AO8403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO8403 is Pb-free (meets ROHS & Sony 259 specifications). AO8403L is a Green Product ordering option. AO8403 and AO8403L are electrically identical. VDS (V) = -20V ID = -4 A (VGS = -4.5V) RDS(ON) < 42mΩ (VGS = -4.5V) RDS(ON) < 52mΩ (VGS = -2.5V) RDS(ON) < 70mΩ (VGS = -1.8V) ESD Rating: 3000V HBM D TSSOP-8 Top View D S S G 1 2 3 4 8 7 6 5 D S S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±8 V -30 1.5 W 1 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A -3.5 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V -4 TA=25°C Power Dissipation A Maximum -20 RθJA RθJL Typ 64 89 53 Max 83 120 70 Units °C/W °C/W °C/W AO8403 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage On state drain current ID(ON) Conditions Min ID=-250µA, VGS=0V VDS=-16V, VGS=0V -20 VDS=0V, VGS=±4.5V VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V -0.3 -25 gFS VSD IS Static Drain-Source On-Resistance TJ=125°C VGS=-2.5V, ID=-4A VGS=-1.8V, ID=-3A VDS=-5V, ID=-4A Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current 8 -0.55 mΩ 56 16 70 -0.78 -1 -2.2 V A 1750 pF pF VGS=-4.5V, VDS=-10V, ID=-4A 17.2 1.3 IF=-4A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs -1 mΩ 160 6.5 VGS=-4.5V, VDS=-10V, RL=2.5Ω, RGEN=3Ω µA µA 52 VGS=0V, VDS=0V, f=1MHz Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time ±1 ±10 45 Rg Turn-On DelayTime µA 42 60 1450 205 tD(on) tr tD(off) tf trr Qrr -1 -5 35 48 VGS=0V, VDS=-10V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge Units A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Gate resistance Max V TJ=55°C VGS=-4.5V, ID=-4A RDS(ON) Typ mΩ S pF Ω 21 4.5 9.5 17 94 35 31 13.8 nC nC nC ns ns ns ns ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev1: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AO8403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 10 -4.5V -8V VDS=-5V -3.0V 20 8 15 6 -2.5V -ID(A) -ID (A) -2.0V 10 125°C 4 VGS=-1.5V 5 2 0 25°C 0 0 1 2 3 4 5 0 0.5 80 Normalized On-Resistance RDS(ON) (mΩ) 1.5 2 1.6 VGS=-1.8V 60 VGS=-2.5V 40 VGS=-4.5V 20 ID=-4A, VGS=-2.5V 1.4 ID=-2A, VGS=-1.8V 1.2 ID=-4A, VGS=-4.5V 1.0 0.8 0 2 4 6 8 10 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1E+01 90 1E+00 ID=-4A 75 100 125 150 175 125°C 1E-01 -IS (A) 70 60 125°C 50 50 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 80 RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 25°C 1E-02 1E-03 1E-04 40 25°C 1E-05 30 1E-06 20 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO8403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2400 5 VDS=-10V ID=-4A 2000 Capacitance (pF) -VGS (Volts) 4 3 2 1 Ciss 1600 1200 800 Coss 400 Crss 0 0 0 5 10 15 20 0 -Qg (nC) Figure 7: Gate-Charge Characteristics TJ(Max)=150°C TA=25°C 40 100µs 1.0 10ms 1s 10s 20 10 0.1s DC 0 0.001 0.1 1 10 100 -VDS (Volts) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 20 30 1ms 10 15 TJ(Max)=150°C TA=25°C 10µs RDS(ON) 10.0 limited 0.1 10 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) -ID (Amps) 100.0 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000