AUTOMOTIVE GRADE
Features
Advanced Process Technology
Low On-Resistance
P-Channel MOSFET
Dynamic dV/dT Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free, RoHS Compliant
Automotive Qualified*
S
AUIRF7207Q
1
8
A
D
S
2
7
D
S
3
6
D
4
5
D
G
Top View
VDSS
-20V
RDS(on) max
0.06
ID
-5.4A
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a wide
variety of other applications.
Base part number
Package Type
AUIRF7207Q
SO-8
Standard Pack
Form
Tube
SO-8
Tape and Reel
Orderable Part Number
Quantity
95
2500
AUIRF7207Q
AUIRF7207QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
VGSM
EAS
TJ
TSTG
Parameter
Drain-to-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy (Thermally Limited)
Operating Junction and
Storage Temperature Range
Max.
-20
-5.4
-4.3
-43
2.5
1.6
0.02
± 12
-16
140
-55 to + 150
Units
V
A
W
W/°C
V
V
mJ
°C
Thermal Resistance
Symbol
RJA
Parameter
Junction-to-Ambient
Typ.
Max.
Units
–––
50
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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April 30, 2013
AUIRF7207Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-20
–––
–––
V VGS = 0V, ID = -250µA
––– -0.011 ––– V/°C Reference to 25°C, ID = -1mA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
––– 0.06
Static Drain-to-Source On-Resistance
RDS(on)
VGS = -4.5V, ID = -5.4A
–––
––– 0.125
VGS = -2.7V, ID = -2.7A
Gate Threshold Voltage
-0.7
––– -1.6
V VDS = VGS, ID = -250µA
VGS(th)
gfs
Forward Transconductance
8.3
–––
–––
S VDS = -10V, ID = -5.4A
–––
––– -1.0
VDS = -16V, VGS = 0V
Drain-to-Source Leakage Current
µA
IDSS
–––
–––
-25
VDS = -16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
–––
––– -100
VGS = 12V
nA
Gate-to-Source Reverse Leakage
–––
–––
100
VGS = -12V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge
–––
15
22
ID = -5.4A
Gate-to-Source Charge
–––
2.2
3.3
Qgs
nC VDS = -10V
VGS = -4.5V
Qgd
Gate-to-Drain ("Miller") Charge
–––
5.7
8.6
td(on)
Turn-On Delay Time
–––
11
–––
VDD = -10V
ID = -1.0A
Rise Time
–––
24
–––
tr
ns
td(off)
Turn-Off Delay Time
–––
43
–––
RG = 6.0
Fall Time
–––
41
–––
tf
RD = 10
Input Capacitance
–––
780
–––
VGS = 0V
Ciss
Output Capacitance
–––
410
–––
Coss
pF VDS = -15V
ƒ = 1.0 MHz
Crss
Reverse Transfer Capacitance
–––
200
–––
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Continuous Source Current
–––
––– -3.1
MOSFET symbol
A
IS
(Body Diode)
showing the
integral reverse
Pulsed Source Current
–––
–––
-43
A
ISM
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
–––
––– -1.0
V TJ = 25°C, IS = -3.1A, VGS = 0V
dv/dt
Peak Diode Recovery
–––
5.0
––– V/ns TJ = 175°C, IS= -3.1A, VDS = -20V
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
42
50
63
75
ns
nC
TJ = 25°C, IF = -3.1A
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 9.6mH, RG = 25, IAS = -5.4A.
ISD -5.4A, di/dt -79A/µs, VDD V(BR)DSS, TJ 150°C.
Pulse width 300µs; duty cycle 2%.
When mounted on 1 inch square copper board, t<10 sec.
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April 30, 2013
AUIRF7207Q
100
100
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
TOP
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
TOP
10
-2.25V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
-2.25V
10
2.0
TJ = 25 ° C
TJ = 150 °C
10
V DS = -10V
20µs PULSE WIDTH
5.0
RDS(on), Drain-to-Source On Resistance
(Normalized)
-I D, Drain-to-Source Current (A)
100
4.0
6.0
ID = -5.4A
1.5
1.0
0.5
0.0
-60 -40 -20
-VGS, Gate-to-Source Voltage (V)
-VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
10
1200
Ciss
800
Coss
400
Crss
0
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
0
20 40
60
80 100 120 140 160
( °C)
Fig. 4 Normalized On-Resistance vs. Temperature
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1
VGS = -10V
TJ, Junction Temperature
Fig. 3 Typical Transfer Characteristics
1600
10
Fig. 2 Typical Output Characteristics
Fig. 1 Typical Output Characteristics
3.0
1
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
1
2.0
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
www.irf.com © 2013 International Rectifier
ID = -5.4A
VDS =-10V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
5
10
15
20
25
30
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
April 30, 2013
AUIRF7207Q
100
100
TJ = 150 ° C
-IID, Drain Current (A)
-ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
TJ = 25 ° C
1
0.1
0.4
V GS = 0 V
0.6
0.7
0.9
1.1
1.2
100us
10
1ms
TA = 25 °C
TJ = 150 °C
Single Pulse
1
1
1.4
10
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
EAS , Single Pulse Avalanche Energy (mJ)
6.0
-ID, Drain Current (A)
5.0
4.0
3.0
2.0
1.0
0.0
50
75
100
TC, Case Temperature
100
-VDS, Drain-to-Source Voltage (V)
-V SD,Source-to-Drain Voltage (V)
25
10ms
125
400
TOP
BOTTOM
300
200
100
0
25
150
( °C)
50
75
100
125
Starting T J, Junction Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
ID
-2.4A
-4.3A
-5.4A
150
( °C)
Fig 10. Maximum Avalanche Energy vs. Drain Current
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
PDM
0.02
1
t1
0.01
t2
Notes:
1. Duty factor D =t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
SINGLE PULSE
(T HERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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April 30, 2013
AUIRF7207Q
Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 14a. Unclamped Inductive Test Circuit
Fig 15a. Switching Time Test Circuit
Fig 16a. Gate Charge Test Circuit
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www.irf.com © 2013 International Rectifier
Fig 14b. Unclamped Inductive Waveforms
Fig 15b. Switching Time Waveforms
Fig 16b. Gate Charge Waveform
April 30, 2013
AUIRF7207Q
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
D IM
B
5
A
8
7
6
5
6
H
E
0.25 [ .010]
1
2
3
A
4
e
e1
M IN
A
.0532
.0688
1.35
1.75
C
A1
.0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 B ASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
y
0.10 [ .004]
0.25 [ .010]
C
A
M AX
K x 45°
A
8X b
M ILLIM ETERS
M AX
e 1
6X
IN C H ES
M IN
A1
8X L
B
7
8X c
F O O T P R IN T
N O TES:
1 . D IM E N S IO N IN G & T O L E R A N C IN G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 .
8 X 0 .7 2 [ .0 2 8 ]
2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R
3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S [ IN C H E S ] .
4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S - 0 1 2 A A .
5
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S .
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 . 1 5 [ . 0 0 6 ] .
6
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S .
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 . 2 5 [ . 0 1 0 ] .
7
D IM E N S IO N IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O
A SU B STR ATE.
6 .4 6 [ .2 5 5 ]
3 X 1 .2 7 [ .0 5 0 ]
8 X 1 .7 8 [ .0 7 0 ]
SO-8 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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April 30, 2013
AUIRF7207Q
Qualification Information†
Qualification Level
Moisture Sensitivity Level
Machine Model
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level.
SO-8
MSL1
Class M1B (+/- 100V)††
AEC-Q101-002
Human Body Model
ESD
Class H1A (+/- 500V)††
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000V)††
AEC-Q101-005
RoHS Compliant
Yes
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Highest passing voltage.
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April 30, 2013
AUIRF7207Q
IMPORTANT NOTICE
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the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
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For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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April 30, 2013