• ZENER DIODES BZV55 C2V4 thru BZV55 C75 •LEADLESS PACKAGE FOR SURFACE MOUNT • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Power Derating: 3.33 mW / °C above +50°C Forward Voltage: @ 200mA: 1.1 Volts maximum ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified. TYPE MAXIMUM DIFFERENTIAL RESISTANCE rdiff @ I Z ZENER VOLTAGE (NOTE 1) VZ @ I ZT VOLTS MIN MAX mA OHMS mA MAXIMUM REVERSE CURRENT IR @ VR µA VOLTS BZV55 BZV55 BZV55 BZV55 BZV55 C2V4 C2V7 C3V0 C3V3 C3V6 2.2 2.5 2.8 3.1 3.4 2.6 2.9 3.2 3.5 3.8 5 5 5 5 5 100 100 95 95 90 5 5 5 5 5 50 20 10 5 5 1 1 1 1 1 BZV55 BZV55 BZV55 BZV55 BZV55 C3V9 C4V3 C4V7 C5V1 C5V6 3.7 4.0 4.4 4.8 5.2 4.1 4.6 5.0 5.4 6.0 5 5 5 5 5 90 90 80 60 40 5 5 5 5 5 3 3 3 2 1 1 1 2 2 2 BZV55 BZV55 BZV55 BZV55 BZV55 C6V2 C6V8 C7V5 C8V2 C9V1 5.8 6.4 7.0 7.7 8.5 6.6 7.2 7.9 8.7 9.6 5 5 5 5 5 10 15 15 15 15 5 5 5 5 5 3 2 1 .700 .500 4 4 5 5 6 BZV55 BZV55 BZV55 BZV55 BZV55 C10 C11 C12 C13 C15 9.4 10.4 11.4 12.4 13.8 10.6 11.6 12.7 14.1 15.6 5 5 5 5 5 20 20 25 30 30 5 5 5 5 5 .200 .100 .100 .100 .050 7 8 8 8 10.5 BZV55 BZV55 BZV55 BZV55 BZV55 C16 C18 C20 C22 C24 15.3 16.8 18.8 20.8 22.8 17.1 19.1 21.2 23.3 25.6 5 5 5 5 5 40 45 55 55 70 5 5 5 5 5 .050 .050 .050 .050 .050 11.2 12.6 14.0 15.4 16.8 BZV55 BZV55 BZV55 BZV55 BZV55 C27 C30 C33 C36 C39 25.1 28.0 31.0 34.0 37.0 28.9 32.0 35.0 38.0 41.0 2 2 2 2 2 80 80 80 90 130 2 2 2 2 2 .050 .050 .050 .050 .050 18.9 21.0 23.1 25.2 27.3 BZV55 BZV55 BZV55 BZV55 BZV55 C43 C47 C51 C56 C62 40.0 44.0 48.0 52.0 58.0 46.0 50.0 54.0 60.0 66.0 2 2 2 2 2 150 170 180 200 215 2 2 2 2 2 .050 .050 .050 .050 .050 30.1 32.9 35.7 39.2 43.4 BZV55 C68 BZV55 C75 64.0 70.0 72.0 79.0 2 2 240 255 2 2 .050 .050 47.6 52.2 NOTE 1 Nominal Zener voltage is measured with the device junction in thermal equilibrium at an ambient temperature of 25°C + 3°C. DIM D F G G1 S MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1.70 0.063 0.067 0.41 0.55 0.016 0.022 3.30 3.70 .130 .146 2.54 REF. .100 REF. 0.03 MIN. .001 MIN. DESIGN DATA CASE: DO-213AA, Hermetically sealed glass case. (MELF, SOD-80, LL34) LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 100 ÞC/W maximum at L = 0 inch THERMAL IMPEDANCE: (ZOJX): 35 ÞC/W maximum POLARITY: Diode to be operated with the banded (cathode) end positive. MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) Of this Device is Approximately +6PPM/°C. The COE of the Mounting Surface System Should Be Selected To Provide A Suitable Match With This Device. 6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841 PHONE (978) 620-2600 FAX (978) 689-0803 WEBSITE: http://www.microsemi.com 165