SHINDENGEN Schottky Rectifiers (SBD) DF10SC9 Dual OUTLINE DIMENSIONS Case : STO-220 Unit : mm 90V 10A FEATURES ● SMT ● Tj150℃ ● PRRSM ● High avalanche guaranteed current capacity with Small Package APPLICATION ● Switching power supply ● DC/DC converter ● Home Appliances, Office Equipment ● Telecommunication RATINGS ●Absolute Maximum Ratings (If not specified Tc=25℃) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj Maximum Reverse Voltage VRM Repetitive Peak Surge Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 Average Rectified Forward Current IO 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=131℃ Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125℃ Repetitive Peak Surge Reverse Power PRRSM Pulse width 10μs, Rating of per diode, Tj=25℃ Ratings -55〜150 150 90 100 10 150 330 ●Electrical Characteristics (If not specified Tc=25℃) Item Symbol Conditions Forward Voltage VF IF=5A, Pulse measurement, Rating of per diode IR VR=VRM, Pulse measurement, Rating of per diode Reverse Current Junction Capacitance Cj f=1MHz, VR =10V, Rating of per diode Thermal Resistance θjc junction to case Ratings Unit Max.0.75 V Max.3 mA Typ.185 pF Max.1.2 ℃/W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Unit ℃ ℃ V V A A W DF10SC9 Forward Voltage Forward Current IF [A] 10 1 Tc=150°C [MAX] Tc=150°C [TYP] Tc=25°C [MAX] Tc=25°C [TYP] Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 Forward Voltage VF [V] 1.2 1.4 1.6 Junction Capacitance Cj [pF] 100 1000 1 10 Junction Capacitance Reverse Voltage VR [V] DF10SC9 100 f=1MHz Tc=25°C TYP per diode DF10SC9 Reverse Current 1000 Tc=150°C [MAX] 100 Tc=150°C [TYP] Reverse Current IR [mA] Tc=125°C [TYP] 10 Tc=100°C [TYP] 1 Tc=75°C [TYP] 0.1 Pulse measurement per diode 0.01 0 20 40 60 Reverse Voltage VR [V] 80 100 DF10SC9 Reverse Power Dissipation Reverse Power Dissipation PR [W] 60 DC D=0.05 0.1 50 0.2 40 0.3 30 0.5 20 SIN 0.8 10 0 0 20 40 60 80 100 120 Reverse Voltage VR [V] Tj = 150°C 0 VR tp D=tp /T T DF10SC9 Forward Power Dissipation 16 Forward Power Dissipation PF [W] 14 12 D=0.8 10 0.3 DC SIN 0.5 0.2 8 0.05 0.1 6 4 2 0 0 2 4 6 8 10 12 14 16 Average Rectified Forward Current IO [A] Tj = 150°C IO 0 tp D=tp /T T DF10SC9 Derating Curve Average Rectified Forward Current IO [A] 20 DC 15 D=0.8 0.5 SIN 10 0.3 0.2 0.1 5 0.05 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [°C] VR = 45V IO 0 0 VR tp D=tp /T T DF10SC9 Peak Surge Forward Capability IFSM 200 10ms 10ms Peak Surge Forward Current IFSM [A] 1 cycle non-repetitive, sine wave, Tj=125°C before surge current is applied 150 100 50 0 1 2 5 10 20 Number of Cycles [cycles] 50 100 SBD Repetitive Surge Reverse Power Derating Curve 120 PRRSM Derating [%] 100 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [°C] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP SBD Repetitive Surge Reverse Power Capability PRRSM(t p) / PRRSM(t p=10µs) Ratio 10 1 0.1 1 10 100 Pulse Width t p [µs] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP