C IR=100μA VF IF=10mA 0.29 V VF IF=100mA 0.36 V VF IF=500mA 0.45 V VF IF=1.0A 0.55 V CJ VR=4.0V, f=1.0MHz IR 0.5 mA 50 mA 50 Notes: (1) FR-4 Epoxy PC Board with copper mounting pad area of V 50 pF 54mm2 R1 (23-September 2011) CTLSH1-50M832DS SURFACE MOUNT DUAL, HIGH CURRENT LOW VF SILICON SCHOTTKY RECTIFIERS TLM832DS CASE - MECHANICAL OUTLINE SUGGESTED MOUNTING PADS For Maximum Power Dissipation (Dimensions in mm) R0 PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) Anode D1 3) Anode D2 4) Anode D2 5) 6) 7) 8) Cathode Cathode Cathode Cathode D2 D2 D1 D1 MARKING CODE: CFX R1 (23-September 2011) w w w. c e n t r a l s e m i . c o m