BC856W...BC860W PNP Silicon AF Transistors For AF input stages and driver applications 3 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W (NPN) Pin Configuration VSO05561 Type Marking BC856AW 3As 1=B 2=E 3=C SOT323 BC856BW 3Bs 1=B 2=E 3=C SOT323 BC857AW 3Es 1=B 2=E 3=C SOT323 BC857BW 3Fs 1=B 2=E 3=C SOT323 BC857CW 3Gs 1=B 2=E 3=C SOT323 BC858AW 3Js 1=B 2=E 3=C SOT323 BC858BW 3Ks 1=B 2=E 3=C SOT323 BC858CW 3Ls 1=B 2=E 3=C SOT323 BC859AW 4As 1=B 2=E 3=C SOT323 BC859BW 4Bs 1=B 2=E 3=C SOT323 BC859CW 4Cs 1=B 2=E 3=C SOT323 BC860BW 4Fs 1=B 2=E 3=C SOT323 BC860CW 4Gs 1=B 2=E 3=C SOT323 1 Package Dec-11-2001 BC856W...BC860W Maximum Ratings Parameter Symbol BC856W BC857W BC858W Unit BC860W BC859W Collector-emitter voltage VCEO 65 45 30 V Collector-base voltage VCBO 80 50 30 Collector-emitter voltage VCES 80 50 30 Emitter-base voltage VEBO 5 5 5 DC collector current IC 100 mA Peak collector current ICM 200 mA Peak base current IBM 200 Peak emitter current IEM 200 Total power dissipation, TS = 124 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point 1) 105 RthJS K/W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BC856W 65 - - BC857/860W 45 - - BC858/859W 30 - - BC856W 80 - - BC857/860W 50 - - BC858/859W 30 - - Collector-base breakdown voltage IC = 10 µA, IE = 0 V V(BR)CEO V(BR)CBO 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Dec-11-2001 BC856W...BC860W Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 V V(BR)CES BC856W 80 - - BC857/860W 50 - - BC858/859W 30 - - V(BR)EBO 5 - - ICBO - - 15 nA ICBO - - 5 µA Emitter-base breakdown voltage IE = 1 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 10 µA, VCE = 5 V hFE -group A - 140 - hFE -group B - 250 - hFE -group C - 480 - hFE -group A 125 180 250 hFE -group B 220 290 475 hFE -group C 420 520 800 hFE DC current gain 1) IC = 2 mA, VCE = 5 V - hFE Collector-emitter saturation voltage1) mV VCEsat IC = 10 mA, IB = 0.5 mA - 75 300 IC = 100 mA, IB = 5 mA - 250 650 IC = 10 mA, IB = 0.5 mA - 700 - IC = 100 mA, IB = 5 mA - 850 - IC = 2 mA, VCE = 5 V 600 650 750 IC = 10 mA, VCE = 5 V - - 820 Base-emitter saturation voltage 1) VBEsat Base-emitter voltage 1) VBE(ON) 1) Pulse test: t ≤=300µs, D = 2% 3 Dec-11-2001 BC856W...BC860W Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. fT - 250 - MHz Ccb - 3 5 pF Ceb - 10 15 AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz h11e hFE -gr.A hFE -gr.B hFE -gr.C Open-circuit reverse voltage transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C Short-circuit forward current transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz hFE -gr.A hFE -gr.B hFE -gr.C Noise figure IC = 200 µA, VCE = 5 V, RS = 2 k, BC856W f = 1 kHz, f = 200 Hz BC857W - 2.7 4.5 8.7 - 10-4 h12e - 1.5 2 3 - h21e - 200 330 600 - - 18 30 60 - 10 - 1 1 - 4 4 0.11 h22e F k S dB BC858W Noise figure IC = 200 µA, VCE = 5 V, RS = 2 k, f = 1 kHz, f = 200 Hz F BC859W BC860W Equivalent noise voltage IC = 200 µA, VCE = 5 V, RS = 2 k, f = 10 ... 50 Hz Vn µV BC860W 4 Dec-11-2001 BC856W...BC860W Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO) Total power dissipation Ptot = f (TS ) 300 C CB0 ( C EB0 ) mW 12 pF BC 856...860 EHP00376 P tot 10 200 8 150 6 100 4 50 2 0 0 20 40 60 80 120 °C 100 0 10 -1 150 C EBO C CBO 5 10 0 V TS VCB0 Permissible pulse load Transition frequency fT = f (IC) Ptotmax / PtotDC = f (tp ) VCE = 5V Ptot max 5 Ptot DC tp D= T EHP00378 10 3 EHP00377 10 3 10 1 (VEB0 ) MHz tp fT 5 T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 10 2 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 1 10 -1 10 0 tp 5 5 10 0 5 10 1 mA ΙC 10 2 Dec-11-2001 BC856W...BC860W Collector cutoff current ICBO = f (TA) Collector-emitter saturation voltage VCB = 30V IC = f (VCEsat), h FE = 20 EHP00381 10 4 nA mA ΙC Ι CB0 EHP00380 10 2 10 3 100 C 25 C -50 C 5 10 10 1 max 2 5 5 typ 10 1 5 10 10 0 5 0 5 10 -1 0 50 100 C 10 -1 150 0 0.1 0.2 0.4 0.3 TA DC current gain hFE = f (IC ) Base-emitter saturation voltage VCE = 5V IC = f (VBEsat), hFE = 20 EHP00382 10 3 V 0.5 VCEsat EHP00379 10 2 mA h FE 5 ΙC 100 C 100 C 25 C -50C 25 C 10 2 -50 C 10 1 5 5 10 1 10 0 5 5 10 0 10 -2 5 10 -1 5 10 0 5 10 1 10 -1 mA 10 2 ΙC 6 0 0.2 0.4 0.6 0.8 V 1.2 V BEsat Dec-11-2001 BC856W...BC860W h parameter he = f (IC) normalized h parameter he = f (VCE) normalized VCE = 5V IC = 2mA 10 2 he BC 856...860 EHP00383 2.0 5 BC 856...860 he Ι C = 2 mA h 11 1.5 VCE = 5 V h 11e 10 1 EHP00384 5 1.0 h 12e h12 10 0 h 22 0.5 5 h 21e h 22e 0 10 -1 10 -1 5 10 0 mA 10 1 0 10 20 V ΙC VCE Noise figure F = f (VCE ) Noise figure F = f (f) IC = 0.2mA, RS = 2k, f = 1kHz 20 dB BC 856...860 30 IC = 0.2mA, VCE = 5V, R S = 2k EHP00385 20 BC 856...860 EHP00386 dB F F 15 15 10 10 5 5 0 10 -1 5 10 0 5 10 1 V 0 10 -2 10 2 VCE 10 -1 10 0 10 1 kHz 10 2 f 7 Dec-11-2001 BC856W...BC860W Noise figure F = f (IC ) Noise figure F = f (IC) VCE = 5V, f = 120Hz VCE = 5V, f = 1kHz 20 BC 856...860 EHP00387 20 BC 856...860 EHP00388 dB dB F F 15 15 R S = 1 MΩ 100 kΩ 10 k Ω R S = 1 MΩ 100 k Ω 10 kΩ 10 10 500 Ω 1 kΩ 5 5 1 kΩ 0 10 -3 10 -2 10 -1 10 0 500 Ω 0 10 -3 mA 10 1 ΙC 10 -2 10 -1 10 0 mA 10 1 ΙC Noise figure F = f (IC ) VCE = 5V, f = 10kHz 20 BC 856...860 EHP00389 dB F 15 R S = 1 MΩ 100 k Ω 10 500 Ω 10 kΩ 5 1 kΩ 0 10-3 10 -2 10 -1 10 0 mA 10 1 ΙC 8 Dec-11-2001