BCP69; BC869; BC69PA 20 V, 2 A PNP medium power transistors Rev. 7 — 12 October 2011 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number[1] Package NXP JEITA JEDEC BCP69 SOT223 SC-73 - BCP68 BC869 SOT89 SC-62 TO-243 BC868 BC69PA SOT1061 - - BC68PA [1] NPN complement Valid for all available selection groups. 1.2 Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) Leadless very small SMD plastic package with medium power capability (SOT1061) AEC-Q101 qualified 1.3 Applications Linear voltage regulators High-side switches Battery-driven devices Power management MOSFET drivers Amplifiers 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 20 V IC collector current - - 2 A ICM peak collector current - - 3 A single pulse; tp 1 ms BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors Table 2. Quick reference data …continued Symbol Parameter Conditions Min Typ Max hFE DC current gain VCE = 1 V; IC = 500 mA [1] 85 - 375 hFE selection -16 VCE = 1 V; IC = 500 mA [1] 100 - 250 hFE selection -25 VCE = 1 V; IC = 500 mA [1] 160 - 375 [1] Unit Pulse test: tp 300 s; = 0.02. 2. Pinning information Table 3. Pin Pinning Description Simplified outline Graphic symbol SOT223 1 base 2 collector 3 emitter 4 collector 2, 4 4 1 1 2 3 3 sym028 SOT89 1 emitter 2 collector 3 base 2 3 3 2 1 1 006aaa231 SOT1061 1 base 2 emitter 3 collector 3 3 1 2 1 2 sym013 Transparent top view BCP69_BC869_BC69PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 12 October 2011 © NXP B.V. 2011. All rights reserved. 2 of 24 BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 3. Ordering information Table 4. Ordering information Type number[1] Package Name Description Version BCP69 SC-73 plastic surface-mounted package with increased heatsink; 4 leads SOT223 BC869 SC-62 plastic surface-mounted package; exposed die pad for good heat transfer; 3 leads SOT89 BC69PA HUSON3 plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 2 2 0.65 mm [1] SOT1061 Valid for all available selection groups. 4. Marking Table 5. BCP69_BC869_BC69PA Product data sheet Marking codes Type number Marking code BCP69 BCP69 BCP69-16 BCP69/16 BCP69-25 BCP69/25 BC869 CEC BC869-16 CGC BC869-25 CHC BC69PA B3 BC69-16PA BM BC69-25PA BN All information provided in this document is subject to legal disclaimers. Rev. 7 — 12 October 2011 © NXP B.V. 2011. All rights reserved. 3 of 24 BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 32 V VCEO collector-emitter voltage open base - 20 V VEBO emitter-base voltage open collector - 5 V IC collector current - 2 A ICM peak collector current - 3 A IB base current - 0.4 A IBM peak base current single pulse; tp 1 ms - 0.4 A Ptot total power dissipation Tamb 25 C [1] - 0.65 W [2] - 1.00 W [3] - 1.35 W [1] - 0.50 W [2] - 0.95 W [3] - 1.35 W [1] - 0.42 W [2] - 0.83 W [3] - 1.10 W [4] - 0.81 W [5] - 1.65 W single pulse; tp 1 ms BCP69 BC869 BC69PA BCP69_BC869_BC69PA Product data sheet Tj junction temperature - 150 C Tamb ambient temperature 55 +150 C Tstg storage temperature 65 +150 C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. [5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2. All information provided in this document is subject to legal disclaimers. Rev. 7 — 12 October 2011 © NXP B.V. 2011. All rights reserved. 4 of 24 BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 006aac674 1.5 006aac675 1.5 (1) (1) Ptot (W) Ptot (W) (2) 1.0 (2) 1.0 (3) (3) 0.5 0.5 0.0 –75 –25 25 75 0.0 –75 125 175 Tamb (°C) –25 25 75 125 175 Tamb (°C) (1) FR4 PCB, mounting pad for collector 6 cm2 (1) FR4 PCB, mounting pad for collector 6 cm2 cm2 (2) FR4 PCB, mounting pad for collector 1 cm2 (2) FR4 PCB, mounting pad for collector 1 (3) FR4 PCB, standard footprint Fig 1. (3) FR4 PCB, standard footprint Power derating curves SOT223 Fig 2. Power derating curves SOT89 006aac676 2.0 Ptot (W) (1) 1.5 (2) 1.0 (3) (4) 0.5 (5) 0.0 –75 –25 25 75 125 175 Tamb (°C) (1) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2 (2) FR4 PCB, single-sided copper, mounting pad for collector 6 cm2 (3) FR4 PCB, single-sided copper, mounting pad for collector 1 cm2 (4) FR4 PCB, 4-layer copper, standard footprint (5) FR4 PCB, single-sided copper, standard footprint Fig 3. Power derating curves SOT1061 BCP69_BC869_BC69PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 12 October 2011 © NXP B.V. 2011. All rights reserved. 5 of 24 BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 192 K/W [2] - - 125 K/W [3] - - 93 K/W [1] - - 250 K/W [2] - - 132 K/W [3] - - 93 K/W [1] - - 298 K/W [2] - - 151 K/W [3] - - 114 K/W [4] - - 154 K/W [5] - - 76 K/W BCP69 - - 16 K/W BC869 - - 16 K/W BC69PA - - 20 K/W BCP69 BC869 BC69PA Rth(j-sp) BCP69_BC869_BC69PA Product data sheet thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. [5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2. All information provided in this document is subject to legal disclaimers. Rev. 7 — 12 October 2011 © NXP B.V. 2011. All rights reserved. 6 of 24 BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 006aac677 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 1 0 10–1 10–5 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223; typical values 006aac678 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 10 0.05 1 0 10–1 10–5 0.02 0.01 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223; typical values BCP69_BC869_BC69PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 12 October 2011 © NXP B.V. 2011. All rights reserved. 7 of 24 BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 006aac679 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 10 0.05 1 0 10–1 10–5 0.02 0.01 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223; typical values 006aac680 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 0.33 0.2 102 0.1 0.05 10 0.02 0.01 1 0 10–1 10–5 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 7. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89; typical values BCP69_BC869_BC69PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 12 October 2011 © NXP B.V. 2011. All rights reserved. 8 of 24 BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 006aac681 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 0.33 0.2 102 0.1 10 0.05 0.02 0.01 1 0 10–1 10–5 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 8. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89; typical values 006aac682 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 10 0.05 1 0 10–1 10–5 0.02 0.01 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89; typical values BCP69_BC869_BC69PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 12 October 2011 © NXP B.V. 2011. All rights reserved. 9 of 24 BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 006aac683 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 0.33 0.25 0.2 102 0.1 0.05 10 0.02 1 0.01 0 10–1 10–5 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, single-sided copper, standard footprint Fig 10. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061; typical values 006aac684 103 Zth(j-a) (K/W) 102 10 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 1 0.01 0 10–1 10–5 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, single-sided copper, mounting pad for collector 1 cm2 Fig 11. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061; typical values BCP69_BC869_BC69PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 12 October 2011 © NXP B.V. 2011. All rights reserved. 10 of 24 BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 006aac685 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 0.33 0.25 0.2 102 0.1 10 1 0 10–1 10–5 0.05 0.02 0.01 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, single-sided copper, mounting pad for collector 6 cm2 Fig 12. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061; typical values 006aac686 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.25 0.33 0.2 0.1 10 0.05 0.02 1 0 10–1 10–5 0.01 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, 4-layer copper, standard footprint Fig 13. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061; typical values BCP69_BC869_BC69PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 12 October 2011 © NXP B.V. 2011. All rights reserved. 11 of 24 BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 006aac687 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.25 10 0.1 1 0 10–1 10–5 0.33 0.2 0.05 0.02 0.01 10–4 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2 Fig 14. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT1061; typical values BCP69_BC869_BC69PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 12 October 2011 © NXP B.V. 2011. All rights reserved. 12 of 24 BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 7. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 25 V; IE = 0 A - - 100 nA VCB = 25 V; IE = 0 A; Tj = 150 C - - 10 A IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 nA hFE DC current gain VCE = 10 V 50 - - IC = 5 mA DC current gain DC current gain VCEsat VBE Product data sheet IC = 500 mA [1] 85 - 375 IC = 1 A [1] 60 - - IC = 2 A [1] 40 - - VCE = 1 V hFE selection -16 IC = 500 mA [1] 100 - 250 hFE selection -25 IC = 500 mA [1] 160 - 375 - - 0.5 V 0.6 V 0.7 V collector-emitter saturation voltage IC = 1 A; IB = 100 mA [1] IC = 2 A; IB = 200 mA [1] base-emitter voltage VCE = 10 V; IC = 5 mA [1] VCE = 1 V; IC = 1 A [1] - - - - 1 V Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - 28 - pF fT transition frequency VCE = 5 V; IC = 50 mA; f = 100 MHz 40 140 - MHz [1] BCP69_BC869_BC69PA VCE = 1 V Pulse test: tp 300 s; = 0.02. All information provided in this document is subject to legal disclaimers. Rev. 7 — 12 October 2011 © NXP B.V. 2011. All rights reserved. 13 of 24 BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 006aac697 300 hFE 006aab403 −2.4 IC (A) −2.0 (1) IB (mA) = −18.0 −14.4 −1.6 200 −16.2 (2) −12.6 −10.8 −9.0 −1.2 −7.2 100 −5.4 −0.8 (3) −3.6 −0.4 0 -10-4 -10-3 -10-2 -10-1 −1.8 0 -1 -10 0 IC (A) VCE = 1 V −1 −2 −3 −4 VCE (V) −5 Tamb = 25 C (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = 55 C Fig 15. hFE selection -16: DC current gain as a function of collector current; typical values 006aac698 -1.2 Fig 16. hFE selection -16: collector current as a function of collector-emitter voltage; typical values 006aac699 -1 VCEsat (V) VBE (V) (1) -10-1 -0.8 (1) (2) (2) (3) -10-2 -0.4 0.0 -10-1 -1 -10 -102 -103 -104 IC (mA) VCE = 1 V (3) -10-3 -10-1 -1 (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 100 C (3) Tamb = 55 C Fig 17. hFE selection -16: base-emitter voltage as a function of collector current; typical values Product data sheet -102 -103 -104 IC (mA) IC/IB = 10 (1) Tamb = 55 C BCP69_BC869_BC69PA -10 Fig 18. hFE selection -16: collector-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 7 — 12 October 2011 © NXP B.V. 2011. All rights reserved. 14 of 24 BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 006aac707 400 (1) hFE 006aab404 −2.4 IC (A) IB (mA) = −12.0 −2.0 −10.8 300 (2) −9.6 −1.6 −8.4 −7.2 −6.0 −1.2 200 −4.8 (3) −3.6 −0.8 −2.4 100 −0.4 0 -10-4 -10-3 -10-2 -10-1 −1.2 0 -1 -10 0 IC (A) VCE = 1 V −1 −2 −3 −4 VCE (V) −5 Tamb = 25 C (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = 55 C Fig 19. hFE selection -25: DC current gain as a function of collector current; typical values 006aac708 -1.2 Fig 20. hFE selection -25: collector current as a function of collector-emitter voltage; typical values 006aac709 –1 VCEsat (V) VBE (V) (1) –10–1 -0.8 (1) (2) (2) (3) –10–2 -0.4 (3) 0.0 -10-1 -1 -10 -102 -103 -104 IC (mA) VCE = 1 V –10–3 –10–1 –1 (1) Tamb = 55 C (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = 100 C (3) Tamb = 55 C Fig 21. hFE selection -25: base-emitter voltage as a function of collector current; typical values Product data sheet –102 –103 –104 IC (mA) IC/IB = 10 (2) Tamb = 25 C BCP69_BC869_BC69PA –10 Fig 22. hFE selection -25: collector-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 7 — 12 October 2011 © NXP B.V. 2011. All rights reserved. 15 of 24 BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 6.7 6.3 3.1 2.9 1.8 1.5 4 1.1 0.7 7.3 6.7 3.7 3.3 1 2 3 0.32 0.22 0.8 0.6 2.3 4.6 Dimensions in mm 04-11-10 Fig 23. Package outline SOT223 (SC-73) 4.6 4.4 1.8 1.4 1.6 1.4 2.6 2.4 4.25 3.75 1 2 1.2 0.8 3 0.53 0.40 1.5 0.48 0.35 0.44 0.23 3 Dimensions in mm 06-08-29 Fig 24. Package outline SOT89 (SC-62/TO-243) BCP69_BC869_BC69PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 12 October 2011 © NXP B.V. 2011. All rights reserved. 16 of 24 BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 1.3 0.65 max 0.35 0.25 1 1.05 0.95 2 0.45 0.35 1.1 0.9 0.3 0.2 2.1 1.9 3 1.6 1.4 Dimensions in mm 2.1 1.9 09-11-12 Fig 25. Package outline SOT1061 (HUSON3) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number[2] Package BCP69 SOT223 BC869 BC69PA BCP69_BC869_BC69PA Product data sheet Description Packing quantity 8 mm pitch, 12 mm tape and reel SOT89 SOT1061 - -135 8 mm pitch, 12 mm tape and reel; T1 -115 - -135 8 mm pitch, 12 mm tape and reel; T3 [4] -146 - - - -115 - 4 mm pitch, 8 mm tape and reel For further information and the availability of packing methods, see Section 14. Valid for all available selection groups. T1: normal taping T3: 90 rotated taping 4000 -115 [2] [4] 3000 [3] [1] [3] 1000 All information provided in this document is subject to legal disclaimers. Rev. 7 — 12 October 2011 © NXP B.V. 2011. All rights reserved. 17 of 24 BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 11. Soldering 7 3.85 3.6 3.5 0.3 1.3 1.2 (4×) (4×) solder lands 4 solder resist 3.9 6.1 7.65 solder paste occupied area 1 2 3 Dimensions in mm 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 sot223_fr Fig 26. Reflow soldering footprint SOT223 (SC-73) 8.9 6.7 1.9 solder lands 4 solder resist 6.2 8.7 occupied area Dimensions in mm 1 2 3 1.9 (3×) 2.7 preferred transport direction during soldering 2.7 1.1 1.9 (2×) sot223_fw Fig 27. Wave soldering footprint SOT223 (SC-73) BCP69_BC869_BC69PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 12 October 2011 © NXP B.V. 2011. All rights reserved. 18 of 24 BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 4.75 2.25 2 1.9 1.2 0.2 0.85 solder lands 1.7 1.2 4.6 solder resist 0.5 4.85 solder paste occupied area 1.1 (2×) 1 (3×) 1.5 Dimensions in mm 1.5 0.6 (3×) 0.7 (3×) 3.95 sot089_fr Fig 28. Reflow soldering footprint SOT89 (SC-62/TO-243) 6.6 2.4 3.5 solder lands 7.6 0.5 solder resist occupied area 1.8 (2×) Dimensions in mm preferred transport direction during soldering 1.9 1.5 (2×) 1.9 0.7 5.3 sot089_fw Fig 29. Wave soldering footprint SOT89 (SC-62/TO-243) BCP69_BC869_BC69PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 12 October 2011 © NXP B.V. 2011. All rights reserved. 19 of 24 BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 2.1 1.3 0.5 (2×) 0.4 (2×) 0.5 (2×) 0.6 (2×) 1.05 2.3 0.6 0.55 0.25 1.1 0.25 1.2 0.25 0.4 0.5 1.6 1.7 Dimensions in mm solder paste = solder lands solder resist occupied area sot1061_fr Reflow soldering is the only recommended soldering method. Fig 30. Reflow soldering footprint SOT1061 (HUSON3) BCP69_BC869_BC69PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 12 October 2011 © NXP B.V. 2011. All rights reserved. 20 of 24 BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes BCP69_BC869_BC69PA v.7 20111012 Product data sheet - Modifications: BC869_6 BCP69_6 • The format of this document has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • • • • • • • • • Legal texts have been adapted to the new company name where appropriate. Type number BC69PA added Type number BCP69-16/DG and BCP69-16/IN removed Section 1 “Product profile”: updated Section 2 “Pinning information”: updated Section 3 “Ordering information”: updated Section 4 “Marking”: updated Section 10 “Packing information”:updated Table 6, 7 and 8: updated according to latest measurements Figure 1, 15 to 18 updated Figure 2 to 14, 24 to 25, 28 to 30: added BC869_6 20041108 Product data sheet - BC869_5 BC869_5 20031202 Product specification - BC869_4 BC869_4 19990408 Product specification - BC869_3 BC869_3 19980716 Product specification - BC869_CNV_2 BC869_CNV_2 19970401 Product specification - - BCP69_6 20081202 Product data sheet - BCP69_5 BCP69_5 20031125 Product specification - BCP69_4 BCP69_4 20021115 Product specification - BCP69_3 BCP69_3 19990408 Product specification - BCP69_CNV_2 BCP69_CNV_2 19970312 Product specification - - BCP69_BC869_BC69PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 12 October 2011 © NXP B.V. 2011. All rights reserved. 21 of 24 BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. BCP69_BC869_BC69PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 12 October 2011 © NXP B.V. 2011. All rights reserved. 22 of 24 BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BCP69_BC869_BC69PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 12 October 2011 © NXP B.V. 2011. All rights reserved. 23 of 24 NXP Semiconductors BCP69; BC869; BC69PA 20 V, 2 A PNP medium power transistors 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 13 Test information . . . . . . . . . . . . . . . . . . . . . . . . 16 Quality information . . . . . . . . . . . . . . . . . . . . . 16 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16 Packing information . . . . . . . . . . . . . . . . . . . . 17 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 21 Legal information. . . . . . . . . . . . . . . . . . . . . . . 22 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 22 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Contact information. . . . . . . . . . . . . . . . . . . . . 23 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 12 October 2011 Document identifier: BCP69_BC869_BC69PA