DTC114EET1 Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC−75/SOT−416 package which is designed for low power surface mount applications. http://onsemi.com NPN SILICON BIAS RESISTOR TRANSISTORS PIN 3 COLLECTOR (OUTPUT) Features • • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC−75/SOT−416 Package Can be Soldered Using Wave or Reflow The Modified Gull−Winged Leads Absorb Thermal Stress During Soldering Eliminating the Possibility of Damage to the Die Pb−Free Packages are Available PIN 1 BASE (INPUT) 3 2 Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Value Unit 200 1.6 mW mW/°C 600 °C/W 300 2.4 mW mW/°C RqJA 400 °C/W TJ, Tstg −55 to +150 °C Collector Current R2 PIN 2 EMITTER (GROUND) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating R1 1 SC−75 (SOT−416) CASE 463 STYLE 1 THERMAL CHARACTERISTICS Rating Total Device Dissipation, FR−4 Board (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation, FR−4 Board (Note 2) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range PD RqJA March, 2006 − Rev. 8 xx M G G PD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ Minimum Pad 2. FR−4 @ 1.0 × 1.0 Inch Pad © Semiconductor Components Industries, LLC, 2006 MARKING DIAGRAM 1 xx = Specific Device Code xx = (Refer to page 2) M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: DTC114EET1/D DTC114EET1 Series ORDERING INFORMATION, DEVICE MARKING and RESISTOR VALUES Device Marking R1 (K) R2 (K) 8A 10 10 8B 22 22 8C 47 47 8D 10 47 DTC114EET1 DTC114EET1G DTC124EET1 DTC124EET1G DTC144EET1 DTC144EET1G DTC114YET1 DTC114YET1G DTC114TET1 DTC114TET1G 94 10 ∞ DTC143TET1 DTC143TET1G 8F 4.7 ∞ DTC123EET1 DTC123EET1G 8H 2.2 2.2 DTC143EET1 DTC143EET1G 8J 4.7 4.7 8K 4.7 47 8L 22 47 8M 2.2 47 8N 100 100 8P 47 22 DTC143ZET1 DTC143ZET1G DTC124XET1 DTC124XET1G DTC123JET1 DTC123JET1G DTC115EET1 DTC115EET1G DTC144WET1 DTC144WET1G Package Shipping † SC−75/SOT−416 3000 Tape & Reel SC−75/SOT−416 (Pb−Free) 3000 Tape & Reel SC−75/SOT−416 3000 Tape & Reel SC−75/SOT−416 (Pb−Free) 3000 Tape & Reel SC−75/SOT−416 3000 Tape & Reel SC−75/SOT−416 (Pb−Free) 3000 Tape & Reel SC−75/SOT−416 3000 Tape & Reel SC−75/SOT−416 (Pb−Free) 3000 Tape & Reel SC−75/SOT−416 3000 Tape & Reel SC−75/SOT−416 (Pb−Free) 3000 Tape & Reel SC−75/SOT−416 3000 Tape & Reel SC−75/SOT−416 (Pb−Free) 3000 Tape & Reel SC−75/SOT−416 3000 Tape & Reel SC−75/SOT−416 (Pb−Free) 3000 Tape & Reel SC−75/SOT−416 3000 Tape & Reel SC−75/SOT−416 (Pb−Free) 3000 Tape & Reel SC−75/SOT−416 3000 Tape & Reel SC−75/SOT−416 (Pb−Free) 3000 Tape & Reel SC−75/SOT−416 3000 Tape & Reel SC−75/SOT−416 (Pb−Free) 3000 Tape & Reel SC−75/SOT−416 3000 Tape & Reel SC−75/SOT−416 (Pb−Free) 3000 Tape & Reel SC−75/SOT−416 3000 Tape & Reel SC−75/SOT−416 (Pb−Free) 3000 Tape & Reel SC−75/SOT−416 3000 Tape & Reel SC−75/SOT−416 3000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 DTC114EET1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) IEBO − − − − − − − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.9 1.9 2.3 1.5 0.18 0.13 0.2 0.05 0.13 mAdc Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector−Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 35 60 80 80 160 160 8.0 15 80 80 80 80 80 60 100 140 140 350 350 15 30 200 150 140 150 140 − − − − − − − − − − − − − VCE(sat) − − 0.25 − − − − − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 4.9 − − Characteristic OFF CHARACTERISTICS DTC114EET1 DTC124EET1 DTC144EET1 DTC114YET1 DTC114TET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC115EET1 DTC144WET1 ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) DTC114EET1 DTC124EET1 DTC144EET1 DTC114YET1 DTC114TET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC115EET1 DTC144WET1 Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) DTC123EET1 (IC = 10 mA, IB = 1 mA) DTC143TET1/DTC114TET1/ DTC143EET1/DTC143ZET1/DTC124XET1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) VOL DTC114EET1 DTC124EET1 DTC114YET1 DTC114TET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC144EET1 DTC115EET1 DTC144WET1 VOH Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) DTC143TET1 DTC143ZET1 DTC114TET1 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 3 Vdc Vdc Vdc DTC114EET1 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Input Resistor TC114EET1 DTC124EET1 DTC144EET1 DTC114YET1 DTC114TET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC115EET1 DTC144WET1 Resistor Ratio DTC114EET1/DTC124EET1/DTC144EET1/ DTC115EET1 DTC114YET1 DTC143TET1/DTC114TET1 DTC123EET1/DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC144WET1D Symbol Min Typ Max Unit R1 7.0 15.4 32.9 7.0 7.0 3.3 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 2.9 6.1 6.1 28.6 2.86 130 61.1 kW 0.8 0.17 − 0.8 0.055 0.38 0.038 1.7 1.0 0.21 − 1.0 0.1 0.47 0.047 2.1 1.2 0.25 − 1.2 0.185 0.56 0.056 2.6 R1/R2 PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 50 RqJA = 600°C/W 0 −50 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE Figure 1. Derating Curve 1.0 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 Figure 2. Normalized Thermal Response http://onsemi.com 4 10 100 1000 DTC114EET1 Series 1 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − DTC114EET1 TA=−25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) VCE = 10 V TA=75°C 25°C −25°C 100 10 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 3. VCE(sat) versus IC Figure 4. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 25°C 75°C f = 1 MHz IE = 0 V TA = 25°C TA=−25°C 10 1 0.1 0.01 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 50 VO = 5 V 0 1 2 5 6 7 3 4 Vin, INPUT VOLTAGE (VOLTS) 10 VO = 0.2 V TA=−25°C 25°C 75°C 1 0.1 0 10 8 9 Figure 6. Output Current versus Input Voltage Figure 5. Output Capacitance V in , INPUT VOLTAGE (VOLTS) C ob, CAPACITANCE (pF) 4 3 100 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 7. Input Voltage versus Output Current http://onsemi.com 5 50 10 DTC114EET1 Series 100 1 IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − DTC123EET1 75°C 0.1 −25°C 25°C 0.01 0.001 30 10 20 40 IC, COLLECTOR CURRENT (mA) 0 TA = −25°C VCE = 10 V 1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 8. VCE(sat) versus IC 100 Figure 9. DC Current Gain 4.5 IC, COLLECTOR CURRENT (mA) 100 4 f = 1 MHz IE = 0 V TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 0 75°C 10 25°C 1 TA = −25°C 0.1 0.01 VO = 5 V 0.001 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0 Figure 10. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 75°C 1 25°C VO = 0.2 V 0.1 0 9 10 Figure 11. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 25°C 75°C 10 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 12. Input Voltage versus Output Current http://onsemi.com 6 50 DTC114EET1 Series 1000 1 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS TYPICAL ELECTRICAL CHARACTERISTICS − DTC124EET1 IC/IB = 10 25°C TA=−25°C 0.1 75°C 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) TA=75°C 25°C −25°C 100 10 50 VCE = 10 V 1 IC, COLLECTOR CURRENT (mA) Figure 13. VCE(sat) versus IC Figure 14. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 2 1 75°C 25°C TA=−25°C 10 1 0.1 0.01 VO = 5 V 0 0 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 15. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 10 25°C 75°C 1 0.1 0 10 8 10 Figure 16. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) 4 3 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 17. Input Voltage versus Output Current http://onsemi.com 7 50 DTC114EET1 Series 10 1000 IC/IB = 10 1 25°C TA=−25°C 0.01 0 25°C −25°C 10 50 20 40 IC, COLLECTOR CURRENT (mA) TA=75°C 100 75°C 0.1 VCE = 10 V hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS TYPICAL ELECTRICAL CHARACTERISTICS − DTC144EET1 1 10 IC, COLLECTOR CURRENT (mA) Figure 18. VCE(sat) versus IC 1 100 IC, COLLECTOR CURRENT (mA) 0.4 TA=−25°C 10 1 0.1 0.01 0.2 0 25°C 75°C 0.6 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 50 Figure 20. Output Capacitance VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 10 25°C 75°C 1 0.1 0 10 8 10 Figure 21. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) C ob , CAPACITANCE (pF) Figure 19. DC Current Gain f = 1 MHz IE = 0 V TA = 25°C 0.8 100 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 22. Input Voltage versus Output Current http://onsemi.com 8 50 DTC114EET1 Series 1 300 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − DTC114YET1 TA=−25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 25°C 200 −25°C 150 100 50 0 80 TA=75°C VCE = 10 250 1 2 4 6 Figure 23. VCE(sat) versus IC 100 f = 1 MHz lE = 0 V TA = 25°C 3 TA=75°C IC, COLLECTOR CURRENT (mA) 3.5 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 25°C −25°C 10 VO = 5 V 1 50 Figure 25. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 25°C 75°C 1 0.1 0 10 8 Figure 26. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 90 100 Figure 24. DC Current Gain 4 0 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 27. Input Voltage versus Output Current http://onsemi.com 9 50 10 DTC114EET1 Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM mP OR OTHER LOGIC Figure 28. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 29. Open Collector Inverter: Inverts the Input Signal Figure 30. Inexpensive, Unregulated Current Source http://onsemi.com 10 DTC114EET1 Series PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463−01 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −E− 2 3 b 3 PL 0.20 (0.008) e DIM A A1 b C D E e L HE −D− 1 M D HE C 0.20 (0.008) E INCHES NOM 0.031 0.002 0.008 0.006 0.063 0.031 0.04 BSC 0.004 0.006 0.061 0.063 MIN 0.027 0.000 0.006 0.004 0.059 0.027 MAX 0.035 0.004 0.012 0.010 0.067 0.035 0.008 0.065 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 11 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. DTC114EET1/D