Yea Shin BAS70 Schottky diode Datasheet

DATA SHEET
BAS70/A/C/S
SEMICONDUCTOR
H
SCHOTTKY DIODE
Unit:inch(mm)
SOT23
FEATURES
•Low Turn-on voltage
•Fast switching
•Ultra-small surface mount package
•Also available in lead free version
• High temperature soldering : 260OC / 10 seconds at terminals
• Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
BAS70 Marking: 73
BAS70S Marking: 74
Dimensions In Inches
Min
Max
0.045
0.035
0.004
0.000
0.035
0.041
0.012
0.020
0.006
0.003
0.118
0.110
0.047
0.055
0.089
0.100
0.037 TYP
0.079
0.071
0.022 REF
0.012
0.020
0°
6°
Dimensions In Millimeters
Min
Max
1.150
0.900
0.100
0.000
0.900
1.050
0.300
0.500
0.150
0.080
3.000
2.800
1.200
1.400
2.250
2.550
0.950 TYP
2.000
1.800
0.550 REF
0.300
0.500
0°
8°
BAS70C Marking: 75
BAS70A Marking: 76
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Units
Value
Parameter
Symbol
VR
DC Voltage
70
V
IF
Forward Continuous Current
70
mA
200
mW
Power dissipation
Pd
Junction Operating and Storage Temperature
TJ, Tstg
-55~+150
℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reveres recovery time
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Symbol
Test conditions
MIN
V(BR) R
IR= 10µA
70
IR
VR=50V
VF
CD
trr
MAX
UNIT
100
nA
V
IF=1mA
410
IF=15mA
1000
VR=0V f=1MHz
2
pF
5
nS
IF=IR=10mA,Irr=0.1xIR,
RL=100Ω
1
mV
REV.03 20120305
DEVICE CHARACTERISTICS
BAS70/A/C/S
2.5
Pd,FPower Dissipation(mW)
Total Capacitance: C T(pF)
2.0
f=1.0MHz
1.5
1.0
0.5
240
200
160
120
80
40
0
0
0
10
20
REVERSE VOLTAGE: V (V)
R
30
40
50
75
100
125 150 175
TA ,Ambient Temperature , O C
O
f=1MHz Tamb=25 C
Fig.4- Power Derating Curve,Total Package
Fig.3 Typical Capacitance.
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25
2
REV.03 20120305
亞 昕 科 技 股 份 有 限 公 司
YEASHIN
TECHNOLOGY CO., LTD.
* SOLDERING FOOTPRINT
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