ON AMIS-30600 Lin transceiver Datasheet

AMIS-30600
LIN Transceiver
General Description
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PIN ASSIGNMENT
RxD
1
8
INH
EN
2
7
VBB
6
LIN
5
GND
VCC
TxD
3
AMIS−
30600
The single−wire transceiver AMIS−30600 is a monolithic integrated
circuit in a SOIC−8 package. It works as an interface between the
protocol controller and the physical bus.
The AMIS−30600 is especially suitable to drive the bus line in LIN
systems in automotive and industrial applications. Further it can be
used in standard ISO9141 systems.
In order to reduce the current consumption the AMIS−30600 offers
a stand−by mode. A wake−up caused by a message on the bus pulls the
INH−output high until the device is switched to normal operation
mode.
The transceiver is implemented in I2T100 technology enabling both
high−voltage analog circuitry and digital functionality to co−exist on
the same chip.
The AMIS−30600 provides an ultra−safe solution to today’s
automotive in−vehicle networking (IVN) requirements by providing
unlimited short circuit protection in the event of a fault condition.
4
Features
• LIN−Bus Transceiver
PC20041204.3
LIN compliant to specification rev. 1.3 and rev. 2.0
I2T high−voltage technology
♦ Bus voltage $ 40 V
♦ Transmission rate up to 20kbaud
♦ SOIC−150−8 package
Protection
♦ Thermal shutdown
♦ Indefinite short circuit protection to supply and ground
Load dump protection (45 V)
Power Saving
♦ Operating voltage = 4.75 to 5.25 V
♦ Power down supply current < 50 mA
EMS Compatibility
♦ Integrated filter and hysteresis for receiver
EMI Compatibility
♦ Integrated slope control for transmitter
♦ Slope control dependant from Vbat to enable maximum capacitive
load
These are Pb−Free Devices
♦
(Top View)
♦
•
•
•
•
•
•
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
February, 2010 − Rev. 7
1
Publication Order Number:
AMIS−30600/D
AMIS−30600
8
V BB
3
7
Thermal
shutdown
State
&
Wake−up
Control
INH
10 k W
30 k W
2
EN
V CC
COMP
1
RxD
VCC
40 k W
4
TxD
6
Filter
LIN
AMIS−30600
Slope
Control
5
PC20050113.3
GND
Figure 1. Block Diagram
Master Node
IN
VBAT
5V−reg
10 mF
100 nF
V BB INH
1 kW
7
LIN
AMIS−
1 nF
30600
GND
2
5
5V−reg
100 nF
V BB INH
7
4
3
EN
1
LIN
LIN
controller
6
AMIS−
30600
4
2
2
GND
GND
GND
V CC
V CC
8
RxD
TxD
OUT
10 mF
3
1
6
IN
V CC
V CC
8
Slave Node
VBAT
OUT
5
RxD
TxD
EN
LIN
controller
2
GND
GND
KL30
LIN−BUS
PC20050113.5
KL31
Figure 2. Application Diagram
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2
AMIS−30600
Table 1. PIN LIST AND DESCRIPTIONS
Pin
Name
Description
1
RxD
Receive data output; low in dominant state
2
EN
Enable input; transceiver in normal operation mode when high
3
VCC
5V supply input
4
TxD
Transmit data input; low in dominant state; internal 40 kW pullup
5
GND
Ground
6
LIN
LIN bus output/input; low in dominant state; internal 30 kW pullup
7
VBB
Battery supply input
8
INH
Inhibit output; to control a voltage regulator; becomes high when wake−up via LIN bus occurs
Table 2. ABSOLUTE MAXIMUM RATINGS
Min
Max
Unit
VCC
Symbol
Supply Voltage
Parameter
Conditions
−0.3
+7
V
VBB
Battery Supply Voltage
−0.3
+40
V
VLIN
DC Voltage at Pin LIN
0 < VCC < 5.50 V
−40
+40
V
VINH
DC Voltage at Pin INH
0 < VCC < 5.50 V
−0.3
VBB + 0.3
V
VTxD
DC Voltage at Pin TxD
0 < VCC < 5.50 V
−0.3
VCC + 0.3
V
VRxD
DC Voltage at Pin RxD
0 < VCC < 5.50 V
−0.3
VCC + 0.3
V
VEN
DC Voltage at Pin EN
0 < VCC < 5.50 V
−0.3
VCC + 0.3
V
Vesd(LIN)
Electrostatic Discharge Voltage at LIN Pin
(Note 1)
−4
+4
kV
Vesd
Electrostatic Discharge Voltage at All Other Pins
(Note 1)
−4
+4
kV
Vtran(LIN)
Transient Voltage at Pin LIN
(Note 2)
−150
+150
V
Vtran(VBB)
Transient Voltage at Pin VBB
(Note 3)
−150
+150
V
Tamb
Ambient Temperature
−40
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Standardized Human Body Model system ESD pulses in accordance to IEC 1000.4.2.
2. Applied transient waveforms in accordance with “ISO 7637 parts 1 & 3”, capacitive coupled test pulses 1 (−100 V), 2 (+100 V), 3a (−150 V),
and 3b (+150 V). See Figure 8.
3. Applied transient waveforms in accordance with “ISO 7637 parts 1 & 3”, direct coupled test pulses 1 (−100 V), 2 (+75 V), 3a (−150 V), 3b
(+150 V), and 5 (+80 V). See Figure 8.
Table 3. OPERATING RANGE
Symbol
Parameter
Min
Typ
Max
Unit
VCC
Supply Voltage
4.75
+5.25
V
VBB
Battery Supply Voltage
7.3
+18
V
TJ
Maximum Junction Temperature
−40
+150
°C
Tjsd
Thermal Shutdown Temperature
+150
Rthj−a
Thermal Resistance Junction−to−Ambient
+170
185
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3
+190
°C
°C/W
AMIS−30600
APPLICATION INFORMATION
POWER
UP
INH = H
Rx = LIN data
POWER
UP
VBB= on
and
VCC = on
VBB= on
INH = H
Rx = LIN data
EN = H
EN = H
NORMAL
MODE
STANDBY
MODE
EN= L
INH = H
Rx = H
NORMAL
MODE
STANDBY
MODE
EN= L
INH = H B VCC = on
Rx = H
EN = H
EN = L
Wake−up over bus
t > t wake
SLEEP
MODE
SLEEP
MODE
INH = Float
Rx = H
PC20061221.1
Wake−up over bus
t > t wake
EN = L
INH = Float
B VCC= off
Rx = Float
V CC= on
permanently
V CCcontrolled by INH:
INH = Float B V CC= off
INH = H B V CC= on
Figure 3. State Diagrams
In order to reduce the current consumption, the
AMIS−30600 offers a sleep operation mode. This mode is
selected by switching the enable input EN low (see Figure
4).
An external voltage regulator can be controlled via the
INH output in order to minimize the current consumption of
the whole application in sleep mode (see Figure 2). A
wake−up caused by a message on the communication bus
automatically enables the voltage regulator by switching the
INH output high (see Figure 3). In case the voltage regulator
control input is not connected to the INH output, or the
microcontroller is active respectively, the AMIS−30600 can
be set in normal operation mode by EN = H (see Figure 3).
The AMIS−30600 has a slope which depends of the
supply Vbat. This implementation guarantees biggest
slope−time under all load conditions. The rising slope has to
be slower then the external RC−time−constant, otherwise
the slope will be terminated by the RC−time−constant and no
longer by the internal slope−control. This would affect the
symmetry of the bus−signal and would limit the maximum
allowed bus−speed.
A capacitor of 10 mF at the supply voltage input VB
buffers the input voltage. In combination with the required
reverse polarity diode this prevents the device from
detecting power down conditions in case of negative
transients on the supply line.
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4
AMIS−30600
Table 4. DC CHARACTERISTICS VCC = 4.75 V to 5.25 V; VBB = 7.3 V to 18 V,VEN < VENon, TA = −40°C to +125°C; RL = 500 W
unless specified otherwise. All voltages with respect to ground, positive current flowing into pin, unless otherwise specified.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
SUPPLY (Pin VCC and Pin VBB)
ICC
5 V Supply Current
Dominant; VTxD = 0 V
Recessive; VTxD = VCC
400
250
700
500
μA
IBB
Battery Supply Current
Dominant; VTxD = 0 V
Recessive; VTxD = VCC
1
100
1.5
200
mA
μA
IBB
Battery Supply Current
Sleep Mode; VEN = 0 V
35
55
μA
ICC
5 V Supply Current
Sleep Mode; VEN = 0 V
0.25
1
μA
TRANSMITTER DATA INPUT (Pin TxD)
VIH
High−Level Input Voltage
Output Recessive
0.7 x VCC
−
VCC
V
VIL
Low−Level Input Voltage
Output Dominant
0
−
0.3 x VCC
V
RTxD,pu
Pullup Resistor to VCC
24
60
k
0.8 x VCC
VCC
V
0.2 x VCC
V
RECEIVER DATA OUTPUT (Pin RxD)
VOH
High−Level Output Voltage
IRXD = −10 mA
VOL
Low−Level Output Voltage
IRXD = 5 mA
0
0.7 x VCC
−
VCC
V
0
−
0.3 x VCC
V
6
10
15
k
0.5
1.0
V
−5.0
−
5.0
μA
0.9 x VBB
−
VBB
V
ENABLE INPUT (Pin EN)
VEN,on
High−Level Input Voltage
Normal Mode
VEN,off
Low−Level Input Voltage
Low Power Mode
REN,pd
Pulldown Resistor−to−GND
INHIBIT OUTPUT (Pin INH)
VINH,d
High−Level Voltage Drop:
VINH,d = VBB − VINH
IINH = − 0.15 mA
IINH,lk
Leakage Current
Sleep Mode; VINH = 0 V
BUS LINE (Pin LIN)
Vbus,rec
Recessive Bus Voltage at Pin
LIN
VTxD = VCC
Vbus,dom
Dominant Output Voltage at Pin
LIN
VTxD = 0 V ; VBB = 7.3 V
VTxD = 0 V; VBB = 18 V;
RL = 500 W
0
−
1.2
2.0
V
Ibus,sc
Bus Short−Circuit Current
Vbus,short = 18 V
40
85
130
mA
Ibus,lk
Bus Leakage Current
VCC = VBB = 0V; Vbus = −8 V
VCC = VBB = 0V; Vbus = 20 V
−400
−200
5
20
20
30
47
kW
VTxD = 0 V
μA
Rbus
Bus Pullup Resistance; Note 4
Vbus,rd
Receiver Threshold:
Recessive−to−Dominant
0.4 x VBB
0.48 x VBB
0.6 x VBB
V
Vbus,dr
Receiver Threshold:
Dominant−to−Recessive
0.4 x VBB
0.52 x VBB
0.6 x VBB
V
Vq
Receiver Hysteresis
0.05 x VBB
0.08 x VBB
0.175 x VBB
V
VWAKE
Wake−up Threshold Voltage
0.6 x VBB
V
Vbus,hys = Vbus,rec − Vbus,dom
0.4 x VBB
4. Guaranteed by design. The total resistance of the pullup resistor and the serial diode is measured on ATE.
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5
AMIS−30600
Table 5. AC ELECTRICAL CHARACTERISTICS ACCORDING TO LIN V13 VCC = 4.75 V to 5.25 V; VBB = 7.3 V to 18 V,VEN
< VENon, TA = −40°C to +125°C; RL = 500 W unless otherwise specified. Load for slope definitions (typical loads) = [L1] 1 nF 1 kW / [L2]
6.8 nF 600 W / [L3] 10 nF 500 W.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
t_slope_F
Slope Time Falling Edge; (Note 5)
See Figure 5
4
−
24
ms
t_slope_R
Slope Time Rising Edge; (Note 5)
See Figure 5
4
−
24
ms
t_slope_Sym
Slope Time Symmetry; (Note 5)
−8
−
+8
ms
T_rec_F
Propagation Delay Bus Dominant to
RxD = Low; (Note 6)
See Figures 4 and 5
2
6
ms
T_rec_R
Propagation Delay Bus Recessive to
RxD = High; (Note 6)
See Figures 4 and 5
6
6
ms
tWAKE
Wake−up Delay Time
100
200
ms
t_slope_F − t_slope_R
30
5. Guaranteed by design; not measured for all supply/load combinations on ATE.
6. Not measured on ATE.
Table 6. AC ELECTRICAL CHARACTERISTICS ACCORDING TO LIN v2.0 VCC = 4.75 V to 5.25 V; VBB = 7.3 V to
18 V,VEN < VENon, TA = −40°C to +125°C; RL = 500 W unless otherwise specified. Load for slope definitions (typical loads) = [L1] 1 nF
1 kW / [L2] 6.8 nF 600 W / [L3] 10 nF 500 W.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
DYNAMIC RECEIVER CHARACTERISTICS ACCORDING TO LIN v2.0
trx_pdr
Propagation Delay Bus Dominant to
RxD = Low; (Note 7)
See Figure 6
6
ms
trx_pdf
Propagation Delay Bus Recessive to
RxD = High; (Note 7)
See Figure 6
6
ms
trx_sym
Symmetry of Receiver Propagation Delay
+2
ms
trx_pdr − trx_pdf
−2
−
DYNAMIC TRANSMITTER CHARACTERISTICS ACCORDING TO LIN v2.0
D1
Duty Cycle 1 = tBus_rec(min)/(2 x tBit);
See Figure
D1
Duty Cycle 1 = tBus_rec(min)/(2 x tBit);
See Figure 6
D2
Duty Cycle 2 = tBus_rec(max)/(2 x tBit);
See Figure 6
0.396
0.5
THRec(max) = 0.744 x Vbat;
THDom(max) = 0.581 x Vbat;Vbat
= 7.0 V to 18 V; tBit = 50 ms
THRec(max) = 0.744 x Vbat;
THDom(max) = 0.581 x Vbat;Vbat
= 7.0V; tBit = 50 ms;
tamb = −40°C
0.366
0.5
THRec(min) = 0.284 x Vbat;
THDom(min) = 0.422 x Vbat;Vbat
= 7.6 V to 18 V; tBit = 50 ms;
0.5
0.581
7. Not measured on ATE.
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6
AMIS−30600
Vbat
V BB
100 nF
7
+5 V
RL
3
100 nF
AMIS −
2
EN
3 INH
4
TxD
LIN
6
30600
5
1
RxD
RL
CL
L1
1 kW
1 nF
L2
600 W
6.8 nF
L3
500 W
10 nF
Load
CL
GND
20 pF
PD20080123
.1
Figure 4. Test Circuit for Timing Characteristics
LIN
50%
t
RxD
T_rec_F
T_rec_R
50%
50%
t
PC20041206
.1
LIN
60%
60%
40%
40%
T_slope_F
T_slope_R
t
PC 20041206.2
Figure 5. Timing Diagram for AC Characteristics According to LIN 1.3
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AMIS−30600
TxD
tBIT
tBIT
50%
tBUS_DOM(max)
LIN
t
tBUS_REC(min)
THREC(max)
THDOM(max)
Thresholds
receiver 1
THREC(max)
THDOM(max)
Thresholds
receiver 2
t
tBUS_DOM(min)
RxD
( receiver 2)
tBUS_REC(max)
50%
trx_pdf
trx_pdr
t
PD20080319.1
Figure 6. Timing Diagram for AC Characteristics According to LIN 2.0
+13.5 V
V BB
100 nF
V CC
+5.25 V
7
3
Transient
1 kW
100 nF
TxD
EN
AMIS−
6
LIN
30600
4
Generator
1 nF
1 nF
3
2
1
INH
5
GND
RxD
20 pF
PC20050113.2
Figure 7. Test Circuit for Transient Measurements
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8
AMIS−30600
DEVICE ORDERING INFORMATION
Temperature Range
Package Type
Shipping†
AMIS30600LINI1G
−40°C − 125°C
SOIC−8
(Pb−Free)
96 Tube / Tray
AMIS30600LINI1RG
−40°C − 125°C
SOIC−8
(Pb−Free)
3000 / Tape & Reel
Part Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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9
AMIS−30600
PACKAGE DIMENSIONS
SOIC 14
CASE 751AP−01
ISSUE A
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10
DATE 29 AUG 2008
AMIS−30600
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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AMIS−30600/D