FDMS0308CS N-Channel PowerTrench® SyncFETTM 30 V, 42 A, 3 m: Features General Description Max rDS(on) = 3.0 m: at VGS = 10 V, ID = 21 A The FDMS0308CS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Max rDS(on) = 3.5 m: at VGS = 4.5 V, ID = 17 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design Applications 100% UIL tested Synchronous Rectifier for DC/DC Converters RoHS Compliant Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Desktop Bottom Top Pin 1 S D D D S S G D 5 4 G D 6 3 D 7 2 S D 8 1 S S D Power 56 MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 42 113 (Note 1a) -Pulsed 22 A 150 Single Pulse Avalanche Energy EAS Ratings 30 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 98 65 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RTJC Thermal Resistance, Junction to Case RTJA Thermal Resistance, Junction to Ambient 1.9 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS0308CS Device FDMS0308CS ©2010 Fairchild Semiconductor Corporation FDMS0308CS Rev.C Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS0308CS N-Channel PowerTrench® SyncFETTM August 2010 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient 30 V ID = 10 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 PA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA 3.0 V 14 mV/°C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25 °C -5 VGS = 10 V, ID = 21 A 1.9 rDS(on) StaticDrain to Source On Resistance VGS = 4.5 V, ID = 17 A 2.5 3.5 VGS = 10 V, ID = 21 A, TJ = 125 °C 2.5 3.8 VDS = 5 V, ID = 21 A 300 gFS Forward Transconductance 1.2 1.6 mV/°C 3.0 m: S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 3175 4225 pF 1175 1565 pF 110 165 pF 1.3 2.6 : 14 25 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg VDD = 15 V, ID = 21 A, VGS = 10 V, RGEN = 6 : 6 12 ns 35 56 ns 5 10 ns Total Gate Charge VGS = 0 V to 10 V 47 66 nC Qg Total Gate Charge 31 nC Gate to Source Gate Charge VGS = 0 V to 4.5 V VDD = 15 V, ID = 21 A 22 Qgs 8.5 nC Qgd Gate to Drain “Miller” Charge 4.9 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2 A (Note 2) 0.43 0.7 VGS = 0 V, IS = 21 A (Note 2) 0.75 1.2 IF = 21 A, di/dt = 300 A/ Ps V 35 56 ns 41 67 nC Notes: 1. RTJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%. 3. EAS of 98 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 14 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 21 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FDMS0308CS Rev.C 2 www.fairchildsemi.com FDMS0308CS N-Channel PowerTrench® SyncFETTM Electrical Characteristics TA = 25 °C unless otherwise noted 150 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3.5 VGS = 3.5 V 120 ID, DRAIN CURRENT (A) VGS = 10 V VGS = 4.5 V 90 VGS = 4 V VGS = 3 V 60 30 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 0 0.0 0.5 1.0 1.5 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 3.0 VGS = 3 V 2.5 VGS = 3.5 V 2.0 VGS = 4 V 1.5 VGS = 4.5 V 1.0 VGS = 10 V 0.5 2.0 0 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics 120 150 10 ID = 21 A VGS = 10 V 1.5 rDS(on), DRAIN TO 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 -50 SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 90 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 IS, REVERSE DRAIN CURRENT (A) VDS = 5 V 90 TJ = 125 oC 60 25 oC 30 TJ = -55 oC 2.0 2.5 3.0 3.5 4 TJ = 125 oC 2 TJ = 25 oC 4 6 8 10 Figure 4. On-Resistance vs Gate to Source Voltage 120 1.5 6 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80Ps DUTY CYCLE = 0.5% MAX 0 1.0 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 8 2 150 TJ = ID = 21 A 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) 60 ID, DRAIN CURRENT (A) 200 100 VGS = 0 V 10 TJ = 125 oC 1 TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 4.0 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMS0308CS Rev.C 3 1.2 www.fairchildsemi.com FDMS0308CS N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted 5000 Ciss ID = 21 A 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 20 V VDD = 10 V 6 VDD = 15 V 4 Coss 1000 Crss 2 100 f = 1 MHz VGS = 0 V 0 0 10 20 30 40 60 0.1 50 Figure 7. Gate Charge Characteristics TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC VGS = 10 V 90 VGS = 4.5 V 60 30 o RTJC = 1.9 C/W Limited by Package 1 0.01 0.1 1 10 0 25 100 300 P(PK), PEAK TRANSIENT POWER (W) 10 ms 0.1 100 ms 1s SINGLE PULSE TJ = MAX RATED 10 s RTJA = 125 oC/W DC TA = 25 oC 0.01 0.01 0.1 1 10 100 200 150 VGS = 10 V 1000 100 10 SINGLE PULSE RTJA = 125 oC/W 1 TA = 25 oC 0.5 -4 -3 -2 10 10 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area FDMS0308CS Rev.C 125 10000 1 ms THIS AREA IS LIMITED BY rDS(on) 100 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 Ps 10 75 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 200 100 50 o tAV, TIME IN AVALANCHE (ms) 1 30 120 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 Figure 8. Capacitance vs Drain to Source Voltage 40 ID, DRAIN CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 4 www.fairchildsemi.com FDMS0308CS N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZTJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 0.001 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA SINGLE PULSE o RTJA = 125 C/W 0.0001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMS0308CS Rev.C 5 www.fairchildsemi.com FDMS0308CS N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted SyncFET Schottky body diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS0308CS. -2 IDSS, REVERSE LEAKAGE CURRENT (A) 25 CURRENT (A) 20 15 di/dt = 300 A/Ps 10 5 0 -5 0 30 60 90 120 150 TJ = 125 oC TJ = 100 oC -3 10 -4 10 TJ = 25 oC -5 10 -6 10 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) TIME (ns) Figure 14. FDMS0308CS SyncFET body diode reverse recovery characteristic FDMS0308CS Rev.C 10 Figure 15. SyncFET body diode reverses leakage versus drain-source voltage 6 www.fairchildsemi.com FDMS0308CS N-Channel PowerTrench® SyncFETTM Typical Characteristics (continued) FDMS0308CS N-Channel PowerTrench® SyncFETTM Dimensional Outline and Pad Layout FDMS0308CS Rev.C 7 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 FDMS0308CS Rev.C 8 www.fairchildsemi.com FDMS0308CS N-Channel PowerTrench® SyncFETTM TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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