AUIRLR2905 AUIRLU2905 AUTOMOTIVE GRADE Features Advanced Planar Technology Logic Level Gate Drive Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET VDSS Package Type AUIRLU2905 I-Pak AUIRLR2905 D-Pak max. RDS(on) 27m 42A ID D D Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base part number 55V G S G D-Pak AUIRLR2905 G Gate I-Pak AUIRLU2905 D Drain Standard Pack Form Quantity Tube 75 Tube 75 Tape and Reel Left 3000 S D S Source Orderable Part Number AUIRLU2905 AUIRLR2905 AUIRLR2905TRL Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 42 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 30 A IDM PD @TC = 25°C Pulsed Drain Current Maximum Power Dissipation 160 110 W VGS EAS EAS (tested) IAR EAR dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy (tested Value) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol RJC RJA RJA Parameter Junction-to-Case Junction-to-Ambient ( PCB Mount) Junction-to-Ambient Max. Units 0.71 ± 16 210 200 25 11 5.0 -55 to + 175 W/°C V mJ A mJ V/ns °C 300 Typ. Max. Units ––– ––– ––– 1.4 50 110 °C/W HEXFET® is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-12-11 AUIRLR/U2905 Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 55 ––– ––– V VGS = 0V, ID = 250µA ––– 0.070 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.027 VGS = 10V, ID = 25A ––– ––– 0.030 VGS = 5.0V, ID = 25A ––– ––– 0.040 VGS = 4.0V, ID = 21A 1.0 ––– 2.0 V VDS = VGS, ID = 250µA 21 ––– ––– S VDS = 25V, ID = 25A ––– ––– 25 VDS = 55V, VGS = 0V µA ––– ––– 250 VDS = 44V,VGS = 0V,TJ =150°C ––– ––– 100 VGS = 16V nA ––– ––– -100 VGS = - 16V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 11 84 26 15 48 8.6 25 ––– ––– ––– ––– LD Internal Drain Inductance ––– 4.5 ––– LS Internal Source Inductance ––– 7.5 ––– ––– ––– ––– 1700 400 150 ––– ––– ––– Min. Typ. Max. Units ––– ––– 42 ––– ––– 160 ––– ––– ––– ––– 80 210 1.3 120 320 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time ID = 25A nC VDS = 44V VGS = 5.0V VDD = 28V ID = 25A ns RG = 3.4VGS = 5.0V RD = 1.1 Between lead, 6mm (0.25in.) nH from package and center of die contact VGS = 0V pF VDS = 25V ƒ = 1.0MHz, See Fig. 5 Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25°C,IS = 25A, VGS = 0V ns TJ = 25°C ,IF = 25A nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) VDD = 25V,Starting TJ = 25°C, L = 470µH, RG = 25, IAS = 25A (See fig. 12) ISD 25A, di/dt 270A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 300µs; duty cycle 2%. When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at Tj approximately 90°C. 2 2015-12-11 AUIRLR/U2905 1000 1000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 100 10 2.5V 20µs PULSE WIDTH T J = 25°C 1 0.1 1 10 100 10 A 100 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25°C 100 TJ = 175°C 10 V DS= 25V 20µs PULSE WIDTH 4.0 5.0 6.0 7.0 8.0 9.0 VGS , Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 1 10 A 100 Fig. 2 Typical Output Characteristics 1000 3.0 20µs PULSE WIDTH T J = 175°C VDS , Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics 1 2.5V 1 0.1 VDS , Drain-to-Source Voltage (V) 2.0 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP ID , Drain-to-Source Current (A) ID , Drain-to-Source Current (A) TOP I D = 41A 2.5 2.0 1.5 1.0 0.5 VGS = 10V 0.0 A -60 -40 -20 0 20 40 60 A 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig. 4 Normalized On-Resistance Vs. Temperature 2015-12-11 AUIRLR/U2905 2400 C, Capacitance (pF) Ciss 15 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = Cds + C gd VGS , Gate-to-Source Voltage (V) 2800 2000 1600 Coss 1200 800 Crss 400 0 1 10 100 I D = 25A V DS = 44V V DS = 28V 12 9 6 3 FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 20 30 40 50 60 70 A Q G , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) I D , Drain Current (A) ISD , Reverse Drain Current (A) 10 100 TJ = 175°C 100 10µs 100µs 10 1ms TJ = 25°C VGS = 0V 10 0.4 4 0.8 1.2 1.6 2.0 A 2.4 TC = 25°C TJ = 175°C Single Pulse 1 1 10ms A 10 100 VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 2015-12-11 AUIRLR/U2905 50 LIMITED BY PACKAGE ID , Drain Current (A) 40 30 20 Fig 10a. Switching Time Test Circuit 10 0 25 50 75 100 125 TC , Case Temperature 150 175 ( °C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms Thermal Response (Z thJC) 10 1 D = 0.50 0.20 0.10 0.1 0.01 0.00001 PDM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2015-12-11 AUIRLR/U2905 DRIVER L VDS D.U.T RG + V - DD IAS 20V 0.01 tp Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) 500 15V TOP BOTTOM 400 ID 10A 17A 25A 300 200 100 0 VDD = 25V 25 50 75 100 125 150 A 175 Starting TJ , Junction Temperature (°C) V(BR)DSS tp Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 13a. Gate Charge Waveform 6 Fig 13b. Gate Charge Test Circuit 2015-12-11 AUIRLR/U2905 Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 7 2015-12-11 AUIRLR/U2905 D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches)) D-Pak (TO-252AA) Part Marking Information Part Number AULR2905 YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2015-12-11 AUIRLR/U2905 I-Pak (TO-251AA) Package Outline (Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information Part Number AULU2905 YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-12-11 AUIRLR/U2905 D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 2015-12-11 AUIRLR/U2905 Qualification Information Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-Pak MSL1 I-Pak Class M4 (+/- 425V)† AEC-Q101-002 Class H1B (+/- 1000V) † AEC-Q101-001 Class C5 (+/- 1125V)† AEC-Q101-005 Yes † Highest passing voltage. Revision History Date 12/11/2015 Comments Updated datasheet with corporate template Corrected ordering table on page 1. Added package outline and part marking on page 9 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 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Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 11 2015-12-11