Mitsubishi CM600HU-12F Igbt modules high power switching use Datasheet

MITSUBISHI IGBT MODULES
CM600HU-12F
HIGH POWER SWITCHING USE
CM600HU-12F
¡IC ................................................................... 600A
¡VCES ............................................................ 600V
¡Insulated Type
¡1-elements in a pack
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
107
93±0.25
24.35
21.15
C
8.5
17.2
6.5
E
E
9
2–M4NUTS
20.5
8.5 12.55
29
19.1
26
G
6.5
10 9.5
62
48±0.25
13.5
4–φ6.5
MOUNTING HOLES
CM
18
Tc measured point
6.5
23
2–M8NUTS
6
4
23
C
LABEL
34+1
–0.5
+1
26 –0.5
E
E
G
RTC
CIRCUIT DIAGRAM
Feb. 2009
MITSUBISHI IGBT MODULES
CM600HU-12F
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol
VCES
VGES
IC
ICM
IE (Note 1)
IEM (Note 1)
PC (Note 3)
Tj
Tstg
Viso
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
—
Torque strength
—
Weight
Conditions
G-E Short
C-E Short
TC = 25°C
Pulse
TC = 25°C
Pulse
TC = 25°C
Ratings
600
±20
600
1200
600
1200
1420
–40 ~ +150
–40 ~ +125
2500
8.8 ~ 10.8
3.5 ~ 4.5
1.3 ~ 1.7
450
(Note 2)
(Note 2)
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M8 screw
Mounting M6 screw
G(E) Terminal M4 screw
Typical value
Unit
V
V
A
A
W
°C
°C
Vrms
N•m
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Parameter
Symbol
Test conditions
Limits
Typ.
—
Max.
1
Unit
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
Min.
—
VGE(th)
Gate-emitter threshold voltage
IC = 60mA, VCE = 10V
5
6
7
V
IGES
Gate leakage current
±VGE = VGES, VCE = 0V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.1
—
1.6
1.6
—
—
—
3720
—
—
—
—
—
11.7
—
—
—
0.02
—
—
80
2.2
—
160
11
6.0
—
600
400
900
250
300
—
2.6
0.088
0.12
—
0.048*3
µA
VCE(sat)
Collector-emitter saturation voltage
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (Note 1)
Qrr (Note 1)
VEC(Note 1)
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Rth(j-c’)Q
RG
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal
resistance*1
Contact thermal resistance
Thermal resistance
External gate resistance
Tj = 25°C
Tj = 125°C
IC = 600A, VGE = 15V
VCE = 10V
VGE = 0V
VCC = 300V, IC = 600A, VGE = 15V
VCC = 300V, IC = 600A
VGE = ±15V
RG = 3.1Ω, Inductive load
IE = 600A
IE = 600A, VGE = 0V
IGBT part
FWDi part
Case to heat sink, Thermal compound applied*2
Case temperature measured point is just under the chips
31
mA
V
nF
nC
ns
ns
µC
V
K/W
Ω
Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
*1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
Feb. 2009
2
MITSUBISHI IGBT MODULES
CM600HU-12F
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
15
11
10
Tj=25°C
1000
VGE=20V
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
COLLECTOR CURRENT IC (A)
1200
9.5
800
9
600
8.5
400
8
200
7.5
0
0.5
1
1.5
2
2.5
3
3.5
2
1.5
1
Tj = 25°C
Tj = 125°C
0.5
0
400
800
1200
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
5
104
Tj = 25°C
7
5
4
3
IC = 1200A
2
IC = 600A
IC = 240A
1
0
6
8
10
12
14
16
18
103
7
5
3
2
102
7
5
3
2
0
0.5
1
1.5
2
2.5
3
3.5
4
GATE-EMITTER VOLTAGE VGE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
5
td(off)
SWITCHING TIMES (ns)
7
5
3
2
Cies
102
7
5
3
2
101
7
5
3
2
Tj = 25°C
3
2
101
20
103
CAPACITANCE Cies, Coes, Cres (nF)
VGE = 15V
2.5
0
4
EMITTER CURRENT IE (A)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
0
3
VGE = 0V
Cres
Coes
tf
102
7
5
tr
3
2
101
7
5
3
2
100 –1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
td(on)
3
2
Conditions:
VCC = 300V
VGE = ±15V
RG = 3.1Ω
Tj = 125°C
100 0
10 2 3 5 7101 2 3 5 7102 2 3 5 7 103
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
Feb. 2009
3
MITSUBISHI IGBT MODULES
CM600HU-12F
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
103
7
5
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth (j–c)
REVERSE RECOVERY TIME trr (ns)
REVERSE RECOVERY CURRENT lrr (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
3
2
102 1
trr
7
5
Irr
Conditions:
VCC = 300V
VGE = ±15V
RG = 3.1Ω
Tj = 25°C
3
2
101 1
10
2
3
5 7 102
2
3
5 7 103
EMITTER CURRENT IE (A)
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
101
7 IGBT part:
5 Per unit base = Rth(j–c) = 0.088K/W
3 FWDi part:
2 Per unit base = Rth(j–c) = 0.12K/W
100
7
5
3
2
3
2
10–1
10–1
10–2
10–2
7
5
3
2
7
5
3
2
10–3
7
5
3
2
7
5
3
2
Single Pulse
TC = 25°C
10–3
10–5 2 3 5 710–4 2 3 5 7 10–3
TIME (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE VGE (V)
20
IC = 600A
18
16
VCC = 200V
14
VCC = 300V
12
10
8
6
4
2
0
0
1000
2000
3000
4000
5000
GATE CHARGE QG (nC)
Feb. 2009
4
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