PROFET® BTS 410 E2
Smart Highside Power Switch
Features
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Vbb(AZ)
Vbb(on)
RON
IL(ISO)
IL(SCr)
65
V
4.7 ... 42 V
220 mΩ
1.8
A
5
A
TO-220AB/5
5
Standard
5
1
Straight leads
1
5
SMD
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
+ V bb
Voltage
Overvoltage
Current
Gate
source
protection
limit
protection
3
V Logic
2
Voltage
Charge pump
sensor
Level shifter
Rectifier
IN
OUT
5
Temperature
sensor
Open load
ESD
4
Limit for
unclamped
ind. loads
Logic
Load
detection
ST
Short circuit
detection
GND
PROFET
1
Signal GND
1)
Load GND
With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistors in series with IN and ST
connections, reverse load current limited by connected load.
Semiconductor Group
1 of 16
2003-Oct-01
BTS 410 E2
Pin
Symbol
Function
1
GND
-
Logic ground
2
IN
I
Input, activates the power switch in case of logical high signal
3
Vbb
+
Positive power supply voltage,
the tab is shorted to this pin
4
ST
S
Diagnostic feedback, low on failure
5
OUT
(Load, L)
O
Output to the load
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 3)
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V
RI3)= 2 Ω, RL= 6.6 Ω, td= 400 ms, IN= low or high
Load current (Short circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC), TC ≤ 25 °C
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150°C, TC = 150°C const.
IL = 1.8 A, ZL = 2.3 H, 0 Ω:
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
all other pins:
Symbol
Vbb
VLoad dump4)
Values
65
100
Unit
V
V
self-limited
-40 ...+150
-55 ...+150
50
A
°C
4.5
1
2
J
kV
VIN
IIN
IST
-0.5 ... +6
±5.0
±5.0
V
mA
Symbol
Values
typ
max
-2.5
-75
35
--
Unit
IL
Tj
Tstg
Ptot
EAS
VESD
W
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
Thermal Characteristics
Parameter and Conditions
Thermal resistance
2)
3)
4)
5)
chip - case: RthJC
junction - ambient (free air): RthJA
SMD version, device on PCB5):
min
----
K/W
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.
RI = internal resistance of the load dump test pulse generator
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Semiconductor Group
2
2003-Oct-01
BTS 410 E2
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 1.6 A
Tj=25 °C: RON
Tj=150 °C:
Nominal load current, ISO Norm (pin 3 to 5)
VON = 0.5 V, TC = 85 °C
Output current (pin 5) while GND disconnected or
GND pulled up, Vbb=30 V, VIN= 0, see diagram
page 7, Tj =-40...+150°C
Turn-on time
IN
to 90% VOUT:
to 10% VOUT:
Turn-off time
IN
RL = 12 Ω, Tj =-40...+150°C
Slew rate on
10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C
Slew rate off
70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C
--
190
220
390
440
mΩ
IL(ISO)
IL(GNDhigh)
1.6
--
1.8
--
-1
A
mA
ton
toff
12
5
---
125
85
µs
dV /dton
--
--
3
V/µs
-dV/dtoff
--
--
6
V/µs
Tj =-40...+150°C:
Tj =25°C:
Tj =-40...+150°C:
Undervoltage restart
Tj =-40...+150°C:
Undervoltage restart of charge pump
see diagram page 13
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown
Tj =-40...+150°C:
Overvoltage restart
Tj =-40...+150°C:
Overvoltage hysteresis
Tj =-40...+150°C:
Overvoltage protection7)
Tj =-40...+150°C:
Ibb=4 mA
Standby current (pin 3)
Tj=-40...+25°C:
Tj= 150°C:
VIN=0
Vbb(on)
Vbb(under)
4.7
2.9
2.7
---
----5.6
42
4.5
4.7
4.9
6.0
V
V
V
V
∆Vbb(under)
--
0.1
--
V
Vbb(over)
Vbb(o rst)
∆Vbb(over)
Vbb(AZ)
42
40
-65
--0.1
70
52
----
V
V
V
V
IL(off)
10
18
--
15
25
20
µA
Leakage output current (included in Ibb(off))
VIN=0
Operating current (Pin 1)8), VIN=5 V,
Tj =-40...+150°C
----
IGND
--
1
2.1
mA
Operating Parameters
Operating voltage 6)
Undervoltage shutdown
6)
7)
Vbb(u rst)
Vbb(ucp)
Ibb(off)
µA
At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V
Meassured without load. See also VON(CL) in table of protection functions and circuit diagram page 7.
Semiconductor Group
3
2003-Oct-01
BTS 410 E2
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Protection Functions9)
Initial peak short circuit current limit (pin 3 to 5)10), IL(SCp)
( max 450 µs if VON > VON(SC) )
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Repetitive overload shutdown current limit
IL(SCr)
VON= 8 V, Tj = Tjt (see timing diagrams, page 11)
Short circuit shutdown delay after input pos. slope
VON > VON(SC),
Tj =-40..+150°C: td(SC)
Values
min
typ
max
Unit
9
-4
-12
--
23
-15
A
--
5
--
A
--
--
450
µs
min value valid only, if input "low" time exceeds 60 µs
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150°C:
IL= 1 A, Tj =-40..+150°C:
Short circuit shutdown detection voltage
(pin 3 to 5)
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1) 11)
VON(CL)
61
--
68
--
73
75
V
VON(SC)
Tjt
∆Tjt
-Vbb
-150
---
8.5
-10
--
---32
V
°C
K
V
Diagnostic Characteristics
Open load detection current
IL (OL)
2
--
150
(on-condition)
Tj=-40 ..150°C:
mA
8)
Add IST, if IST > 0, add IIN, if VIN>5.5 V
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
10) Short circuit current limit for max. duration of t
d(SC) max=450 µs, prior to shutdown
11) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 7).
9)
Semiconductor Group
4
2003-Oct-01
BTS 410 E2
Parameter and Conditions
Symbol
Values
min
typ
max
VIN(T+)
VIN(T-)
∆ VIN(T)
IIN(off)
IIN(on)
td(ST SC)
1.5
1.0
-1
10
--
--0.5
-25
--
2.4
--30
70
450
V
V
V
µA
µA
µs
td(ST)
300
--
1400
µs
VST(high)
VST(low)
5.0
--
6
--
-0.4
V
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Input and Status Feedback12)
Input turn-on threshold voltage
Tj =-40..+150°C:
Input turn-off threshold voltage
Tj =-40..+150°C:
Input threshold hysteresis
Off state input current (pin 2), VIN = 0.4 V
On state input current (pin 2), VIN = 5 V
Status invalid after positive input slope
(short circuit)
Tj=-40 ... +150°C:
Status invalid after positive input slope
(open load)
Tj=-40 ... +150°C:
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +50 uA:
ST low voltage Tj =-40...+150°C, IST = +1.6 mA:
12)
Unit
If a ground resistor RGND is used, add the voltage drop across this resistor.
Semiconductor Group
5
2003-Oct-01
BTS 410 E2
Truth Table
Status
Input-
Output
level
level
412
B2
410
D2
410
E2/F2
410
G2
410
H2
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
H
H
L
H
H
L
L
H
L
L
L15)
L15)
L
L
H
H
H
L
H
L
H
H (L14))
L
L
15)
L
L15)
L
L
H
H
H
L
H
L
H
H (L14))
L
L
H
H
H
H
H
H
H
L
H
H
H
H (L14))
L
L
H
H
H
H
H
H
L
H
H
L
L
H
L
L
H
H
H
H
Normal
operation
Open load
Short circuit
to GND
Short circuit
to Vbb
Overtemperature
Undervoltage
Overvoltage
L = "Low" Level
H = "High" Level
13)
H
L
L
H
H
L
L
L
L
L
L
X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)
Terms
Input circuit (ESD protection)
Ibb
I IN
2
V
bb
IN
VST
IN
Vbb
IN
IL
PROFET
I ST
V
R
3
4
OUT
I
ESDZDI1 ZDI2
VON
I
5
ST
I
GND
GND
1
R
IGND
VOUT
ZDI1 6 V typ., ESD zener diodes are not to be used as
voltage clamp at DC conditions. Operation in this mode
may result in a drift of the zener voltage (increase of up
to 1 V).
GND
13)
Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for
open load detection.
14) Low resistance short V to output may be detected in ON-state by the no-load-detection
bb
15) No current sink capability during undervoltage shutdown
Semiconductor Group
6
2003-Oct-01
BTS 410 E2
Overvolt. and reverse batt. protection
Status output
+ V bb
+5V
V
R IN
R ST(ON)
Logic
ST
R ST
GND
Z2
IN
ST
V
ESDZD
PROFET
Z1
GND
ESD-Zener diode: 6 V typ., max 5 mA;
RST(ON) < 250 Ω at 1.6 mA, ESD zener diodes are not
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
R GND
Signal GND
VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND= 150 Ω, RIN,
RST= 15 kΩ
Open-load detection
Short circuit detection
ON-state diagnostic condition: VON < RON * IL(OL); IN
high
Fault Condition: VON > 8.5 V typ.; IN high
+ V bb
+ V bb
V
ON
VON
ON
OUT
Logic
unit
Short circuit
detection
OUT
Open load
detection
Logic
unit
Inductive and overvoltage output clamp
+ V bb
V
GND disconnect
Z
VON
3
OUT
GND
2
IN
PROFET
Vbb
PROFET
4
VON clamped to 68 V typ.
V
bb
V
IN
V
ST
OUT
5
ST
GND
1
V
GND
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.
Semiconductor Group
7
2003-Oct-01
BTS 410 E2
Inductive Load switch-off energy
dissipation
GND disconnect with GND pull up
E bb
3
2
E AS
Vbb
IN
OUT
PROFET
4
IN
5
ST
PROFET
GND
=
1
ELoad
Vbb
OUT
ST
GND
V
V
bb
V
IN ST
V
ZL
GND
{
EL
L
RL
ER
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Energy stored in load inductance:
Vbb disconnect with energized inductive
load
2
EL = 1/2·L·I L
While demagnetizing load inductance, the energy
dissipated in PROFET is
3
high
2
Vbb
IN
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
OUT
PROFET
4
with an approximate solution for RL > 0 Ω:
5
ST
EAS=
GND
1
V
IL· L
IL·RL
·(V + |VOUT(CL)|)· ln (1+
)
|VOUT(CL)|
2·RL bb
Maximum allowable load inductance for
a single switch off
bb
L = f (IL ); Tj,start = 150°C,TC = 150°C const.,
Vbb = 12 V, RL = 0 Ω
Normal load current can be handled by the PROFET
itself.
L [mH]
10000
Vbb disconnect with charged external
inductive load
high
2
S
3
IN
Vbb
PROFET
4
1000
OUT
5
D
ST
100
GND
1
V
bb
10
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
1
1
Semiconductor Group
8
2
3
4
5
6
IL [A]
2003-Oct-01
BTS 410 E2
Typ. transient thermal impedance chip case
ZthJC = f(tp, D), D=tp/T
ZthJC [K/W]
10
1
D=
0.5
0.2
0.1
0.05
0.02
0.01
0
0.1
0.01
1E-5
1E-4
1E-3
1E-2
1E-1
1E0
1E1
tp [s]
Semiconductor Group
9
2003-Oct-01
BTS 410 E2
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection with 150 Ω in GND connection, protection against loss of
ground
Type
Logic version
BTS 412 B2 410D2 410E2 410F2 410G2 410H2
Overtemperature protection with hysteresis
Tj >150 °C, latch function16)17)
Tj >150 °C, with auto-restart on cooling
Short circuit to GND protection
B
D
X
X
E
F
G
X
X
X
X
X
X
X
X
X
308
H
X
switches off when VON>3.5 V typ. and Vbb> 7 V
typ16) (when first turned on after approx. 150 µs)
switches off when VON>8.5 V typ.16)
(when first turned on after approx. 150 µs)
307
X
X
X
Achieved through overtemperature protection
X
Open load detection
in OFF-state with sensing current 30 µA typ.
in ON-state with sensing voltage drop across
power transistor
X
Undervoltage shutdown with auto restart
Overvoltage shutdown with auto restart18)
X
X
X
X
X
X
X
X
X
X
-
X
X
X
X
X
X
X
X
X
X
-
X
X
X
X
-19)
-19)
-19)
-19)
X
X
X
open load
X
X
X
X
X
X
X
X
undervoltage
X
X
-
-
-
-
X
-
overvoltage
X
X
-
-
-
-
-
-
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
overtemperature
X
X
short circuit to GND
X
short to Vbb
Status feedback for
Status output type
CMOS
Open drain
Output negative voltage transient limit
(fast inductive load switch off)
to Vbb - VON(CL)
X
X
X
X
X
X
Load current limit
high level (can handle loads with high inrush currents)
low level (better protection of application)
Protection against loss of GND
X
X
X
16)
Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch
between turn on and td(SC).
17) With latch function. Reseted by a) Input low, b) Undervoltage
18) No auto restart after overvoltage in case of short circuit
19) Low resistance short V to output may be detected in ON-state by the no-load-detection
bb
Semiconductor Group
10
2003-Oct-01
BTS 410 E2
Timing diagrams
Figure 2b: Switching an inductive load
Figure 1a: Vbb turn on:
IN
IN
t
V
bb
t
d(bb IN)
ST
d(ST)
*)
V
OUT
V
OUT
A
IL
ST open drain
I L(OL)
t
t
A
in case of too early VIN=high the device may not turn on (curve A)
td(bb IN) approx. 150 µs
*) if the time constant of load is too large, open-load-status may
occur
Figure 3a: Turn on into short circuit,
Figure 2a: Switching a lamp,
IN
IN
ST
ST
VOUT
V
OUT
td(SC)
I
I
L
L
t
t
td(SC) approx. -- µs if Vbb - VOUT > 8.5 V typ.
Semiconductor Group
11
2003-Oct-01
BTS 410 E2
Figure 4a: Overtemperature:
Reset if Tj <Tjt
Figure 3b: Turn on into overload,
IN
IL
IN
ST
I L(SCp)
IL(SCr)
V
OUT
T
J
ST
t
t
Heating up may require several seconds,
Vbb - VOUT < 8.5 V typ.
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
Figure 3c: Short circuit while on:
IN
IN
ST
t
d(ST)
ST
V
V OUT
I
IL
OUT
L
open
**)
t
t
**) current peak approx. 20 µs
Semiconductor Group
12
2003-Oct-01
BTS 410 E2
Figure 6b: Undervoltage restart of charge pump
Figure 5b: Open load: detection in ON-state, open
load occurs in on-state
VON(CL)
V on
IN
d(ST OL2)
on-state
V
bb(over)
off-state
t
off-state
ST
t
d(ST OL1)
V
OUT
V
V
bb(u rst)
V
I
normal
open
L
normal
V
bb(o rst)
bb(u cp)
bb(under)
V bb
t
charge pump starts at Vbb(ucp) =5.6 V typ.
td(ST OL1) = tbd µs typ., td(ST OL2) = tbd µs typ
Figure 7a: Overvoltage:
Figure 6a: Undervoltage:
IN
IN
V
Vbb
V ON(CL)
Vbb(over)
V bb(o rst)
bb
V
bb(under)
Vbb(u cp)
V
V
bb(u rst)
OUT
V OUT
ST
t
ST open drain
t
Semiconductor Group
13
2003-Oct-01
BTS 410 E2
Figure 9a: Overvoltage at short circuit shutdown:
IN
Vbb
V bb(o rst)
Output short to GND
V OUT
short circuit shutdown
IL
ST
t
Overvoltage due to power line inductance. No overvoltage autorestart of PROFET after short circuit shutdown.
Semiconductor Group
14
2003-Oct-01
BTS 410 E2
Package and Ordering Code
All dimensions in mm
Standard TO-220AB/5
BTS 410 E2
SMD TO-220AB/5, Opt. E3062 Ordering code
Ordering code
BTS410E2 E3062A T&R:
Q67060-S6102-A2
Changed since 04.96
Date Change
Mar.
EAS maximum rating and diagram
1997 and ZthJC diagram added
ESD capability (except Input)
specified to 2kV, RthJA SMD
specified
IL(GND high) max reduced from 10 to
1 mA
Option Overview table columns for
BTS307/308 added
Fig. 1a: Vout-spike at Vbb-turn-on
added
TO-220AB/5, Option E3043 Ordering code
BTS 410 E2 E3043
Semiconductor Group
Q67060-S6102-A4
Q67060-S6102-A3
15
2003-Oct-01
BTS 410 E2
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain
components and shall not be considered as a guarantee of
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limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
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For further information on technology, delivery terms and
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Due to technical requirements components may contain
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Infineon Technologies Components may only be used in lifesupport devices or systems with the express written
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components can reasonably be expected to cause the
failure of that life-support device or system, or to affect the
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human body, or to support and/or maintain and sustain
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assume that the health of the user or other persons may be
endangered.
Semiconductor Group
16
2003-Oct-01