DB201S
THRU
DB207S
KI SEMICONDUCTOR
Features
•
•
•
•
•
•
•
Surface Mount Package
Glass Passivated Diode Construction
High Surge Current Capability
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Lead Free Finish/RoHS Compliant (NOTE 1)("P" Suffix
designates RoHS Compliant. See ordering information)
Halogen free available upon request by adding suffix "-HF"
2 Amp Single Phase
Glass Passivated
Bridge Rectifier
50 to 1000 Volts
DBS
Maximum Ratings
•
•
•
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
UL Recognized File # E165989
Catalog
Number
DB201S
DB202S
DB203S
DB204S
DB205S
DB206S
DB207S
Device
Marking
DB201S
DB202S
DB203S
DB204S
DB205S
DB206S
DB207S
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
B
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
+
∼
∼
D
C
K
Notch in Case
A
G
E
H
DIMENSIONS
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
Rating For Fusing
Notes:
IF(AV)
2.0 A
TA = 40°C
IFSM
60A
8.3ms, half sine
VF
1.2V
IF = 2.0A;
TA = 25°C
IR
CJ
I2t
10µA
0.5mA
TJ = 25°C
TJ = 125°C
Measured at
1.0MHz, VR=4.0V
14.9A2s t<8.3ms
DIM
A
B
C
D
E
G
H
K
INCHES
MIN
.316
.245
.040
.360
.102
.003
.195
.038
MAX
.335
.255
.060
.410
.130
.013
.205
.047
MM
MIN
8.05
6.20
1.02
9.40
2.60
.076
5.00
1.00
NOTE
Suggested Solder Pad
Layout
.047”
25pF
1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7
MAX
8.51
6.50
1.50
10.4
3.30
.330
5.20
1.20
.
.344”
.060”
.
.205”
KI SEMICONDUCTOR
DB201S thru DB207S
FIG.1-DERATING CURVE FOR
OUTPUT RECTIFIED CURRENT
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT
AMPERES
BRIDGE OUTPUT
FULL WAVE RECTIFIED CURRENT
AVERAGE AMPERES
2.0
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
0
100
50
60
50
40
30
T A=25
SINGLE SINE-WAVE
JEDEC METHOD
20
10
0
10
1
150
FIG.4-TYPICAL FORWARD CHARACTERISTICS
FIG.3-TYPICAL JUNCTION CAPACITANCE
100
INSTANTANEOUS FORWARD CURRENT,(A)
10
10
TJ=25,f=1MHZ
1.0
1.0
0.1
T J=25
PULSE WIDTH:300us
2% DUTY CYCLE
0.01
0.1
1.0
4.0
10.0
100
0
REVERSE VOLTAGE,(VOLTS)
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.5-TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS REVERSE CURRENT,(µA)
CAPACITANCE(pF)
100
NUMBER OF CYCLES AT 60HZ
AMBIENT TEMPERATURE ,
T J=125
10
1.0
T J=25
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
KI SEMICONDUCTOR