AP10N70R/P-A
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Avalanche Rated Test
D
▼ Fast Switching Performance
▼ Simple Drive Requirement
650V
RDS(ON)
0.6Ω
ID
G
▼ RoHS Compliant
BVDSS
10A
S
Description
AP10N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.Both TO-220
and TO-262 type provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
The TO-220 and TO-262 package is universally preferred for all commercialindustrial applications. The device is suited for switch mode power supplies
,DC-AC converters and high current high speed switching circuits.
G
D
G
D
S
S
TO-262(R)
TO-220(P)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
± 30
10
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
6.8
A
40
A
174
W
1.39
W/℃
50
mJ
10
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
Linear Derating Factor
2
A
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
0.72
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data & specifications subject to change without notice
200519062-1/4
AP10N70R/P-A
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1.0mA
650
-
-
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5.0A
-
-
0.6
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=5A
5
-
-
S
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=480V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS= ± 30V
-
-
±100
nA
ID=10A
-
35.9
57
nC
IDSS
o
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
8.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
11.5
-
nC
3
td(on)
Turn-on Delay Time
VDD=300V
-
14.9
-
ns
tr
Rise Time
ID=10A
-
19.7
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
51.7
-
ns
tf
Fall Time
RD=30Ω
-
23.3
-
ns
Ciss
Input Capacitance
VGS=0V
-
1950 3120
pF
Coss
Output Capacitance
VDS=15V
-
630
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
20
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
3
Ω
Min.
Typ.
Tj=25℃, IS=10A, VGS=0V
-
-
1.5
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
3
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
640
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
7460
-
nC
Notes:
1.Pulse width limited by safe operating area.
o
2.Starting Tj=25 C , VDD=50V , L=1.0mH , RG=25Ω , IAS=10A.
3.Pulse width <300us , duty cycle <2%.
2/4
AP10N70P/R-A
20
16
o
T C =25 C
ID , Drain Current (A)
ID , Drain Current (A)
16
10V
6.0V
5.0V
o
T C =150 C
10V
6.0V
5.0V
12
8
4.5V
12
4.5V
8
V G = 4.0V
4
4
V G =4.0V
0
0
0
5
10
15
0
20
10
V DS , Drain-to-Source Voltage (V)
20
30
40
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.2
Normalized BVDSS (V)
I D =5A
V G =10V
Normalized RDS(ON)
1.1
1
2
1
0.9
0
0.8
25
50
75
100
125
25
150
50
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
100
125
150
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
1.5
10
T j = 25 o C
1
VGS(th) (V)
T j = 150 o C
IS (A)
75
T j , Junction Temperature ( o C )
o
1
0.5
0
0.1
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
25
50
75
100
125
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP10N70P/R-A
f=1.0MHz
10000
I D =10A
C iss
V DS =320V
V DS =400V
V DS =480V
12
C (pF)
VGS , Gate to Source Voltage (V)
16
8
C oss
100
4
C rss
0
1
0
20
40
60
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100us
ID (A)
10
1ms
1
10ms
100ms
o
T c =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
100
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
1S
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
DC
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4