CHA2066 RoHS COMPLIANT 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave IC G1 Description NC G2 Vd 7272 The CHA2066 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. RFout RFin UMS It is supplied in chip form. A C D E NC Gain ( dB ) 20 ■ Broad band performance 10-16GHz ■ 2.0dB noise figure, 10-16GHz ■ 16dB gain, ± 0.5dB gain flatness ■ Low DC power consumption, 50mA ■ 20dBm 3rd order intercept point ■ Chip size: 1,52 x 1,08 x 0.1mm 5 18 16 4 14 12 3 10 8 2 6 4 1 2 0 0 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Frequency ( GHz ) On wafer typical measurements. Main Characteristics Tamb = +25°C Symbol Parameter NF Noise figure, 10-16GHz G Gain ∆G Min 14 Typ Max Unit 2.0 2.5 dB 16 ± 0.5 Gain flatness dB ± 1.0 dB ESD Protections : Electrostatic discharge sensitive device observe handling precautions ! Ref. : DSCHA20660069 - 10 Mar 10 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Noise Figure ( dB ) Main Features B 10-16GHz Low Noise Amplifier CHA2066 Electrical Characteristics Tamb = +25°C, Vd = +4V Symbol Fop G Parameter Min Operating frequency range 10 Gain (1) 14 Typ Max Unit 16 Ghz 16 dB ∆G Gain flatness (1) ± 0.5 ± 1.0 dB NF Noise figure (1) 2.0 2.5 dB VSWRin Input VSWR (1) 3.0:1 VSWRout Ouput VSWR (1) 3.0:1 IP3 P1dB Rth Id 3rd order intercept point 20 dBm Output power at 1dB gain compression 10 dBm Thermal resistance 200 °C/W Drain bias current (2) 45 mA (1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. When the chip is attached with typical 0.3nH input and output bonding wires, the indicated parameter values should be improved. (2) This current is the typical value from the low noise low consumption biasing (B & D grounded). Absolute Maximum Ratings (1) Tamb = +25°C Symbol Parameter (1) Values Unit Vd Drain bias voltage (3) 4.5 V Pin Maximum CW Input Power -1 dBm Pin Maximum peak input power overdrive (2) +15 dBm Top Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +125 °C (1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Duration < 1s. (3) For a typical biasing circuit: B & D grounded. See chip biasing option page 7/8. Ref. : DSCHA20660069 - 10 Mar 10 2/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 10-16GHz Low Noise Amplifier CHA2066 Typical Results Chip Typical Response (On wafer Sij) Tamb = +25°C Vd = 4.0V; Vg1 = Vg2 = +1.4Volt ; Id = 45mA (A,B,C,D & E not connected) Freq MS11 PS11 MS12 PS12 MS21 PS21 MS22 PS22 GHz dB ° dB ° dB ° dB ° 1.00 -0.25 -16.1 -82.22 90.1 -46.86 -148.0 -0.07 -7.1 2.00 -0.54 -31.8 -83.38 37.9 -46.99 -169.6 -0.15 -14.8 3.00 -0.88 -48.8 -84.02 17.8 -30.57 -13.6 -0.67 -24.3 4.00 -1.38 -68.9 -72.90 21.7 -12.70 -58.0 -1.41 -26.7 5.00 -2.32 -95.1 -62.06 8.4 -1.44 -96.2 -1.47 -33.3 6.00 -4.51 -131.2 -52.22 -25.9 7.98 -145.4 -2.17 -41.3 7.00 -8.90 -177.3 -45.23 -71.4 13.83 154.7 -3.17 -46.2 8.00 -12.32 122.2 -41.37 -112.2 16.32 100.4 -4.01 -50.1 9.00 -10.70 61.8 -39.16 -144.4 17.19 56.4 -4.90 -53.3 10.00 -8.32 24.9 -37.57 -170.5 17.48 20.2 -5.99 -56.8 11.00 -7.00 -1.8 -36.41 168.3 17.54 -10.5 -7.27 -59.4 12.00 -6.48 -23.4 -35.43 149.3 17.55 -38.0 -8.87 -60.5 13.00 -6.63 -42.1 -34.71 131.5 17.53 -63.6 -10.85 -57.5 14.00 -7.33 -58.2 -34.27 114.2 17.44 -88.2 -12.73 -46.1 15.00 -8.51 -71.5 -34.16 98.4 17.23 -112.3 -13.16 -27.4 16.00 -9.93 -79.7 -34.42 83.4 16.85 -135.9 -11.71 -13.0 17.00 -11.00 -82.6 -35.18 70.8 16.29 -158.6 -9.84 -8.5 18.00 -11.11 -83.8 -36.29 61.5 15.59 179.4 -8.29 -9.4 19.00 -10.35 -88.5 -37.52 58.2 14.75 158.2 -7.17 -13.1 20.00 -9.53 -100.1 -38.26 59.5 13.82 137.2 -6.34 -18.1 21.00 -8.97 -117.1 -37.98 64.4 12.71 115.9 -5.86 -23.7 22.00 -9.04 -137.0 -36.56 64.7 11.36 95.5 -5.47 -29.3 23.00 -9.70 -161.0 -35.28 56.8 9.72 75.4 -5.35 -34.7 24.00 -10.97 174.2 -34.49 47.1 7.77 56.6 -5.37 -39.3 25.00 -12.61 144.5 -34.15 36.2 5.59 39.2 -5.41 -43.4 26.00 -14.42 110.6 -34.37 24.8 3.10 23.8 -5.70 -46.2 Ref. : DSCHA20660069 - 10 Mar 10 3/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 10-16GHz Low Noise Amplifier CHA2066 Typical Results Chip Typical Response (On wafer Sij) Tamb = +25°C Vd = 4.0V; Vg1 = Vg2 = +1.4Volt; Id = 45mA (A,B,C,D & E not connected) 20 Gain, RLoss ( dB ) 15 10 5 Gain dBS22 dBS11 0 -5 -10 -15 -20 2 4 6 8 10 12 14 16 18 20 22 24 26 Frequency ( GHz ) Gain, NF ( dB ) Typical Gain and Matching measurements on wafer 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 GAIN 10 11 12 13 14 NF 15 Spec. 16 17 18 19 20 Frequency ( GHz ) Typical Gain and Noise Figure measurements on wafer Ref. : DSCHA20660069 - 10 Mar 10 4/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 10-16GHz Low Noise Amplifier CHA2066 Typical Test-Jig Results Circuit Typical Response (Test-Jig) Gain & NF & RLoss ( dB ) Tamb = +25°C Vd = 4.0V ; B & E Pads grounded ; Id = 65mA ( Vg1 & Vg2 NC ) 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 dBS11 5 6 7 8 9 dBS21 10 11 dBS22 12 13 14 Spec. 15 16 17 Nf_C 18 19 20 Frequency ( GHz ) Typical Linear measurements in test-jig 20 18 16 14 12 10 8 6 4 2 0 -2 20 18 16 14 12 10 8 6 4 2 0 -2 Pout Gain -16 -14 -12 -10 -8 -6 -4 Pin ( dBm ) at 12GHz -2 0 Pout Gain -16 -14 -12 -10 -8 -6 -4 Pin ( dBm ) at 16GHz -2 Typical Output Power measurements in test-jig Ref. : DSCHA20660069 - 10 Mar 10 5/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 0 10-16GHz Low Noise Amplifier CHA2066 Chip schematic and Pad Identification 1520µm G1 NC G2 Vd 7272 2k 2k 20 35 1k 1k 1080µm RFout RFin 10 11 A 23 8 B C 15 15 D 6 UMS E NC Pad size 100x100µm, chip thickness 100µm Dimensions : 1520 x 1080µm ± 35µm 1025 875 115 1010 410 410 225 455 605 755 905 35 Ref. : DSCHA20660069 - 10 Mar 10 1450 6/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 10-16GHz Low Noise Amplifier CHA2066 Typical Chip Assembly C = 100pF Vd IN OUT B E Chip Biasing options This chip is self-biased, and flexibility is provided by the access to number of pads. the internal DC electrical schematic is given in order to use these pads in a safe way. G1 Vd G2 35 20 2k 2k 11 1k 23 A 10 8 B 6 1k 15 E C 15 D The two requirements are: N°1 : Not exceed Vds = 3.5Volt ( internal Drain to Source voltage ). N°2 : Not biased in such a way that Vgs becomes pos itive. ( internal Gate to Source voltage ) We propose two standard biasing: Low Noise and low consumption: Vd = 4V and B & D grounded. All the other pads non connected (NC). Idd = 45mA & Pout-1dB = +10dBm Typical. (Equivalent to A,B,C,D,E : NC and Vd=4V ; G1=+1.4V ; G2=+1.4V). Low Noise and high output power: Vd = 4V and B & E grounded. All the other pads non connected (NC). Idd = 65mA & Pout-1dB = +13dBm Typical. (Equivalent to A,B,C,D,E : NC and Vd=5V ; G1=+1.4V ; G2=+4.0V). A file is available on request to help the biasing option tuning. Ref. : DSCHA20660069 - 10 Mar 10 7/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 10-16GHz Low Noise Amplifier CHA2066 Ordering Information Chip form : CHA2066-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA20660069 - 10 Mar 10 8/8 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice