Mitsubishi BCR20C Medium power use a, b, c : non-insulated type, e : insulated type, glass passivation type Datasheet

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
BCR20A, BCR20B, BCR20C, BCR20E
Dimensions
in mm
1
φ2.0 MIN
3
φ11 MAX
24 MAX
3 MAX
φ8.7 MAX
9 MAX
2
17.5 MAX
1
3
2
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
• IT (RMS) ...................................................................... 20A
• VDRM ..............................................................400V/500V
• IFGT !, IRGT !, IRGT # ........................................... 30mA
BCR20A
APPLICATION
Contactless AC switches, light dimmer,
on/off control of traffic signals, on/off control of copier lamps, microwave ovens,
solid state relay
MAXIMUM RATINGS
Symbol
Parameter
Voltage class
8
12
Unit
VDRM
Repetitive peak off-state voltage ✽1
400
500
V
VDSM
Non-repetitive peak off-state voltage ✽1
600
700
V
Symbol
Parameter
Conditions
IT (RMS)
RMS on-state current
Commercial frequency, sine full
wave, 360° conduction
ITSM
Surge on-state current
I2t
I2t for fusing
PGM
PG (AV)
VGM
Ratings
BCR20A, B, C
Tc =98°C
BCR20E
Tb=64°C
Unit
20
A
60Hz sinewave 1 full cycle, peak value, non-repetitive
220
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
203
A2s
Peak gate power dissipation
5.0
W
Average gate power dissipation
0.5
W
Peak gate voltage
10
V
IGM
Peak gate current
2.0
Tj
Junction temperature
–20 ~ +125
°C
Tstg
Storage temperature
–20 ~ +125
°C
A
✽1. Gate open.
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
MAXIMUM RATINGS (continue)
Symbol
Parameter
—
Weight (Typical value)
—
Soldering temperature
Conditions
3.5
BCR20B
9.0
BCR20C
9.0
BCR20E
—
Viso
Unit
Ratings
BCR20A
g
11
BCR20A only, 10 sec.
°C
230
kg·cm
30
Mounting torque
BCR20C only
Isolated voltage
BCR20E only, Ta=25°C, AC 1 minute, T2 terminal to base
2.94
N·m
1500
V
ELECTRICAL CHARACTERISTICS
Symbol
IDRM
VTM
Parameter
Min.
Typ.
Max.
Unit
Repetitive peak off-state current
Tj=125°C, V DRM applied
—
—
3.0
mA
On-state voltage
Tc=25°C, Tb=25°C (BCR20E only), ITM=30A, Instantaneous
measurement
—
—
1.5
V
—
—
1.5
V
—
—
1.5
V
!
VFGT !
VRGT !
Limits
Test conditions
Gate trigger voltage ✽2
@
Tj=25°C, VD =6V, RL=6Ω, RG=330Ω
VRGT #
#
—
—
1.5
V
IFGT !
!
—
—
30
mA
—
—
30
mA
—
—
30
mA
0.2
—
—
V
Junction to case (BCR20A, BCR20B, BCR20C)
—
—
1.1
°C/W
Junction to base (BCR20E)
—
—
2.4
°C/W
✽3
—
—
V/µs
IRGT !
Gate trigger current ✽2
@
VGD
Tj=125°C, VD=1/2VDRM
Gate non-trigger voltage
R th (j-c)
R th (j-b)
(dv/dt) c
Tj=25°C, VD =6V, RL=6Ω, RG=330Ω
#
IRGT #
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
✽2. Measurement using the gate trigger characteristics measurement circuit.
✽3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
Voltage
class
VDRM
(V)
8
400
(dv/dt) c
Symbol
Min.
R
—
Unit
1. Junction temperature
Tj =125°C
L
10
V/µs
R
10
Test conditions
—
2. Rate of decay of on-state commutating current
(di/dt)c=–10A/ms
3. Peak off-state voltage
VD =400V
600
L
10
Commutating voltage and current waveforms
(inductive load)
SUPPLY
VOLTAGE
MAIN CURRENT
TIME
(di/dt)c
TIME
MAIN
VOLTAGE
(dv/dt)c
TIME
VD
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
Dimensions
in mm
BCR20B
BCR20C
BCR20E
5.3 MAX
20 MAX
(16.2)
(φ16)
23±0.2
φ33 MAX
1
φ2.0 MIN
2
φ2.5 MIN
φ2.0 MIN
2
M6 × 1. 0
1
3
φ8.7 MAX
22.5 MAX
22 MAX
21 MAX
26 MAX
φ8.7 MAX
3 MIN
3
2
11 MAX
10 MAX 19.5 MAX
φ8.7 MAX
25.5 MAX
1.8 MAX
10.5 MAX
1
1.9 MIN
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE
3
TERMINAL
φ2.0 MIN
1.8 MAX
12 MAX
23±0.2
33 MAX
2
19 MAX
14
20 MAX
1
3
21 MAX
2-φ3.2 MIN
2-φ3.2 MIN
PERFORMANCE CURVES
RATED SURGE ON-STATE CURRENT
MAXIMUM ON-STATE CHARACTERISTICS
320
7 TC = 25°C
5 Tb = 25°C
3
2
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
103
102
7
5
3
2
101
7
5
3
2
280
240
200
160
120
80
40
0
100
100
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
GATE VOLTAGE (V)
3
2 VGM = 10V
101
PG(AV) = 0.5W
PGM = 5.0W
7
5
3 VGT = 1.5V
2
IGM = 2A
100
7
5
3
2
IFGT I, IRGT I, IRGT III
VGD = 0.2V
10–1
7
5
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
GATE CURRENT (mA)
GATE TRIGGER • CURRENT VOLTAGE (Tj = t°C)
GATE TRIGGER • CURRENT VOLTAGE (Tj = 25°C)
GATE CHARACTERISTICS
2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
100 (%)
ON-STATE VOLTAGE (V)
2 3 4 5 7 101
GATE TRIGGER CURRENT·VOLTAGE VS.
JUNCTION TEMPERATURE
200
TEST PROCEDURE Ι, ΙΙ AND ΙΙΙ
180
160
GATE TRIGGER CURRENT
140
120
100
80
60 GATE TRIGGER
VOLTAGE
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
TRANSIENT THERMAL IMPEDANCE (°C/W)
102 2 3 5 7 103
1.6
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO BASE) (BCR20E)
102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
50
160
45
140
BASE TEMPERATURE (°C)
CASE TEMPERATURE (°C)
ON-STATE POWER DISSIPATION (W)
TRANSIENT THERMAL IMPEDANCE (°C/W)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE) (BCR20A, B, C)
40 360°
35 CONDUCTION
RESISTIVE,
30 INDUCTIVE
25 LOADS
20
15
10
5
0
0
4
8
12
16
20
24
28
32
BCR20A, BCR20B,
BCR20C
BCR20E
120
100
80
60
40 CURVES APPLY
REGARDLESS
20 OF CONDUCTION
ANGLE
0
0
4
8 12 16
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR20A)
160
160 160 t4.0
120 120 t3.0
140
80 80 t2.0
120
ALL FINS ARE
BLACK PAINTED
ALUMINUM AND GREASED
80
CURVES APPLY
REGARDLESS
OF CONDUCTION
ANGLE
NATURAL CONVECTION
: MOUNTING ON FIN
WITH SOLDER
: MOUNTING PLATE
WITHOUT GREASE
60
40
20
0
0
4
8
12
16
20
24
28
RMS ON-STATE CURRENT (A)
20
24
28
32
RMS ON-STATE CURRENT (A)
32
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR20B)
160
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
100
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
140
160 160 t4.0
120
100
120 120 t3.0
80
80 80 t2.0
60
NATURAL
CONVECTION
: MOUNTING ON FIN
WITHOUT GREASE
: INSULATED PLATE
WITH GREASE
40
20
0
0
4
8
12
16
20
24
28
32
RMS ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
ALUMINUM AND GREASED
140 CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
160 160 t4.0
120
100
120 120 t3.0
80
80 80 t2.0
60
NATURAL
CONVECTION
: MOUNTING ON FIN
WITHOUT GREASE
: MICA PLATE
WITH GREASE
40
20
0
0
4
8
12
16
20
24
28
32
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR20E)
160 ALL FINS ARE BLACK PAINTED
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
(BCR20C)
160 ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
140 RESISTIVE, INDUCTIVE LOADS
NATURAL CONVECTION
120
160 160 t4.0
100
120 120 t3.0
80 80 t2.0
80
CURVES APPLY
REGARDLESS
OF CONDUCTION
ANGLE
60
40
20
0
0
4
8
12
16
20
24
28
32
RMS ON-STATE CURRENT (A)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
A
6V
A
6V
RG
V
TEST PROCEDURE 1
V
RG
TEST PROCEDURE 2
6Ω
A
6V
V
RG
TEST PROCEDURE 3
Feb.1999
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