DATA SHEET BAS70/A/C/S SEMICONDUCTOR H SCHOTTKY DIODE Unit:inch(mm) SOT23 FEATURES •Low Turn-on voltage •Fast switching •Ultra-small surface mount package •Also available in lead free version • High temperature soldering : 260OC / 10 seconds at terminals • Pb free product at available : 99% Sn above meet RoHS environment substance directive request Symbol A A1 A2 b c D E E1 e e1 L L1 θ BAS70 Marking: 73 BAS70S Marking: 74 Dimensions In Inches Min Max 0.045 0.035 0.004 0.000 0.035 0.041 0.012 0.020 0.006 0.003 0.118 0.110 0.047 0.055 0.089 0.100 0.037 TYP 0.079 0.071 0.022 REF 0.012 0.020 0° 6° Dimensions In Millimeters Min Max 1.150 0.900 0.100 0.000 0.900 1.050 0.300 0.500 0.150 0.080 3.000 2.800 1.200 1.400 2.250 2.550 0.950 TYP 2.000 1.800 0.550 REF 0.300 0.500 0° 8° BAS70C Marking: 75 BAS70A Marking: 76 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Units Value Parameter Symbol VR DC Voltage 70 V IF Forward Continuous Current 70 mA 200 mW Power dissipation Pd Junction Operating and Storage Temperature TJ, Tstg -55~+150 ℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reveres recovery time http://www.yeashin.com Symbol Test conditions MIN V(BR) R IR= 10µA 70 IR VR=50V VF CD trr MAX UNIT 100 nA V IF=1mA 410 IF=15mA 1000 VR=0V f=1MHz 2 pF 5 nS IF=IR=10mA,Irr=0.1xIR, RL=100Ω 1 mV REV.03 20120305 DEVICE CHARACTERISTICS BAS70/A/C/S 2.5 Pd,FPower Dissipation(mW) Total Capacitance: C T(pF) 2.0 f=1.0MHz 1.5 1.0 0.5 240 200 160 120 80 40 0 0 0 10 20 REVERSE VOLTAGE: V (V) R 30 40 50 75 100 125 150 175 TA ,Ambient Temperature , O C O f=1MHz Tamb=25 C Fig.4- Power Derating Curve,Total Package Fig.3 Typical Capacitance. http://www.yeashin.com 25 2 REV.03 20120305 亞 昕 科 技 股 份 有 限 公 司 YEASHIN TECHNOLOGY CO., LTD. * SOLDERING FOOTPRINT http://www.yeashin.com