HDSEMI BZX55C8V2 Do-35 glass-encapsulate diode Datasheet

BZX55 SERIES
DO-35 Glass-Encapsulate Diodes
Zener Diodes
Features
●Pd
●Vz
0.5W
2.4V-75V
DO-35
Applications
● Stabilizing Voltage
Symbol
Unit
Conditions
Max
Pd
mW
L=4mm,TL=25℃
500
Zener current
IZ
mA
Ptot /VZ
Maximum junction temperature
Tj
℃
175
Tstg
℃
-65 to +175
Item
Power dissipation
Storage temperature range
See Table
Electrical Characteristics（Ta=25℃ Unless otherwise specified）
Symbol
Unit
Conditions
Max
Thermal resistance
RθJA
℃/W
junction to ambient air, L=4mm,TL=constant
300
Forward voltage
VF
V
IF=200mA
1.5
Item
High Diode Semiconductor
1
Electrical Characteristics (TA=25℃ unless otherwise noted)
BZX55C..
Zener voltage
Dynamic resistance
range
Part Number
RZJT at IZT
VZ at IZT
RZJK at IZK
f = 1 KHZ
f = 1 KHZ
V
Test current
Temperature
Coefficient
Test current
IZT
TKVZ
IZK
mA
Ω
Reverse leakage current
IR at
Tamb=25℃
mA
%/K
Min.
Max.
BZX55C2V4
2.28
2.56
< 85
< 600
BZX55C2V7
2.5
2.9
< 85
< 600
BZX55C3V0
2.8
3.2
< 85
BZX55C3V3
3.1
3.5
BZX55C3V6
3.4
3.8
BZX55C3V9
3.7
BZX55C4V3
4
BZX55C4V7
4.4
5
< 60
< 600
5
- 0.05
0.02
BZX55C5V1
4.8
5.4
< 35
< 550
5
- 0.02
0.02
BZX55C5V6
5.2
6
< 25
< 450
5
- 0.05
0.05
BZX55C6V2
5.8
6.6
< 10
< 200
5
0.03
BZX55C6V8
6.4
7.2
<8
< 150
5
BZX55C7V5
7
7.9
<7
< 50
5
BZX55C8V2
7.7
8.7
<7
< 50
BZX55C9V1
8.5
9.6
< 10
< 50
BZX55C10
9.4
10.6
< 15
BZX55C11
10.4
11.6
< 20
IR at
Tamb=150℃
μA
at VR
V
Min.
Max.
5
- 0.09
- 0.06
1
< 50
< 100
1
5
- 0.09
- 0.06
1
< 10
< 50
1
< 600
5
- 0.08
- 0.05
1
<4
< 40
1
< 85
< 600
5
- 0.08
- 0.05
1
<2
< 40
1
< 85
< 600
5
- 0.08
- 0.05
1
<2
< 40
1
4.1
< 85
< 600
5
- 0.08
- 0.05
1
<2
< 40
1
4.6
< 75
< 600
5
- 0.06
- 0.03
1
<1
< 20
1
1
< 0.5
< 10
1
1
< 0.1
<2
1
1
< 0.1
<2
1
0.06
1
< 0.1
<2
2
0.03
0.07
1
< 0.1
<2
3
0.03
0.07
1
< 0.1
<2
5
5
0.03
0.08
1
< 0.1
<2
6.2
5
0.03
0.09
1
< 0.1
<2
6.8
< 70
5
0.03
0.1
1
< 0.1
<2
7.5
< 70
5
0.03
0.11
1
< 0.1
<2
8.2
BZX55C12
11.4
12.7
< 20
< 90
5
0.03
0.11
1
< 0.1
<2
9.1
BZX55C13
12.4
14.1
< 26
< 110
5
0.03
0.11
1
< 0.1
<2
10
BZX55C15
13.8
15.6
< 30
< 110
5
0.03
0.11
1
< 0.1
<2
11
BZX55C16
15.3
17.1
< 40
< 170
5
0.03
0.11
1
< 0.1
<2
12
BZX55C18
16.8
19.1
< 50
< 170
5
0.03
0.11
1
< 0.1
<2
13
BZX55C20
18.8
21.2
< 55
< 220
5
0.03
0.11
1
< 0.1
<2
15
BZX55C22
20.8
23.3
< 55
< 220
5
0.04
0.12
1
< 0.1
<2
16
BZX55C24
22.8
25.6
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
18
BZX55C27
25.1
28.9
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
20
BZX55C30
28
32
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
22
BZX55C33
31
35
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
24
BZX55C36
34
38
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
27
BZX55C39
37
41
< 90
< 500
2.5
0.04
0.12
0.5
< 0.1
<5
30
BZX55C43
40
46
< 90
< 600
2.5
0.04
0.12
0.5
< 0.1
<5
33
BZX55C47
44
50
< 110
< 700
2.5
0.04
0.12
0.5
< 0.1
<5
36
BZX55C51
48
54
< 125
< 700
2.5
0.04
0.12
0.5
< 0.1
< 10
39
BZX55C56
52
60
< 135
< 1000
2.5
0.04
0.12
0.5
< 0.1
< 10
43
BZX55C62
58
66
< 150
< 1000
2.5
0.04
0.12
0.5
< 0.1
< 10
47
BZX55C68
64
72
< 200
< 1000
2.5
0.04
0.12
0.5
< 0.1
< 10
51
BZX55C75
70
79
< 250
< 1500
2.5
0.04
0.12
0.5
< 0.1
< 10
56
High Diode Semiconductor
2
Electrical Characteristics (TA=25℃ unless otherwise noted)
BZX55B..
Zener voltage
Dynamic resistance
Test current
Temperature
Coefficient
Test current
IZT
TKVZ
IZK
range
RZJT at IZT
VZ at IZT
Part Number
RZJK at IZK
f = 1 KHZ
f = 1 KHZ
V
mA
Ω
Min.
Max.
BZX55B2V7
2.64
2.76
< 85
< 600
BZX55B3V0
2.94
3.06
< 90
< 600
BZX55B3V3
3.24
3.36
< 90
BZX55B3V6
3.52
3.68
< 90
BZX55B3V9
3.82
3.98
BZX55B4V3
4.22
BZX55B4V7
BZX55B5V1
Reverse leakage current
IR at
Tamb=25℃
mA
%/K
IR at
Tamb=150℃
μA
at VR
V
Min.
Max.
5
- 0.09
- 0.06
1
< 10
< 50
1
5
- 0.08
- 0.05
1
<4
< 40
1
< 600
5
- 0.08
- 0.05
1
<2
< 40
1
< 600
5
- 0.08
- 0.05
1
<2
< 40
1
< 90
< 600
5
- 0.08
- 0.05
1
<2
< 40
1
4.38
< 90
< 600
5
- 0.06
- 0.03
1
<1
< 20
1
4.6
4.8
< 80
< 600
5
- 0.05
0.02
1
< 0.5
< 10
1
5
5.2
< 60
< 550
5
- 0.02
0.02
1
< 0.1
<2
1
BZX55B5V6
5.48
5.72
< 40
< 450
5
- 0.05
0.05
1
< 0.1
<2
1
BZX55B6V2
6.08
6.32
< 10
< 200
5
0.03
0.06
1
< 0.1
<2
2
BZX55B6V8
6.66
6.94
<8
< 150
5
0.03
0.07
1
< 0.1
<2
3
BZX55B7V5
7.35
7.65
<7
< 50
5
0.03
0.07
1
< 0.1
<2
5
BZX55B8V2
8.04
8.36
<7
< 50
5
0.03
0.08
1
< 0.1
<2
6.2
BZX55B9V1
8.92
9.28
< 10
< 50
5
0.03
0.09
1
< 0.1
<2
6.8
BZX55B10
9.8
10.2
< 15
< 70
5
0.03
0.1
1
< 0.1
<2
7.5
BZX55B11
10.78
11.22
< 20
< 70
5
0.03
0.11
1
< 0.1
<2
8.2
BZX55B12
11.76
12.24
< 20
< 90
5
0.03
0.11
1
< 0.1
<2
9.1
BZX55B13
12.74
13.26
< 26
< 110
5
0.03
0.11
1
< 0.1
<2
10
BZX55B15
14.7
15.3
< 30
< 110
5
0.03
0.11
1
< 0.1
<2
11
BZX55B16
15.7
16.3
< 40
< 170
5
0.03
0.11
1
< 0.1
<2
12
BZX55B18
17.64
18.36
< 50
< 170
5
0.03
0.11
1
< 0.1
<2
13
BZX55B20
19.6
20.4
< 55
< 220
5
0.03
0.11
1
< 0.1
<2
15
BZX55B22
21.55
22.45
< 55
< 220
5
0.04
0.12
1
< 0.1
<2
16
BZX55B24
23.5
24.5
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
18
BZX55B27
26.4
27.6
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
20
BZX55B30
29.4
30.6
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
22
BZX55B33
32.4
33.6
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
24
BZX55B36
35.3
36.7
< 80
< 220
5
0.04
0.12
1
< 0.1
<2
27
BZX55B39
38.2
39.8
< 90
< 500
2.5
0.04
0.12
0.5
< 0.1
<5
30
BZX55B43
42.1
43.9
< 90
< 600
2.5
0.04
0.12
0.5
< 0.1
<5
33
BZX55B47
46.1
47.9
< 110
< 700
2.5
0.04
0.12
0.5
< 0.1
<5
36
BZX55B51
50
52
< 125
< 700
2.5
0.04
0.12
0.5
< 0.1
< 10
39
BZX55B56
54.9
57.1
< 135
< 1000
2.5
0.04
0.12
0.5
< 0.1
< 10
43
BZX55B62
60.8
63.2
< 150
< 1000
2.5
0.04
0.12
0.5
< 0.1
< 10
47
BZX55B68
66.6
69.4
< 200
< 1000
2.5
0.04
0.12
0.5
< 0.1
< 10
51
BZX55B75
73
76.5
< 250
< 1500
2.5
0.04
0.12
0.5
< 0.1
< 10
56
High Diode Semiconductor
3
Typical Characteristics
FIG2: Thermal Resistance vs. Lead Length
RthA(K/W)
FIG1: Total Power Dissipation vs. Ambient Temperature
Ptot(W)
600
500
400
500
400
TL=constant
300
300
200
200
100
0
100
0
40
80
200
160
120
0
0
Tamb （℃）
10
5
20
15
L ( mm)
FIG4: Typical Ch ang e of W orking Voltage vs.
Junctio n Tem p erature
Vztn
Vz(mV)
FIG3:Typical Change of Working Voltage under
Operating Conditions at Tamb=25 ℃
1000
Tj=25℃
1.3
V ztn=Vzt/V z(25 ℃ )
1.2
TKvz= 10 ×1 0-4/K
100
-4× 10-4/K
8×10 -4/K
1.1
6×10 -4/K
4 ×10-4/K
2 ×10-4/K
1.0
Iz=5mA
10
0
-4× 10-4/K
-4× 10-4/K
0.9
1
0
5
10
15
20
0.8
25
-60
60
0
120
180
Vz(V)
Tj( ℃ )
F IG 6: F orw ard C urrent vs. F orw ard V oltage
IF(mA)
TKvz(10-4/K)
F IG 5: T em perature C oefficient of V z vs. Z -volta ge
15
240
100
10
10
T j=25 ℃
1.0
5
0.1
0
0.01
-5
0
10
20
30
40
50
V z(V )
0.001
0
0.2
0.4
High Diode Semiconductor
0.6
0.8
1.0
V F (V )
4
.022(0.55)
MAX
.079(2.00)
MAX
1.02(26.0)
MIN
.165(4.20)
MAX
1.02(26.0)
MIN
DO-35
Unit: in inches (millimeters)
JSHD
JSHD
High Diode Semiconductor
5
Ammo Box Packaging Specifications For Axial Lead Rectifiers
High Diode Semiconductor
6