APT10050JVFR 19A 0.500Ω Ω 1000V POWER MOS V ® S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. 27 2 T- D G SO "UL Recognized" ISOTOP ® • Fast Recovery Body Diode • 100% Avalanche Tested • Lower Leakage • Popular SOT-227 Package D G • Faster Switching S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT10050JVFR UNIT 1000 Volts Drain-Source Voltage 19 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 450 Watts Linear Derating Factor 3.6 W/°C VGSM PD TJ,TSTG 76 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 19 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 50 4 mJ 2500 STATIC ELECTRICAL CHARACTERISTICS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP MAX UNIT 1000 Volts 19 Amps (VGS = 10V, 0.5 ID[Cont.]) 0.500 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 Ohms µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com 11-2004 BVDSS Characteristic / Test Conditions 050-5599 Rev B Symbol DYNAMIC CHARACTERISTICS APT10050JVFR Characteristic Symbol Test Conditions MIN TYP MAX Ciss Input Capacitance VGS = 0V 6600 7900 Coss Output Capacitance VDS = 25V 595 830 Crss Reverse Transfer Capacitance f = 1 MHz 290 430 Qg Total Gate Charge VGS = 10V 335 500 Qgs Gate-Source Charge VDD = 0.5 VDSS Qgd Gate-Drain ("Miller") Charge ID = ID [Cont.] @ 25°C 29 165 45 250 VGS = 15V 16 32 t d(on) 3 Turn-on Delay Time tr Rise Time t d(off) Turn-off Delay Time tf VDD = 0.5 VDSS 13 26 ID = ID [Cont.] @ 25°C 59 90 RG = 0.6ý 8 16 TYP MAX Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions IS ISM Pulsed Source Current VSD Diode Forward Voltage dv/ MIN 19 Continuous Source Current (Body Diode) Peak Diode Recovery dt 1 2 dv/ 76 (Body Diode) dt UNIT Amps (VGS = 0V, IS = -ID [Cont.]) 1.3 Volts 5 18 V/ns t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 300 Tj = 125°C 600 Q rr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 1.7 Tj = 125°C 4.8 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 12 Tj = 125°C 19 ns µC Amps THERMAL / PACKAGE CHARACTERISTICS Characteristic Symbol MIN RθJC Junction to Case RθJA Junction to Ambient TYP MAX 0.28 40 VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 2500 13 D=0.5 0.1 0.2 0.05 0.1 0.05 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-5599 Rev B 11-2004 0.3 0.005 t1 0.01 SINGLE PULSE t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 10-5 10-4 lb•in 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 13.85mH, R = 25ý, Peak I = 19A j G L 5 I - -I [Cont.], di/ = 100A/µs, V S D DD - VDSS, Tj - 150°C, RG = 2.0ý, dt VR = 200V 0.02 °C/W Volts APT Reserves the right to change, without notice, the specifications and information contained herein. 0.01 UNIT 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT10050JVFR 50 VGS=5.5V, 10V & 15V 40 5V 30 20 4.5V 10 ID, DRAIN CURRENT (AMPERES) 40 VGS=5.5V, 10V & 15V 5V 30 20 4.5V 10 4V 4V 0 0 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 40 30 20 TJ = -55°C TJ = +125°C 10 TJ = +25°C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 20 16 12 8 4 0 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE V GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D 1.2 1.1 VGS=10V VGS=20V 1.0 0.9 0 10 20 30 40 50 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -50 1.2 2.5 I = 0.5 I [Cont.] D D V GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 25 1.3 1.1 1.0 0.9 11-2004 ID, DRAIN CURRENT (AMPERES) 50 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5599 Rev B ID, DRAIN CURRENT (AMPERES) 50 APT10050JVFR 30,000 10µS 50 OPERATION HERE LIMITED BY RDS (ON) 100µS 10 10,000 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 100 1mS 5 10mS 1 100mS TC =+25°C TJ =+150°C SINGLE PULSE .5 100 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE I = I [Cont.] D 16 VDS=100V VDS=200V 12 VDS=500V 8 4 0 500 Crss 1 5 10 50 100 500 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA D Coss 1,000 DC .1 20 Ciss 5,000 0 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 100 50 TJ =+150°C TJ =+25°C 10 5 1 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source 050-5599 Rev B 11-2004 30.1 (1.185) 30.3 (1.193) Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) "UL Recognized" File No. E145592 ISOTOP® is a Registered Trademark of SGS Thomson. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.