BYW52-BYW56 2.0A Axial Leaded Silicon Rectifier Features • • • • • • • Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC B A A C D DO-15 Mechanical Data · Case: DO-15 Sintered glass case · Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 · Polarity: Color band denotes cathode end · Mounting Position: Any · Weight: approx. 369 mg Parameter Peak forward surge current Min Max A 25.40 ¾ B 5.50 7.62 C 0.686 0.889 D 2.60 3.60 All Dimensions in mm Maximum Ratings and Electrical Characteristics Reverse voltage = Repetitive peak reverse voltage Dim Test condition see electrical characteristics @ TA = 25°C unless otherwise specified Part Symbol Value Unit BYW52 VR = VRRM 200 V BYW53 VR = VRRM 400 V BYW54 VR = VRRM 600 V BYW55 VR = VRRM 800 V BYW56 VR = VRRM 1000 V IFSM 50 A tp = 10 ms, half sinewave Repetitive peak forward current IFRM 12 A Average forward current ϕ = 180 ° IFAV 2 A Pulse avalanche peak power tp = 20 µs half sine wave, Tj = 175 °C PR 1000 W Typ. Max Forward voltage Parameter IF = 1 A Test condition Symbol VF 0.9 1.0 V Reverse current VR = VRRM IR 0.1 1 µA VR = VRRM, Tj = 100 °C IR 5 10 µA Breakdown voltage IR = 100 µA, tp/T = 0.01, tp = 0.3 ms V(BR) 1600 V Diode capacitance VR = 4 V, f = 1 MHz CD Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr IF = 1 A, di/dt = 5 A/µs, VR = 50 V trr 4 µs Reverse recovery charge IF = 1 A, di/dt = 5 A/µs Qrr 200 nC 1 of 3 Min 18 Unit pF 4 µs 120 l l 10.000 – Forward Current (A) 100 80 TL= constant 60 Tj = 175 °C 20 0 0 5 10 15 20 25 0.010 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 30 l - Lead Length ( mm ) 94 9101 V F – Forward Voltage ( V ) 16350 Figure 1. Typ. Thermal Resistance vs. Lead Length Figure 2. Forward Current vs. Forward Voltage I FAV –Average Forward Current( A ) V R = VRRM half sinewave 2.0 RthJA = 45 K/W l = 10 mm 1.5 1.0 0.5 RthJA = 100 K/W PCB: d = 25 mm 0.0 0 20 40 60 300 200 150 PR–Limit @80 % VR 100 50 0 25 50 75 100 125 150 175 Tj – Junction Temperature ( °C ) Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature 1000 40 CD – Diode Capacitance ( pF ) V R = VRRM I R – Reverse Current (A) PR–Limit @100 % VR 250 16353 Figure 3. Max. Average Forward Current vs. Ambient Temperature 100 10 1 25 V R = VRRM 350 80 100 120 140 160 180 Tamb – Ambient Temperature (°C ) 16351 400 PR – Reverse Power Dissipation ( mW ) 2.5 16352 Tj = 25 °C 0.100 F 40 1.000 I RthJA Therm. Resist. Junction/Ambient (K/W) Typical Characteristics (Tamb = 25 °C unless otherwise specified) 50 75 100 125 150 16354 Figure 4. Reverse Current vs. Junction Temperature f = 1 MHz 30 25 20 15 10 5 0 0.1 175 Tj – Junction Temperature (°C ) 35 1.0 10.0 V R – Reverse Voltage ( V ) 100.0 Figure 6. Diode Capacitance vs. Reverse Voltage 2of3 Zthp–Thermal Resistance for PulseCond.(K/W) 1000 VRRM = 1000 V, RthJA = 100K/W 100 94 9178 tp/T = 0.5 10 tp/T = 0.2 Tamb = 25°C tp/T = 0.1 Tamb = 45°C tp/T = 0.05 Tamb = 60 °C tp/T = 0.02 Tamb = 70°C tp/T = 0.01 1 10–5 10–4 Tamb = 100°C 10–3 10–2 10–1 10 0 10 1 tp – Pulse Length ( s ) Figure 7. Thermal Response 3of3 10 0 10 1 102 I FRM – Repetitive Peak Forward Current ( A )