Ordering number : ENA1456A ECH8671 P-Channel Power MOSFET http://onsemi.com –12V, –3.5A, 77mΩ, Dual ECH8 Features • • • 1.8V drive Composite type, facilitating high-density mounting Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP PD Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature PT Tch Storage Temperature Tstg Unit --12 V ±10 V --3.5 A --30 A When mounted on ceramic substrate (1200mm2×0.8mm) 1unit 1.3 W When mounted on ceramic substrate (1200mm2×0.8mm) 1.5 W 150 °C --55 to +150 °C PW≤10μs, duty cycle≤1% This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7011A-001 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ECH8671-TL-H Top View Packing Type : TL 0.25 2.9 Marking 0.15 8 TS 5 LOT No. 2.3 TL 4 1 0.65 Electrical Connection 0.3 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 0.07 0.9 0.25 2.8 0 to 0.02 Bottom View 8 7 6 5 1 2 3 4 ECH8 Semiconductor Components Industries, LLC, 2013 July, 2013 60612 TKIM/42209PE MSIM TC-00001907 No. A1456-1/7 ECH8671 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions V(BR)DSS IDSS ID=--1mA, VGS=0V VDS=--12V, VGS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=--6V, ID=--1mA VDS=--6V, ID=--1.5A Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--1.5A, VGS=--4.5V ID=--1A, VGS=--2.5V ID=--0.5A, VGS=--1.8V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Ratings min typ Unit max --12 V --0.4 2.7 --10 μA ±10 μA --1.3 4.6 V S 59 77 mΩ 90 126 mΩ 145 215 mΩ 330 pF 110 pF Crss 88 pF Turn-ON Delay Time td(on) 7.1 ns Rise Time tr td(off) 30 ns 31 ns Turn-OFF Delay Time Fall Time Total Gate Charge tf Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--6V, f=1MHz See specified Test Circuit. VDS=--6V, VGS=--4.5V, ID=--3.5A 32 ns 3.9 nC 0.6 nC 1.1 IS=--3.5A, VGS=0V --0.85 nC --1.2 V Switching Time Test Circuit 0V --4.5V VDD= --6V VIN ID= --1.5A RL=4Ω VIN D PW=10μs D.C.≤1% VOUT G ECH8671 P.G 50Ω S Ordering Information Device ECH8671-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1456-2/7 ECH8671 ID -- VDS --1 .8V --5.0 --1.5V --0.5 --2.0 --1.5 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 0 --1.0 160 ID= --0.5A --1A 100 --1.5A 80 60 40 20 0 --1 --2 --3 --4 --5 --6 --7 Gate-to-Source Voltage, VGS -- V 25 = -- °C Ta 2 1.0 °C 75 C 25° 7 5 3 2 0.1 7 --0.01 180 5A 140 120 A = --1.0 V, I D --2.5 V GS= 100 = --1.5A 4.5V, I D V GS= -- 80 60 40 20 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 2 20 40 60 80 100 120 140 160 IT14575 3 2 --1.0 7 5 3 2 --0.1 7 5 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V --1.1 IT14577 Ciss, Coss, Crss -- VDS 1000 VDD= --6V VGS= --4.5V 3 0 VGS=0V --0.01 --0.3 5 7 --10 IT14576 SW Time -- ID 5 --20 IS -- VSD 3 2 2 --3.0 IT14573 = --0. 8V, I D . 1 -= VGS 160 --10 7 5 Source Current, IS -- A 3 --2.5 Ambient Temperature, Ta -- °C 10 7 5 --2.0 200 0 --60 --40 --8 VDS= --6V 2 --1.5 RDS(on) -- Ta IT14574 | yfs | -- ID 3 --1.0 220 180 120 --0.5 Gate-to-Source Voltage, VGS -- V Ta=25°C 140 0 IT14572 RDS(on) -- VGS 200 25° C --0.5 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --2.5 5°C 25° C --25 °C --0.1 220 Forward Transfer Admittance, | yfs | -- S --3.0 Ta= 7 0 Drain-to-Source Voltage, VDS -- V f=1MHz 7 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns --3.5 --1.0 VGS= --1.2V 0 --4.0 --25 °C --1.0 --4.5 Ta= 75° C Drain Current, ID -- A --1.5 0 VDS= --10V --5.5 --4. 5 --2.0 ID -- VGS --6.0 V --10V --8V --2.5 Drain Current, ID -- A --3.5V --2.5 V --3.0 100 7 5 td(off) 3 tf 2 tr 10 td(on) 7 Ciss 3 2 Coss 100 5 2 --0.01 Crss 7 3 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT14578 5 0 --2 --4 --6 --8 --10 Drain-to-Source Voltage, VDS -- V --12 IT14579 No. A1456-3/7 ECH8671 VGS -- Qg 7 5 3 2 VDS= --6V ID= --3A --4.0 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Total Gate Charge, Qg -- nC PD -- Ta 4.5 IT14580 ID= --3.5A DC op era tio --1.0 7 5 3 2 --0.1 7 5 3 2 PW≤10μs 10 0μ 1m s s 10 10 ms 0m s IDP= --30A n( Ta = 25 °C ) Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (1200mm2×0.8mm) 1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT14638 When mounted on ceramic substrate (1200mm2×0.8mm) 1.5 1.4 1.3 1.2 1.0 al t To di 0.8 n t io ni 0.6 at ip 1u ss Allowable Power Dissipation, PD -- W 1.6 4.0 --10 7 5 3 2 ASO 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14639 No. A1456-4/7 ECH8671 Embossed Taping Specification ECH8671-TL-H No. A1456-5/7 ECH8671 Outline Drawing ECH8671-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1456-6/7 ECH8671 Note on usage : Since the ECH8671 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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