isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD539A DESCRIPTION ·DC Current Gain : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V(Min) ·Complement to Type BD540A APPLICATIONS ·Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V Collector Current-Continuous 5 A Collector Power Dissipation @ Ta=25℃ 2 Collector Power Dissipation @ TC=25℃ 45 Junction Temperature 150 ℃ -65~150 ℃ IC PC TJ Tstg Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.78 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD539A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A 0.25 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A 0.8 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 4V 1.25 V ICEO Collector Cutoff Current VCB= 30V; IB= 0 0.3 mA ICES Collector Cutoff Current VCE= 60V; VBE= 0 0.2 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 0.5A; VCE= 4V 40 hFE-2 DC Current Gain IC= 1A; VCE= 4V 30 hFE-3 DC Current Gain IC= 3A; VCE= 4V 12 isc Website：www.iscsemi.cn CONDITIONS MIN 60 B B B B 2 MAX UNIT V