UMS CHA2066 10-16ghz low noise amplifier Datasheet

CHA2066
RoHS COMPLIANT
10-16GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
G1
Description
NC
G2
Vd
7272
The CHA2066 is a two-stage wide band
monolithic low noise amplifier.
The circuit is manufactured with a standard
pHEMT process: 0.25µm gate length, via
holes through the substrate, air bridges
and electron beam gate lithography.
RFout
RFin
UMS
It is supplied in chip form.
A
C
D
E
NC
Gain ( dB )
20
■ Broad band performance 10-16GHz
■ 2.0dB noise figure, 10-16GHz
■ 16dB gain, ± 0.5dB gain flatness
■ Low DC power consumption, 50mA
■ 20dBm 3rd order intercept point
■ Chip size: 1,52 x 1,08 x 0.1mm
5
18
16
4
14
12
3
10
8
2
6
4
1
2
0
0
7
8
9
10 11 12 13 14 15 16 17 18 19 20
Frequency ( GHz )
On wafer typical measurements.
Main Characteristics
Tamb = +25°C
Symbol
Parameter
NF
Noise figure, 10-16GHz
G
Gain
∆G
Min
14
Typ
Max
Unit
2.0
2.5
dB
16
± 0.5
Gain flatness
dB
± 1.0
dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA20660069 - 10 Mar 10
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Noise Figure ( dB )
Main Features
B
10-16GHz Low Noise Amplifier
CHA2066
Electrical Characteristics
Tamb = +25°C, Vd = +4V
Symbol
Fop
G
Parameter
Min
Operating frequency range
10
Gain (1)
14
Typ
Max
Unit
16
Ghz
16
dB
∆G
Gain flatness (1)
± 0.5
± 1.0
dB
NF
Noise figure (1)
2.0
2.5
dB
VSWRin
Input VSWR (1)
3.0:1
VSWRout
Ouput VSWR (1)
3.0:1
IP3
P1dB
Rth
Id
3rd order intercept point
20
dBm
Output power at 1dB gain compression
10
dBm
Thermal resistance
200
°C/W
Drain bias current (2)
45
mA
(1) These values are representative of on-wafer measurements that are made without bonding wires
at the RF ports. When the chip is attached with typical 0.3nH input and output bonding wires, the
indicated parameter values should be improved.
(2) This current is the typical value from the low noise low consumption biasing (B & D grounded).
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
Parameter (1)
Values
Unit
Vd
Drain bias voltage (3)
4.5
V
Pin
Maximum CW Input Power
-1
dBm
Pin
Maximum peak input power overdrive (2)
+15
dBm
Top
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Duration < 1s.
(3) For a typical biasing circuit: B & D grounded. See chip biasing option page 7/8.
Ref. : DSCHA20660069 - 10 Mar 10
2/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
10-16GHz Low Noise Amplifier
CHA2066
Typical Results
Chip Typical Response (On wafer Sij)
Tamb = +25°C
Vd = 4.0V; Vg1 = Vg2 = +1.4Volt ; Id = 45mA (A,B,C,D & E not connected)
Freq
MS11
PS11
MS12
PS12
MS21
PS21
MS22
PS22
GHz
dB
°
dB
°
dB
°
dB
°
1.00
-0.25
-16.1
-82.22
90.1
-46.86
-148.0
-0.07
-7.1
2.00
-0.54
-31.8
-83.38
37.9
-46.99
-169.6
-0.15
-14.8
3.00
-0.88
-48.8
-84.02
17.8
-30.57
-13.6
-0.67
-24.3
4.00
-1.38
-68.9
-72.90
21.7
-12.70
-58.0
-1.41
-26.7
5.00
-2.32
-95.1
-62.06
8.4
-1.44
-96.2
-1.47
-33.3
6.00
-4.51
-131.2
-52.22
-25.9
7.98
-145.4
-2.17
-41.3
7.00
-8.90
-177.3
-45.23
-71.4
13.83
154.7
-3.17
-46.2
8.00
-12.32
122.2
-41.37
-112.2
16.32
100.4
-4.01
-50.1
9.00
-10.70
61.8
-39.16
-144.4
17.19
56.4
-4.90
-53.3
10.00
-8.32
24.9
-37.57
-170.5
17.48
20.2
-5.99
-56.8
11.00
-7.00
-1.8
-36.41
168.3
17.54
-10.5
-7.27
-59.4
12.00
-6.48
-23.4
-35.43
149.3
17.55
-38.0
-8.87
-60.5
13.00
-6.63
-42.1
-34.71
131.5
17.53
-63.6
-10.85
-57.5
14.00
-7.33
-58.2
-34.27
114.2
17.44
-88.2
-12.73
-46.1
15.00
-8.51
-71.5
-34.16
98.4
17.23
-112.3
-13.16
-27.4
16.00
-9.93
-79.7
-34.42
83.4
16.85
-135.9
-11.71
-13.0
17.00
-11.00
-82.6
-35.18
70.8
16.29
-158.6
-9.84
-8.5
18.00
-11.11
-83.8
-36.29
61.5
15.59
179.4
-8.29
-9.4
19.00
-10.35
-88.5
-37.52
58.2
14.75
158.2
-7.17
-13.1
20.00
-9.53
-100.1
-38.26
59.5
13.82
137.2
-6.34
-18.1
21.00
-8.97
-117.1
-37.98
64.4
12.71
115.9
-5.86
-23.7
22.00
-9.04
-137.0
-36.56
64.7
11.36
95.5
-5.47
-29.3
23.00
-9.70
-161.0
-35.28
56.8
9.72
75.4
-5.35
-34.7
24.00
-10.97
174.2
-34.49
47.1
7.77
56.6
-5.37
-39.3
25.00
-12.61
144.5
-34.15
36.2
5.59
39.2
-5.41
-43.4
26.00
-14.42
110.6
-34.37
24.8
3.10
23.8
-5.70
-46.2
Ref. : DSCHA20660069 - 10 Mar 10
3/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
10-16GHz Low Noise Amplifier
CHA2066
Typical Results
Chip Typical Response (On wafer Sij)
Tamb = +25°C
Vd = 4.0V; Vg1 = Vg2 = +1.4Volt; Id = 45mA (A,B,C,D & E not connected)
20
Gain, RLoss ( dB )
15
10
5
Gain
dBS22
dBS11
0
-5
-10
-15
-20
2
4
6
8
10
12
14
16
18
20
22
24
26
Frequency ( GHz )
Gain, NF ( dB )
Typical Gain and Matching measurements on wafer
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
GAIN
10
11
12
13
14
NF
15
Spec.
16
17
18
19
20
Frequency ( GHz )
Typical Gain and Noise Figure measurements on wafer
Ref. : DSCHA20660069 - 10 Mar 10
4/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
10-16GHz Low Noise Amplifier
CHA2066
Typical Test-Jig Results
Circuit Typical Response (Test-Jig)
Gain & NF & RLoss ( dB )
Tamb = +25°C
Vd = 4.0V ; B & E Pads grounded ; Id = 65mA ( Vg1 & Vg2 NC )
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
dBS11
5
6
7
8
9
dBS21
10
11
dBS22
12
13
14
Spec.
15
16
17
Nf_C
18
19
20
Frequency ( GHz )
Typical Linear measurements in test-jig
20
18
16
14
12
10
8
6
4
2
0
-2
20
18
16
14
12
10
8
6
4
2
0
-2
Pout
Gain
-16 -14 -12 -10 -8 -6 -4
Pin ( dBm ) at 12GHz
-2
0
Pout
Gain
-16 -14 -12 -10 -8 -6 -4
Pin ( dBm ) at 16GHz
-2
Typical Output Power measurements in test-jig
Ref. : DSCHA20660069 - 10 Mar 10
5/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
0
10-16GHz Low Noise Amplifier
CHA2066
Chip schematic and Pad Identification
1520µm
G1
NC
G2
Vd
7272
2k
2k
20
35
1k
1k
1080µm
RFout
RFin
10
11
A
23 8
B
C
15
15
D
6
UMS
E
NC
Pad size 100x100µm, chip thickness 100µm
Dimensions : 1520 x 1080µm ± 35µm
1025
875
115
1010
410
410
225
455
605
755
905
35
Ref. : DSCHA20660069 - 10 Mar 10
1450
6/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
10-16GHz Low Noise Amplifier
CHA2066
Typical Chip Assembly
C = 100pF
Vd
IN
OUT
B
E
Chip Biasing options
This chip is self-biased, and flexibility is provided by the access to number of pads. the
internal DC electrical schematic is given in order to use these pads in a safe way.
G1
Vd
G2
35
20
2k
2k
11
1k
23
A
10
8
B
6
1k
15
E
C
15
D
The two requirements are:
N°1 : Not exceed Vds = 3.5Volt
( internal Drain to Source voltage ).
N°2 : Not biased in such a way that Vgs becomes pos itive.
( internal Gate to Source voltage )
We propose two standard biasing:
Low Noise and low consumption:
Vd = 4V and B & D grounded.
All the other pads non connected (NC).
Idd = 45mA & Pout-1dB = +10dBm Typical.
(Equivalent to A,B,C,D,E : NC and Vd=4V ; G1=+1.4V ; G2=+1.4V).
Low Noise and high output power:
Vd = 4V and B & E grounded.
All the other pads non connected (NC).
Idd = 65mA & Pout-1dB = +13dBm Typical.
(Equivalent to A,B,C,D,E : NC and Vd=5V ; G1=+1.4V ; G2=+4.0V).
A file is available on request to help the biasing option tuning.
Ref. : DSCHA20660069 - 10 Mar 10
7/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
10-16GHz Low Noise Amplifier
CHA2066
Ordering Information
Chip form
:
CHA2066-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. : DSCHA20660069 - 10 Mar 10
8/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
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