Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WLL applications. • Typical Single- Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1800 mA, Pout = 35 Watts Avg., f = 2660 MHz, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz, PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 14.6 dB Drain Efficiency — 22.6% ACPR @ 885 kHz Offset — - 47.8 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2650 MHz, 160 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. MRF6P27160HR6 2600- 2700 MHz, 35 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFET CASE 375D - 05, STYLE 1 NI - 1230 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +68 Vdc Gate- Source Voltage VGS - 0.5, +12 Vdc Storage Temperature Range Tstg - 65 to +150 °C TC 150 °C TJ 225 °C Symbol Value (2,3) Unit Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 79°C, 160 W CW Case Temperature 71°C, 35 W CW RθJC 0.29 0.31 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2005 - 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor MRF6P27160HR6 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1C (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) III (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 250 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (3) (VDD = 28 Vdc, ID = 1800 mAdc, Measured in Functional Test) VGS(Q) 2 2.8 4 Vdc Drain- Source On - Voltage (1) (VGS = 10 Vdc, ID = 2.2 Adc) VDS(on) — 0.21 0.3 Vdc Crss — 2.8 — pF Characteristic Off Characteristics (1) On Characteristics Dynamic Characteristics (1,2) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1800 mA, Pout = 35 W Avg. N - CDMA, f = 2660 MHz, Single- Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps 13 14.6 16 dB Drain Efficiency ηD 20 22.6 — % ACPR — - 47.8 - 45 dBc IRL — - 13 -9 dB Adjacent Channel Power Ratio Input Return Loss 1. Each side of device measured separately. 2. Part internally matched both on input and output. 3. Measurement made with device in push - pull configuration. MRF6P27160HR6 2 RF Device Data Freescale Semiconductor B1 VBIAS Z35 R1 + + C7 C6 C5 C4 Z37 C3 C15 C16 C17 + + C18 C19 VSUPPLY Z17 Z19 Z21 Z23 Z25 Z27 Z29 Z5 Z3 RF INPUT Z1 Z7 Z9 Z11 Z13 Z31 C13 Z15 RF OUTPUT Z32 Z33 C1 DUT Z4 Z2 Z6 Z8 Z10 Z12 Z14 C2 Z16 Z18 Z20 Z22 Z24 Z26 Z28 Z30 C14 B2 VBIAS Z34 R2 + + C12 C11 Z1 Z2, Z30 Z3, Z31 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z18, Z19 Z36 C10 C9 C20 C8 Z20, Z21 Z22, Z23 Z24, Z25 Z26, Z27 Z28, Z29 Z32 Z33 Z34, Z35 Z36, Z37 PCB 1.011″ x 0.139″ Microstrip 0.150″ x 0.070″ Microstrip 1.500″ x 0.086″ Microstrip 0.050″ x 0.230″ Microstrip 0.170″ x 0.080″ Microstrip 0.144″ x 0.340″ Microstrip 0.400″ x 0.210″ Microstrip 0.280″ x 0.710″ Microstrip 0.461″ x 0.490″ Microstrip 0.357″ x 0.766″ Microstrip 0.284″ x 0.415″ Microstrip C21 C22 + + C23 C24 VSUPPLY 0.160″ x 0.760″ Microstrip 0.240″ x 0.150″ Microstrip 0.170″ x 0.420″ Microstrip 0.260″ x 0.080″ Microstrip 0.040″ x 0.258″ Microstrip 0.622″ x 0.139″ Microstrip 0.346″ x 0.081″ Microstrip 0.801″ x 0.050″ Microstrip 0.460″ x 0.095″ Microstrip Arlon GX - 0300- 5022, 0.030″, εr = 2.5 Figure 1. MRF6P27160HR6 Test Circuit Schematic Table 5. MRF6P27160HR6 Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2 Beads, Surface Mount 2743019447 Fair- Rite C1, C2 5.6 pF Chip Capacitors ATC100B5R6CT500XT ATC C3, C8, C15, C20 3.3 pF Chip Capacitors ATC100B3R3CT500XT ATC C4, C9 0.01 μF Chip Capacitors C1825C103J1RAC Kemet C5, C10 2.2 μF, 50 V Chip Capacitors C1825C225J5RAC Kemet C6, C11 22 μF, 25 V Tantalum Chip Capacitors T491D226K025AT Kemet C7, C12 47 μF, 16 V Tantalum Chip Capacitors T491D476K016AT Kemet C13, C14 4.3 pF Chip Capacitors ATC100B4R3CT500XT ATC C16, C17, C21, C22 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata C18, C23 47 μF, 50 V Electrolytic Capacitors EMVY500ADA470MF80G Chemi- Con C19, C24 330 μF, 63 V Electrolytic Capacitors EMVY630GTR331MMH0S Chemi- Con R1, R2 3.3 W, 1/3 W Chip Resistors CRCW121003R3FKEA Vishay MRF6P27160HR6 RF Device Data Freescale Semiconductor 3 C17 C7 C6 R1 B1 + C18 C15 C3 - C16 C5* C4* C19 C1 C13 CUT OUT AREA C10* C9* C14 MRF6P27160H Rev 5 C20 C24 C21 - C2 C8 R2 C12 C11 *Stacked C23 + B2 C22 Figure 2. MRF6P27160HR6 Test Circuit Component Layout MRF6P27160HR6 4 RF Device Data Freescale Semiconductor 23 ηD Gps, POWER GAIN (dB) 15.6 22 21 15.4 20 15.2 VDD = 28 Vdc, Pout = 35 W (Avg.), 15 IDQ = 1800 mA, N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 14.8 14.6 Gps IRL −40 −45 −50 ACPR 14.4 ALT1 14.2 −55 −60 −65 14 2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700 −10 −11 −12 −13 −14 −15 IRL, INPUT RETURN LOSS (dB) 24 ACPR (dBc), ALT1 (dBc) 16 15.8 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 35 Watts Avg. 35 14.9 14.8 14.7 ηD 32 ACPR 31 30 −30 −35 14.6 IRL 14.5 14.4 −40 −45 ALT1 14.3 14.2 −50 −55 14.1 −60 14 2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700 −10 −11 −12 −13 −14 −15 −16 IRL, INPUT RETURN LOSS (dB) 34 33 15.1 15 ηD, DRAIN EFFICIENCY (%) VDD = 28 Vdc, Pout = 70 W (Avg.), IDQ = 1800 mA, N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 Gps ACPR (dBc), ALT1 (dBc) Gps, POWER GAIN (dB) 15.2 f, FREQUENCY (MHz) Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 70 Watts Avg. 17 Gps, POWER GAIN (dB) 16 2250 mA 1800 mA 15 1350 mA 14 13 12 0.1 900 mA VDD = 28 Vdc, f1 = 2643.75 MHz, f2 = 2646.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power 400 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) −20 IDQ = 2700 mA VDD = 28 Vdc, f1 = 2643.75 MHz, f2 = 2646.25 MHz Two−Tone Measurements, 2.5 MHz Tone Spacing −30 2700 mA IDQ = 900 mA −40 −50 2250 mA 1800 mA −60 1350 mA 0.1 1 100 10 300 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6P27160HR6 RF Device Data Freescale Semiconductor 5 −10 58 VDD = 28 Vdc, Pout = 160 W (PEP), IDQ = 1800 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 2645 MHz Ideal 3rd Order −30 5th Order −40 P3dB = 54.32 dBm (270.33 W) 57 Pout, OUTPUT POWER (dBm) −20 −50 7th Order 56 55 P1dB = 53.64 dBm (231.15 W) 54 Actual 53 52 VDD = 28 Vdc, IDQ = 1800 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 2645 MHz 51 −60 0.1 50 10 1 34 100 35 36 38 37 39 40 41 TWO−TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing Figure 8. Pulsed CW Output Power versus Input Power 35 42 −35 VDD = 28 Vdc, IDQ = 1800 mA, f = 2645 MHz Single−Carrier N−CDMA, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) 30 25 −40 −45 −50 20 Gps −55 15 −60 10 ACPR (dBc), ALT1 (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS ALT1 5 ACPR ηD −65 0 1 −70 100 10 Pout, OUTPUT POWER (WATTS) AVG. W−CDMA Figure 9. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power 50 40 10 30 20 5 VDD = 28 Vdc IDQ = 1800 mA f = 2645 MHz 0 ηD −5 0.1 1 10 100 10 0 400 15 Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) Gps 15 16 ηD, DRAIN EFFICIENCY (%) 20 14 13 32 V 28 V 12 VDD = 24 V 11 IDQ = 1800 mA f = 2645 MHz 10 0 60 120 180 240 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain and Drain Efficiency versus CW Output Power Figure 11. Power Gain versus Output Power 300 MRF6P27160HR6 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS MTTF (HOURS) 108 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 35 W Avg., and ηD = 22.6%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. MTTF versus Junction Temperature N - CDMA TEST SIGNAL −10 100 −20 −30 1 −40 −50 0.1 (dB) PROBABILITY (%) 10 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. ALT1 Measured in 12.5 kHz Bandwidth @ ±1.25 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 0.0001 0 2 4 6 −60 −70 −80 −90 8 PEAK−TO−AVERAGE (dB) Figure 13. Single - Carrier CCDF N - CDMA 10 1.2288 MHz Channel BW ................................................ .. .. . .. ............. .. ... .. .. +ALT1 in 12.5 kHz −ALT1 in 12.5 kHz ... . . Integrated BW Integrated BW .. .. . .. ... . .. . ...... ....................... ... .......... .... ... . . .. . . . . ................ ........ ... . . ............... ............ ........ .. .............. ......... .. . ......... .... . . . . . . .......... . ................ .............. . . .. . .. . . . . . .. .... . ............. . −ACPR in 30 kHz +ACPR in 30 kHz . . . ... .. . . . . . . . . . . .................... ..... ...... Integrated BW Integrated BW ................ .. ...... ............... ..... ........ ....... ... −100 −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 14. Single - Carrier N - CDMA Spectrum MRF6P27160HR6 RF Device Data Freescale Semiconductor 7 Zo = 10 Ω f = 2600 MHz f = 2700 MHz Zload Zsource f = 2700 MHz f = 2600 MHz VDD = 28 Vdc, IDQ = 1800 mA, Pout = 35 W Avg. f MHz Zsource Ω Zload Ω 2600 6.90 + j0.61 5.24 + j2.46 2610 6.85 + j0.63 5.69 + j2.04 2620 6.76 + j0.59 5.71 + j1.59 2630 6.50 + j0.59 5.62 + j1.48 2640 6.13 + j0.56 5.45 + j1.42 2645 5.95 + j0.69 5.38 + j1.49 2650 5.81 + j0.83 5.31 + j1.58 2660 5.61 + j1.15 5.24 + j1.81 2670 5.69 + j1.48 5.45 + j2.09 2680 5.91 + j1.67 5.84 + j2.22 2690 6.12 + j1.68 6.22 + j2.12 2700 6.17 + j1.60 6.49 + j1.92 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test − − Z source Output Matching Network + Z load Figure 15. Series Equivalent Source and Load Impedance MRF6P27160HR6 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 2X A bbb G 4 1 2 3 4 T A B M M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.52 (38.61) BASED ON M3 SCREW. B (FLANGE) 4X K M B L 4X Q A D aaa M T A M B M ccc ccc M T A M B M T A M B M R M (LID) N (LID) F H C E PIN 5 M (INSULATOR) bbb M T A M B S T SEATING PLANE (INSULATOR) bbb M T A M M B M DIM A B C D E F G H K L M N Q R S aaa bbb ccc INCHES MIN MAX 1.615 1.625 0.395 0.405 0.150 0.200 0.455 0.465 0.062 0.066 0.004 0.007 1.400 BSC 0.082 0.090 0.117 0.137 0.540 BSC 1.219 1.241 1.218 1.242 0.120 0.130 0.355 0.365 0.365 0.375 0.013 REF 0.010 REF 0.020 REF STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 41.02 41.28 10.03 10.29 3.81 5.08 11.56 11.81 1.57 1.68 0.10 0.18 35.56 BSC 2.08 2.29 2.97 3.48 13.72 BSC 30.96 31.52 30.94 31.55 3.05 3.30 9.01 9.27 9.27 9.53 0.33 REF 0.25 REF 0.51 REF DRAIN DRAIN GATE GATE SOURCE CASE 375D - 05 ISSUE E NI - 1230 MRF6P27160HR6 RF Device Data Freescale Semiconductor 9 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 2 Dec. 2008 Description • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p. 1, 2 • Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p. 1 • Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table; related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in Functional Test”, On Characteristics table, p. 2 • Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 • Changed “Z2, Z31” to “Z2, Z30” and “Z3, Z30” to “Z3, Z31” in Z list for Fig. 1, Test Circuit Schematic, p. 3 • Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers, p. 3 • Adjusted scale for Fig. 5, Two - Tone Power Gain versus Output Power, to better match the device’s capabilities, p. 5 • Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 • Replaced Fig. 12, MTTF versus Junction Temperature, with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 • Added Product Documentation and Revision History, p. 10 MRF6P27160HR6 10 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800- 521- 6274 or +1 - 480- 768- 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005 - 2006, 2008. All rights reserved. MRF6P27160HR6 Document RF DeviceNumber: Data MRF6P27160H Rev. 2, 12/2008 Freescale Semiconductor 11