Mitsubishi CM75TU-34KA Igbt modules high power switching use Datasheet

MITSUBISHI IGBT MODULES
CM75TU-34KA
HIGH POWER SWITCHING USE
CM75TU-34KA
● IC ..................................................................... 75A
● VCES .......................................................... 1700V
● Insulated
Type
● 6-elements in a pack
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
107
90 ±0.25
23
12
4–φ5.5
MOUNTING HOLES
CM
G
E
12
11
G
E
V
12
23
21.7
GuN
EuN
GvN
EvN
GwN
EwN
E
G
E
W
23
11
12
21.7
0.5
G
48.5
11 14.4
21.7
E
3.75
G
U
5–M5NUTS
Tc measured point 2.8
11
21.7
E
+1
29 –0.5
0.8
11
Tc measured point
8.1
7.1
4
LABEL
P
26
102
80 ±0.25
11
G
17
P
N
GuP
EuP
GvP
EvP
GwP
EwP
(4)
3.75
12
GUP
EUP
GVP
EVP
U
V
GUN
EUN
GVN
EVN
GWP
EWP
W
GWN
EWN
N
CIRCUIT DIAGRAM
Feb. 2009
MITSUBISHI IGBT MODULES
CM75TU-34KA
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
—
Torque strength
—
Weight
Conditions
G-E Short
C-E Short
TC = 25°C
Pulse
TC = 25°C
Pulse
TC = 25°C
Ratings
1700
±20
75
150
75
150
660
–40 ~ +150
–40 ~ +125
3500
2.5 ~ 3.5
2.5 ~ 3.5
680
(Note 2)
(Note 2)
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M5 screw
Typical value
Unit
V
V
A
A
W
°C
°C
Vrms
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Parameter
Test conditions
Limits
Typ.
—
Max.
1
Unit
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
Min.
—
VGE(th)
Gate-emitter threshold voltage
IC = 7.5mA, VCE = 10V
4
5.5
7
V
IGES
Gate leakage current
±VGE = VGES, VCE = 0V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.2
3.8
—
—
—
340
—
—
—
—
—
5.3
—
2.2
—
—
0.09
—
0.5
4.0
—
10.5
1.8
0.55
—
100
100
400
800
200
—
4.6
—
0.19
0.35
—
0.13*3
µA
VCE(sat)
Collector-emitter saturation voltage
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (Note 1)
Qrr (Note 1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
VEC(Note 1)
Emitter-collector voltage
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
Thermal resistance*1
Contact thermal resistance
Thermal resistance
Tj = 25°C
Tj = 125°C
IC = 75A, VGE = 15V
VCE = 10V
VGE = 0V
VCC = 1000V, IC = 75A, VGE = 15V
VCC = 1000V, IC = 75A
VGE = ±15V
RG = 4.2Ω, Inductive load
IE = 75A
IE = 75A, VGE = 0V, Tj = 25°C
IE = 75A, VGE = 0V, Tj = 125°C
IGBT part (1/6 module)
FWDi part (1/6 module)
Case to heat sink, Thermal compound applied*2 (1/6 module)
Case temperature measured point is just under the chips
mA
V
nF
nC
ns
ns
µC
V
V
K/W
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
Feb. 2009
2
MITSUBISHI IGBT MODULES
CM75TU-34KA
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
TRANSFER CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
150
12
15
14
100
COLLECTOR CURRENT (A)
VGE = 20V
125
10
75
9
50
8
25
0
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
150
11
0
2
4
6
8
100
75
50
25
0
4
8
12
16
20
COLLECTOR-EMITTER VOLTAGE VCE (V)
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
6
VGE = 15V
Tj = 25°C
5
Tj = 125°C
4
3
2
1
0
0
20
40
60
80 100 120 140
Tj = 25°C
8
6
IC = 150A
4
IC = 75A
2
0
IC = 30A
6
8
10
12
14
16
18
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
20
102
CAPACITANCE Cies, Coes, Cres (nF)
Tj = 25°C
7
5
3
2
102
7
5
3
2
101
10
COLLECTOR CURRENT IC (A)
103
EMITTER CURRENT IE (A)
VCE = 10V
Tj = 25°C
Tj = 125°C
125
0
10
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
COLLECTOR CURRENT IC (A)
Tj = 25°C
1
2
3
4
7
5
3
2
101
Cies
7
5
3
2
100
7
5
3
2
Coes
VGE = 0V
Cres
10–1 –1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
5
COLLECTOR-EMITTER VOLTAGE VCE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
Feb. 2009
3
MITSUBISHI IGBT MODULES
CM75TU-34KA
HIGH POWER SWITCHING USE
REVERSE RECOVERY TIME trr (ns)
REVERSE RECOVERY CURRENT lrr (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
SWITCHING TIMES (ns)
104
7
5
3
2
tf
103
7
5
3
2
td(off)
102
7
5
Conditions:
3
2 VCC = 1000V
101
7
5
3
2
VGE = ±15V
RG = 4.2Ω
Tj = 125°C
Inductive load
100 0
10
2
3
td(on)
tr
5 7 101
2
3
5 7 102
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
7 Conditions:
5 VCC = 1000V
VGE = ±15V
3 RG = 4.2Ω
2 Tj = 25°C
Inductive load
102
Irr
7
5
trr
3
2
101 0
10
COLLECTOR CURRENT IC (A)
2
3
10–3
GATE-EMITTER VOLTAGE VGE (V)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth (j–c) (ratio)
10–1
7
5
3
2
10–2
10–2
7
5
3
2
20
3
2
7
5
3
2
7
5
3
2
Single Pulse
TC = 25°C
5 7 102
3
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
101
7 IGBT part:
5 Per unit base = Rth(j–c) = 0.19K/W
3 FWDi part:
2 Per unit base = Rth(j–c) = 0.35K/W
100
10–1
2
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
7
5
3
2
5 7 101
10–3
10–5 2 3 5 710–4 2 3 5 7 10–3
IC = 75A
16
VCC = 1000V
12
8
4
0
TIME (s)
VCC = 800V
0
100
200
300
400
500
GATE CHARGE QG (nC)
Feb. 2009
4
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