AP9965GEM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D2 ▼ Simple Drive Requirement D2 D1 D1 ▼ Dual N MOSFET Package BVDSS 40V RDS(ON) 28mΩ ID 6.7A G2 S2 ▼ RoHS Compliant SO-8 S1 G1 Description D1 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 D2 G2 S1 S2 Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units 40 V ±16 V 3 6.7 A 3 5.2 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current 30 A PD@TA=25℃ Total Power Dissipation 2 W Linear Derating Factor 0.016 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Value Unit 62.5 ℃/W 200622062-1/4 AP9965GEM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 40 - - V - 0.045 - V/℃ VGS=10V, ID=6A - - 28 mΩ VGS=4.5V, ID=4A - - 32 mΩ 0.8 - 2.5 V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS 2 VDS=VGS, ID=250uA VDS=10V, ID=6A - 6 - S o VDS=40V, VGS=0V - - 1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=32V, VGS=0V - - 25 uA Gate-Source Leakage VGS=±16V - - ±30 uA ID=6A - 8.3 13 nC Drain-Source Leakage Current (Tj=25 C) IGSS VGS=0V, ID=250uA Max. Units 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=30V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3.6 - nC VDS=20V - 4.6 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 7 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 19.6 - ns tf Fall Time RD=20Ω - 5.4 - ns Ciss Input Capacitance VGS=0V - 615 980 pF Coss Output Capacitance VDS=25V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 60 - pF Rg Gate Resistance f=1.0MHz - 1.8 2.7 Ω Min. Typ. IS=1.7A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=6A, VGS=0V, - 20 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 14 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad. 2/4 AP9965GEM 30 20 10 20 10 0 0 0 1 2 3 0 4 1 2 Fig 1. Typical Output Characteristics 4 5 6 Fig 2. Typical Output Characteristics 70 1.6 ID=4A T A =25 ℃ ID=6A V G =10V Normalized RDS(ON) RDS(ON) (mΩ) 3 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) 45 20 1.3 1.0 0.7 2 4 6 8 10 25 V GS , Gate-to-Source Voltage (V) 75 100 125 150 T j , Junction Temperature ( C) Fig 4. Normalized On-Resistance v.s. Junction Temperature 50.0 6 40.0 RDS(ON) (mΩ) 8 T j =150 o C 50 o Fig 3. On-Resistance v.s. Gate Voltage IS(A) 10V 7.0 V 5.0 V 4.5 V V G = 3.0 V T A = 150 o C ID , Drain Current (A) ID , Drain Current (A) 30 10V 7.0 V 5.0 V 4.5 V V G = 3.0 V T A = 25 o C T j =25 o C 4 2 V GS =4.5V 30.0 V GS =10V 20.0 0 10.0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 0 10 20 30 40 I D , Drain Current (A) Fig 6. On-Resistance vs. Drain Current 3/4 AP9965GEM f=1.0MHz 10000 VGS , Gate to Source Voltage (V) 16 ID=6A 12 V DS = 20 V V DS = 25 V V DS = 30 V 1000 C (pF) C iss 8 100 C oss C rss 4 0 10 0 5 10 15 20 1 5 Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 10 Normalized Thermal Response (Rthja) 100 100us 1ms ID (A) 9 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) 1 10ms 100ms 0.1 T A =25 o C Single Pulse 1s Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 PDM t 0.01 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Single Pulse Rthja = 135℃/W DC 0.001 0.01 0.1 1 10 100 0.0001 0.001 V DS , Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 ID , Drain Current (A) V DS =5V T j =25 o C o T j =150 C VG QG 20 4.5V QGS QGD 10 Charge Q 0 0 2 4 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4