AP3P7R0EH
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
D
▼ Simple Drive Requirement
G
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
S
BVDSS
-30V
RDS(ON)
7mΩ
ID
HBM ESD
-75A
2KV
Description
AP3P7R0E series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
G
D
S
TO-252(H)
The TO-252 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique
and suited for high current application due to the low connection
resistance.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
.
Parameter
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current, VGS @ 10V
-75
A
ID@TC=100℃
Drain Current, VGS @ 10V
-47.8
A
-300
A
59.5
W
2
W
135
mJ
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
4
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
Units
2.1
℃/W
62.5
℃/W
1
201702231
AP3P7R0EH
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-30
-
-
V
VGS=-10V, ID=-30A
-
-
7
mΩ
VGS=-4.5V, ID=-20A
-
-
15
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-5V, ID=-30A
-
55
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=-20A
-
36
57.6
nC
Qgs
Gate-Source Charge
VDS=-24V
-
10
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
15
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
42
-
ns
tr
Rise Time
ID=-30A
-
140
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
440
-
ns
-
ns
tf
Fall Time
VGS=-10V
-
300
Ciss
Input Capacitance
VGS=0V
-
4300 6880
pF
Coss
Output Capacitance
VDS=-15V
-
590
-
pF
Crss
Reverse Transfer Capacitance
-
330
-
pF
Min.
Typ.
IS=-30A, VGS=0V
-
-
-1.2
V
.
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=-30A, VGS=0V,
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
6
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board
o
4.Starting Tj=25 C , VDD=-30V , L=0.3mH , RG=25Ω
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP3P7R0EH
160
300
o
-ID , Drain Current (A)
250
-ID , Drain Current (A)
T C = 25 C
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
o
T C =150 C
- 10 V
- 7.0 V
- 6.0 V
200
- 5.0 V
150
V G = - 4.0 V
100
120
80
40
50
0
0
0
4
8
12
0
16
2
4
6
8
10
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
11
I D = -20 A
T C =25 ℃
10
I D = - 30 A
V G = -10V
9
8
.
Normalized RDS(ON)
RDS(ON) (mΩ)
2.0
1.6
1.2
7
0.8
6
0.4
5
2
4
6
8
-100
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
100
I D = - 250uA
Normalized VGS(th)
1.5
-IS(A)
10
T j =150 o C
T j =25 o C
1
1.0
0.5
0.0
0.1
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-100
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP3P7R0EH
f=1.0MHz
10
6000
-VGS , Gate to Source Voltage (V)
V DS = -24 V
I D = - 20 A
5000
8
C iss
C (pF)
4000
6
3000
4
2000
2
1000
C oss
C rss
0
0
0
20
40
60
1
80
5
9
13
17
21
25
29
33
37
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Operation in this area
limited by RDS(ON)
100
10us
-ID (A)
100us
10
.
1ms
1
10ms
DC
T C =25 o C
Single Pulse
Normalized Thermal Response (Rthjc)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.001
0
0.1
1
10
100
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
80
VG
PD (W)
60
QG
-4.5V
QGS
40
QGD
20
Charge
Q
0
0
50
100
150
T C , Case Temperature ( o C )
Fig 11. Typical Power Dissipation
Fig 12. Gate Charge Waveform
4
AP3P7R0EH
2
80
o
V DS = -5V
I D = -1mA
o
T j =25 C
T j =150 C
-ID , Drain Current (A)
Normalized BVDSS
1.6
1.2
0.8
60
40
20
0.4
0
0
-100
-50
T
0
j
50
100
0
150
1
2
3
4
5
6
-V GS , Gate-to-Source Voltage (V)
, Junction Temperature ( o C)
Fig 13. Normalized BVDSS v.s. Junction
Fig 14. Transfer Characteristics
Temperature
50
80
T j =25 o C
40
30
.
20
-4.5V
V GS = -10V
10
0
-ID , Drain Current (A)
RDS(ON) (mΩ)
60
40
20
0
0
20
40
60
80
100
-I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
120
25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 16. Drain Current v.s. Case Temperature
5
AP3P7R0EH
MARKING INFORMATION
Part Number
3P7R0E
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6