BSS84 P-Channel Enhancement Mode Field-Effect Transistor Features Description -0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V High-Density Cell Design for Low RDS(ON) This P-channel enhancement-mode field-effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process minimizes on-state resistance and to provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch. Voltage-Controlled P-Channel Small-Signal Switch High Saturation Current D D S G G SOT-23 S Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol VDSS VGSS ID PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Continuous Pulsed Drain Current(1) Maximum Power Dissipation(1) Derate Above 25°C Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16” from Case for 10 Seconds Ratings Unit −50 ±20 −0.13 −0.52 0.36 2.9 −55 to +150 V V A A W mW / °C °C 300 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient(1) 350 °C/W Note: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJA is guaranteed by design, while RθJA is determined by the user's board design. a) 350°C/W when mounted on a minimum pad Scale 1: 1 on letter-size paper. Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity SP BSS84 7’’ 8mm 3000 © 2002 Fairchild Semiconductor Corporation BSS84 • Rev. 1.1.0 www.fairchildsemi.com BSS84 — P-Channel Enhancement Mode Field-Effect Transistor February 2013 Symbol Parameter Conditions Min. Typ. Max. Unit Off Characteristics BVDSS Drain–Source Breakdown Voltage ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS BVDSS Gate–Body Leakage. Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 μA ID = –250 μA, Referenced to 25℃ VDS = –50 V, VGS = 0 V VDS = –50 V, VGS = 0 V, TJ = 125°C VGS = ±20 V, VDS = 0 V VGS = 0 V, ID = –250 μA –50 V mV / ℃ –48 –15 μA –60 μA ±10 nA V –2 V –50 On Characteristics(2) VGS(th) VGS(TH) TJ Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient RDS(on) Static Drain–Source On–Resistance ID(on) gFS On–State Drain Current Forward Transconductance VDS = VGS, ID = –1 mA ID = –1 mA, –0.8 mV / ℃ 3 Referenced to 25℃ VGS = –5 V, ID = –0.10 A VGS = –5 V, ID = –0.10 A, TJ = 125°C VGS = –5 V, VDS = – 10 V VDS = –25 V, ID = – 0.10 A –1.7 –0.6 0.05 1.2 10.0 Ω 1.9 17.0 Ω 0.60 A S 73 10 pF pF 5 pF 9 Ω Dynamic Characteristics CISS COSS Input Capacitance Output Capacitance CRSS Reverse Transfer Capacitance RG Gate Resistance VDS = –25 V, VGS = 0 V, f = 1.0 MHz VGS = –15 mV, f = 1.0 MHz Switching Characteristics(2) td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Turn–On Rise Time Turn–Off Delay Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = –30 V, ID = – 0.27 A, VGS = –10 V, RGEN = 6 VDS = –25 V, ID = –0.10 A, VGS = –5 V 2.5 6.3 10 4.8 0.9 0.2 0.3 5.0 13.0 20 9.6 1.3 ns ns ns ns nC nC nC -0.13 A -1.2 V BSS84 — P-Channel Enhancement Mode Field-Effect Transistor Electrical Characteristics(2) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = - 0.26 A(2) -0.8 tRR Diode Reverse-Recovery Time 10 ns QRR Diode Reverse-Recovery Charge IF = -0.1 A, (2) diF / dt = 100 A / µs 3 nC Note: 2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%. © 2002 Fairchild Semiconductor Corporation BSS84 • Rev. 1.1.0 www.fairchildsemi.com 2 1 2 -4.5V -3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -5V 0.8 0.6 -3.0V 0.4 -2.5V 0.2 0 1.8 VGS=-3.0V 1.6 1.4 -3.5V 1.2 1 2 3 4 5 -5.0V 0 0.2 0.4 0.6 0.8 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.8 5 ID = -0.10A VGS = -5V ID = -0.05A RDS(ON), ON-RESISTANCE (OHM) 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 4 3 TA = 125oC 2 TA = 25oC 1 150 2 2.5 o TJ, JUNCTION TEMPERATURE ( C) 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-toSource Voltage 1 VDS = -5V -IS, REVERSE DRAIN CURRENT (A) 1 -ID, DRAIN CURRENT (A) -4.5V 1 0.8 0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.0V BSS84 — P-Channel Enhancement Mode Field-Effect Transistor Typical Characteristics 25oC o TA = -55 C 0.8 125oC 0.6 0.4 0.2 VGS = 0V 0.1 TA = 125oC 25oC 0.01 -55oC 0.001 0.0001 0 1 1.5 2 2.5 3 3.5 0.0 4 0.2 0.4 0.6 0.8 1.0 1.2 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature © 2002 Fairchild Semiconductor Corporation BSS84 • Rev. 1.1.0 www.fairchildsemi.com 3 100 VDS = -8V ID = -0.10A f = 1 MHz VGS = 0 V -25V 4 80 -30V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 1 CISS 60 40 20 COSS CRSS 0 0 0 0.2 0.4 0.6 0.8 1 0 10 Qg, GATE CHARGE (nC) 20 30 40 50 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics P(pk), PEAK TRANSIENT POWER (W) 5 SINGLE PULSE RθJA = 350캜 /W TA = 25캜 4 3 2 1 0 0.01 0.1 1 10 100 t1, TIME (sec) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 9. Maximum Safe Operating Area BSS84 — P-Channel Enhancement Mode Field-Effect Transistor Typical Characteristics (Continued) Figure 10. Single-Pulse Maximum Power Dissipation 1 D = 0.5 RθJA(t) = r(t) * RθJA o 0.2 0.1 RθJA = 350 C/W 0.1 P(pk) 0.05 0.02 0.01 t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described on page 1. Transient thermal response will change depending on the circuit board design. © 2002 Fairchild Semiconductor Corporation BSS84 • Rev. 1.1.0 www.fairchildsemi.com 4 BSS84 — P-Channel Enhancement Mode Field-Effect Transistor Physical Dimension SOT-23 3L Figure 12. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packaging/tr/SOT23-3L_tr.pdf. © 2002 Fairchild Semiconductor Corporation BSS84 • Rev. 1.1.0 www.fairchildsemi.com 5 2Cool AccuPower AX-CAP®* BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax ESBC ® Fairchild® Fairchild Semiconductor® FACT Quiet Series FACT® FAST® FastvCore FETBench Sync-Lock™ FPS F-PFS FRFET® SM Global Power Resource GreenBridge Green FPS Green FPS e-Series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and Better™ MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax mWSaver OptoHiT OPTOLOGIC® OPTOPLANAR® ® PowerTrench® PowerXS™ Programmable Active Droop QFET® QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a time™ SignalWise SmartMax SMART START Solutions for Your Success SPM® STEALTH SuperFET® SuperSOT-3 SuperSOT-6 SuperSOT-8 SupreMOS® SyncFET ®* TinyBoost TinyBuck TinyCalc TinyLogic® TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT®* μSerDes UHC® Ultra FRFET UniFET VCX VisualMax VoltagePlus XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 © 2002 Fairchild Semiconductor Corporation BSS84 • Rev. 1.1.0 www.fairchildsemi.com 6