TGS BD681 Complementary silicon power darlington transistor Datasheet

TIGER ELECTRONIC CO.,LTD
Product specification
BD681/BD682
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
DESCRIPTION
The BD681, are silicon epitaxial-base NPN power
transistors in monolithic Darlington configuration
mounted in Jedec TO-126 plastic package.
They are intended for use in medium power linar
and switching applications
The complementary PNP types are BD682,
respectively.
O
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
4.0
A
Base Current
IB
0.1
A
Ptot
40
W
Tj
150
o
Tstg
-55~150
o
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
C
C
O
ELECTRICAL
CHARACTERISTICS ( Ta = 25 C)
R
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Collector Cut-off Current
ICEO
VCE=100V, IB=0
—
—
0.2
mA
Collector Cut-off Current
ICBO
VCB=100V, IE=0
—
—
0.5
mA
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
—
—
2.0
mA
Collector-Emitter Sustaining Voltage
VCEO
IC=50mA, IB=0
100
—
—
V
DC Current Gain
hFE(1)
VCE=3V, IC=1.5A
750
—
—
—
—
2.5
V
—
—
2.5
V
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
VCE(sat) IC=1.5A,IB=30mA
VBE
VCE=3V,IC=1.5A
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