DE275-501N16A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 16 A IDM Tc = 25°C, pulse width limited by TJM 96 A IAR Tc = 25°C 16 A EAR Tc = 25°C 20 mJ 5 V/ns dv/dt IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω >200 V/ns 590 W 284 W 3.0 W RthJC 0.25 C/W RthJHS 0.53 C/W PDC Tc = 25°C Derate 1.9W/°C above 25°C PDAMB Tc = 25°C Symbol Test Conditions min. typ. VDSS VGS = 0 V, ID = 3 ma 500 VGS(th) VDS = VGS, ID = 4 ma 3.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C RDS(on) VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% VDS = 20V, ID = 0.5 ID25 pulse test TL Weight 4.0 = 16 A RDS(on) = 0.4 Ω PDC = 590 W SG2 SD1 SD2 • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power 5.5 V ±100 nA 50 1 µA mA • • − − • • • cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Advantages Ω • Optimized for RF and high speed 8 S • Easy to mount—no insulators needed • High power density +175 °C switching at frequencies to 100MHz 3 5 175 -55 1.6mm(0.063 in) from case for 10 s ID25 Features V .38 TJM Tstg SG1 max. -55 TJ 500 V DRAIN Characteristic Values TJ = 25°C unless otherwise specified gfs = GATE IS = 0 PDHS VDSS °C +175 °C 300 °C 2 g DE275-501N16A RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. 0.3 Ω 1650 pF 122 pF 33 pF 21 pF 3 ns 2 ns 4 ns Toff 5 ns Qg 50 nC 12 nC 24 nC RG Ciss Coss VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz Crss Cstray Back Metal to any Pin Td(on) Ton Td(off) Qgs VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 Ω (External) VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 Qgd Source-Drain Diode Characteristic Values (TJ = 25°C unless otherwise specified) Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2% min. typ. Trr QRM IF = IS, -di/dt = 100A/µs, VR = 100V IRM max. 6 A 98 A 1.5 V 200 ns 0.6 µC 4 A For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical note on the IXYSRF web site at; http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 DE275-501N16A RF Power MOSFET Fig. 1 Fig. 2 Typical Transfer Characteristics V DS = 60V, PW = 4uS Typical Output Characteristics 60 60 ID , Drain Currnet (A) 50 40 Bottom 8-10V 7.5V 7V 6.5V 6V 5.5V 5V ID , Drain Current (A) Top 30 20 50 40 30 20 10 10 0 0 0 10 20 30 40 50 5 60 8 9 10 VD S vs. Capacitance 10000 Ciss 12 Capacitance (pF) Gate-to-Source Voltage (V) Fig. 4 Gate-to-Source Voltage vs. Gate Charge V DS = 250V, ID = 8A 14 7 VGS, Gate-to Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig. 3 6 10 8 6 4 1000 Coss 100 Crss 10 2 1 0 0 20 40 Gate Charge (nC) 60 80 0 200 400 VDS Voltage (V) 600 800 DE275-501N16A RF Power MOSFET Fig. 5 Package Drawing Source Source Gate Drain Source Source DE275-501N16A RF Power MOSFET 501N16A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 6. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. 10 DRAIN Ld 4 Lg Doff Roff D1crs Rd D2crs 20 GATE 6 8 1 5 Ron Don Dcos Rds 3 M3 2 7 Ls 30 SOURCE Figure 6 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the IXYS RF web site at http://www.ixysrf.com/products/switch_mode.html http://www.ixysrf.com/spice/de275-501n16a.html Net List: SYM=POWMOSN .SUBCKT 501N16A 10 20 30 * TERMINALS: D G S * 500 Volt 16 Amp .38 ohm N-Channel Power MOSFET * REVA 6-15-00 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 .2 DON 6 2 D1 ROF 5 7 .2 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 2.0N RD 4 1 .38 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .5N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=5.8) .MODEL D1 D (IS=.5F CJO=10P BV=100 M=.5 VJ=.7 TT=1N RS=10M) .MODEL D2 D (IS=.5F CJO=450P BV=500 M=.4 VJ=.6 TT=10N RS=10M) .MODEL D3 D (IS=.5F CJO=900P BV=500 M=.3 VJ=.3 TT=400N RS=10M) .ENDS Doc #9200-0222 Rev 5 © 2009 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: [email protected] Web: http://www.ixyscolorado.com