AH314 2.3-2.9 GHz 2W 5V Linear Driver Amplifier Applications • • WCDMA / WiMAX / WiBro / WiFi / LTE Wireless infrastructure 24-pin 5x5mm leadless QFN SMT package Product Features • • • • • • • • Functional Block Diagram 2.3 – 2.9 GHz 23 dB Gain EVM <2.5 %@ 25 dBm Pout <0.2 dB Gain Flatness Across 200 MHz BW +33dBm P1dB Internal Active Bias +5V Single Supply Voltage Lead-free/RoHS-compliant 5x5 mm QFN Package General Description Pin Configuration The AH314 is a high dynamic range broadband driver amplifier in a surface mount package. The two-stage amplifier has 23 dB of gain, while achieving +25 dBm of linear output power for 2.3–2.9 GHz applications. Pin No. Function 1 2 3, 6, 7, 8, 9, 10, 14, 20 4, 5 11, 12, 13 15 16 17 19 Backside paddle Iref1 Vbias1 GND/NC RFin RFout Vcc2 Iref2 Vbias2 Vcc1 GND AH314 uses a high reliability +5V InGaP/GaAs HBT process technology. The device incorporates proprietary bias circuitry to compensate for variations in linearity and current draw over temperature. An internal active bias allows the AH314 to operate directly off a commonly available +5V supply. The RoHS-compliant/lead-free 5x5mm QFN package is surface mountable to allow for low manufacturing costs to the end user. The AH314 is also package and pin compatible with the 3.3-3.8 GHz AH315 and the 0.7-2.7 GHz AH323. The AH314 is targeted for use in a configuration for the driver stage amplifier in next generation base stations where high linearity and medium power is required. Ordering Information Part No. AH314-G AH314-PCB Description 2.3-2.9 GHz 2W 5V Linear Driver Amplifier 2.5-2.7 GHz Evaluation Board Standard T/R size = 1000 pieces on a 7” reel. Data Sheet: Rev A 08/27/10 © 2010 TriQuint Semiconductor, Inc. - 1 of 9 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH314 2.3-2.9 GHz 2W 5V Linear Driver Amplifier Specifications Recommended Operating Conditions Absolute Maximum Ratings Parameter Rating Parameter Min Typ Storage Temperature RF Input Power, CW, 50Ω,T = 25ºC Device Voltage, Vcc, Vbias Collector Current, Icc (Icc1 + Icc2) Iref 1 Iref 2 Device Power Thermal Resistance RTH -55 to +125 o C +19 dBm +8 V 1600 mA 100 mA 50 mA 8W 14.4 o C/W Vcc Icc TJ (for >106 hours MTTF) Operating Temp. Range +4.75 +5 600 Max Units +6 +200 +85 -40 V mA o C o C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 2.6 GHz, in tuned application circuit. Parameter Operational Frequency Range Test Frequency Power Gain Input Return Loss Output Return Loss EVM @ 24 dBm Efficiency @ 24 dBm Output P1dB OIP3 (@ 18 dBm/Tone, , ∆f = 1 MHz) Noise Figure Device Voltage, Vcc Iref 1 Iref 2 Quiescent Current, Icq Conditions Min Typical 2.3 20.5 See Note 1. See Note 2. 550 2.6 23 8.2 16.7 2.0 6.6 +33 +42 6.4 +5 24 10 600 Max Units 2.9 GHz GHz dB dB dB % % dBm dBm dB V mA mA mA 2.5 650 Notes: 1. Using an 802.16-2004 OFDMA, 64QAM-1/2, 1024-FFT, 20 symbols, 30 subchannels. 2. This corresponds to the quiescent current or operating current under small-signal conditions with bias resistor R1=68Ω off pin 1 and R2=150Ω off pin 16. Data Sheet: Rev A 08/27/10 © 2010 TriQuint Semiconductor, Inc. - 2 of 9 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH314 2.3-2.9 GHz 2W 5V Linear Driver Amplifier Device Characterization Data VCC = +5 V, ICQ = 600 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads Output Smith Chart Input Smith Chart Gain vs. Frequency 1 30 0.8 Gain (dB) 25 0.6 4 GHz 0.4 20 0.2 15 0 GHz -1 -0.75-0.5-0.25 0.75 1 -0.2 0 0.25 0.50.05 10 4 GHz 5 -0.4 -0.6 0 0.05 GHz -0.8 0 1 2 3 4 5 6 -1 Frequency (GHz) Notes: The gain for the unmatched device in 50ohm system is shown as the trace in blue color. The impedance plots are shown from 0.5 – 4 GHz with markers placed at 0.05 GHz and 4 GHz. S-Parameter Data VCC = +5 V, ICQ = 600 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (angle) S22 (dB) S22 (ang) 2200 2250 2300 2350 2400 2450 2500 2550 2600 2650 2700 2750 2800 2850 2900 2950 3000 -6.45 -6.78 -7.13 -7.45 -7.81 -8.23 -8.68 -9.18 -9.69 -10.16 -10.53 -10.73 -10.68 -10.36 -9.90 -9.64 -10.22 -120.54 -130.36 -138.36 -144.94 -150.37 -154.71 -158.06 -160.55 -161.94 -162.13 -161.30 -159.84 -158.59 -158.56 -161.62 -169.83 175.73 23.31 23.13 22.99 22.95 22.95 23.00 23.09 23.28 23.51 23.78 24.11 24.53 25.03 25.69 26.43 27.14 27.49 -145.39 -158.46 -170.95 177.21 165.61 154.08 142.57 131.04 119.35 107.23 94.68 81.54 67.41 52.45 35.26 14.38 -10.77 -48.04 -47.97 -48.01 -48.10 -48.27 -48.56 -48.96 -49.41 -49.99 -50.72 -51.59 -52.51 -53.25 -53.15 -51.90 -49.90 -48.05 60.39 52.65 45.37 38.67 31.91 24.85 17.33 8.81 -0.931 -12.17 -26.06 -43.81 -67.29 -96.50 -128.68 -160.49 168.76 -2.33 -2.65 -2.98 -3.31 -3.65 -4.01 -4.39 -4.78 -5.19 -5.65 -6.17 -6.8 -7.77 -9.09 -11.10 -12.82 -9.75 157.17 156.54 156.14 155.90 155.85 155.98 156.31 156.65 157.10 157.78 158.54 159.55 161.17 164.03 172.59 -160.65 -129.23 Data Sheet: Rev A 08/27/10 © 2010 TriQuint Semiconductor, Inc. - 3 of 9 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH314 2.3-2.9 GHz 2W 5V Linear Driver Amplifier 2.5 – 2.7 GHz Application Circuit (AH314-PCB) Notes: 1. 2. 3. 4. C12 to be placed as close as possible to the device C11 = 47 pF is critical. Do Not Replace with any other value. Place C19 between marking 3 and 4. See PC Board Layout on page 8 for more details. Bill of Material Ref Des U1 C1, C2, C4, C11, 15, C16, C17, C18 C5, C6, C7 Value 47 pF 1000 pF Description Manufacturer 2W Driver Amplifier TriQuint Cap, Chip, 0805, 2%, 50V various Cap, Chip, 0603, 5%, 50V, NPO-COG various C8 4.7 uF Cap, Chip, 6032, 20%, 35V, TANT various C12 0.1 uF Cap, Chip, 0805, 5%, 25V, X7R various C19 1.9 pF Cap, Chip, 0603, ± 0.05 pF, 50VAccu-P L1 18 nH R1 R2 Part Number AH314-PCB AVX 06035J1R3ABTTR Ind, Chip, 0603, 5%, mulilayer TOKO LL1608-FSL18NJ 68 Ω Res, Chip, 0603, 5%, 1/16W various 150 Ω Res, Chip, 0603, 5%, 1/16W various R3, R4, R5 0Ω Res, Chip, 0805, 1/10W various R6 0Ω Res, Chip, 0603, 5%, 1/16W various Data Sheet: Rev A 08/27/10 © 2010 TriQuint Semiconductor, Inc. - 4 of 9 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH314 2.3-2.9 GHz 2W 5V Linear Driver Amplifier Typical Performance 2.5 – 2.7 GHz (AH314-PCB) Test conditions unless otherwise noted: Vpd, Vbias, Vcc = 5V, ICQ = 600 mA, +25 °C Frequency GHz 2.5 2.6 2.7 Gain Input Return Loss Output Return Loss Noise Figure Output P1dB EVM @ 24 dBm (1) OIP3 @ 18 dBm/Tone, ∆f = 1 MHz dB dB dB dB dBm % dBm 22.5 7 15 23 8.2 16.7 6.4 +33 2 +42 22.5 10 12 +41 2.5 +40 Note: 1. Using an 802.16-2004 OFDMA, 64QAM-1/2, 1024-FFT, 20 symbols, 30 subchannels. Return Loss vs. Frequency Gain vs. Pout vs. Temperature 0 26 24 -5 25 23 22 Freq = 2.6 GHz +85 C +25 C - 40 C 24 -10 S11 S22 Gain (dB) S11, S22 (dB) Gain (dB) Gain vs. Frequency 25 -15 23 22 21 -20 21 20 -25 20 QFDM, QAM-64, 54 Bb/S 2.4 2.5 2.6 2.7 Frequency (GHz) 2.8 2.4 2.9 2.5 EVM vs. Pout vs. Frequency 2.8 2.9 20 EVM vs Pout vs Frequency 5 Vcc = 5 V 2.5 GHz 2.6 GHz 2.7 GHz EVM (%) EVM (%) 2 QFDM, QAM-64, 54 Bb/S 18 20 22 Pout (dBm) 24 0 26 19 21 23 Pout (dBm) OIP3 vs. Frequency 25 3 +85 C +25 C - 40 C 2 27 16 18 20 22 Pout (dBm) 24 26 OIP3 vs. Output Power/tone 2.5GHz, 1MHz tone spacing 46 44 44 OIP3 (dBm) OIP3 (dBm) EVM vs Pout vs Temperature 0 17 1MHz tone spacing, +18 dBm/tone 46 34 QFDM, QAM-64, 54 Bp/S 0 16 32 1 1 1 26 28 30 Output Power (dBm) 4 3 2 24 Freq = 2.6 GHz 2.5 GHz 2.6 GHz 2.7 GHz Vcc = 6 V 4 3 22 5 5 4 EVM (%) 2.6 2.7 Frequency (GHz) 42 40 38 42 40 38 36 36 2.3 2.4 2.5 Frequency (GHz) Data Sheet: Rev A 08/27/10 © 2010 TriQuint Semiconductor, Inc. 2.6 2.7 - 5 of 9 - 16 18 20 22 Output Power / Tone (dBm) 24 26 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH314 2.3-2.9 GHz 2W 5V Linear Driver Amplifier 2.3 – 2.7 GHz Applications Note: Changing Icq Biasing Configurations at +5V The AH314 can be configured to operate with lower bias current by varying the bias-adjust resistors R1 & R2. R1 sets the quiescent current in the output stage, while R2 sets the quiescent current in the input stage. The recommended circuit configurations shown previously in this datasheet have the device operating with a 600 mA as the quiescent current (ICQ). This biasing level represents a tradeoff in terms of EVM and efficiency. Lowering ICQ will improve upon the efficiency of the device, but degrade the EVM performance. Raising ICQ will improve the EVM performance, but degrade the efficiency of the device. Measured data shown in the plots below represents the AH314 measured and configured for 2.6 GHz applications. It is expected that variation of the bias current for other frequency applications will produce similar performance results. R2 Icq Vbias (ohms) (mA) (V) 150 600 +5 180 500 +5 300 400 +5 330 300 +5 EVM vs Pout vs Icq F = 2.6GHz, 802.16-2004 OFDMA, 64QAM-1/2, 1024 FFT, 20 symbols, 30 channels 7 6 5 EVM (%) R1 (ohms) 68 86 110 160 4 3 300 mA 400 mA 500 mA 600 mA 2 1 0 20 21 22 23 24 25 26 27 Pout (dBm) 2.3 – 2.7 GHz Applications Note: Changing Icq Biasing Configurations at +3.3V EVM vs. Pout vs. Icq R2 Icq Vbias (ohms) (mA) (V) 3 500 +3.3 15 400 +3.3 24 350 +3.3 45 250 +3.3 7 6 5 EVM (%) R1 (ohms) 3 11 17 43 4 3 500 mA 400 mA 350 mA 250 mA 2 1 0 20 21 22 23 24 25 Pout (dBm) Data Sheet: Rev A 08/27/10 © 2010 TriQuint Semiconductor, Inc. - 6 of 9 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH314 2.3-2.9 GHz 2W 5V Linear Driver Amplifier Pin Description Pin Symbol 1 Iref 1 2 4, 5 3, 6, 7, 8, 9, 10, 14, 18, 20 11, 12, 13 15 Vbias1 RFin RFout Vcc2 16 Iref 2 17 19 Backside Paddle Vbias2 Vcc1 GND GND/NC Description Reference current into internal active bias current mirror. Current into Iref sets device quiescent current. Also, can be used as on/off control. (for amp 1) Voltage supply for active bias for amp 1. Connect to same supply voltage as Vcc1. RF Input No internal connection. This pin can be grounded or N/C on PCB. Land pads should be provided for PCB mounting integrity. RF Output Supply Voltage for Amp2 Reference current into internal active bias current mirror. Current into Iref sets device quiescent current. Also, can be used as on/off control. (for amp 2) Voltage supply for active bias for amp 2. Connect to same supply voltage as Vcc2. Supply Voltage for Amp1 RF/DC ground. Ensure good solder attach for best thermal and electrical performance. Applications Information PC Board Layout PCB Material: 0.0147” Rogers Ultralam 2000, single layer, 1 oz Cu, εr = 2.45 Microstrip line details: width = .042”, spacing = .050”. The silkscreen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as place markers for critical tuning components The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. For further technical information, Refer to http://www.triquint.com/prodserv/more_info/default.aspx?prod_id=AH314 Data Sheet: Rev A 08/27/10 © 2010 TriQuint Semiconductor, Inc. - 7 of 9 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH314 2.3-2.9 GHz 2W 5V Linear Driver Amplifier Mechanical Information Package Information and Dimensions Lead-free/Green/RoHS-compliant. Package pin plating - NiPdAu. Compatible with lead-free (Tmax=260°C) and lead (Tmax=245 °C) soldering processes. The AH314-G will be marked with an “AH314G” designator on the top surface of the package. An alphanumeric lot code (“XXXX”) is also marked below the part designator. Mounting Configuration Notes: 1. 2. 3. 4. 5. 6. 7. 8. All dimensions are in millimeters (inches). Angles are in degrees Ground/Thermal vias are critical for the proper performance of this device. Vias should be .35mm (#80/.135”) diameter drill and have a final plated thru diameter of .25mm (.010”). Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. To ensure reliable operation, device ground paddleto-ground pad solder joint is critical Add mounting screws near the part to fasten board to a heat sink. Ensure that the ground/thermal via region contacts the heat sink Do not put solder mask on the backside of the PC Board in the region where the board contacts the heat sink. RF trace width depends upon the PC board construction and material Use 1oz copper minimum Data Sheet: Rev A 08/27/10 © 2010 TriQuint Semiconductor, Inc. - 8 of 9 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® AH314 2.3-2.9 GHz 2W 5V Linear Driver Amplifier Product Compliance Information Solderability ESD Information Compatible with the latest version of J-STD-020, Lead free solder, 260° ESD Rating: Value: Test: Standard: Class 1B Passes between 500 and 1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes between 1000V and 2000V Charged Device Model (CDM) JEDEC Standard JESD22-A114 This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: • Lead Free • Halogen Free (Chlorine, Bromine) • Antimony Free • TBBP-A (C15H12Br402) Free • PFOS Free • SVHC Free MSL Rating Level 2 at +260 °C convection reflow JEDEC standard J-STD-020. Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: [email protected] Tel: Fax: +1.503.615.9000 +1.503.615.8902 For technical questions and application information: Email: [email protected] Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Data Sheet: Rev A 08/27/10 © 2010 TriQuint Semiconductor, Inc. - 9 of 9 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network®