Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-237 Plastic Package CTN635, CTN637, CTN639 CTN636, CTN638, CTN640 CTN635, 637, 639 NPN SILICON PLANAR EPITAXIAL TRANSISTORS CTN636, 638, 640 PNP SILICON PLANAR EPITAXIAL TRANSISTORS Complementary Transistors in Plastic Package for Driver Stage of Audio Amplifier. E B 1 = COLLECTOR 2 = BASE 3 = EMITTER C 1 2 3 ABSOLUTE MAXIMUM RATINGS Ratings Symbol C T N 6 3 5 C T N 6 3 7 C T N 6 3 9 CTN636 CTN638 CTN640 Units Collector-Base Voltage VCBO 45 60 100 V Collector-Emitter Voltage VCEO 45 60 80 V Emitter-Base Voltage VEBO 5 - V Collector Current – Continuous IC - 1 - A Peak ICM - 1.5 - A Base Current – Continuous IB - 100 - mA Peak IBM - 200 - mA Power Dissipation @ Ta=25ºC PD Derate above 25°C Power Dissipation @ Tc=25ºC PD Derate above 25°C Operating And Storage Junction Temperature Range Continental Device India Limited - 750 - mW - 6 - mW/°C - 2.5 - W 20 - mW/°C Tj ,Tstg Data Sheet –55 to +150 ºC Page 1 of 4 CTN635, CTN637, CTN639 CTN636, CTN638, CTN640 ELECTRICAL CHARACTERISTICS (Ta =25ºC unless otherwise specified) Characteristic Symbol Min. Typ. Max. Unit Collector-Emitter Voltage IC=10mA, IB =0 635, 636 637, 638 639, 640 BVCEO 45 60 80 - - V V V Collector-Base Voltage IC=100µA, I E=0 635, 637, 639, BVCBO 45 60 100 - - V V V BVEBO 5 - - V ICBO - - 100 10 Base Emitter On Voltage IC=500mA, V CE=2V VBE(on)* - - 1.0 V Collector-Emitter (Sat) Voltage IC=500mA, IB =50mA VCE(sat)* - - 0.5 V hFE 25 40 40 25 - 160 160 - Cib - 50 110 - pF pF 636 638 640 Emitter-Base Voltage IE=10µA, IC=0 Collector Cutoff Current VCB =30V, IE =0 VCB =30V, IE =0, Ta=125°C D.C. Current Gain IC=5mA, VCE=2V IC=150mA, VCE=2V* 635, 636 637, 638 639, 640 IC=500mA, VCE=2V* DYNAMIC CHARACTERISTICS Input Capacitance NPN VBE=0.5V, IC=0, PNP f=1MHz nA µA Input Capacitance VCB =10V, IC=0, f=1MHz NPN PNP C ob - 7 9 - pF pF Transition Frequency IC=10mA, V CE=5V, f=35MHz NPN PNP fT - 130 50 - MHz MHz * Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%. Continental Device India Limited Data Sheet Page 2 of 4 CTN635, CTN637, CTN639 CTN636, CTN638, CTN640 DC Current Gain hFE - Current Gain VCE = 2V IC Collector Current (mA) fT - Current Gain Bandwidth Product (MHz) Current Gain Bandwidth Product VCE = 2V IC Collector Current (mA) Saturation and On Voltages VBEsat at IC/IB = 10 Voltage (v) VBEon at V CE = 2V VCEsat at IC /IB = 10 IC Collector Current (mA) Continental Device India Limited Data Sheet Page 3 of 4 Customer Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 [email protected] www.cdilsemi.com Continental Device India Limited Data Sheet Page 4 of 4