ISOCOM CNX83AG Optically coupled isolator phototransistor output Datasheet

CNX83AG
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
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UL recognised, File No. E91231
Dimensions in mm
2.54
7.0
6.0
'X' SPECIFICATION APPROVALS
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VDE 0884 approval pending
1
2
6
5
3
4
1.2
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EN60950 approval pending
DESCRIPTION
The CNX83AG optically coupled isolator
consists of an infrared light emitting diode and
a NPN silicon photo transistor in a standard 6
pin dual in line plastic package.
FEATURES
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High Current Transfer Ratio (40% min)
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Low Saturation Voltage suitable for TTL
integrated circuits
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High BVCEO (50V min)
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High Isolation Voltage (5.3kVRMS ,7.5kVPK )
7.62
7.62
6.62
4.0
3.0
0.5
0.26
3.0
0.5
3.35
10.16
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
APPLICATIONS
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DC motor controllers
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Industrial systems controllers
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Signal transmission between systems of
different potentials and impedances
Forward Current
Reverse Voltage
Power Dissipation
60mA
6V
105mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Collector-base Voltage BVCBO
Emitter-collector Voltage BVECO
Power Dissipation
50V
70V
6V
160mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
13/12/00
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail [email protected]
http://www.isocom.com
DB92513-AAS/A1
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
Input
Output
Coupled
PARAMETER
MIN TYP MAX UNITS
Forward Voltage (VF)
Reverse Voltage (VR)
Reverse Current (IR)
6
Collector-emitter Breakdown (BVCEO)
( Note 2 )
Collector-base Breakdown (BVCBO)
Emitter-collector Breakdown (BVECO)
Collector-emitter Dark Current (ICEO)
Current Transfer Ratio (IC / IF )
(Note 2)
1.2
1.5
TEST CONDITION
V
V
µA
IF = 10mA
IR = 10µA
VR = 6V
50
V
IC = 1mA
70
6
V
V
nA
IC = 100µA
IE = 100µA
VCE = 10V
10
50
0.4
10mA IF , 0.4V VCE
10mA IF , 5V VCE
1.5
Collector-emitter Saturation VoltageVCE (SAT)
Input to Output Isolation Voltage VISO
Input-output Isolation Resistance RISO
Turn-on Time
Turn-off Time
Turn-on Time
Turn-off Time
Note 1
Note 2
13/12/00
ton
toff
ton
toff
0.4
5300
7500
5x1010
3
3
12
12
V
10mA IF , 4mA IC
VRMS
VPK
Ω
See note 1
See note 1
VIO = 500V (note 1)
µs
µs
µs
µs
VCC = 5V , IC = 2mA ,
RL = 100Ω
VCC = 5V , IC = 2mA ,
RL = 1kΩ
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
DB92513-AAS/A1
Collector Power Dissipation vs. Ambient Temperature
Collector Current vs. Collector-emitter Voltage
150
100
50
50
30
40
20
30
15
20
10
10
IF = 5mA
0
0
-30
0
25
50
75
100
0
125
6
8
Collector-emitter Saturation
Voltage vs. Ambient Temperature
60
50
40
30
20
0
-30
0
25
50
75
100
125
Collector-emitter saturation voltage V
CE(SAT)
(V)
Forward Current vs. Ambient Temperature
10
10
0.28
0.24
IF = 10mA
IC = 4mA
0.20
0.16
0.12
0.08
0.04
0
-30
Ambient temperature TA ( °C )
0
25
50
75
100
Ambient temperature TA ( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative Current Transfer Ratio
vs. Forward Current
2.8
1.5
IF = 10mA
VCE = 0.4V
Relative current transfer ratio
Relative current transfer ratio
4
Collector-emitter voltage VCE ( V )
70
1.0
0.5
2.4
2.0
1.6
1.2
0.8
VCE = 0.4V
TA = 25°C
0.4
0
0
-30
13/12/00
2
Ambient temperature TA ( °C )
80
Forward current I F (mA)
TA = 25°C
50
Collector current I C (mA)
Collector power dissipation P C (mW)
200
0
25
50
75
Ambient temperature TA ( °C )
100
1
2
5
10
20
50
Forward current IF (mA)
DB92513-AAS/A1
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